fpix_flip_chip_test module calibration tests november 14 th 2012

FPIX_flip_chip_test module calibration tests

November 14th 2012

2

Sensor

• 2 SINTEF 2004 1x1 bump bonded– Planar 300 μm thick pixel sensor

• Flip-chipped then reflow• Assembled on a new testboard on November

7th, and 12th 2012• No post-dicing IV was performed for the first

sensor

3

Leakage currentFirst sensor’s before BBM IV was not performed!

4

Full calibration summary – First sensor

ROC pixel alive test

Bump-bonding test

Second sensor has similar calibration

Bias = -150 V

5

Testing bum-bond with forward bias test

• Run pixel alive test • ROC on with sensor at reverse bias• ROC on with sensor at forward bias

• Idea:– Forward bias will saturate the sensor, causing pre-

amplifiers in chip pixels saturate: chip pixels disappear from the pixel alive test map if bump-bonds are in contact

6

Testing bum-bond with forward bias test

SINTEF 2004 1x1 First sensor

NO

BIA

SRE

VERS

E BI

ASFO

RWAR

D B

IAS

SINTEF 2004 1x1 Second sensor

REVERSE BIAS = -150 VFORWARD BIAS = +10 V

7

Radioactive source test (Sr-90)

Bias = -150VMean = 22 ke-MP = 18 ke-285 μm thick

Double pixel hits In one trigger

SINTEF 2004 1x1 Second sensorSINTEF 2004 1x1 First sensor

Bias = -150VMean = 23 ke-MP = 18 ke-285 μm thick

8

Charge collection Charge distribution mean values versus bias voltages Scan not performed for the second sensor

9

Summary• Two SINTEF 2004 1x1 sensors bump bonded• Both sensor ROCs work fine

– Good calibrations: Gain, SCurve, Vsf etc– Full calibration

• Forward bias current and standard methods showed that all bump-bonds are in good contact – IV suggest a good ROC to sensor contact established since

ground goes through ROC for sensor HV• Standard bump-bond algorithm implemented in PSI

DAQ software consistent with forward bias test• Source tests showed a good charge collection

10

SINTEF 2011 1x1 SENSORS

11

12

Past design 1x2 in previous production

L1, S1, S2, S3, S5

New in this batch.Maximized pixel area

S8

L2, L3, S6

New in this batch.Removed asimmetry

S4, S7Note: S1, S2 and S3 have slim edges (S1 the slimmest and increasing in S2 and S3)

SINTEF_2011 1x1 sensors

13

November 13, 2012

14

Sensor: SINTEF_2011_WA15_S5

• Planar 300 μm thick• Bump bonded to a ROC on 11-13-2012

- Flip-chipped then reflown• Assembled on a new testboard on November

13th 2012

15

A15 S5 - Leakage currentBreakdown [V]

On wafer 195Post-dicing 225Module 960

16

A15 S5 - Full calibration summary (-150V)

ROC pixel alive test

Bump-bonding test (this test found 3185 dead bumps)

Bias = -150 V

17

A15 S5 - Full calibration summary (-400V)

ROC pixel alive test

Bump-bonding test (this test found 1 dead bumps)

Bias = -400 V

18

A15 S5 - Testing bum-bond with forward bias test

SINTEF_2011_WA15_S5 pixel alive test at REVERSE BIAS

SINTEF_2011_WA15_S5 pixel alive test at NO BIAS

REVERSE BIAS = -150 VFORWARD BIAS = +10 V

pixel alive test at FORWARD BIASpixel alive test at REVERSE BIAS with LIGHT

19

A15 S5 - Radioactive source test (Sr-90)

Source above sensor center Source above sensor edge

Pixel alive map at forward bias Source placed on different locationsabove the sensor No correlation found betweenforward bias pixel alive map andsource hitmap Can we trust forward bias test?

