chong yun kang - kisti · 2018. 11. 8. · piezoelectric ceramics & processing piezoelectric...
TRANSCRIPT
Chong Yun Kang
1Electronic Materials Research Center, KIST2KU‐KIST Graduate School of Converging Science and Technology, Korea University
제4회 압전발전 지식연구회2013. 12. 2
1917The ultrasonic submarine detector by P. Langevin
Sonar
1880 First discovery by Pierre and Jacques Curie
Microphones, Accelerometers, Ultrasonic transducers, Bender element actuators, Phonograph pick-ups, Signal filters, etc.
1941BaTiO3
1954PZT
PZT free of patent restrictionsSAW filter, Ultrasonic motor
High resolution stage, Ultrasonic medical diagnosis, inkjet micropump, Diesel fuel injector
Piezoelectric Energy harvesting,Convergence
5
Direct piezoelectric effect
Pi = dijkTjk
Inverse piezoelectric effect
Sij = dkijEk
Piezoelectric effect ;Mechanical Energy⇔Electrical Energy
7
Perovskite crystal structure
▪ BaTiO3, Pb(Zr0.5Ti0.5)O3
Functions Applications
Electrical
Mechanical
Ultrasonic generationSound GenerationActuator
Ultrasonic generator,HumidifierSpeaker, BuzzerUltrasonic motor, Positioner
Mechanical
Electrical
High Voltage generationReceiving of Sound, Ultrasonic wave Sensor
IgnitorHydrophone, MicrophoneAccelerometer, Gyrometer,AE sensor
Electrical
Mechanical
Electrical
Electrical signal processingDetection of distance Transformation of voltage
Filter, ResonatorSONAR, Ultrasonic probeTransformer
10
Large Displacement (Sensitivity = Displacement / Driving Power) Good Positioning Reproducibility High Resolution, Quick Response (0.1ms), Low Power Consumption Large Generative Force (3kg/mm2) and Destruction Strength Small Size and Weight No Degradation / Aging in Usage No Bad Effects toward the Outside (Mechanical Noise, Heat,
Electromechanical Noise etc)
Actuator ; Transducers capable of transduction an input energy into a mechanical
output energy (displacement/force)
11
1982: Sashida
1975: Vishnevsky
1985: Sashida
1942: Williams & Brown
1973: Barth
1981: Vasiljev
2000: ASMO
2005: Nanomotion
2003:KIST1992: Nanomotion
1987: Shinsei USR-60
2003: Elliptec
Piezoelectric Ceramics & ProcessingPiezoelectric Low Temperature Co‐fired Ceramics (LTCC) LTCC‐MLC and Screen printing thick film technologies
Piezoelectric Multi‐layer ActuatorsBender and stack typesSi‐based MEMS piezoelectric actuators
ApplicationsPiezoelectric ValvesPiezoelectric micro‐pumps
한국 등록 0612800한국 등록 0586305한국 등록 485596
한국 등록 0751289한국 등록 10-0844432
mm range Piezoelectric Motor3‐8 mm diameter motors with relatively high torque.
Piezoelectric disk transducers Fractural vibration modeSIDM (Smooth Impact Drive Mechanism)
ApplicationsCamera module actuator (AF, Zoom, OIS)Braile module
Features20 mm/s and 15 g∙f (3.5 mm diameter)30 mm/s and 50 g∙f (5.0 mm diameter)
한국 등록 0698438미국 등록 7,567,017일본 등록 4188967
Alumina Tip
Stainless Steel
PZT
V0 COS(wt)
V0 SIN(wt) V0 COS(wt)
V0 SIN(wt)
X
Y
1
2
3
4
PZT
14
한국 등록 10-965433
Application FieldsMicromanipulation Stage, Semiconductor Equip.Robot Eye, etc
Butterfly Piezoelectric Linear MotorLow profile with relatively high torqueSuperposition of two piezoelectric transducersFlexural vibration modeTraveling wave type
ApplicationsCamera module actuator (AF, Zoom, OIS)Nano Stage
Features30 mm/s and 50 g∙f (4 × 5 mm2)80 mm/s and 200 g∙f (8 × 9 mm2)
한국 등록 0817470미국 등록 8,013,496
Light (optical)
Motion and vibration (mechanical)
Radio frequency (electromagnetic)
Heat (thermal)
Source: Adrian Valenzuela17
Thermoelectric
Photovoltaic Electromagnetic
Piezoelectric
17
Resonance type Impact Type
• Discontinuous, intermittent vibration source, Impact force• Ex) Human motion, walking, wind, rain drop etc.
