optical fabrication and optical manipulation of semiconductor nanoparticles

Optical fabrication and Optical manipulation

of semiconductor nanoparticles

Ashida lab. Nawaki Yohei

2

Contents• Introduction

– Optical fabrication and manipulation– Advantage of particles– Photo Induced force– Resonant force

• Purpose– Previous study– My study

• Experimental setup– Ablation and Manipulation– Scanning electric microscopy

• Optical fabrication– Tablet of GaN– Crystal of GaN

• Optical manipulation– Zinc oxide

• Summary

3

Ablation and manipulationIntroduction

Ablation laser

Manipulation laser

AblationFabrication method of particlesusing laser sputtering

ManipulationTransporting method by the resonant radiation force

Si substrate

Low-dimensional structures4Introduction

DO S DO S DO S DO S

E E E E

Bulk Thin film Quantum wire Nano particle

enhancement of oscillator strength

Photo induced force5Introduction

Gradient Force

Scattering and Absorption pressure

Optical axis

Photo induced forceGradient forceScattering and Absorption pressure

Photo induced force: 光誘起力Gradient force: 勾配力Scat. And abs. pressure: 散逸力

Gradient force6Introduction

The force pushing objects to the focal point

Stabilization point

Electrical gradient

Gaussian beam

Scattering and Absorption force7Introduction

The force arising from the momentum transfer from the light

ℏ𝜈 power

scattering

absorption

Manipulation in various scale8Introduction

MicroparticleNanoparticleAtom

1mm~1nm~1mm~1nm

Optical tweezers

Structural dependenceNo Structural dependence

Laser cooling

No resonanceresonance

Structural dependence

resonanceor

No resonance

It’s difficult for optical

manipulation.

Energy of applied light≠

Energy of exciton level

Energy of applied light=

Energy of exciton level

Resonant or Non-resonant light9Introduction

Non resonant ResonantResonant Resonant

𝐸=𝐸𝑔−𝐸𝑏+∆𝐸

∆𝐸=𝜋 2ℏ2

2𝑀𝑎2

E

a

Enhancement by resonant light10Introduction

Ref: T.Iida and H. Ishihara Phys. Rev. Lett. 90, 057403 (2003)Using resonant lightPhoto induced force is drastically enhanced.

Numerical calculation example (CuCl)

100 times of gravitational acceleration

Previous study11Purpose

Our group has succeeded manipulation of nanoparticles

Wide-gap semiconductorCuCl ZnO

K. Inaba phys.stat.sol. (b)243, No.14, (2006) S. Okamoto master thesis (2011)

My study12Purpose

GaN bulk

GaN particles

Manipulated GaN particles

ablation

manipulation

Fabrication method13Experimental setup

Nd:YAG

Ti:sapphire

ablation laser

manipulation laser

wavelength :525nmpulse duration :10ns

SHG

wavelength :726nm

cryostat

Si substrate

sample

back substrate

front substrate

Vacuum state (300K)

Superfluid He state (2K)wavelength :718nm

pulse duration :100fs

Observation method14Experimental setup

Electron beam

Secondary electron

sample

Character X-ray

Cathode Luminescence

SEM measurement

CL measurement

Energy Dispersive X-ray Spectrometry

Scanning electron microscope

Scanning electron microscope: 走査型電子顕微鏡Secondary electron: 二次電子Cathode luminescence :電子線励起による発光Character X-ray: 特性 X線

To analyze element

To take 2D image

Optical fabrication

15

Gallium Nitride16Ablation

GaN: 3.4eV cf. ZnSe, SiC, ZnO, CuClGaN has wide controllable range of bandgap

with ternary crystal semiconductor InN, AlN.0.7eV~6.1eVCrystal growth is difficult

Blue- and UV-Light emitting diode and laser

Wide-gap semiconductor

Tablet of GaN17Ablation

Press!

Powder Tablet

SEM images18Ablation

Ablation conditionsVacuum stateNd:YAG power 0.5mJ

I could fabricate particles...

