8. semiconductor crystals band gap equations of motion intrinsic carrier concentration impurity...
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8. Semiconductor Crystals
• Band Gap
• Equations of Motion
• Intrinsic Carrier Concentration
• Impurity Conductivity
• Thermoelectric Effects
• Semimetals
• Superlattices
Transistors, switches, diodes, photovoltaic cells, detectors, thermistors, …
IV: Si, GeIII-V: InSb, GaAsII-VI: ZnS, CdSIV-IV: SiC
Strong T dependence
Insulator: ρ > 1014 Ω cm
III IV V VI
B C N O
Al Si P S
Ga Ge As Se
In Sn Sb Te
Tl Pb Bi Po
SemiC: 109 > ρ > 10–2 Ω cm
Eg = 0.66 eV Eg = 1.11 eV
/g BE k T
in e
Intrinsic temperature range:σ indep of impurities
Band Gap
k k K
gE
k k k k
gE k k
210 eV
Excitons not shown
For γ & e of same energy,210F
e
vk
ck For ph & e of same k,
310ph
F
ph
e
v
v
ph emitted,low T.
InSb
Another way for determining Eg : σi (T) or ni (T) determined from RH .
III IV V VI
B C N O
Al Si P S
Ga Ge As Se
In Sn Sb Te
Tl Pb Bi Po
Equations of Motion
• Physical Derivation of k = F
• Holes
• Effective Mass
• Physical Interpretation of the Effective Mass
• Effective Masses in Semiconductors
• Silicon and Germanium
Wave packet: g kv1 k group velocity
Particle subjected to force F: kkg t v F
→
g k v
d
dt
kF
Lorentz force:1d
qdt c
k
kE B
→ Particles in contant B field move on surface of constant energy perpendicular to B.
Physical Derivation of dk/dt = F
Plane wave expansion: nin
n
C e k G rk r r k k
Electron momentum: el i P k k
* 3
,
1m ni i
m n nn m
C C d e e k G r k G rk k k G rV
2
n nn
C k k G
2
n nn
C k k G
21n
n
C k
2
el n nn
C kP k G k k
2
lat n nn
C kP G k k
tot el lat P P P k t Fd
dt
kF
Holes
h ek kfilled band
k 0
→
h h k
ε = 0 at top of valence band:
k k
→ e e e e k k
k kno spin-orbit interaction:
h e k
e e h h k k
Inversion symmetry →
hh h hkv k
e e ek k ev
h ev v
h em m see next section
1hh
de
dt c
kE v B
1ee
de
dt c
kE v B
e moves toward –kx ; so does h
C.B.
V.B.
e ee j v
E E
h hej v
e j v e v e v
Effective Mass1
g kv
1gd d
dt dt
k
v
1 d
dt
k k
k
2
1 k kF
2
1g ij
ji j
dvF
dt k k
2
2
1j
j i j
Fk k
1
* jj i j
Fm
* gd
dt
vm F
2
2
1
* i j i jm k k
= effective mass tensor ( of electrons )
Near zone boundary :
/2/2
21 g
k g KUU
2 2
2k
k
m
2
gk K
2
* 2 2/ /
1
m K
/221
1 g
m U
1
/22*1gm
m U
CBVB
CBVB
m* < 0 near top of VB
1
*gd
dt
vF
m
/22 g
U
band width
band gap
4
U << λg/2
Physical Interpretation of the Effective Mass
0 1
i k G xi k xC e C e
PW k + Bragg reflected k−G(p transferred to lattice)
vice versa
C0 / C−1 = 1 → standing wave
m* < 0
m* > 0
m* < 0
Effective Masses in Semiconductors
m* determined by cyclotron resonance (rf) at low carrier concentration.
*c
q B
m c
2 2
2vhh
khh
m
2 2
2vlh
klh
m
2 2
2vsoh
ksoh
m
1c
Condition for complete orbit without collison:
c Bk T
cyclotron frequency
Landau levels:
1
2n cE n
For m* = 0.1 and ωc = 24GHz,we have B = 852 gauss.
