chapter 6 띌뱶덎 - isu.edu.t · pdf file2 ꗘ볐 ꅅꙃꕘ닕ꚨꗺꪺꕼ귓ꚨ꓀...
If you can't read please download the document
TRANSCRIPT
1
Chapter 6
2
3
IC 40 to 50%
4
IC
EDA PR Chip
EDA: Electronic Design Automation
PR: Photoresist
5
IC
CMP
6
PR
7
8
9
/
10
11
12
13
14
15
16
17
PR
+ PR
18
19
20
(DUV), 248 nm I-line (365
nm)
21
DUV
(PEB)
22
+ H+
+ H+ PR PR
PEB PEB
+
23
24
25
26
27
P
USGSTI
28
P
USGSTI
29
P
USGSTI
30
P
USGSTI
31
P
USGSTI
32
P
USGSTI
33
P
USGSTI
34
P
USGSTI
35
36
37
150 C
38
(Hexamethyldisilazane, HMDS)HMDS
39
HMDS
40
41
42
(m
)
(rpm)
0 7k2k 3k 4k 5k 6k
0.5
1.0
1.5
2.0
2.5
3.0
3.5100 cst
50 cst
27 cst20 cst
10 cst
5 cst
43
~ 500 rpm
~ 3000 - 7000 rpm
44
45
EBR
46
47
48
49
50
51
52
53
54
55
56
57
Edge Bead Removal (EBR)
EBREBR
58
59
60
61
(Wafer edge expose WEE)
62
63
64
65
66
67
68
2.5106/C8(200 mm) 1 C 0.5 m
69
IC
70
71
1970
72
73
N
PR
74
~ 10 m > 2 m
75
~10 m
76
N
PR
~10 m
77
111 m
78
79
80
IC
0.25 m
81
82
X
Y
83
84
G-(436)
H-(405)
I-(365)
300 400 500 600 (nm)
(a.u
)
(
85
(nm) (m)
G-line 436 0.50
H-line 405
I-line 365 0.35 to 0.25XeF 351XeCl 308
KrF (DUV) 248 0.25 to 0.13
ArF 193 0.15 to 0.07
F2 157 0.1
86
87
88
/2nPR
89
/2nPR
90
(Post Exposure Bake, PEB )
(Glass transition) TgTg
91
DUV PEB
92
PEB 110130 C1
93
PEB
94
95
96
+PR
(Tetramethyl ammonium hydride, TMAH (CH3)4NOH))
97
PR PR
PR
PR
98
Positive PR Negative PR
TMAH Xylene
DI Water n-Butylacetate
99
100
101
PR
PR
102
100 130 C 1 2
103
104
PR
PR
105
(SEM)
106
PR
107
(Critical dimension, CD)
108
(Run out)
(Run in)
X
Y
109
(CD)
CD CD
PR PR
PR
110
111
112
113
(Cost of ownership, COO)
114
115
(Depth of focus, DOF)
116
117
()
118
119
()
ro
D
120
(Numerical Aperture)NANA = 2 r0 / D
r0 : D =
NA
121
(Resolution)
NAK
R1
K1NA
R
122
NA
,
,UV DUV, EUV, X-Ray
K1(Phase shift mask)
123
RF MW IR UV X-ray
104 106 108 1010 1012 1014 1016 1018 f (Hz)
104 102 100 102 104 106 108 1010 (meter)
-ray
1012
1020
RF: ; MW: ; IR: ; and UV:
124
(Depth of Focus, DOF)
22
)(2 NAK
DOF
125
)(22
NAK
DOF
2
126
127
128
NA.
DOF
(CMP)
129
I- I-line, 365 nm
0.35 m
DUV KrF , 248 nm0.25 m, 0.18 m and 0.13 m
ArF ,193 nm< 0.13 m
F2,157 nm< 0.10 m
130
I-
< 180 nm, SiO2 UV157 nm F2
OH (CaF2)
,0.035 m
131
1.5
1.0
0.8
0.50.35
0.250.13 0.10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
84 88 90 93 95 98 01 04
(mm
)(m
m)
07 10
0.07 0.05
14
0.18
132
(Phase Shift Mask)
d
nf
d(nf 1) = /2
nf :
133
d
ng
d(ng 1) = /2
ng:
134
PR
PR
PR
PR
I
135
193 nm157 nm
CaF2
(Extreme UV, EUV)X-Ray
136
(EUV)
= 10 to 14 nm~ 20100.1 m
137
EUV
2 1
138
X-ray
X[(Aspect
ratio)]
139
X-ray
X-ray
140
X-ray
X-ray
141
0.014 m
(Scattering with angular limitationprojection electron lithography, SCALPEL)
142
143
SCALPEL
144
145
: : : :