• Frequency tuning is unnecessary• Piezoelectric bulk disk, cymbal harvesteretc.
Piezoelectric Energy Harvester
Piezoelectrics
• Continuous vibration source.• Ex) Engine vibrations, pipe vibrations etc.• Frequency tuning is necessary for resonance.
• Cantilever energy harvester.
Piezoelectrics
Vibration, Stress
Impact force
18
Electrical - ElectricalCoupling
Vibration, Stress
Mechanical - ElectricalCoupling
Mechanical - MechanicalCoupling
Electric Rectifying CircuitMechanical Energy Electrical
Impedance MatchingPiezoelectric
MaterialsStructure Modification,
Resonance Tunning
V
Rectifying
Battery or LoadPiezoelectrics
19
Market Sector Units 2010 2011 2012 2013 2014 2015CAGR(2010-2015)
Consumer & industial
( $ Millions) $1,929 $2,403 $2,916 $4,305 $6,773 $9,500 37.60%
Source: Pike Research
$0
$1,000
$2,000
$3,000
$4,000
$5,000
$6,000
$7,000
$8,000
$9,000
$10,000
2010 2011 2012 2013 2014 2015
($ M
illio
ns)
Energy Harvestinig Revenue, World Markets : 2010-2015
20
Source: Pike Research
Percentage Market Share of Consumer Devices, World Markets: 2015
Percentage Market Share of Industrial Devices, World Markets: 2015
21
Source: Pike Research
Cross bow MICAz Intel IMote2 Hennic JN5139Radio standard 802.15.4/ZigBee 802. 15.4 802.15.4/Zig BeeTypical Range 100m (Out door)
30m 1km30m door)
Data Rate(kbps) 250 kbps 250 kbps 250KbpsSleep Mode (deep sleep) 15цA 390 цA 2.8цA(1.6цA)
Processor Only 8 mA active mode 31-53 mA1 207+0.325 MHz mA
Rx 19.7mA 44mA 34 mATx 17.4mA(+0 dBm) 44mA 34 mA(+3 dBm)Supply Voltage (min) 2.7V 3.2 V 2.7 VAverage 2.8 mW 12 mW 3 mW
Summary of Power Consumption of Commerical Sensor Network Nodes
0
2000
4000
6000
8000
10000
2010 2011 2012 2013 2014 2015
($ M
illio
ns)
($ Millions)
Wireless Sensor Network Revenue, World Markets: 2010-2015
22
MaterialsPiezoelectric
constant (d31)Dielectric
constant (K33)Electro-mechanical
coupling coefficient (K31)
Ceramics 200 pC/N 2100 0.68
(001) 70PMN-30PT 600 pC/N 4272 0.42
(110) 70PMN-30PT 953 pC/N 2798 0.78
Cantilever piezoelectric energy harvester (PEH) using high d31 single crystal.
0 200 400 600 800 10000
5
10
15
20
25
bulk pzt Single Crystal <001> Single Crystal <011>
Out
put V
olta
ge [V
]
load [k]0 200 400 600 800 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
bulk ceramic Single Crystal <001> Single Crystal <011>
load [k]
POW
ER [m
W]
0 200 400 600 800 10000.000.010.020.030.040.050.060.070.080.090.100.110.12
Cal
aula
te.
curr
ent (
mA
)
load [k]
bulk ceramic Single Crystal <001> Single Crystal <011>
PMN‐30PT Single Crystal (www.ceracomp.com)
23
Piezoelectric Ceramics
한국 등록 10-0929552
MEMS Piezoelectric Energy Harvesting
• Low frequency (< 200 HZ) operation• d31 & d15 mode (normal cantilever structure use 31 mode only)• 3 d31 ≈ d33 < d15
Spiral spring type
15 mode
Normal cantilever type
31 mode
Vibration frequency: 139 Hz
• Output Voltage (P‐P): 83 mV at 4 m/s2 acceleration
• Natural frequency of cantilever: 139 Hz
24
한국 등록 10-0897783한국 등록 10-0956076
Laser lift‐off (LLO) processing, or laser transfer, is that the functional layer transfer fromtransparent substrates to receptor substrates by using laser
Eg (Energy band gap of material) > hv (laser photon energy)→Material is transparent against the laser. Which can’t absorb laser energy.
