MOSFET

201532

1

MOSFET DMOSUMOS

MOSDMOSFETDMOSUMOSFET

V/dt

SOASafe Operating Area /MOS

MOSFETBaligas FOM for unipolar device

2007928

2

IdA

PC DC-DC

Li DC-DC

ABS

PPCFAX TVCCFL

PDP

VV

MOSFET

NEC 3

MOSFET

1/51/10

MOSFET

MOSFET

4

DMOSFET

N-

N+ N+

N+

P P

5

UMOSFET

N-

N+

N+ N+

P P

6

DSI

DSV

3GV

2GV

4GV

1GV

ONR

DSBV

DSI

MOSFET

DSVGS

DSm

V

Ig

23 GGGS VVV

gm

7

MOSFET

PN

VVK 7.0

3GV2GV1GV

GVDSI

DSV

MOSFET 5V [ ( Ron ]

8

MOSFET

NP

P

N+P

N+P

DMOS NP

UMOS

9

MOSFET

NX

PX

SNX

SPX

DN

x

P NP XX

N P

P

10

P

B B. Jayant Baliga

1m

11

DMOSFET

N-

N+ N+

N+

N-

N+

N+

N+

12

DMOS

B B. Jayant Baliga

ND

13

UMOSFET

N-

N+

N+ N+

P P

P/N

P Ron

14

MOS

Mq

VE

0q

Bq

Bq

q

M

FE

CE

iE

S

FE

ox

MSFBC

QV 0

iE

VE

CEM

FE

S

FE

0V

15

MOS

0V

M

FE

VE

CE

iE

S

FE

VE

CE

iE

S

FE

Sq

M

FE

0V

16

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

-0.4 -0.2 0 0.2 0.4 0.6 0.8 1

SV)

Q

SC

/cm

2

B2

PSi NA=11016cm-3

17

0.1

1.0

10.0

1.E+13 1.E+14 1.E+15 1.E+16 1.E+17

cm-3

m

BS 2

i

A

A

sB

A

sm

n

N

Nq

kT

qNW ln

42

22

18

-2

0

2

4

6

8

10

1.E+02 1.E+03 1.E+04

tox

VT

V)

NA=1e14

NA=1e15

NA=1e16

NA=1e17

NA=1e18

ox

SBFBT

C

QVV 2

N+SiQ0=31010cm-2

cm-3

19

MOSFET

TGSoxnsCH

DSTGSoxnsDSDSTGSoxnsDS

V

TGSoxns

L

DS

DS

VVCZ

LR

VVVL

ZCVVVV

L

ZCI

dVVVVCZdyI

dRIdV

DS

2

00

2

1

N+ N+

y dy

LP

)()()(

yVVVCyQ

yQZ

dydR

TGSoxn

nns

DSV

20

MOSFET

N+ N+

P

L

TGSoxnsGS

DSms

DSD

A

sTGS

oxnsDS

TGSDSTGSoxns

DS

VVL

ZC

dV

dIg

VVqN

LVVLL

ZCI

VVVVVL

ZCI

2 ,

2

,2

2

2

21

qncQ

QcR

qn

b

aR

b

a

cbc

a

bc

a

qnGR

GVVa

bcqnbc

a

VqnbcEqnbcqnvI

B

s

B

s

B

BBB

'

'

1

:1

, 1

11

V

a

c

b

I

a

VE

Ev B

22

DMOSFET

N+CSR

NR CH

R AR

CDR

SBR

DR

JR

P

N

N

CDSBDJACHNCSONRRRRRRRRR 23

DMOS

N+

N+

JFET

m 2GL

PX

t

x

NL

0W

dxN

a

y

24

DMOS

: ,: ,, SBSBSBSBSPSB ttR

N: ,22

1, SNGNSNSPN

RmLLRR

SB

1 1

S

R

RS

S

R

:

1

:

