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    2002 Fairchild Semiconductor Corporation Application Note 7507 Rev. A1

    SP600 and SP601 an HVIC MOSFET/IGT Driverfor Half-Bridge Topologies

    The interfacing of low-level logic to power half-bridge config-

    urations can be accomplished by an 500VDCintelligent IC,

    the SP600 series driver, which is designed for up to 230VAC

    line rectified operation. The primary function of the high volt-age integrated circuit (HVIC) is to drive n-channel MOS

    gated power devices in totem pole configuration. Compatible

    with current-sensing MOSFETs/IGTs, this HVIC provides

    overcurrent shutdown, simultaneous conduction protection,

    and undervoltage lockout. Logic level inputs provide noise

    immune control of power element switching.

    The SP600 has demonstrated high frequency (130kHz)

    operation as well as the ability to withstand high dv/dt. Its

    semicustom design flexibility makes it easily adaptable to a

    wide range of single and multiple phase applications. Other

    salient features of the device are described below.

    Technology Overview

    BiMOS structures are implemented in a junction-isolation

    process, known as lateral charge control,1 that supports

    high voltage laterally. By the use of this thin epi process, low

    voltage analog and digital circuitry can be combined mono-

    lithically with high voltage transistors. Low voltage circuits

    can be constructed to float up to 500VDCwith respect to the

    substrate. Additionally, 500VDCNMOS and n-p-n transistors

    can also be fabricated.2 Since this process conforms to

    mainstream low voltage IC manufacturing, it is cost effective.

    Totem Pole Drivers

    Historically, designers have been faced with awkward deci-

    sions regarding the upper-rail drive of bridge topologies.

    P-channel MOSFETs, while easy to drive, are more than

    twice as expensive as equivalent n-channel devices having

    the same rds(on). Economic barriers and product availability

    generally prohibit design beyond 200VDC. On the other

    hand, the driving of upper rail n-channel MOS gated devices

    requires a floating gate supply that must be 5 to 20VDCgreater than the upper rail link. While several discrete

    approaches for implementing this floating supply are known,

    the designer is burdened with additional components and

    potential dv/dt problems associated with voltage translation.

    The SP600 series driver provides the economical solution as

    an intelligent totem pole n-channel driver. With the addition

    of as few as five, user defined, external, passive components

    (three if current detection isnt employed) a functional half-bridge driver can be built that has the following features:

    Creation and management of a 15VDCupper-rail power

    supply

    Ability to interface and drive standard and current sensing

    n-channel MOSFETs/IGTs

    Shoot-through protection

    Overcurrent protection

    Undervoltage lockout

    CMOS logic-level input compatibility

    Semicustom flexibility through metal-mask changes

    Standard 22-pin DIP packaging

    Theory of Operation

    Figure 1 is the basic block diagram of the SP600. CMOS

    logic compatible input signals are filtered to ensure reliable

    operation when the device is subjected to noisy industrial

    environments. Digital commands at TOP and BOTTOM

    inputs cause the upper or lower drivers, respectively, to turn

    on or off. The ITRIP SELECT input provides a higher than

    nominal current limit on a pulse-by-pulse basis. The input

    signals are decoded to drive the appropriate output device.High voltage translation is provided by current mirror pulses

    used to communicate upward to the top gate driver to initiate

    turn on or off (ION/IOFF pulses). These momentary pulses

    are captured by local latches to maintain the desired state.

    This feature minimizes power dissipation in the level shifter

    and provides added noise immunity as well. The bottom gate

    driver circuitry is similar. The floating bootstrap power supply

    is provided by low voltage capacitor CF and high voltage

    diode DF. Each time the VOUTnode goes low, CFcharges to

    roughly a diode drop less than VDD(15VDC). This situation

    prevails each time the lower output device is activated or, in

    the case of an inductive load, whenever the upper device is

    switched off and freewheeling load current forces the output

    node to a diode drop below ground. In either case, DFis for-ward biased, allowing CFto charge through the current limit-

    ing resistor RBS to approximately VDD. Noise dropping

    resistor RND, along with capacitor CDD, provides localized

    filtering of the bias supply and bypasses bias supply series

    inductance facilitating fast and complete bootstrap refresh.

