InON

1

1 .......................................................................................................................................3 1.1 ..............................................................................................................................3 1.2 ..............................................................................................................................3 2 .......................................................................................4

2.1 ......................................................................................................................4 2.1.1 ...........................................................................................................4 2.1.2 RF..................................................................................5 2.1.3 ...................................................................................6 2.1.4 ...............................................................................................7

2.2 ..................................................................................................................................8 2.2.1 ...............................................................................................................................8 2.2.2 ...................................................................................................................9 2.2.3 Rapid Thermal Anneal (RTA) ...............................................................................10

3 .................................................................................................................12 3.1 X (X-ray Diffraction:XRD)..................................................................................12 3.2 ............................................................................................................................13 3.3 Photoluminescence (PL) ..............................................................................................14 4 .................................................................................................................15

4.1 ................................................................................................................................15 4.2 ................................................................................................................................16 5 InON...............................................................................................................17

5.1 InON.............................................................................................17 5.1.1 XRD .......................................................................................................................17 5.1.2 .....................................................................................................................19 5.1.3 PL...........................................................................................................................20 5.1.4 .........................................................................................21

5.2 300 InON...........................................................................................22 5.2.1 XRD .......................................................................................................................22 5.2.2 .............................................................................................................26 5.2.3 PL...........................................................................................................................27 5.2.4 .........................................................................................28

6 .....................................................................................................................................29 ........................................................................................................................................30

2

InN:Zn ...............................................32 1 ...............................................................................................................................32 2 .......................................................................................................................33

2.1 X (X-ray Photoelectron Spectroscopy:XPS) .......................................33 2.2 ................................................................................................................35

3 .......................................................................................................................36 4 InN:Zn..................................................................................................................37

4.1 InN:Zn ..............................................................................37 4.2 300 InN:Zn ............................................................................41

5 ..........................................................................................................................................45 ........................................................................................................................................46 ....................................................................................................................................................47

3

1 1.1

InN

InN

InN 1.9 eV[1-4]

InNMetal Organic Chemical Vapor

Deposition : MOCVDMolecular Beam Epitaxy : MBE

0.7 eV 1.2 eV

[5-12]

InN MBE InN MBE

[13]

InN

1.9 eV InN

InN InN

1.9 eV2.0 eV

1.2 InN

2.0 eV PL

4

2 2.1

2.1.1 ()

(sputtering)

( Ar)

Fig. 2.1

5

2.1.2 RF[14]

(Radio Frequency :RF)

RF Fig. 2.1

Fig. 2.2(13.56 MHz)

Fig. 2.3 (DC )

DC

Fig. 2.2 Fig. 2.3

6

2.1.3 [15]

Fig.

2.4

Fig. 2.4

7

2.1.4

In N2N2 O2

8

2.2 RF

2.2.1

Fig. 2.5 500 (1/s)

250 (1/s)

Fig. 2.5

9

2.2.2 Fig. 2.6

2

Substrate heater

Fig. 2.6

10

2.2.3 Rapid Thermal Anneal (RTA) MINI-LAMP-ANNEALER

MILA-3000

(100 V-1kW / )

O

O

Fig. 2.7

11

PID PID

Fig. 2.8

)11()( DSIS

pPID TTKsG

2.1

TI TD

ProportionalIntegral

DerivativePID

PID

Gc(s) Gp(s)C(s)R(s)

+-

GPID(s)

Gc(s) Gp(s)C(s)R(s)

+-

GPID(s)

Fig. 2.8

12

3 3.1 X (X-ray Diffraction:XRD)[16] Fig. 3.1 X

X X

X

Bragg

nd sin2 (3.1)

d: : :Xn:

X Bragg X

X

X 2 ()

()

Table 3.1 X

(X ) Cu (K:1.542)

(kV) 32

(mA) 20

(deg/min)

4

(mm) 10

(mm) 0.15

(mm) 20 Fig. 3.1

Table 3.1 X

13

3.2 [17]

( V-570)

Table 3.2

1001ln1

Td (3.2)

d (cm)T (%)

Table 3.2

T

Fast

(nm) 5.0

(nm/min) 400

(nm) 240 2500

14

3.3 Photoluminescence (PL) [18]

Luminescence

Photoluminescence

PL Fig. 3.2He-Cd 325 nm

U-340 2

2

He-Cd

(CCD)

PC

Fig. 3.2 PL

15

4 4.1

1. 10

2. 10

3. 10

4.

RF

1.

2.