Prob 9.8 → m* Eg for direct-gap crystals
0.015 0.026 0.073, ,
0.23 0.43 1.42c
g
m
m E
For InSb, InAs, InP
0.065, 0.060, 0.051 Eg from Table 1
Silicon and Germanium
2 2 4 2 2 2 2 2 2 23/2 x y y z z xAk B k C k k k k k k k
VB at k=0 : p3/2 + p1/2
21/2 Ak k
CB of Ge with B in (110).CB edge at L.4 mass spheroids along [111]; 2 of which are equivalent in (110) plane.ml = 1.59 m, mt = 0.082 m.
2 2
2 2
1 cos sin
c t t lm m m m
θ = angle with
longitudinal axis
Si
GaAsDirect-gap
Spheroids along <100>.CB edges on Δ line near point X.ml = 0.92 m, mt = 0.19 m.
A=−6.89, B=−4.5, C=6.2, Δ =0.341
Isotropic mc = 0.067m.
Intrinsic Carrier Concentration
1
1ef
e
1 e 1
Bk T
Near CB edge:2
2ce
E k k km
Isotropic band:2 2
2ce
kE
m k
3/2
2 2
21
2e
e c
mD E
c
e eEn d D f
3/2
2 2
21
2 c
e
E
me d e
3/2
22
2cEem
e
*e cm m
11
h e
ef f
e
1 e
Near VB edge:2
2vh
E k k km
Isotropic band:2 2
2vh
kE
m k
3/2
2 2
21
2h
h v
mD E
vE
h hp d D f
3/2
22
2vEhm
e
1
1ef
e
1
1e
2
2
1
h i ji jk k
k 0
m
3/2
22
2cEem
n e
→ 3
3/2
2
14
2gE
e hn p m m e
np values at 300K:19 6 26 6 12 62.1 10 2.89 10 6.55 10
Si Ge GaAs
cm cm cm
(independent of doping)
0hm
1
* i j
m
Black body radiation:
d nA T B T n p
dt
A T
B T n pe h
At equilibrium:
A Tn p
B T = const at given T
Intrinsic carrier concentration: 3/2
3/4 /2
2
12
2gE
i i e hn p m m e
Carrier compensation: n+p is reduced by increasing either n or p through doping.
3/2
22
2c iEe
i
mn e
Pure sample:
→
3/2
22
2i vEh
i
mp e
3/2
2 c vi E Eh
e
me e
m
1 3ln
2 4h
i c v Be
mE E k T
m
Intrinsic Mobility
v EMobility μ of single type of carriers:
0
e hne pe
Electrical conductivity σ of semiconductor:
ee
e
e
m
hh
h
e
m
q
m
E
T /2gE
i in p e μh < μe due to interband scattering
Ionic crystals:h moves by hopping.
Self-trapped via Jahn-Teller effect
Eg small → m* small→ μ large, esp D-G
Impurity Conductivity
• Donor States
• Acceptor States
• Thermal Ionization of Donors and Acceptors
Stoichiometric deficiency → Deficit semiconductorsImpurities → Doped semiconductors
e.g., 10–5 B → σ = 103 σi for Si at 300K
Donor States
Donor = Impurity atom that tends to give up an electron
Bohr model:4
2 22e
d
e mE
2
13.6 emeV
m
Bohr radius:
2
2de
am e
0.53e
mA
m
Valid when ad >> atomic distance.& Ed << Eg .
Anisotropy need be considered for Si & Ge
III IV V VI
B C N O
Al Si P S
Ga Ge As Se
In Sn Sb Te
Tl Pb Bi Po
20 29.8
5 9.05
isotropic anisotropic
Bohr model
30
80
da A
Si
Ge
Impurity band formed at low impurity concentrations.Mott (metal-insulator) transition.
Conduction in impurity band is by hopping. Occurs at lower concentration in compensated materials.
300 26Bk K meV
Acceptor StatesAcceptor = Impurity atom that tends to capture an electron
III IV V VI
B C N O
Al Si P S
Ga Ge As Se
In Sn Sb Te
Tl Pb Bi Po
Complication:VB degeneracy.
Ultra pure Ge:imp conc < 10–11
active impurities ~ 21010 cm−3
intrinicregion
Electrically inactive impurities in Ge: H, O, Si, C.Can’t be reduced below 1012 – 1014 cm–3 .
