No.G005-J

( Rare-earth Iron Garnet single crystals )

5/1/2013

1

1. 2 2. 3. 4. 3

4-1. 4-2. 4 4-3. 5 4-4. 5. 6

5-1. 5-1-1.

5-1-2. 5-1-3. 7

5-1-4. 8 5-1-5. 9

5-2. 10 5-2-1. 5-2-2. 5-2-3. 11 5-2-4.

5-3. 12 5-3-1. 5-3-2. 13 6. 14 6-1. 6-2. 6-3. 15

6-3-1 16 6-3-2 GMF 17

6-4. 18

7. 19 7-1. 7-2. 7-2-1. A() 7-2-2. E() 20 7-3. 8. 8-1. 8-2. 21 8-2-1. 8-2-2. 9. 22 9-1. 9-2. AR 9-3. AR 23 9-4. 10. 10-1. 24 10-2. 10-3.

2

1.

RoHS G

GTD (TD Temperature Dependence )

GLB (LB L-Band )L GSF (SF Saturation Field )

GMF (MF Magnet-Free ) E

ETD GTD 2.

AAABBBBCD ex. GTD 1550 L A - 45 0.5 AAA GTD, GLB, GSF, GMF, ETD BBBB 1550(nm); 1310(nm), etc. C L; 11mm C; D A; E; N; X;

*

3.

45 , Dq/Dl(deg/nm) GTD GLB GSF GMF ETD

1310nm 0.085 0.085 0.085 0.085 1480nm 0.07 0.075 0.075 0.075 0.07 1550nm 0.06 0.07 0.065 0.065 0.06 1590nm 0.055 0.065 0.06 0.06 0.055

45 , Dq/DT (deg/C) GTD GLB GSF GMF ETD

1310nm 0.04 0.04 1480 - 1590nm 0.045 0.065

0.07 0.07 0.045

(dB) GTD GLB GSF GMF ETD

1310 - 1550nm 0.1 0.1 0.1 0.1 1590nm 0.16

0.05 0.12 0.16 0.16

(m) (typ.) GTD GLB GSF GMF ETD

1310nm 310 320 280 310 1550nm 450 390 475 420 450

GTD GLB GSF GMF ETD

Hs(Oe) 700 800 200 700

Tcomp.(C)

3

4. (RIG) 4-1.

(RIG)(LPE) RIG (C3)(A2D3)O12 4-1

4-1 4-2 RIG

4-1

Table. 4-1 RIG GTD GLB GSF GMF ETD

() 12.5 (10-6 K-1) 11 10 11 (1550nm) * Fig.4-2 2.3 2.4 * 7 *(GPa) 200 * 0.29 *(g/cm3) 6.7 *(W/m K) 5 *(J/mole K) 420

*

4-2

Oxygen ions

octahedral sites

dodecahedral sites

tetrahedral sites

2.20

2.30

2.40

2.50

800 1000 1200 1400 1600 1800Wavelength(nm)

Inde

x GLB

GMF

GTD, ETDGSF

4

4-2.

RIG 1m 5m

RIG 10002000(deg/cm) 4-3 GTD 1cm 3 45

RIG

(5-1-5 )AR (5-1-4 )()4-3

RIG

GLB L 5-2

4-3

5

4-3.

RIG () LPE RIG 4-1 2 2 (5-3 )RIG

RIG RIG

GMF GMF GMF GMF 6

.4-1 RIG

4-4.

RIG LPE 5000ppm GTD GLBGSFGMF G ETD 4-4 G 1000ppm RoHS

Fig.4-4

500

600

700

800

900

1000

Lead Impurities ( ppm )

Freq

uenc

y

GSFGTDGLB

GMF

6

5. 5-1. 5-1-1.

5-1

DFB

5-1

5-1-2.

5-2 5-3 GTD 3 45 1nm O E C L

5-2 GTD1310

5-3 GTD1550

Collimator

SM-fiber

Light Source

Polarizer

Faraday RotatorMagnet

Themometer

Analyzer Detector

Power Meter

Contoroller (PC)

7

5-1-3.

5-4 5-5 GTD 45 1 050GTD ETD 1310nm 1550nm

5-6

5-4 GTD1310

5-5

5-6

40

45

50

-50 0 50 100Temerature

Fara

day

Ang

le

degr

ee)

40

50

-50 0 50 100Temperature

Fara

day

Ang

le

degr

ee)

GTD1550ETD1550

GLB1550

GSF1550

-50

-40

-30

-20

-10

0

-50 50 150 250Temperature ()

Ext

inct

ion

Rat

io (d

B)

8

5-1-4.