3. 4.0104 Pa

4. N2

O2 N2 O2

5.

6.

[]

1. RTA InNInON

2. N2 250 sccm 10

3.

4. 50

16

4.2 Table 4.1 RF InNInON

Table 4.2

0 1000013000 5 700010000 1030

30005000

Table 4.1

In (2)

N2 (2.6102 Pa)

N2+O2 (N2 0%~30%)

(Pa) 0.27

(min) 60

(W) 50

7059p Si(100)

300

Table 4.2

min 1030

300600

sccm 250

17

5 InON 5.1 InON 5.1.1 XRD Fig. 5.1 Si XRD

0510202 2040

0 InN(0002)5 0

In2O3 (222)

10 20 In2O3

5.1.2 Fig. 5.310 In2O3

0

100

200

In2O

3(2

22)

In2O

3(2

22)

20 30 400

100

200

10%

20%

In2O

3(4

00)

In2O

3(3

21)

0

1

2[ 105]0%

InN

(000

2)

0

20005%

Inte

nsity

(cou

nts)

2 (degree)

Fig.5.1 XRD

18

Fig. 5.2 Si 600 30

XRD 0 5 In2O3(222)

InN In2O3[19-21]

10(Fig. 5.1)

Fig. 5.2 XRD ()

0

4000

8000

Inte

nsity

(cou

nts)

2 (deg)

In2O

3(2

22)

0

500

10005%

0

200

40010%

In2O

3(3

21)

20 30 400

500

1000

0%

20%

In2O

3(4

00)

19

5.1.2 Fig. 5.3 0

(InN) 2.0 eV5 2.5 eV10 3.5 eV

0 2.0 eV

InN10 3.5 eV In2O3

5.1.1

10 In2O3

2 3 40

1

2

3

4

5

6

O2 0% O2 5% O2 10% O2 20% O2 30%

Photon energy (eV)

2

(109

cm

-2 )

Fig. 5.4 600 30

0

5 3.4 eV

10 as-deposited In2O3

Fig. 5.3

20

5.1.3 PL Fig. 5.5 Si 600 30

PL 0 5

2.0 eV PL 10

30

1.5 2 2.5 3Photon energy (eV)

PL in

tens

ity (a

rb. u

nits)

0% 5%

2 3 40

0.2

0.4

0.6

0.8

1

0% 5% 10% 20% 30%

2

(101

0 cm

-2 )

Photon energy (eV)Fig. 5.4 ()

Fig. 5.5 PL ()

21

5.1.4 Fig. 5.6 0 Si 600 30

0 5

Fig. 5.6

22

5.2 300 InON 5.2.1 XRD Fig. 5.7 300 Si XRD 05

InN(0002)1020 In2O3

XRD(Fig. 5.1)

300

0

500

10000

1

2[ 105]

20 30 400

500

1000

0

0.5

1[ 105]In

N(0

002)

In2O

3(2

22)

In2O

3(3

21)

In2O

3(4

00)

In2O

3(2

11)

InN

(000

2)

In2O

3(2

22)

In2O

3(3

21)

In2O

3(4

00)

Inte

nsity

(cou

nts)

2 (degree)

0

5

10

20

Fig. 5.7 XRD

23

Fig. 5.8 300 Si 600 30

XRD In2O3

0 5 InN In2O31020

0

20

40

2 (degree)

Inte

nsity

(103

cou

nts)

0%

In2O

3(2

22)

0

100

200 5%

In2O

3(2

22)

In2O

3(2

22)

In2O

3(2

11)

In2O

3(2

11)

In2O

3(4

00)

In2O

3(4

00)

0

2

4 10%In

2O3

(321

)In

2O3

(321

)

20 25 30 35 400

4

8 20%

In2O

3(2

22)

In2O

3(4

11)

Fig. 5.8 XRD ()

24

()

0300 Si 600 1030

XRD Fig. 5.9

0 (as-deposited)10 15 20 30In2O3(222)

InN(0002) PDF 0(as-deposited)

InN(0002)10 20 InN(0002) In2O3(222)

30 In2O3

30 31 32

0 min

10min

15min

20min

30min

2 (degree)

Inte

nsity

(arb

. uni

ts)

Fig. 5.9 XRD ()

InN(0002) In2O3(222)

25

()

0300 Si 300600 30

XRD Fig. 5.10

(as-deposited)300400 InN(0002)

500 InN(0002) In2O3(222)InN

600In2O3

30 31 32

as-deposited

300

400

500

600

Inte

nsity

(arb

. uni

ts)