Element analysis19Ablation

EDS data

Ga mapping image

SEM image

Nitrogen peak was expected.

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Particles were oxidized.

Crystal of GaN21Ablation

Crystal

Tablets included many impurity.

The reason why is that oxidized particle were fabricated.

The surface of powders were oxidized.

I used crystal of GaN

SEM image22Ablation

Vacuum stateAblation conditions

Nd:YAG power :1.5mJ

Element analysis23Ablation

A broken piece by ablation

Ga mapping image

SEM image

EDS data

Nitrogen was observed.

Element analysis24Ablation

Fabricated particle by ablation

Ga mapping image

SEM image

EDS data

Nitrogen peak was expected.

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Particles have nitrogen defect.

Superfluid Helium condition26Ablation

Superfluid HeliumLow temperature

Viscosity becomes zero.

Resonant energy very sharp

Small destabilizing effect

Suitable for optical manipulation The particles can be cool rapidly.

For ablation

Crystal of GaN27Ablation

Superfluid He stateAblation conditions

Nd:YAG power 0.5mJ

Crystal of GaN28Ablation

Ga mapping image

SEM image

Nitrogen peak was expected.

EDS data

29

Particles have nitrogen defect.

Results30Ablation

The particles had nitrogen defect and contained oxygen.

Tablet from powderVacuum conditionsuperfluid He condition

In such condition

CrystalVacuum conditionsuperfluid He condition

Optical manipulation

31

Zinc Oxides32manipulation

Band-gap energy of ZnO is 3.4eV.

Wide-gap semiconductor

1mm

1 cm

Polygonal shape

ZnO is very stable material, because It’s oxidation products.

Problem of size distribution33manipulation

Advantage of particle Density of state

Size distribution

Density of state becomes cloudy.

Density state become sharply.

Pulse laser spectra34manipulation

3.35 3.36 3.37 3.38 3.39 3.40

Inte

nsity

(a.u

.)

Photon energy(eV)3.35 3.36 3.37 3.38 3.39 3.40

Inte

nsity

(a.u

.)

Photon energy (eV)

Pulse durationPeak energySpectrum width

1ps100fs3.38eV3.38eV

2meV20meV

fs pulse laser ps pulse laser

Resonance radiusunder 100nm radius specific radius

Y. Saito Master thesis (2009)

Decrease of size distribution35manipulation

Y. Saito Master thesis (2009)

0 10 20 30 40 50 60 70 80 90 1000

2

4

6

8

粒子数

(nm)粒子直径

0 10 20 30 40 50 60 70 80 90 1000

2

4

6

8

10

12

粒子数

(nm)粒子直径

fs pulse laser ps pulse laser

The Size distribution reduced in response to spectrum width.

I try to measure size distribution from spectrum width of

photoluminescence.

Summary36

Optical fabricationI can’t fabricate GaN particles

Optical manipulation

The particles fabricated by ablation have nitrogen defect and contained oxygen.

I try to measure size distribution from spectrum width of photoluminescence.

Appendix

37

38

Photo induced forceAppendix

bscat nmmr

cIF

2

2

2

4

650

21

3128

Gradient force

Radiation pressure

22

2332

21

22E

mmrnEnF bb

grad

Optical letters vol.11, No. 5, 288 (1986)

First experiment39Appendix

transparent latex spheressize

material

0.59, 1.31, 2.68mm

CW argon laser = 0.5145mmw0= 6.2mmPower 19mW

The author measured sphere moved at 26±5mm/sec

samples

laserTEM00

Laser cooling40

Quantum confinement41Appendix

a > ab

a :ドット半径ab :励起子ボーア半径

∆𝐸=ℏ2𝜋 2

2𝑀𝑒𝑥𝑎2

ドット内に励起子が閉じ込められる

2a 2ab

ΔE量子サイズ効果によりエネルギーレベルが変化

2a

弱閉じ込めモデル

2a2ab

ab > a強閉じ込めモデル

励起子ボーア半径CuClドット半径

0.68nm数 nm

弱閉じ込めモデル

励起子の重心運動が量子化