    Each output device is protected on a pulse-by-pulse basis

    from overcurrent (OC) by sense resistor RS, which is con-

    nected to 100mV comparators. This arrangement permits

    the designer to take advantage of nearly lossless current-

    sensing MOSFETs or IGTs.

    Upon detection of any OC, the output is immediately dis-

    abled. In the case of the lower switch, a FAULT is directly

    detected and reported. Upper rail OC FAULTs are indirectly

    reported via the output voltage monitor when it detects an

    output state not in agreement with the commanded TOP

    input signal. With local OC detection and shutdown of the

    upper device, an inductive load will force VOUT low due to

    freewheeling. This out of status detector recognizes a fault

    when VOUTis typically less than 5.5VDC.

    Application Note Apri l 1997 AN-7507

    Author: Dean F. Henderson

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    2002 Fairchild Semiconductor Corporation Application Note 7507 Rev. A1

    FIGURE 1. BLOCK DIAGRAM OF THE HVIC

    FIGURE 2. FUNCTIONAL DIAGRAM OF THE HVIC

    Logic and Timing

    Figure 2 is a detailed functional circuit of the SP600. The fil-

    tered inputs, TOP, BOTTOM, and ITRIP SELECT, ignore pulse

    widths less than typically 400ns to prevent false triggering.

    During the generation of ION and IOFF pulses, the control

    logic ignores further changes in the input signal. For each

    IONpulse, an IOFFpulse is simultaneously sent to the oppo-

    site driver, thus eliminating the possibility of spurious shoot

    through caused by high voltage, high-speed switching.

    These features aid in providing predictable operation of the

    floating upper rail driver section, which is capable of slewing

    over 10,000 volts per s.

    +15VBIAS

    VDD

    CDD

    TOP

    BOTTOM

    I TRIP SELECT

    FAULTHVIC

    FILTER

    RND RBS

    ION IOFF

    F

    CF

    RS

    +VDC

    VOUT

    RS

    FILTER

    CMOS TIMINGCONTROL LOGIC& PHASE STATUS

    BOTTOMGATE

    DRIVER

    TOPGATE

    DRIVER

    OUTPUT VOLTAGEDETECTOR

    CMOSTIMING

    ANDCONTROL

    VOUTSENSE &FILTER UV

    LOCK-OUT

    FILTER

    QR

    S

    VBIAS

    VDD

    VDF

    RND

    RBS

    TOP

    BOTTOM

    FAULT

    ITRIPSEL

    1

    2

    3

    4

    11

    22

    21

    10

    3.5

    750

    RF

    ITRIPSEL

    FAULT

    ITRIPSEL

    ION B

    IOFF B

    UVLOCK-OUT

    LEVELSHIFT

    QR

    S

    QR

    S

    QR

    S

    QR

    S

    +

    -

    +

    -

    12

    19

    18

    17

    15

    16

    14

    13

    10

    9

    8

    6

    7

    5

    VBS

    D1U

    G1U

    G2U

    UPPER

    TRIPU

    CL2

    PHASE

    VOUT

    D1L

    G1L

    G2L

    LOWER

    TRIPL

    CL1

    VSS

    RO

    3.5

    Application Note 7507

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    2002 Fairchild Semiconductor Corporation Application Note 7507 Rev. A1

    PHASE serves as a common reference for the floating boot-

    strap supply (VBS) and all upper rail logic. VOUT, for all prac-

    tical purposes, is at the same potential as PHASE, being

    separated from it electrically by only a few (RO). This addi-

    tional series output resistance helps to limit the peak current

    being drawn from the HVIC when an external lower flyback

    diode, undergoing forward recovery, forces VOUTnegative.

    An automatic refresh algorithm is generated by the CMOS

    timing and control block to ensure that the bootstrap capaci-

    tor remains charged. As mentioned above, CF is refreshed

    each time the VOUTnode swings to common. At power up,

    with zero voltage on CF, there are two ways to refresh the

    bootstrap capacitor. The first is by initially commanding the

    bottom device to turn on, forcing VOUT low. The second

    occurs when an automatic refresh is invoked if the TOP has

    been commanded on for longer than 200s to 500s. The

    logic momentarily ignores the inputs, and turns on the lower

    output (subsequent to an IOFF TOP) for typically 2.0s,

    charges CF and finally restores control to the input com-

    mands. Automatic refresh is overridden at switching rates

    greater than 5kHz, the minimum refresh timer period.