2 (degree)

Fig. 5.9 Fig.5.10InN In2O3

InN In2O3InON

In2O3(222) InN(0002)

Fig. 5.10 XRD ()

26

5.2.2 Fig. 5.11 300

0

1.5 eV

InN5 1.7 eV

10 2 eV

2030 3.5 eVIn2O3

1 2 3 40

0.2

0.4

0.6

0.8

1

Photon energy (eV)

2

(101

0 cm

-2 )

0% 5% 10% 20% 30%

Fig. 5.12 300 600 30

0 1.5 eV

2 eV 3 eV

5 2 eV

3 eV3 eV

1030 3.5 eV

1 2 3 40

0.5

1

1.5

Photon energy (eV)

2

(101

0 cm

-2 ) 0%

5% 10% 20% 30%

Fig. 5.11 (as-deposited)

Fig. 5.12 ()

27

5.2.3 PL Fig. 5.13 300 Si 600 30

PL 0 5

2.0 eV 10

1.5 2 2.5 3

PL in

tens

ity (a

rb. u

nits

)

Photon energy (eV)

0% 5%

Fig. 5.14 0300 Si 600 30

PL20 K 1.98 eV

300 K 2.10 eV

1.5 2 2.5 3

20 K40 K60 K80 K100 K120 K140 K160 K180 K200 K220 K240 K260 K280 K300 K

PL in

tens

ity (a

rb. u

nits

)

Photon energy (eV)

Fig. 5.13 PL ()

R.T.

Fig. 5.14 PL ( 0 N2)

28

Fig. 5.15 30300 Si 600 30

PL20K 1.85 eV

200 K

1.5 2 2.5 3

20 K40 K60 K80 K100 K120 K140 K160 K180 K200 K220 K240 K260 K280 K300 K

Photon energy (eV)

PL in

tens

ity (a

rb. u

nits

)

5.2.4 Fig. 5.16 0300 Si 600 30

300

Fig. 5.15 PL ( 0 N2)

Fig. 5.16

29

6 300

InON

XRD 300 0

5 InN 1030 In2O3

05 InN In2O3

1030

2.0 eV 3.6 eV

300 1.5 eV 3.5 eV

PL 0 5 2.0 eV

0 PL

1030

PL30 PL200 K

300

30

[1] T. L. Tansley and C. R. Foley, J. Appl. Phys. 59, (1986) 3241.

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31

[14] (1976).

[15] (1990).

[16] X

(1982).

[17] (1989).

[18] (1983).

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Cryst. Growth, 269, (2004) 145.

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32

InN:Zn

1 In2O33.5 eVLED

[1,2]

InN 500 In2O3

[3-5] p

np In2O3In2O3

InN Zn p

In2O3

33

2 3

2.1 X (X-ray Photoelectron Spectroscopy:XPS)

UPS X

XPS

UPSXPS 1

XPSXPS

X

Table 7.2.1 XPS

XPS

Mg 1253.6 eV

Al 1486.6 eV

X kE

bE kb EhvE (7.2.1) kE bE bE

XPS bE

2

1

XPS iXPS iI i i iN K iiii KNiII 0 (7.2.2) I

34

jiij

ijji

j

i

KIKI

NN

(7.2.3)

I

XPS

shake upshake off

XPS 1970

X

35

2.2 [6] pn

Fig. 7.2.1 n

Si

p

p n

p n

pn

0.5~10 A

200

Fig. 7.2.1

36

3 ZnIn Zn 330

Zn

Fig. 7.3.1 300

Table 7.3.1 Table 7.3.2

In + Zn (Zn: 330)

N2 (2.6102 Pa)

(Pa) 0.27

(min) 3060

(W) 50

7059n Si(100)(0001)

300

min 30

600

sccm 250

(a) Zn 3 (b)Zn 30

Fig. 7.3.1 In Zn

Table 7.3.1

Table 7.3.2

37

4 InN:Zn 4.1 InN:Zn 4.1.1 XPS Fig. 7.4.1 Zn2p3 XPSZn 3

Zn2p3 Zn

1.7%Zn 30 Zn2p3

Zn 14.6

Inte

nsity

(arb

. uni

ts)

Zn2p3

Binding Energy (eV)1020102510301035

3%

30%

4.1.2 XRD Fig. 7.4.2 Si XRD In

Zn 3 30 XRD

Zn 3 InN(0002)Zn3N2(134)

