coolmos, your choice for led/lcd tv - infineon.com your choice for led/lcd tv jimmy wang ... b ac...
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CoolMOS, Your Choice for LED/LCD TV
Jimmy Wang(王 进) System application engineer Infineon Technologies China Jimmy.wang@infineon.com
Copyright © Infineon Technologies 2010. All rights reserved.
Bridge
rectifier
Line
filter
ACPFC
Converter
Boost
Multi converter
QR/FF Flyback
Standby
converter
FF Flyback
High voltage
inverter
12V/18V/30V
System and
control
5V
Standby
Bridge
rectifier
Line
filter
ACPFC
Converter
Boost
Main converter
LLC HB
QR Flyback
Standby
converter
QR/FF Flyback
Low voltage
inverter
12V/18V/30V
System and
control
5V
Standby
LCD TV SMPS Structures: PSU and LIPS
PSU
type
LIP
S t
ype
Copyright © Infineon Technologies 2010. All rights reserved.
Screen
size
20”
100W
200W
300W
23” 26” 27” 32” 37” 40” 42” 47” 50”
LCD TV SMPS: Topology / Power v.s Screen Size
PSU with QR
PSU with LLC HB
LIPS
PSU types
LIPS types
Output
power
CCM
PFC/
Inte
rleaved D
CM
PFC
DCM
PFC
Copyright © Infineon Technologies 2010. All rights reserved.
600V CoolMOSTM
C3/CP
500V CoolMOSTM
C3/CP
Eg.
IPA60R199CP
SPA20N60C3
FF CoolSET
QR CoolSET
8 pin LLC
ICE1HS01G
SiC diode
Eg.
IDT02S60C
IDH02SG60C
PFC Controllers
Eg.
ICE2PCS0X
TDA4863-2PFC
controller
EMI
filter
Half-bridge
controller
5V output
Standby &
Microcontroller
600V CoolMOSTM
C3/CP
500V CoolMOSTM
C3/CP
Eg. SPA07N60C3
IPA50R385CP
AC
PFC pre-regulator
Boost converter
Standby converter
FF flyback converter
Main converter
LLC HB resonant converter
24V output
Backlight Inverter
12V output
System & Audio
controller
LCD TV SMPS: PSU with LLC HB
600V CoolMOS C6/E6/CFD2 IPA60R190E6 IPP65R190CFD
600V CoolMOS C6/E6 IPA60R190E6
CoolMOS
Your choice
Copyright © Infineon Technologies 2010. All rights reserved.
LCD TV SMPS: LIPS (HV inverter+Multi+Standby)
600V CoolMOSTM
C3/CP
500V CoolMOSTM
C3/CP
Eg.
IPA60R399CP
IPA50R385CP
600V CoolMOSTM
C3/CP
500V CoolMOSTM
C3/CP
Eg.
IPA60R199CP
SPA20N60C3
SiC diode
Eg.
IDT02S60C
IDH02SG60C
PFC Controllers
Eg.
ICE2PCS01/02
ICE2PCS03/04PFC
controller
EMI
filter
12V/18V for
systerm & Audio
5V for
Standby &
Microcontroller
AC
PFC pre-regulator
Boost converter
Output to Lamps
High voltage inverters
HB resonant inverter
Multi+ Standby converter
FF CoolSET
600V CoolMOSTM
C3/CP
800V CoolMOSTM
C3
Eg.
IPA60R299CP
SPA11N80C3
QR/FF PWM IC
Eg.