REVERSE BIAS = -150 VFORWARD BIAS = +10 V

20

A15 S5 - Radioactive source test (Sr-90)

Bias = -150VMean = 25 ke-MP = 21.5 ke-Thickness = 300 μm

Double pixel hits In one trigger

21

Sensor: SINTEF_2011_WA15_S6

• Planar 300 μm thick• Bump bonded to a ROC on 11-13-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

13th 2012

22

A15 S6 - Leakage currentBreakdown [V]

On wafer 360Post-dicing 370Module 835

23

A15 S6 - Full calibration summary (-150V)

ROC pixel alive test

Bump-bonding test (this test found 2488 dead bumps)

Bias = -150 V

24

A15 S6 - Full calibration summary (-300V)

ROC pixel alive test

Bump-bonding test (this test found 6 dead bumps)-400 V has also identical results

Bias = -300 V

25

A15 S6 - Testing bum-bond with forward bias test

SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS

SINTEF_2011_WA15_S6 pixel alive test at FORWARD BIAS

SINTEF_2011_WA15_S6 pixel alive test at NO BIAS

~1200 pixels

Forward bias: 1200 dead bumpsPSI software test: 2488 dead bumps

REVERSE BIAS = -150 VFORWARD BIAS = +10 V

26

A15 S6 - Radioactive source test (Sr-90)

Bias = -150VMean = 20.7 ke-MP = 17.5 ke-Thickness = 300 μm

Source hit map

27

Summary• SINTEF 2011 S5 and S6 sensors bump bonded on 11-13-2012• Both sensor ROCs work fine

– Good calibrations: Gain, SCurve, Vsf etc– Full calibration with minimum effort

• Sensor breakdown voltages increased after assembly– No breakdown observed up to 800 V

• Bump-bond tests– Forward bias method: 1000 (S5), 1200 (S6) dead bumps – PSI method: 3185 (S5), 2488 (S6) dead bumps

• Source tests showed a good charge collection– Double hits in one trigger needs to removed from analysis– S6 will be retested with source

28

November 14, 2012

29

Sensor: SINTEF_2011_WA15_S7

• Planar 300 μm thick• Bump bonded to a ROC on 11-14-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

14th 2012• IVs on wafer, before and after BBM, and on

testboard measured

30

A15 S7 - Leakage currentBreakdown [V]

On wafer 310Before BBM 320BBM 945Testboard >1100

31

A15 S7 - Full calibration summary

ROC pixel alive test

Bump-bonding test

Bias = -200 V

32

A15 S7 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS

pixel alive test at FORWARD BIAS

SINTEF_2011_WA15_S6 pixel alive test at NO BIAS

pixel alive test at REVERSE BIAS with LIGHT

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

33

A15 S7 - Radioactive source test (Sr-90)

Bias = -200VMean = 25 ke-MP = 21.7 ke-Thickness = 300 μm

Source hit map

34

Sensor: SINTEF_2011_WA15_S8

• Planar 300 μm thick• Bump bonded to a ROC on 11-14-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

14th 2012• IVs on wafer, before and after BBM, and on

testboard measured

35

A15 S8 - Leakage currentBreakdown [V]

On wafer 310Before BBM 220BBM >1100Testboard 995

36

A15 S8 - Full calibration summary

ROC pixel alive test

Bump-bonding test

Bias = -200 V

37

A15 S8 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA15_S6 pixel alive test at FORWARD BIAS

SINTEF_2011_WA15_S6 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA15_S6 pixel alive test with LIGHT at REVERSE BIAS

38

A15 S8 - Radioactive source test (Sr-90)

Bias = -200VMean = 26 ke-MP = 22.2 ke-Thickness = 300 μm

Source hit map

39

Sensor: SINTEF_2011_WA17_S5

• Planar 300 μm thick• Bump bonded to a ROC on 11-15-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

15th 2012• IVs on wafer, before and after BBM, and on

testboard measured

40

A17 S5 - Leakage currentBreakdown [V]

On wafer 205Before BBM 185BBM >1000Testboard >1000

41

A17 S5 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 67 dead bumps)