    A dual level current limit provision allows for a 30% highercurrent trip point (above nominal) on a pulse-by-pulse basis.

    A logic level 1 applied to ITRIP SELECTprovides a boosted

    current limit suited for applications like uninterruptable power

    supplies (UPS), which may have occasional shifted peak

    power requirements. This feature may allow for a more opti-

    mally selected output device. Benefits of current boost have

    been demonstrated in an off-line PWM motor controller

    where ITRIP SELECTis momentarily applied to overcome the

    inertia associated with rotor start-up.3

    Both outputs are disabled and a FAULT reported as a result of:

    Overcurrent

    VDD(lower bias) and VBS(upper bias) undervoltage

    VOUT/PHASE out-of-status

    Simultaneously commanded TOP and BOTTOM input

    (outputs disabled, no FAULT reported)

    The fault can be cleared by a logic 0 at both TOP and

    BOTTOM inputs for the required fault reset delay time of

    3.4s to 6.6s.

    Power Driver Section

    The upper and lower driver output sections are nearly identi-

    cal, Figure 3.4Separate sink and source transistors are sep-

    arately bonded out for application specific designs requiring

    additional series gate impedance(s) for slower charge anddischarge rates. This circuit property becomes particularly

    important with IGTs, where a minimum turn-off impedance of

    100may be required to ensure full SOA. Regardless of the

    switching element used, companion flyback diode character-

    istics may necessitate slower turn-on to reduce peak reverse

    recovery current by increasing the gate impedance by

    means of RCHARGE.

    A nominal 100mVDCcomparator provides overcurrent (OC)

    protection when used with either current sensing IGTs or

    MOSFETS. OC can also be implemented by using low

    impedance shunts with noncurrent sensing power output

    devices, Figure 4.

    Clamp CL1 in Figure 4 provides overvoltage protection for cur-rent sensing structures during switching intervals, and pro-

    tects the comparator from any voltage transients due to

    external lead inductances. To avoid nuisance OC trips caused

    by reverse recovery current during turn-on transitions, the

    comparators output is blanked for approximately 3s.

    System Performance

    The half-bridge test circuit in Figure 5 was built to demon-

    strate the SP600 as a high frequency driver of MOSFETs.

    The load is referenced to one-half the battery voltage, allow-

    ing bidirectional load current. This circuit characteristic emu-

    lates power configurations of half bridges with split supply or

    full bridges implemented with multiple HVICs.

    For ultimate switching speed, no additional series gate

    impedances were used. Peak MOSFET gate charge and dis-

    charge current waveforms of 400 and 510mADC, respec-

    tively, were observed, Figure 6.

    FIGURE 3. POWER-OUTPUT SECTION INTERFACING WITH CURRENT SENSING MOSFET OF IGT

    UVLOCK-OUT

    VDD

    FAULT

    ITRIPSEL

    QR

    S

    QR

    SION B

    IOFF B

    10

    9

    8

    6

    7

    5VSS

    D1L

    G1L

    G2L

    TRIPL

    CL1

    +

    -

    RCHARGE

    RDISCHARGE

    RSENSE

    Application Note 7507

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    2002 Fairchild Semiconductor Corporation Application Note 7507 Rev. A1

    FIGURE 4. POWER OUTPUT SECTION INTERFACING WITH NONCURRENT SENSING MOSFET OR IGT.

    FIGURE 5. HALF-BRIDGE TEST CIRCUIT

    High frequency, high voltage operation requires that upper

    rail drive and level translator circuitry be immune to high

    dv/dt, as this section floats with respect to VOUT/PHASE.Interjunction capacitance can dynamically inject displace-

    ment currents, raising havoc in circuit performance or even

    causing catastrophic failures, including the breakdown of

    voltage isolation tubs or latch-up in adjacent four layer

    structures.

    At rail voltages of 200VDC to 400VDC, rise and fall transi-

    tions of VOUT/PHASE were measured in the 20ns to 35ns

    region. The HVIC operated flawlessly while being subjected

    to output swings beyond 11,000V per s. Figure 7 demon-

    strates the HVICs ability to sustain such dv/dt when driving

    IRF820 devices.

