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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com.

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0

April 2009

FOD073LLVTTL/LVCMOS Compatible Low Input Current High Gain Split Darlington Optocoupler

Features

Low power consumption

Low input current: 0.5mA

Dual channel 8-pin SOIC package

High CTR: 400% minimum

High CMR: 10kV/µs

Guaranteed performance over temperature 0°C to 70°C

U.L. recognized (File # E90700)

LVTTL/LVCMOS Compatible output

Applications

Digital logic ground isolation – LVTTL/LVCMOS

Telephone ring detector

EIA-RS-232C line receiver

High common mode noise line receiver

µP bus isolation

Current loop receiver

Description

The FOD073L optocoupler consists of an AlGaAs LEDoptically coupled to a high gain split darlington photo-detector. This device is specified to operate at a 3.3Vsupply voltage.

An integrated emitter – base resistor provides superiorstability over temperature.

The combination of a very low input current of 0.5mAand a high current transfer ratio of 2000% (typical)makes this device particularly useful for input interface toMOS, CMOS, LSTTL and EIA RS232C, while outputcompatibility is ensured to LVCMOS as well as highfan-out LVTTL requirements.

An internal noise shield provides exceptional commonmode rejection of 10kV/µs.

Schematic Package Outline

1

2

3

4 5

6

7

8+

_

VF1

VCC

V01

V02

GND

VF2

_

+

Truth Table

LED VO

ON LOW

OFF HIGH

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0 2

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Absolute Maximum Ratings

(No derating required up to 85°C)Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Units

T

STG

Storage Temperature -40 to +125 °C

T

OPR

Operating Temperature -40 to +85 °C

T

SOL

Lead Solder Temperature (Wave solder only. See reflow profile for surface mount devices)

260 for 10 sec °C

EMITTER

I

F

(avg) DC/Average Forward Input Current Each Channel 20 mA

I

F

(pk) Peak Forward Input Current (50% duty cycle, 1ms P.W.)

Each Channel 40 mA

I

F

(trans) Peak Transient Input Current (

≤

1µs P. W., 300 pps) Each Channel 1.0 A

V

R

Reverse Input Voltage Each Channel 5 V

P

D

Input Power Dissipation Each Channel 35 mW

DETECTOR

I

O

(avg) Average Output Current Each Channel 60 mA

V

EB

Emitter-Base Reverse Voltage (FOD070L, FOD270L) Each Channel 0.5 V

V

CC

,

V

O

Supply Voltage, Output Voltage Each Channel -0.5 to 7 V

P

D

Output power dissipation Each Channel 100 mW

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0 3

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Electrical Characteristics

(T

A

= 0 to 70°C unless otherwise specified)

Individual Component Characteristics

Transfer Characteristics

Switching Characteristics

(V

CC

= 3.3 V)

*All typicals at T

A

= 25°C

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

EMITTER

V

F

Input Forward Voltage T

A

=25°C 1.35 1.7 V

I

F

= 1.6mA (Each Channel) 1.75

BV

R

Input Reverse Breakdown Voltage

T

A

=25°C, I

R

= 10µA (Each Channel)

5.0 V

DETECTOR

I

OH

Logic High Output Current I

F

= 0 mA, V

O

= V

CC

= 3.3V (Each Channel)

0.05 25 µA

I

CCL

Logic Low Supply Current I

F1

= I

F2

= 1.6mA, V

O1

= V

O2

= Open, V

CC

= 3.3V0.8 3 mA

I

CCH

Logic High Supply Current I

F1

= I

F2

= 0mA,V

O1

= V

O2

= Open, V

CC

= 3.3V0.01 2 µA

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

CTR COUPLEDCurrent Transfer Ratio(Note 1)

I

F

= 0.5mA, V

O

= 0.4V, V

CC

= 3.3V 400 7000 %

V

OL

Logic Low Output Voltage I

F

= 1.6mA, I

O

= 8mA, V

CC

= 3.3V 0.07 0.3 V

I

F

= 5mA, I

O

= 15mA, V

CC

= 3.3V 0.07 0.4

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

T

PHL

Propagation DelayTime to Logic LOW

R

L

= 4.7k

Ω

, I

F

= 0.5mA(Fig. 9)

5 30 µs

T

PLH

Propagation DelayTime to Logic HIGH

R

L

= 4.7k

Ω

, I

F

= 0.5mA(Fig. 9)