Bias = -200 V

42

A17 S5 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA17_S5 pixel alive test at FORWARD BIAS

SINTEF_2011_WA17_S5 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA17_S5 pixel alive test with LIGHT at REVERSE BIAS

43

A17 S5 - Radioactive source test (Sr-90)

Bias = -200VMean = 22.3 ke-MP = 19.7 ke-Thickness = 300 μm

Source hit map

44

Sensor: SINTEF_2011_WA17_S6

• Planar 300 μm thick• Bump bonded to a ROC on 11-15-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

15th 2012• IVs on wafer, before and after BBM, and on

testboard measured

45

A17 S6 - Leakage currentBreakdown [V]

On wafer 210Before BBM 185BBM >1000Testboard >1000

46

A17 S6 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 6 dead bumps)

Bias = -200 V

47

A17 S6 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA17_S6 pixel alive test at FORWARD BIAS

SINTEF_2011_WA17_S6 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA17_S6 pixel alive test with LIGHT at REVERSE BIAS

48

A17 S6 - Radioactive source test (Sr-90)

Bias = -200VMean = 26 ke-MP = 21.2 ke-Thickness = 300 μm

Source hit map

49

Sensor: SINTEF_2011_WA17_S7

• Planar 300 μm thick• Bump bonded to a ROC on 11-15-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

15th 2012• IVs on wafer, before, and on testboard

measured

50

A17 S7 - Leakage currentBreakdown [V]

On wafer 405Before BBM 310Testboard 830

51

A17 S7 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 15 dead bumps)

Bias = -200 V

52

A17 S7 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA17_S7 pixel alive test at FORWARD BIAS

SINTEF_2011_WA17_S7 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA17_S7 pixel alive test with LIGHT at REVERSE BIAS

53

A17 S7 - Radioactive source test (Sr-90)

Bias = -200VMean = 27 ke-MP = 21.4 ke-Thickness = 300 μm

Source hit map

54

Sensor: SINTEF_2011_WA17_S8

• Planar 300 μm thick• Bump bonded to a ROC on 11-15-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

15th 2012• IVs on wafer, before, and on testboard

measured

55

A17 S8 - Leakage currentBreakdown [V]

On wafer 325Before BBM 330Testboard 810

56

A17 S8 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 2 dead bumps)

Bias = -200 V

57

A17 S8 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA17_S8 pixel alive test at FORWARD BIAS

SINTEF_2011_WA17_S8 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA17_S8 pixel alive test with LIGHT at REVERSE BIAS

58

A17 S8 - Radioactive source test (Sr-90)

Bias = -200VMean = 25.5 ke-MP = 21 ke-Thickness = 300 μm

Source hit map

59

Sensor: SINTEF_2011_WA16_S5

• Planar 300 μm thick• Bump bonded to a ROC on 11-16-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

16th 2012• IVs on wafer, before, and on testboard

measured

60

A16 S5 - Leakage currentBreakdown [V]

On wafer 210Before BBM 185After BBM >1000Testboard 950

61

A16 S5 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 2 dead bumps)

Bias = -200 V

62

A16 S5 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA16_S5 pixel alive test at FORWARD BIAS

SINTEF_2011_WA16_S5 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA16_S5 pixel alive test with LIGHT at REVERSE BIAS

63

A16 S5 - Radioactive source test (Sr-90)

Bias = -200VMean = 26.7 ke-MP = 21.7 ke-Thickness = 300 μm

Source hit map

64

Sensor: SINTEF_2011_WA16_S6

• Planar 300 μm thick• Bump bonded to a ROC on 11-16-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

16th 2012• IVs on wafer, before, and on testboard

measured

65

A16 S6 - Leakage currentBreakdown [V]

On wafer 345Before BBM 190After BBM 835Testboard 825

66

A16 S6 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 13 dead bumps)

Bias = -200 V

67

A16 S6 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA16_S6 pixel alive test at FORWARD BIAS