    IRF 842s were driven at 130kHz in this same half-bridge cir-

    cuit, Figure 8. The ultimate switching speed of the SP600

    series HVIC will depend on gate capacitance and the duty

    cycle limits dictated by the minimum IONand IOFFtimes. A

    minimum IONtime (1.6s to 3.1s) ensures time for refresh,

    while a minimum IOFFtime (1.3s to 3.4s) prevents simul-

    taneous conduction by allowing for gate discharge prior to an

    opposite ION pulse. The same promising technology has

    been shown to operate a half-bridge resonant converter at

    frequencies up to 600kHz.6

    UVLOCK-OUT

    VDD

    FAULT

    ITRIPSEL

    QR

    S

    QR

    SION B

    IOFF B

    10

    9

    8

    6

    7

    5VSS

    D1L

    G1L

    G2L

    TRIPL

    CL1

    +

    -

    RCHARGE

    RDISCHARGE

    RSHUNT

    ILOAD

    LOAD

    VBSVDF

    DF

    VBIAS

    VDD

    FAULT

    TOP BOT

    TRIPL

    COM

    G2L

    G1L

    D1L

    TRIPU

    VOUT

    PHASE

    G2U

    G1U

    D1U

    SP600HVIC

    3.3

    15V

    33

    K

    0.22

    CF

    2200

    2200

    30-500VDC

    Application Note 7507

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    2002 Fairchild Semiconductor Corporation Application Note 7507 Rev. A1

    FIGURE 6. GATE-CURRENT WAVEFORMS DRIVING AN IRF820

    FIGURE 7. VOUTTRANSITION AT TURN ON OF LOWER IRF820

    FIGURE 8. OUTPUT LOAD CURRENT AT 130kHz USING

    IRF842s

    Semicustom Capability

    The SP600 family can be customized by inexpensive, final

    metal mask alterations. Application specific designs are pos-

    sible for variations in the following parameters:

    Minimum ION/IOFFpulses

    OC trip response time

    Input signal conditioning filters

    OC trip level

    Inclusion of RCHARGE/DISCHARGE

    ITRIP SELECTboost level

    FAULT reset timer

    Other system related options include:

    Input protocol

    Automatic FAULT reset

    Ability to disable the automatic refresh algorithm

    References

    1. E. J. Wildi, et al, New High Voltage IC Technology, IEDM

    84 Conference proc, pp 262-265.

    2. E. J. Wildi, et al, 500V BiMOS Technology and its Appli-

    cations, Electro 85 paper #24/2.

    3. J. G. Mansmann, et al, ASIC Like HVIC for Interfacing to

    Half-Bridge Based Power Circuits, PESC March 88.

    4. J. G. Mansmann, et al A Flexible High Voltage Controller

    Core for Half He N-Channel Bridge Operation, MOTOR-

    CON proc, Sept 87, pp 194-205.

    5. D. J. MacIntyre, Motor Control Applications of Second

    Generation IGT Power Transistors, GE PESD Application

    Note 200.95.

    6. R. L. Steigerwald, et al, A High-Voltage Integrated Circuit

    for Power Supply Applications, APEC proc, Mar 87, pp

    221-229.

    Appendix

    Timing Waveforms

    Although both SP600 and SP601 timing diagrams are shown

    the SP601 was chosen to provide further explanation.

    Top: Turn Off Vertical: 100mA/div

    Bottom: Turn On Horizontal: 20ns/div

    Vertical: 50V/div

    Horizontal: 50ns/div

    Vertical: 50V/div

    Horizontal: 50ns/div

    0

    0

    0

    0

    Application Note 7507

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    2002 Fairchild Semiconductor Corporation Application Note 7507 Rev. A1

    SP600 Series Timing Diagram

    t0< t < t1 At t0, with the enable high, the outputs are simultaneouslycommanded to switch from lower to upper which is also

    known as Bistate operation. After delay tOFFD, the lower is

    turned off, followed by the uppers turned on. Dead time, tD.T.,

    the difference between the lower off transition to the upper

    on transition is internally set. Since this timing sets the mar-

    gin of safety for simultaneous conduction, its the users re-

    sponsibility to ensure that proper external gate impedance is

    selected to ensure ample time for power transistor charg-

    ing/discharging.t1< t < t2 The lower is turned on at t1and continues for a relatively long

    period, long enough that at t2an automatic refresh will be in-

    voked.