ICE2QS01
ICE2QS03G
QR flyback
controllers
Multi+ Standby converter
QR CoolSET
FF CoolSET
12V/18V for
systerm & Audio
5V for
Standby &
MicrocontrollerOR
FF CoolSET new Series F3R
Eg. ICE3BR2565JF
ICE3BR1065JF
12
34
56
Drain
CS
BA
VCC
GND
FB
12
34
56
Drain
CS
BA
VCC
GND
FB
600V CoolMOS C6/E6 IPA60R190E6
600V CoolMOS C6/E6 800V CoolMOS C3 IPA60R190E6
600V CoolMOS C6/E6/CFD2 IPA60R190E6 IPP65R190CFD
CoolMOS
Your choice
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21 21.10.2011
CoolMOSTM – Technology leader in high voltage MOSFETs
High voltage MOSFET in 500V,
600V, 650V, 800V, and 900V
Offers a significant reduction of
conduction and switching losses
Enables high power density and
efficiency for superior power
conversion systems
Best-in-class price/performance
ratio
A Short Description of CoolMOS™
0
5
10
15
20
25
30
400 500 600 700 800 900 1000
New horizons
for high voltage
applications
Standard MOSFET
Ron x A ~ V(BR)DSS2,4...2,6
CoolMOSTM
Fig.: A near-linear relationship between Rds(on) and V(BR)DSS indicates the significant difference between CoolMOS and conventional MOSFET
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
What is CoolMOS™ Technology
On state:
Reduction of resistance of epitaxial layer by high doped n-columns
Higher doping level in n-type drift region results in lower Rds(on)
Blocking state:
Compensation of additional charge by adjacent p-columns
Half of active chip area is covered by p-columns
During blocking state the p-column compensates the charge of the adjacent n-column resulting in high breakdown voltage at an area specific on-resistance below the silicon limit!
Source
Gate
Drain n+
n+
p+
nepi
Standard MOSFET
Source
Gate
Drain n+
n+
p+
pnepi
CoolMOS™
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21 21.10.2011
History of CoolMOS™ Product Portfolio from S5 to C6/E6 & CFD2 S5 series: the first series of CoolMOS™, market entry in 1998 slow switching, close to
conventional MOSFET, Vth 4.5 V, Gfs low, Rg high design-in in high power SMPS only
C3 series: the third series of CoolMOS™, market entry in 2001 the „working horse“ of the
portfolio, fast switching, symmetrical rise/fall time @10 V Vgs, Vth 3 V, Rg very low design-in
into all CoolMOS™ segments
CFD series: the fourth series of CoolMOS™, market entry in 2004, fast body diode, Qrr 1/10th
of C3 series, Vth 4 V, Rg low specific for phase-shift ZVS and DC/AC power applications
CP series: the fifth series of CoolMOS™, market entry in 2005, ultra low Rdson, ultra low gate
charge, very fast switching Vth 3 V, internal Rg very low
C6/E6 series: launched in 2009 and 2010 respectively as the sixth CoolMOS™ technology is
planned to be the successor of C3
CFD2 series: the first 650 V superjunction technology with integrated fast body diode on the
market and also is planned to be the successor of CFD
CoolMOS™ product portfolio
CoolMOS™ is successful in the market since 1998 and created a high quality customer perception
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011
600V CoolMOSTM C6/E6 - Introduction
CoolMOSTM C6/E6 is the sixth generation of Infineon high voltage power MOSFET´s designed according to the superjunction (SJ) principle
The new 600V C6/E6 portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
Features: - fast and easy control of switching behavior - high ruggedness in hard commutation of body diode - reduced energy stored in output capacitance (Eoss) - low area specific on-state resistance (Ron*A) - low gate current requirement
Benefits: - fast and easy design-in, less care for peak current conditions, e.g. start-up, load jump - proven CoolMOS™ quality combined with high body diode ruggedness guarantee outstanding reliability - better light load efficiency compared to C3
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
How to achieve self-limiting di/dt and dv/dt characteristics in C6?
C6 comes with an integrated gate resistor to provide self-limiting behavior.
Benefit of using integrated gate resistor:
allows fast turn on and turn off at normal operating current conditions
limits the di/dt and dv/dt in case of peak current conditions.
relatively low gate driver current.
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011
Switching behavior CoolMOS™ C6/E6……(cont)
cds
cgd
cgs
Ld
Ls
Lg Rg
MOSFET equivalent circuit model
Key requirement to reach ease of use
Similar cgd value of C3
Internal gate resistor (Rg) integration in the die.