Eg (Energy band gap of material) < hv (laser photon energy)→Material is not transparent against laser. Which can absorb all energy from laser
25
한국 출원 2012-0063205미국 출원 13/713,396
Laser Lift-off & MIM structure samples
PDMS/Pt/PZT/Pt UV tape/Pt/PZT/Pt
After LLO. #2 (UV‐ tape)After LLO. #1 (PDMS)
Fabrication of PZT devices Laser radiation and sacrificial PZT melting
Sapphire substrate removal
Flexible devices based on PZT
26Sensors and Actuators A 184 (2012)
한국 출원 2012-0063205미국 출원 13/713,396
Touch sensor & Energy generation from MIM PEH
0 10 20
-2.0x10-9
0.0
2.0x10-9
-0.05
0.00
0.05
Time (s)
Vol
tage
(V)
Cur
rent
(A)
Output Voltage
Output Current
Output voltage: ~ 0.05 VOutput current: ~ 0.2 nAPower per unit area (μW/cm2): 1 x 10‐4 μW/cm2
MIM structure
0.05 V
0.2 nA
한국 출원 2012-0063205미국 출원 13/713,396
PI adhesiveSoft baking (hot plate): 80 ℃, 5 minhard baking (hot press):
90 ℃, > 30~ 40 min
Fabrication of planar structure samples
한국 출원 2012-0063205미국 출원 13/713,396
Output voltage: ~ 0.2 VOutput current: ~ 20 nAPower per unit area (μW/cm2): 4 x 10‐3 μW/cm2
Energy generation from planar PEH
0 10 20
-2.0x10-8
0.0
2.0x10-8
-0.2
0.0
0.2
Time (s)
Vol
tage
(V)
Cur
rent
(nA
) Output Voltage
Output Current
Planar structure
0.2 V
20 nA
한국 출원 2012-0063205미국 출원 13/713,396
Comsol modeling & simulation
• PZT thin films on polymer substrate
Si3N4 (500 nm)
SiO2 (500 nm)
Polyimide (500 nm)
Incident laser beam (2*2 μm2)Energy density: 50~100 mJ/cm2
Pulse width: 24 ns
5 μm
Thermal insulation
PZT (200 nm)
한국 등록 1303853
Experimental condition
Film Deposition Experimental conditions
RF power
Substrate Temp.
Gas Ratio
Working Pressure
Thickness of films
Substrate
100W
R.T
Ar:O2 = 20:1
5 mTorr
~/100/100/100 nm
Pt/Ti/SiO2/Si sub.
ELA Experimental conditions
Laser Energy Density
# of Shot
Repetition Rate
Substrate Temp.
60 ~ 90 mJ/cm2
6000
20 Hz
R.T
PZT thin films deposited by RF sputtering at R.T.
PZT thin films annealed by ELA
ELA system
한국 등록 1303853
The flexible energy harvester exhibit generated electrical power with average power density ~ 26 nW/cm2 (0.87 mW/cm3).
0 5 10 15 20 25 30 35 40
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
Average = -0.23 V
Gen
erat
ed V
olta
ge (V
)
Time (s)
Average = 0.36 V
0 5 10 15 20 25 30 35 40-150
-100
-50
0
50
100
150
Time (s)
Gen
erat
ed C
urre
nt (n
A) Average = 74 nA
Average = 64 nA
Electrical power generation 한국 등록 1303853
Nanocomposite generator
PDMS
• Fabricating Process of Nanocomposite piezo-generator
The PDMS containing the two nano-materials (a) is poured into a petri dish (b) and cured at room temperature for one day (c) The NCG is coated with Ag paste are used to top/bottom electrodes (d). The NC poled by applying an electric field of 100 kV/cm for 12h
한국 출원 2012-0063206미국 출원 13/663,781
• The output voltage and current signals
0 1 2 3 4 5 6
-150
-100
-50
0
50
100
150
200
Cur
rent
(nA
)
Time (sec)0 5 10 15 20
-3
-2
-1
0
1
2
3
Volta
ge (V
)
Time (Sec)
PZT NWs & Ag NWs NCG device (with an area of 1.5 cm x 3 cm)Max output voltage: 2.5 VMax output current: 200 nA
한국 출원 2012-0063206미국 출원 13/663,781
Thank you