13 31.7 10in cm at T = 300K with ρi 43 Ω cm
Thermal Ionization of Donors and Acceptors
/20
dEdn n N e
1dE
3/2
0 22
2h Bm k T
p
/20
aEap p N e
3/2
0 22
2e Bm k T
n
No acceptors present:
1aE
0
c iEin n e
D e D
0dEd
d
n Nn e
N
0
cEn n e
Reminder:
Extrinsic region:
2in p n e h
Thermoelectric Effects
Electrical conductivity: q J E=0T 2
q
q
n q
m
Thermal conductivity: Q T J0q J2 2
3q B
q
n k T
m
Seebeck effect: S T E=
Peltier effect: Q qJ J0T
0q J S = Seebeck coeff.(Thermal power)
b = carrier mobility
qB
B
k T
q k T
cq
v
E efor
E h
q qn q b
Π = Peltier coeff.
Heat current density JQ :
i ii
dU dQ Y dx dN → U Q N J J J Steady state
Q NU J J qq Bk T
q
J
NU J
→
2
ST Kelvin relation(derived from thermodynamics)
2 2
23Bk
Tq
B AQ I
Thermoelectric Effects: Boltzmann Eq Ref: Haug, IV.B.Kittel, App F
Boltzmann eq.: d ff
dt r pv F
C
f
t
1 p k
1E kv
0
C
f ff
t
Relaxation time
approximation
Linearization: 0
d ff
dt r pv F
C
f
t
00
ff E
E
k k0f
E
v
00
ff T
T
r r
2
1
E
E
Ee
T TT
e
r
0
1
1Ef
e
0f ET
E T T
r
Ee semicond
metals
0f
t
A-current density:
3
0322
A
df f A
kJ v 02 dE E f f A v
ET
T T
rv F
A-current density:
3
0322
A
df f A
kJ v
30
322
fdA
E
kv
02f E
dE E A TE T T
rv v F
20/ /2 j
j
fK dE E E v
E
For isotropic materials, JA is a linear combination of integrals
00
ff f
E
E
0
C
fE fT
T T E t
rv F 0f f
0f
E
1 00
q qq
d K K dTJ q K q
d z T d z
E
2
2 1 01 0
2q q qQ q
d K K K dTJ K K q
d z T d z
E
1 0
20 0
1q q qJ K K ddT
q K qK T d z q d z
E
21 0 1 0 2
0 0
qQ q
K K K K K dTJ J
qK K T d z
→
Electrical conductivity: qJ E0T 20q K
Thermal conductivity: q
dTJ
d z0qJ
20 2 1
0
K K K
K T
Seebeck effect:dT
Sd z
E= 1 0
0
qK KS
qK T
Peltier effect: Q qJ J0T
ST
0qJ Seebeck coeff.(Thermal power)
1 0
0
qK K
qK
Kelvin relation(derived from thermodynamics)
For spherical energy surfaces: ( 1)!
jqj B
n bK j k T
q b = carrier
mobility 2 qB
B
k T
q k T
cq
v
E efor
E h
02 ln qB
q
nk T
q n
Peltier coefficent of Si
Semimetals
2 Group V atoms in primitive cell→ insulator
Band overlap→ semimetal
SuperlatticesSuperlattice: lattice with long period created by stacking layers of atoms.
Ref: J.Singh,”Physics of Semiconductors & Their Heterostructures”
(GaAs)1 (InAs)1
(GaAs)2 (InAs)2
Bloch Oscillator
Bloch Oscillator:For a collisionless electron accelerated across a Brillouin zone, the motion is periodic.
2G
A
e T E A = superlattice constant along
2B
e A
T
E Bloch frequency
Simple TBM: 0 1 cosk kA
1 dv
d k
0 sin
AkA
z dt v dtdk v
d k 0
0
sink A
dk kAe
E
d ke
dt E
0 cos 1kAe
E0 cos 1
e At
e
EE
0 0z
Zener Tunneling (field-induced interband tunneling):
Tilting of band by
→ different bands at same ε
→ Zener tunneling (breakdown)
Heavily doped p-n junction
Strong reverse bias→ Zener breakdown
I-V curve