Features of internal gate resistor:
Stable switching behavior
Self-limit di/dt and dv/dt
Comparable switching loss to C3
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011 2011/10/21
Turn on and turn off behavior CoolMOSTM C6
C6: smooth waveforms
190 mohm parts, 16A, Rg 1.8 ohm, 125°C
Gate
Vds
Id
C6: smooth waveforms disappearing Miller plateau due to integrated Rg
Vds
Gate
Id
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011 2011/10/21
0
10
20
30
40
50
60
70
0 5 10 15 20 25
Current IDS [A]
turn
off
, d
v/d
t [V
/ns]
Rg 1.8 Ohm Rg 3.3 Ohm
Rg 6.8 Ohm Rg 13 Ohm
Rg 18 Ohm Rg 33 Ohm
CoolMOSTM C6 does NOT show excessive dv/dt or di/dt! VDS=400V, Tj=125°C, RDSon=190 mohm; Turn Off
C6 di/dt C6 dv/dt
0
100
200
300
400
500
600
700
800
900
1000
0 5 10 15 20 25
Current IDS [A]
turn
off
, d
i/d
t [A
/µs]
Rg 1.8 Ohm Rg 3.3 Ohm
Rg 6.8 Ohm Rg 13 Ohm
Rg 18 Ohm Rg 33 Ohm
C6 self-limits di/dt and dv/dt to less than 65V/ns and less than 1000A/µs Ease of Use for CoolMOS C6 even in parasitic layout environment.
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011 2011/10/21
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25
Current IDS [A]
turn
on
, d
v/d
t [V
/ns]
Rg 1.8 Ohm Rg 3.3 Ohm
Rg 6.8 Ohm Rg 13 Ohm
Rg 18 Ohm Rg 33 Ohm
0
500
1000
1500
2000
2500
0 5 10 15 20 25
Current IDS [A]
turn
on
, d
i/d
t [A
/µs]
Rg 1.8 Ohm Rg 3.3 Ohm
Rg 6.8 Ohm Rg 13 Ohm
Rg 18 Ohm Rg 33 Ohm
Similar self-limiting behavior of C6 at turn on as well… VDS=400V, Tj=125°C, RDSon=190 mOhm
Similar friendly behavior for C6 at turn on, no increase of di/dt and dv/dt at peak current conditions!
C6 di/dt C6 dv/dt
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
External on-board
coupling capacitance
Cgd-ext
Cgs
Cds
Cgd
Rg ext Rg int G
D
S
Resonant
circuit
Lead
inductance
Lead + gate wire
inductance
dv/dt triggered
oscillations
Resonant
circuit
di/dt triggered
oscillations
Disassembling a MOSFET package parasitics – TO-220
Parasitic L C influence at high dv/dt and di/dt !
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011
Basic of LLC operation: hard commutation
High side switch is turned on.
the network will be charged up.
High side switch is turned off.
current will be circulating in the freewheeling (network and Low side switch diode)
When the current still circulating, the high Side Switch is turned on. (this is abnormal operation in LLC topology)
the hard commutation is occurred.
Step into hard commutation on body diode Low side Switch
Resonant
network
or
load
network
LLd
LLd
LLs
LsPCB
LsPCB
LLs
Vb
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011
Basic of LLC operation: hard commutation
Possibility of hard commutation in LLC topology:
1. Start up.
2. No load.
3. Jump load.
4. Output short circuit.
At these abnormal conditions, LLC controllers will increase their switching frequency to keep a low voltage conversion ratio. It may cause hard commutation situation in the power switches.
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
Potential risk
MOSFETs Soft-Switching
Completely
Body Diodes do not turn off completely The un-reverse recovery charge triggers the intrinsic BJT of MOSFETs
Light Load
Full Load
I II
MOSFETs ZVS ON Body diode off completely?
MOSFET Failure in ZVS
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
Diode ON
MOSFET OFF
Diode ON
MOSFET ON
Diode OFF ?