SINTEF_2011_WA16_S6 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA16_S6 pixel alive test with LIGHT at REVERSE BIAS

68

A16 S6 - Radioactive source test (Sr-90)

Bias = -200VMean = 27 ke-MP = 22.6 ke-Thickness = 300 μm

Source hit map

69

Sensor: SINTEF_2011_WA16_S7

• Planar 300 μm thick• Bump bonded to a ROC on 11-16-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

16th 2012• IVs on wafer, before, and on testboard

measured

70

A16 S7 - Leakage currentBreakdown [V]

On wafer 345Before BBM 190Testboard 980

71

A16 S7 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 5 dead bumps)

Bias = -200 V

72

A16 S7 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA16_S7 pixel alive test at FORWARD BIAS

SINTEF_2011_WA16_S7 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA16_S7 pixel alive test with LIGHT at REVERSE BIAS

73

A16 S7 - Radioactive source test (Sr-90)

Bias = -200VMean = 29 ke-MP = 25 ke-Thickness = 300 μm

Source hit map

74

Sensor: SINTEF_2011_WA16_S8

• Planar 300 μm thick• Bump bonded to a ROC on 11-16-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

16th 2012• IVs on wafer, before, and on testboard

measured

75

A16 S8 - Leakage currentBreakdown [V]

On wafer 345Before BBM 325After BBM 970Testboard >1000

76

A16 S8 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 13 dead bumps)

Bias = -200 V

77

A16 S8 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA16_S8 pixel alive test at FORWARD BIAS

SINTEF_2011_WA16_S8 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA16_S8 pixel alive test with LIGHT at REVERSE BIAS

78

A16 S8 - Radioactive source test (Sr-90)

Bias = -200VMean = 25.6 ke-MP = 21.3 ke-Thickness = 300 μm

Source hit map

79

Sensor: SINTEF_2011_WA18_S5

• Planar 300 μm thick• Bump bonded to a ROC on 11-17-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

17th 2012• IVs on wafer, before, and on testboard

measured

80

A18 S5 - Leakage currentBreakdown [V]

On waferBefore BBMTestboard

81

A18 S5 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 493 dead bumps)Not repeatable and degrades at higher biases

Bias = -200 V

82

A18 S5 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA18_S5 pixel alive test at FORWARD BIAS

SINTEF_2011_WA18_S5 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA18_S5 pixel alive test with LIGHT at REVERSE BIAS

83

A18 S5 - Radioactive source test (Sr-90)

Bias = -200VMean = 27.6 ke-MP = 22.5 ke-Thickness = 300 μm

Source hit map

84

Sensor: SINTEF_2011_WA18_S6

• Planar 300 μm thick• Bump bonded to a ROC on 11-17-2012

- Flip-chipped then reflow• Assembled on a new testboard on November

17th 2012• IVs on wafer, before, and on testboard

measured

85

A18 S6 - Leakage currentBreakdown [V]

On waferBefore BBMTestboard

86

A18 S6 - Full calibration summary

ROC pixel alive test

Bump-bonding test (found 1 dead bumps)

Bias = -200 V

87

A18 S6 - Testing bum-bond with forward bias + light test

SINTEF_2011_WA18_S6 pixel alive test at FORWARD BIAS

SINTEF_2011_WA18_S6 pixel alive test at REVERSE BIAS

REVERSE BIAS = -200 VFORWARD BIAS = +10 V

SINTEF_2011_WA18_S6 pixel alive test with LIGHT at REVERSE BIAS

88

A18 S6 - Radioactive source test (Sr-90)

Bias = -200VMean = 30 ke-MP = 25 ke-Thickness = 300 μm

Source hit map

89

November 27, 2012

90

Noise study

• SCurve tests performed at– 22 °C– Vbias [-V] = 25, 50, 75, 100, 125, 150, 175, 200,

250, and 300– Almost no noise date at Vbias = -25 V

91

SINTEF 2011 WA15

92

SINTEF 2011 WA16

93

SINTEF 2011 WA17