25 90 µs

|CM

H

| Common Mode TransientImmunity at Logic HIGH

I

F

= 0 mA, |V

CM

| = 10 V

P-P

, T

A

= 25°C, R

L

= 2.2k

Ω

(Note 2) (Fig. 10)1,000 10,000 V/µs

|CM

L

| Common Mode TransientImmunity at Logic LOW

I

F

= 1.6mA, |V

CM

| = 10 V

P-P

, R

L

= 2.2k

Ω

, T

A

= 25°C (Note 2) (Fig. 10)1,000 10,000 V/µs

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0 4

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Electrical Characteristics

(Continued) (T

A

= 0 to 70°C unless otherwise specified)

Isolation Characteristics

*All typicals at T

A

= 25°C

Notes:

1. Current Transfer Ratio is defined as a ratio of output collector current, I

O

, to the forward LED input current, I

F

, times 100%.

2. Common mode transient immunity in logic high level is the maximum tolerable (positive) dV

CM

/dt on the leading edge of the common mode pulse signal, V

CM

, to assure that the output will remain in a logic high state (i.e., V

O

> 2.0V). Common mode transient immunity in logic low level is the maximum tolerable (negative) dV

CM

/dt on the trailing edge of the common mode pulse signal, V

CM

, to assure that the output will remain in a logic low state (i.e., V

O

<0.8 V).

3. Device is considered a two terminal device: Pins 1, 2, 3 and 4 are shorted together and Pins 5, 6, 7 and 8 are shorted together.

4. CI-O is measured by shorting pins 1 and 2 or pins 3 and 4 together and pins 5 through 8 shorted together.

5. Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together.

Symbol Characteristics Test Conditions Min. Typ.* Max. Unit

I

I-O

Input-Output Insulation Leakage Current

Relative humidity = 45%, T

A

= 25°C, t = 5 s, V

I-O

= 3000 VDC (Note 3)1.0 µA

V

ISO

Withstand Insulation Test Voltage

R

H

≤ 50%, TA = 25°C, II-O ≤ 2µA, t = 1 min. (Note 3)

2500 VRMS

RI-O Resistance (Input to Output) VI-O = 500 VDC (Note 3) 1012 Ω

CI-O Capacitance (Input to Output) f = 1 MHz (Notes 3, 4) 0.7 pF

II-I Input-Input Insulation Leakage Current

RH ≤ 45%, VI-I = 500 VDC (Note 5) 0.005 µA

RI-I Input-Input Resistance VI-I = 500 VDC (Note 5) 1011 Ω

CI-I Input-Input Capacitance f = 1 MHz (Note 5) 0.03 pF

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0 5

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Typical Performance Curves

Fig. 1 Input Forward Current vs Forward Voltage

VF - FORWARD VOLTAGE (V)

1.11.00.9 1.2 1.3 1.4 1.5 1.6 1.7

I F -

FO

RW

AR

D C

UR

RE

NT

(m

A)

0.001

0.01

0.1

1

10

100

CT

R -

CU

RR

EN

T T

RA

NS

FE

R R

ATIO

(%

)

VO - OUTPUT VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.00

20

40

60

80

100

120

140

Fig. 3 DC Transfer Characterstics

I O -

OU

TP

UT

CU

RR

EN

T (

mA

)

TA = 85°C

TA = 70°C

TA = 25°C

TA = -40°C

TA = 0°C

4mA

3.5mA

2.5mA

0.5mA

3mA

2mA

1mA

TA = 25°CVCC = 3.3V

IF = 5mA

IF = 4.5mA

1.5mA

Fig. 2 Current Transfer Ratio vs. Input Forward Current

IF - FORWARD CURRENT (mA)

1 100.1

CT

R -

CU

RR

EN

T T

RA

NS

FE

R R

ATIO

(%

)

0

500

1000

1500

2000

2500

3000

3500VO = 0.4VVCC = 3.3VTA = 25°CTA = 85°C

TA = 70°C

TA = 25°C

TA = 0°C

TA = -40°C

Fig. 4 Supply Current vs Input Forward Current

IF - Input Forward Current (mA)

0.1 1 10

I CC

- (

Per

Cha

nnel

) -

Sup

ply

Cur

rent

(m

A)

0.01

0.1

1

10

Fig. 6 Propagation Delay vs. Ambient TemperatureFig. 5 Output Current vs Input Forward Current

TA - Ambient Temperature (°C)

-40 -20 0 20 40 60 80 100

t P -

Pro

paga

tion

Del

ay (

µs)