5-8

5-7 RIG RIG

5-7

5-8

AR

AR RIG 3 5

5-9

5-9

( thickness ) / cos () ( Magnetization ) x cos () incident angle : light Magnetization

44

44.5

45

45.5

46

0 10 20 30 40 50Incident angle (deg)

Fara

day

rota

tion

(deg

)

-50

-40

-30

-20

-10

0

Ext

inct

ion

ratio

(dB

)

0

0.5

1

0 20 40 60Incident angle of light (deg)

Inse

rtion

Los

s (d

B)

9

5-1-5.

5-11 5-10 5-11 22.5 45 5-10

5-11

E

linearly polarized light

load

pressure sensor

0

10

20

30

40

50-67.5 -45 -22.5 0 22.5 45

polarization plane for stress (degree)

Ext

inct

ion

Rat

io (d

B)

0(N/mm ) 3 610121417

2

10

0

0.2

0.4

0.6

0.8

1

1300 1400 1500 1600 1700

Wavelength(nm)

Inse

rtion

Los

s(dB

)

GLB

GSF

GTD, ETD

GMF

5-2. 5-2-1.

5-12 PF

DFE

5-12

5-2-2.

5-13 C L GLB L L GLB

5-14 GLB GLB 1.5 GLB

5-13

5-14 GLB

0

2

4

6

8

700 800 900 1000 1100Wavelength(nm)

Inse

rtion

Los

s(dB

)

Collimator

SM-fiber

Light Source

Faraday RotatorMagnet

Slit Detector

Power Meter

Contoroller (PC)

11

5-2-3.

()

5-2-4.

5-15 5-16 5-15 GTD1310 5-16 1mm

5-15 GTD1310

5-16 GLB

0

5

10

0 25 50 75 100 125Temperature (

Los

s(dB

) 973nm

786nm

1064nm

0

0.1

0.2

0.3

0.4

0.5

-50 -25 0 25 50 75 100Temperature (

Los

s(dB

)

GTD1310

12

5-3. 5-3-1.

RIG RIG 4-1

RIG (5-3-2 ) RIG

5-17 RIG

5-18

RIG

5-18

Hex

d2d1

+Ms

-Msmagnetization

substrate

Faraday rotation

domain-1

domain-2

-qf)( +qf)(

0

10

20

30

40

50

0 200 400 600 800Magnetic Field Hex (Oe)

Fara

day

Ang

le (d

eg)

20

25

30

35

40

45

50

Ext

inct

in R

atio

(dB

)

13

5-3-2.

5-190 (n=0) 45 -3dB-1dB

5-19

-2

-1

n = 0

+1

+2

incidentpolarization

q(0)

14

-1.5

-1

-0.5

0

0.5

1

1.5

-1000 -500 0 500 1000

Hex(Oe)

m/M

s

Hs

Hn

6. 6-1.

6-1 2 2 6-2 GTD

Hs Hn Hc

6-1

Hs :

6-2 Hn :

Hn 6-4

Hc : GMF

Hc Hn GMFHc 6-3

6-2 GTD

Collimator

SM-fiber

Light Source

Polarizer

Faraday RotatorElectro-magnet

Gauss-meter

Analyzer PD

Voltmeter

Contoroller (PC)

Voltmeter

15

0

500

1000

1500

-50 0 50 100 150Temperature()

Sat

urat

ion

Fiel

d H

s(O

e)

GTDETD

6-2.

RIG RIG GMF Hs RIG 6-3GTD ETD Hs 6-4 GSF -2085

6-3 GTD ETD

Hs 6-5 / ( 1) 6-5 1mm

6-4 GSF

6-5

0

50

100

150

200

250

-50 0 50 100Temperature()

Hs

(Oe)

1.

5mm

0.0

0.2

0.4

0.6

0.8

1.0

1 10 100size / thickness

Dem

agne

tizin

g Fa

ctor

N

16

6-3. 6-3-1.

6-6 GMF GMF

() Hc GMF

GMF Hc 400(Oe) 2000(Oe) Hc Hc

6-6 GMF Hex-

6-7 GMF Hc Hc GMF

6-7 Hc

-50

-40

-30

-20

-10

0

10

20

30

40

50

-1000 -500 0 500 1000

Hex(Oe)

Fara

day

Ang

le (d

eg)

Hc 0

20

40

60

80

0 50 100 150Temperature ()

Coe

rciv

e Fo

rce

(kA

/m)

0

500

1000

Coe

rciv

e Fo

rce

(Oe)

typical

minimum

17

6-3-2. GMF

GMF GMF GMF

GMF 6-8 ()

6-8

Hc 6-7

Hc Hc Hc Hc

GMF

GMF

GMF 40 3000(Oe)(25)( 1 ) 400(Oe)

Magnetic Garnet

Single Crystal

Chip tray

Direction of Magnetization

Direction of Magnetization

Direction of rotation

Ray of light

Direction of magnetization

Po larization

Magnetic Garnet

Single Crystal

Direction of Polarization

18

6-4.