MOSFET ON
Diode OFF
MOSFET OFF
Insufficient voltage (RDS,on×ID) (electrical field) can’t turn OFF the body diode completely
Condition I light load
The un-recovery charge of diode will trigger the intrinsic BJT as MOSFET turn off
Exceed a critical load, the current of resonant inductor can keep body diode ON –further ZVS ON
light load condition
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
Un-Completely Reverse Recovery MOSFET
Under specified current level, the body diode is un-completely reverse recovery
Voltage/current rining
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
Above Specified Load
Diode ON
MOSFET OFF
Diode ON
MOSFET ON
Diode OFF
MOSFET ON
Diode OFF
MOSFET OFF
Exceed a critical load, the current of resonant inductor can keep body diode ON -ZVS ON Sufficient voltage (RDS,on×ID) (electrical field) can turn off the body diode completely
Condition II Above specified load
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
Completely Reverse Recovery MOSFET
Above specified current level, the body diode is completely reverse recovery
No voltage, no current rining
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011
Hard commutation of body diode: C6 shows less reverse recovery charge than C3 and better softness than CFD
-30
-20
-10
0
10
20
30
40
0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1
Time [µs]
Cu
rre
nt
IDS
[A
]
SPP20N60C3
SPP20N60CFD
IPP60R200C6
Qrr C3 = 9.6µC trr C3 = 510ns
Qrr C6 = 7.1µC trr C6 = 414ns
Qrr CFD = 1.1µC trr CFD = 155ns
NO CFD-type required in applications with non-repetitive hard diode commutation such as LLC, phase shift ZVS etc. => Good choice for resonant topologies
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011
Gate voltage signal vs drain current
C6 shows no gate spikes up to pulse currents beyond 2 times rated nominal current
Competitor part shows turn off gate spikes already below nominal current. Datasheet ratings on max VGS gets violated.
C6
Nominal current
pulse current 40A
20A
Vgs
Id
Comp SJ
Nominal current
pulse current 40A
20A
Dynamical allowed value of gate voltage (30V)
Vgs
Id
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011
Comparison turn on / turn off losses C6 vs C3
0
0,01
0,02
0,03
0,04
0,05
0,06
0,07
0,08
0,09
0 5 10 15 20 25 30 35 40
External gate resistor [Ohm]
Tu
rn o
n /
tu
rn o
ff l
os
se
s [
mJ
]
Turn on loss C6
Turn off loss C6
Turn on loss C3
Turn off loss C3
similar turn on losses. C6 higher turn off-losses at plug-and-play replaced. lower Rg for C6 recommended!
IDS=5.4 A, VDS=400 V, Tj=125 °C, RDSon=190 mOhm
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011
Comparison turn on / turn off losses C6 vs CP
0
0,01
0,02
0,03
0,04
0,05
0,06
0,07
0 5 10 15 20 25 30 35 40
External gate resistor [Ohm]
Tu
rn o
n /
tu
rn o
ff l
os
se
s [
mJ
]
Turn on loss C6
Turn off loss C6
Turn on loss CP
Turn off loss CP
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
Comparison efficiency in commercial 300W PFC Stage Vin=115Vac rms, fsw = 130 kHz, included losses: AUX, EMC filter, Rectifier
87.000%
88.000%
89.000%
90.000%
91.000%
92.000%
93.000%
94.000%
95.000%
96.000%
0.00 50.00 100.00 150.00 200.00 250.00 300.00 350.00
Pout [W]
eta
[%]
IPP60R190C6 0R
IPP60R190C6 3R3
IPP60R190C6 10R
DTMOS II 3R3
STP25NM60N 3R3
SPP20N60C3 3R3
IPP60R199CP 3R3
95.0%
95.1%
95.2%
95.3%
95.4%
95.5%
290 295 300 305 310
Pout [W]
eta
[%
]
93.8%
94.0%
94.2%
94.4%
94.6%
140 145 150 155 160Pout [W]
eta
[%
]
87.4%
87.6%
87.8%
88.0%
88.2%
88.4%
88.6%
20.00 30.00 40.00 50.00
Pout [W]
eta
[%
]
C6 better than C3 0.6% @ 20% and 0.1% @ 50% load
normal operating area On par with C3,
0.2% below CP and DTII
Equal to CP and DTMOS II, 0.1% better than C3
Equal to DT MOSII, 0.6% better
than C3
Comp A 3R3
Comp B 3R3
Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011
Good Qoss for C6
0
25
50
75
100
125
150
0 50 100 150 200 250 300 350 400 450 500
Voltage VDS [V]
Qo
ss
[n
C]
0
3
6
9
12
15
18
Eo
ss [
µJ]
Qoss C6
Qoss C3
Qoss CP
Eoss C6
Eoss C3
Eoss CP
Less resonant energy required in soft switching converters
C6 shows the best Figure-of-Merit Ron*Eoss
Best Eoss for C6
RDSon 190 mOhm
C3
CP
C6
2DSossoss VC
2
1E
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
Differentiation between CoolMOS™ C6/E6 Smaller internal Rg for E6
Motivation:
Minimize efficiency gaps between C3 and C6 in DCM and LLC applications due to high integrated Rg E6 series has lower integrated Rg
Benefits:
Optimized for efficiency in DCM applications (compared to C6)
Ease of use / easy to design in
0
5
10
15
20
Rg
,in
t [O
hm
]
RDSon[mOhm]
Rg,int selection 600V
600V_E6_new [Ohm]
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
Summary:
CoolMOS C6/E6 best efficiency both light and heavy load.