25

DMOS

JFET

TGoxnsGCH

SPCHVVC

mLLR

2

2,

6.0 ,2

22,

K

VVC

mLXLKR

TGoxns

GPGSPA

: ,

22

2

0

0, D

PG

GPDSPJ

WXL

mLWXR

26

DMOS

a

tamLR

a

ta

Zdx

ZxaR

GDSPD

Dt

DD

ln2

2

ln

,

0

0

0

,22

2ln

2

2WXmt

WXL

mLmLR PD

PG

GGDSPD

27

DMOS

: ,, CCSPDCR

: ,, CSCCS

CellSPSC A

A

AR

p ,1063.1

n ,1093.5

5.28

,

5.29

,

PP

Ap

DSPON

PP

Dn

DSPON

BVNq

WR

BVNq

WR

28

DMOS

0

2

4

6

8

10

12

0 5 10 15 20 25

Poly-Si m

m

cm

2

Rch,sp

RA,sp

RJ,sp

RD,sp

Rtotal

Poly-Si 16m BV50V

Ron

2

, cm m 1.0idealonR

29

0

20

40

60

80

100

120

140

0 10 20 30 40 50 60

Poly-Si m

m

cm

2

Rch,sp

RA,sp

RJ,sp

RD,sp

Rtotal

DMOS

BV500V Poly-Si 16m

2

, cm m 33idealonR

30

DMOS3

0

2

4

6

8

10

12

0 5 10 15 20 25

Poly-Si m

m

cm

2

Rch,sp

RA,sp

RJ,sp

RD,sp

Rtotal

Poly-Si 8m BV50V

2

, cm m 1.0idealonR

RonP 31

UMOSFET

N+

P

N+

x

y

NL

CHL

t

2mW 2tW

32

UMOSFET

N+

TGoxns

tmCHSPCH

VVC

WWLR

2,

2ln

2,

mD

t

tmtmDSPD

Wt

W

WWWWR

m

tm

NNSPN W

WWtR

,

33

UMOS

N+

SBSBSPSB tR ,

m

tmCSPSC

W

WWR ,

CSPDCR ,

34

UMOS

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.0 1.0 2.0 3.0 4.0

UMOS m

m

cm

2

Rch,sp

RD,sp

Rsb,sp

Rtotal

BV50V 2

, cm m 1.0idealonR

UMOS 35

IN

mm

C

gf

2

: ,2

1G

GIN

in RRC

f

GININ VfCi 2 GmOUT Vgi

SiGR

36

DMOS

GDCNC PC

OC

gt

ot

P

N+

N

MGSIN

GDLmM

CCC

CRgC

1

OPNGSCCCC

37

DMOS

N+

N+

P

P

LP

JFETRon

P 38

GI

iL

sL

D

SV

GR

S

G

GSC

GDC

MOSFET

GSV

LI0

GAV

0

GAV

GV

GV

39

MOSFET

VG=0, IDS=0, VDS=VS t=0 (VGA)

TVt

GAV

GPV

t

t

LI

SV

1t 2t 3t

FV

DSI

GSV

DSV

GS RL

40

1VGSVT)

2MOSFET

GAT

GDGSG

CCRt

GAGS

VVCCRt

eVtV GDGSG

1

1ln

1)(

1

IL MOSFET

LTGAm

TGAmGDGSG

T

CCRt

GAmTGSmDS

IVVg

VVgCCRt

VeVgVVgtI GDGSG

ln

1)(

2

41

3MOSFETVSVF MOSFETIL

CM(=CGD)

GP

m

LTGS V

g

IVV

FDS

m

LTGA

GDGFS

GD

GDSDG

m

LTGA

GDG

SDS

m

LTGA

GG

GPGAG

VtV

g

IVV

CRVVt

C

I

dt

dV

dt

dVt

g

IVV

CRVtV

g

IVV

RR

VVI

)( ,

,1

)(

1

33

RGCGD 42

MOSFET

TV t

GAVGPV

t

t

LI

FV

4t 5t 6t

SV

DSI

GSV

DSV

VG=VGA, IDS=IL, VDS=VF t=0 0

GS RL

43

4IL

mLT

GAGDGSG

CCRt

GA

m

LTGS

CCRt

GAGS

gIV

VCCRt

eVg

IVtV

eVV

GDGSG

GDGSG

ln

)(

4

44

RG

44

5MOSFETVFVS MOSFETIL

CM(=CGD)

GP

m

LTGS V

g

IVV

SDSmLT

FSGDG

GD

GDSDG

GDG

mLTFDS

G

mLT

G

GSG

VtVgIV

VVCRt

C

I

dt

dV

dt

dVt

CR

gIVVtV

R

gIV

R

VI

)( ,

,)(

55

45

6MOSFETVGPVT

LS LS MOSFET

0)( ,1ln

)(

)(

66

tIVg

ICCRt

VgeIVgtI

eg

IVtV

DS

Tm

LGDGSG

Tm

CCRt

LTmDS

CCRt

m

LTGS

GDGSG

GDGSG

RGCGD CGD

46

MOSFET V/

GDC

GSC

dt

dV

NPN

BR

DBC

D

S

G

GR

1MI

2MI

GSV BEV

IM1MOSFET IM2 47

V/ IM1

dv/dt

GDG

TTGS

TGS

GDGMGGS

CR

V

dt

dVVV

VV

dt

dVCRIRV

MOSFET

MOSFET

1

dV/dt VT Ron VT

dV/dt VT 48

V/ IM2

dv/dt

DBB

bibiBE

biBE

DBBMBBE

CR

V

dt

dVVV

VV

dt

dVCRIRV

2

dV/dt RB PN

+LN+

RBP VbiRB

B

bi

R

V

-

49

MOSFET dV/

N

BR

N

NL

DBC

P

A

ARB 50

PN+

P N+P N+A BVCEO0.6BVCBO IC

nBSBD

kTIqR

BVV

1

0

,1

RBP+

I

51

MOSFET

BR

N

BR

ABI

MIEI

CI

SI

DI

N

N

NPN

S

G

D

52

MOSFET

BD

n

B

SBDV

I

R

BVV

,

11,

P IM

RBP+

53

MOSFETSOA

B B. Jayant Baliga

500V Tj150

54

MOSFET

N-

N+ N+

N+

P P

PiN MOSFET100A/cm2 N 55

MOSFET

IRR RB P

+

RRI

N+

N

P

BR

N+

P

P

56

3.2

300)25()(

TRTR onon

3.2

300)25()(

TgTg mm

57

B

gB

B

As

ox

BT

q

TE

TdT

d

qN

CdT

d

dT

dV

2

)0(1

21

P

58

MOSFET

c

Dcs

D

ncsD

Didealspon

E

BVW

qBV

EN

E

BV

Nq

WR

2 ,

2

4

2

3

2

)(,

devicesunipolar for merit of figure sBaliga:3 ncsE

GaAs / Si 12.7, SiC / Si 200

SiC UMOSFET

Si 1000VSi

59

Baliga-pair

Ron,sp Ron,sp 1000V 0.1V

Si MOSFET FBSOA

N+

N

Si MOSFET

SiC MESFET

DSiC

SB

SSiC

GSiC

DB

GB GM

SM

DM

N+

a

JFET

60

MOSFET

200V Ron SOA

200V PDP

MOSFET 600V

AC

70100V 1000V

SiC Ron,sp

Ron,sp1/200Si

61