    t2< t < t3 The HVIC has blinded itself to the logic inputs during this re-fresh mode. The upper is turned off, with its associated turn

    off delay, tOFFD. After the fixed dead time, tD.T., the lower is

    briefly turned on, ton, providing a charge refresh path for the

    bootstrap capacitor, CF. Once again the dead time is ob-

    served before turning the upper back on again and restoring

    control to the user inputs. This refresh cycle can be detected

    as a few s wide pulse of lower MOSFET/ IGT current.

    t3< t < t5 The upper remains commanded on for a per iod of time lessthan tREF. At t4, the UP/DOWN time is brought low, com-

    manding a lower turn on. Similar to the t0-t1interval, the up-

    per turns off after delay tOFFDand the lower turns on afterthe dead time, tD.T.

    t5< t < t7 The SP601 is disabled by the ENABLE line low at t5. Previ-ously conducting lower turns off after its delay, tOFFD. Since

    the ENABLE line was previously brought low and neither out-

    put transistors are conducting, termed as three-state mode.

    The state of the output phase waveform remains unknown.

    At t6, the ENABLE is once again pulled high. The lower turns

    on after delay, tONDB.

    t7< t < t9 At t7, the SP601 is disabled and the UP/ DOWN line is toggledto the upper position. The lower turns off and the power devic-

    es go into a three-state mode. At t8, upper turn on sequence

    begins. Since the auto one shot hasnt timed out yet, the turn

    on delay, tONDB, is relatively short.

    t9< t < t11 The chip shuts off as the ENABLE line is brought low at t9,and is enabled again at t10as the UP/DOWN line had re-

    mained high. Since the disable period was long and the re-

    fresh one shot had timed out, the turn on delay, tONDT, is

    slow. Keep in mind that the delay time includes the time forautomatic refresh. In an attempt to not further complicate the

    drawing, the detailed refresh cycle isnt actually shown.

    t11< t < t13 Both inputs are brought low at t11for a duration longer than

    tREF. At t13the ENABLE is restored, initiating the turn on se-

    quence for the lower. This follows a long period of time where

    the one shot had timed out, but in this case the lower is com-

    manded on. Since it doesnt need the refresh algorithm, the

    turn on delay, tONDB, is fast.

    t11< t < t13 This sequence of events depicts the detection of a lower over-current trip. Between t13-t14, the lower is on. Beyond the filter

    delay, tOFFTN, the overcurrent trip shuts off the lower driver. A

    fraction of a s later, tFN, the flag report delay, FAULT goes low.

    t15< t < t16t18< t < t19

    By holding both ENABLE and UP/DOWN lines low for the re-

    quired fault filter reset time, tR.T., the fault is cleared.

    t16< t < t17 The upper is turned on and an overcurrent trip begins. Beyondthe filter delay, tOFFTN, the overcurrent comparator shuts off the

    upper drive at t17. Since the control logic can only communicate

    upwards, there is no direct means of reporting an upper trip. As

    the fault has been remotely captured by the floating upper sec-

    tion, shutdown has occurred. The Phase or VOUT node will

    quickly fall to a diode drop below common due to inductive fly-

    back current. Via the VOUT/VPHASEmonitor this is detected as

    not being in agreement with the commanded input and reports

    the fault. Reporting this phase out of status delay is tOSVF.

    INTERVAL

    TOP

    BOTTOM

    ENABLE

    UP/DOWN

    FAULT

    LOWER

    TRIPL

    UPPER

    TRIPU

    PHASE+HV

    COM

    SP600

    SP601

    t0

    tREF

    tD.T.

    tOFFD

    t1 t2 t3 t4 t5t6 t7 t8 t9 t10 t11 t12 t13

    1

    0

    1

    0

    1

    0

    1

    0

    1

    0

    1

    0

    t14 t15t16 t17 t18 t19

    1

    0

    1

    0

    1

    0

    tD.T.

    tON

    tD.T. tONDB

    tOFFD

    tOFFD

    tOFFD

    tONDT tOFFD

    tONDT

    tOFFD

    tONDB

    tON tOFFTN

    tOSVF

    tOFFTNtONDB

    tFN

    tONDB

    tR.T. tR.T.

    t>tREF

    t>tREF

    ttREFt>tREF

    t0 t1 t2 t3 t4 t5t6 t7 t8 t9 t10 t11 t12 t13 t14 t15t16 t17 t18 t19

    Application Note 7507

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