RIG ( Tcomp. )( Tc )()220300RIG () 0 0 RIG () 0 ()RIG

6-9 GMF GMF -10-10RIG ()GMF 6-10 GMF

6-9

6-10

-60

-40

-20

0

20

40

60

-50 0 50 100

Temerature

Fara

day

Ang

le

degr

ee)

-60

-40

-20

0

20

40

60

-50 0 50 100

Temerature

Fara

day

Ang

le

degr

ee)

Tcomp.

19

7. ( AR-Coating ) 7-1.

Table.7-1. Item code Index ()

A 0.2 % E 1300 1650 nm 0.2 % N X

7-1

AE

7-2. 7-2-1. A()

A( 1)

ASiO2/TiO2 SiO2/TaO5 7-1 1550nm SiO2/TaO5

ARIG(n=2.39 4-1 )(n=1.96) GLB1064RIG RIG 7-1 A()

0

0.2

0.4

0.6

0.8

1

1400 1500 1600 1700

Wavelength (nm)

Ref

lect

ion

(%)

20

0

0.1

0.2

0.3

0.4

0.5

1450 1500 1550 1600 1650

Wavelength (nm)

Ref

lect

ion

(%)

Incidente angle5 degree

10 degree (p)20 degree (s)20 degree (p)30 degree (s)30 degree (p)

7-2-2. E()

E1300nm 1650nm ESiO2/TiO 7-2

7-2

7-3.

7-3 A

7-3

8. 8-1.

()GMF

1002000 -402000 9090Rh2000 -45 901000

0

0.1

0.2

0.3

0.4

0.5

1250 1350 1450 1550 1650

Wavelength (nm)

Ref

lect

ion

(%)

n=1.62n=1.58n=1.54n=1.50

21

8-2. 8-2-1.

8-1

100 MW/cm2

18 mmf 0-800 MW/cm2

20 ns 6 kHz

2 sec

8-1

8-2-2.

8-2 A1T1064 1064nm 1mm YAG 100mW 1064nm A1T1064 0.8dB A1T1064nm

200mW RIG RIG RIG (5-1-4 ) A1T1064 1W 1200-1600nm W

* A1T1064 GLB1064

8-2

0

5

10

0 200 400 600 800Peak power (MW/cm )

Dep

th o

f dam

age

(mm

)

Pulsed laser : 1558nm, 18 mmf , 6kHz, 20ns

Thresholds : 100 (MW/cm )( 260W 18mmf )

2

2

0

200

400

600

800

1000

0 200 400 600 800 1000Input Power Pi(mW)

Out

put P

ower

Po(

mW

)

0

20

40

60

80

100

Po/

Pi(%

)YAG0.7~1.1mmf

with substrate

without substrate

22

9. 9-1.

9-1 11mm AR

10.5x10.5mm

1mm (AR )

RIG 2mm 5mm

5mm 10mm

AR 2mm 20mm 20mm

10mm

AR 50mm 30mm 350mm

350mm 5

9-2 AR

1mm (- 0.2)mmf

1mm2mm (0.8)mmf RIG 2mm

2mm 5mm 5mm

0.8

AR < 2mm 2mm 20mm

20mm

0.8

AR 20mm 10mm

10mm 30mm 30mm

5

9-2. AR

9-1 ()()300m 400m

9-1 9-2 AR 9-2 AR

AR AR 9-3 AR

0

0.1

0.2

0.3

0.4

0.5

0 20 40 60 80 100Size of a defect (mm)

Inse

rtion

Los

s(dB

)

Calculation Results( defect )Beam Diameter 300mm

Beam Diameter 400mm

23

9-2 AR ]

9-3 AR

9-3. RIG AR

9-4 RIG () AR 2

9-4 RIG

9-4.

9-5

0

0.05

0.1

0.15

0.2

0 10 20 30 40 50Daimeter of a AR pinhole(mm)

Inse

rtion

Los

s(dB

)

0

10

20

30

40

Ref

lect

ion(

dB)

Calcuation Results( AR-coat spot for Air )

Beam Diameter = 300mm

A(long)

B(short)

chipping

chipping

0.00

0.05

0.10

0.15

0.20

0 100 200 300 400

Distance from beam center (mm)

Inse

rtion

Los

s (d

B)

0

10

20

30

40

exis

tenc

e pr

obab

ility

(%)

calculation parametersdefect size ; 50mmf

beam radius ; 300mmfoptical effective area ; 750mmf

0

0.05

0.1

0.15

0.2

0 1 2 3 4 5Width of a scratch (m)

Inse

rtion

Los

s(dB

)

Calculation Results( scratches )

Beam Diameter = 300m

24

10. 10-1.

10-1 ()

GGG (LPE )RIG GGG GGG RIG 10-1

RIG

10-1

10-2.

10-1V LPE RIG RIG

10-3.

RIG 10-1

RIG GGG CMP CMP

10-1

10-2