Reduction of external Rg is required to utilize full potential of C6/E6.
Target to replace C3, product portfolio cover C3 and CP.
CoolMOS C6/E6 self-limited avoids excessive di/dt and dv/dt
Easy to use.
Easy drive and control via external Rg.
CoolMOS C6/E6 with excellent commutation ruggedness.
Possible to be alternative of CoolMOS CFD series.
CoolMOSTM C6/E6 - the new reference in the HV MOS
market
Copyright © Infineon Technologies 2010. All rights reserved.
600 V CoolMOS™ C6 and E6 Portfolio……cont
21.10.2011
Copyright © Infineon Technologies 2010. All rights reserved.
600 V CoolMOS™ C6 and E6 Portfolio……cont
21.10.2011
Copyright © Infineon Technologies 2010. All rights reserved.
CoolMOS 650V CFD Improvements new CFD technology
The new CoolMOS CFD technology will have several improvements vs. existing CFD portfolio:
New 650V voltage rating
Improved Qrr, trr vs. current CoolMOS CFD portfolio
Soft current tail during diode commutation
Reduced Eoss -> Higher switching efficiency
Qrr, trr max. ratings defined
Copyright © Infineon Technologies 2010. All rights reserved.
Qrr Comparison
10/21/2011 Copyright © Infineon Technologies 2009. All rights reserved. Page 34
Copyright © Infineon Technologies 2010. All rights reserved.
Improved commutation behavior: Softness and Qrr
Qrr C3 = 20µC trr C3 = 729ns
Qrr CFD = 1.00µC trr CFD = 189ns
The new CoolMOS CFD technology shows strongly improved body diode commutation behavior
¬reduced Qrr vs. todays CFD
¬reduced trr vs. todays CFD
¬soft current tail
di/dt = 100A/µs
Copyright © Infineon Technologies 2010. All rights reserved.
CoolMOS CFD Improved diode commutation behavior @100A/µs
Qrr C3 = 20µC trr C3 = 729ns
Qrr C6 CFD = 1,40µC trr C6 CFD = 189ns
di/dt = 100A/µs
Qrr C3 CFD = 2µC trr C3 CFD = 189ns
Copyright © Infineon Technologies 2010. All rights reserved.
Hard commutation of body diode at >1000A/µs
T=25°C; If=20A; Rg,d=5.6 Ohm; Ugs=13V
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400 450 500
t[µs]
U[V
]
Comp2 43A
SPW47NM60CFD
IPW65R080CFD
676V
569V
452V
Comp2 43A SPW47N60CFD IPW65R080CFD
- SPW47N60CFD - IPW65R080CFD
- Comp2 43A
Copyright © Infineon Technologies 2010. All rights reserved. 10.02.2010 Page 38 Copyright © Infineon Technologies 2010. All rights reserved.
Efficiency comparison 600V CFD vs 650V CFD2 in 600W Server PSU
ZVS-Area
HS-Area
Old ES with higher internal Rg. Higher Eff. is expected with
next ES
Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21
CoolMOS™ series naming
Infineon
Power MOSFETs
Package name W [TO-247]
I [I²-PAK]
A [TO-220 FP]
P [TO-220]
B [TO-263]
S [TO-251 SL]
U [TO-251]
D [TO252]
N [TO223]
voltage class
R for Rds(on)
Rds(on) class
CoolMOS™ product familie CP CFD C3 C6
I P P 60 R 099 C6
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