Zn 30 Zn3N2

Zn3N2[7,8] InN(101-

3)

Fig. 7.4.1 XPS

38

0

500

1000

Zn3N

2(22

2)

Zn3N

2(32

1)

Zn3N

2(13

4)Zn

3N2(

134)

InN

(101

3)

20 30 40 50 600

500

1000

Inte

nsity

(cou

nts)

2 (degree)

3%

30%

Zn3N

2(40

0)

InN

(101

3)

InN

(000

2)

Fig. 7.4.3 Si 600 30

XRDZn 3 In2O3

Zn 30ZnO

In2O3 Zn3N2

In

In2O3

0

500

1000

Inte

nsity

(cou

nts)

2 (degree)

3%

30%

In2O

3(22

2)

In2O

3(32

1)

In2O

3(40

0)

In2O

3(33

2)

In2O

3(44

0)

In2O

3(43

3)

In2O

3(61

1)

20 30 40 50 600

1000

In2O

3(21

1)

x

x

x

x

xoo

oo o

x: In2O3o: ZnO

Fig. 7.4.2 XRD

Fig. 7.4.3 XRD ()

- -

39

4.1.3 Fig. 7.4.4Zn 3

2.0 eV InN

Zn 30 1.4 eV

1 2 30

0.5

1

1.5

Photon energy (eV)

2

(109

cm

-2)

3%30%

Fig. 7.4.5 600 30

Zn 3

Zn 30 1.5 eV

3 eV

1 2 3 40

1

2

3

4

5

3%30%

Photon energy (eV)

2

(108

cm

-2)

Fig. 7.4.4

Fig. 7.4.5 ()

40

4.1.4 Zn 600 30

Zn 3

Zn 30

n

Table 7.4.1 ()

Zn 3% Zn 30%

Si n

n

41

4.2 300 InN:Zn 4.2.1 XPS Fig. 7.4.6 300 SiZn2p3XPSZn 3

30 Zn2p3

Zn 3 1.3 ZnZn

30 2.0 ZnZn 30

Zn 300

Zn

Inte

nsity

(arb

. uni

ts)

Zn2p3

Binding Energy (eV)1020102510301035

3%

30%

Fig. 7.4.6 XPS

42

4.2.2 XRD Fig. 7.4.7 300 Si XRDZn 3

InN(0002)

InN(101-

1)InN(101-

3)Zn 30 InN(0002)

InN(101-

1)InN(101-

3)InN(101-

2)Zn

0

500

1000

InN

(101

2)

InN

(000

2)

20 30 40 50 600

500

1000

3%

30%

Inte

nsity

(cou

nts)

2 (degree)

InN

(101

3)In

N(1

013)

InN

(101

1)In

N(1

011)

InN

(000

2)

Fig. 7.4.8 300 Si 600 30

XRD Zn 330 In2O3

Zn

Fig. 7.4.7 XRD

0

1000

2000

In2O

3(40

0)

20 30 40 50 600

1000

2000

2 (degree)

Inte

nsity

(cou

nts)

In2O

3(21

1)

In2O

3(22

2)

In2O

3(33

2)

In2O

3(44

0)In

2O3(

433)

In2O

3(43

3)

In2O

3(33

2)

In2O

3(32

1)

In2O

3(22

2)

In2O

3(21

1)

In2O

3(43

1)In

2O3(

431)

3%

30%

Fig. 7.4.8 XRD ()

- -

- -

-

43

4.2.3 Fig. 7.4.9 300Zn 3

301.5 eVZn

InN(Fig. 5.11)

1 1.5 2 2.50

2

4

6

2

(109

cm

-2)

Photon energy (eV)

3%30%

Fig 7.4.10 300 600 30

Zn 3

2.0 eVZn 30 3.5 eV

1 2 3 40

0.5

1

3%30%

Photon energy (eV)

2

(101

0 cm

-2)

Fig. 7.4.9

7.4.10 ()

44

4.2.4 Zn 300 600 30

Si

np

(Table 7.4.2)

Table 7.4.2

Zn3% Zn30%

Si n n n n

n n n n

n n n n

45

5 In Zn 330

InN:Zn

XPS Zn

1.714.6300 1.32.0

XRD Zn 30 Zn3N2

600 30 ZnO In2O3

300 ZnInN

Zn

Zn3%

2.0 eV30 1.4 eV300

Zn3Zn30% 1.5 eV

pn

np

46

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[6] () (1984).

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(2005) 88.

47

3