IF - Forward Current (mA)

0.1 1 10

I O -

Out

put C

urre

nt (

mA

)

0.1

10

1

100

TA = 25°CVCC = 3.3V

tPLH

tPHL

0

40

30

20

10

50

60

70

VO = 0.4VVCC = 3.3VTA = 25°C

TA = -40°CTA = 70°C, 85°C

TA = 0°CTA = 25°C

VCC = 3.3VIF = 0.5mARL = 4.7kΩ1/f = 100µsDuty Cycle = 10%

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0 6

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Typical Performance Curves (Continued)

Fig. 7 Propagation Delay To Logic Low vs Pulse Period

T - Pulse Period (ms)

0.01 0.1 1 10

tPLH

tPHLt PH

L -

Pro

paga

tion

Del

ay to

Log

ic L

ow (

µs)

1

10

100

Fig. 8 Propagation Delay vs. Input Forward Current

IF - Input Forward Current (mA)

0 1 2 3 4 5 6 7 8 9 10

t PH

L -

Pro

paga

tion

Del

ay to

Log

ic L

ow (

µs)

t PLH

- P

ropa

gatio

n D

elay

to L

ogic

Hig

h (µ

s)

0

4

2

6

8

12

10

16

24

22

20

18

26

28

TA = 25°CVCC = 3.3VI = 0.5mARL = 4.7kΩDuty Cycle = 50µs

TA = 25°CVCC = 3.3VRL = 4.7kΩ1/f = 100µsDuty Cycle = 10%

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0 7

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Fig. 10 Common Mode Immunity Test Circuit

Fig. 9 Switching Time Test Circuit

PLH

OLV

VO3.3 V

50%

FI

50%

TPHLT

4 5

Noise

1

2

3

Shield8

7

6

OV

VCC

V01

V02

GND

VF1

-

+

F2V

FI +

FIMONITOR

LR 0.1 µF

PulseGeneratortr = 5nsZ = 50O V

+3.3 V

*Includes Probe and Fixture Capacitance

Rm

-C = 15 pF*L

Switch at A : I = 0 mAF

Switch at B : I = 1.6 mAF

tr

VO

OV

OLV

3.3 V

0 V10% 10%

90%CMV 10 V

GND+

-

F2V

VF1

-

+3.3 VCCV

L

V02

VR

01VO

VCM

A

B

Pulse Gen

FI

+ -

+

ftFFV

90%

1

3

4

2

ShieldNoise

8

6

5

7

0.1 µF

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0 8

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Ordering Information

Marking Information

OptionOrder Entry

Identifier Description

No Suffix FOD073L Shipped in tubes (50 units per tube)

R2 FOD073LR2 Tape and reel (2,500 units per reel)

12

5

3 4

Definitions

1 Fairchild logo

2 Device number

3 One digit year code, e.g., ‘3’

4 Two digit work week ranging from ‘01’ to ‘53’

5 Assembly package code

73L

SYYX

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0 9

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Carrier Tape Specifications

4.0 ± 0.10

Ø1.5 MIN

User Direction of Feed

2.0 ± 0.05

1.75 ± 0.10

5.5 ± 0.05

12.0 ± 0.3

8.0 ± 0.10

0.30 MAX

8.3 ± 0.10

3.50 ± 0.20

Dimensions in mm

0.1 MAX6.40 ± 0.20

5.20 ± 0.20

Ø1.5 ± 0.1

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.comFOD073L Rev. 1.0 10

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Reflow Profile

Profile Freature Pb-Free Assembly Profile

Temperature Min. (Tsmin) 150°C

Temperature Max. (Tsmax) 200°C

Time (tS) from (Tsmin to Tsmax) 60–120 seconds

Ramp-up Rate (tL to tP) 3°C/second max.

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL) 60–150 seconds

Peak Body Package Temperature 260°C +0°C / –5°C

Time (tP) within 5°C of 260°C 30 seconds

Ramp-down Rate (TP to TL) 6°C/second max.

Time 25°C to Peak Temperature 8 minutes max.

Time (seconds)

Tem

per

atu

re (

°C)

Time 25°C to Peak

260

240

220

200

180

160

140

120

100

80

60

40

20

0

TL

ts

tL

tP

TP

Tsmax

Tsmin

120

Preheat Area

Max. Ramp-up Rate = 3°C/SMax. Ramp-down Rate = 6°C/S

240 360

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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