Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 1/21

CLIC_DDS_HPA study 30.11.2010

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 2/21

CLIC_DDS Study Collaboration

• Vasim Khan

• Alessandro D’Elia

• Roger Jones

• Alexej Grudiev

• Germana Riddone

• Vadim Soldatov

• Walter Wuensch

• Riccardo Zennaro

University of Manchester and Cockcroft institute, U.K.

CERN, Switzerland

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 3/21

Outlook

• High Phase Advance (HPA) Structures: Merits and Demerits

• CLIC_DDS_HPA

• Future of CLIC_DDS_HPA

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 4/21

High Phase Advance Structures

cosψ 2sinψ ψ

E sinψ 4

ω/cR/Q

RP

2acc

2

2A

absg

g

v

v

1) Low group velocity → Less power absorbed during breakdown

Ref: R.M. Jones, et. al., SLAC-PUB 8887

CLIC

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 5/21

NLC: Band partitioning

NLC: DS1 a = 4.23 mm

ψacc : 120°→ 150°:Lowest dipole kick factor reduces by ~ 20%

Ref: R.M. Jones, et. al., SLAC-PUB 9467

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 6/21

Fundamental mode Optimisation CLIC_DDS_HPA

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 7/21

Band partitioning: CLICDDS_A and DDS_HPA

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 8/21

120deg.Γx = 0.0126

Cell # 1a=4.0 mm, t=4.0 mm

150deg.Γx = 0.021

Cell # 1a=4.0 mm, t=3.2 mm6.1~

150

120Q

QΓ

1α Q

Dipole mode properties

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 9/21

DDS_HPA

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 10/21

RF parameters Unit DDS_A DDS_HPA42 DDS_HPA32

Phase advance / cell Deg. 120 150 150

Iris thickness mm 4/1.47 3.2/2.8 3.2/2.8

Bunch population 109 4.2 4.2 3.2

Q (In / Out) - 5020 / 6534 6931/7045 6931/7045

R’ (In / Out) MΩ/m 51 / 118 72.4/102.4 72.4/102.4

vg/c (In / Out) % 2.07 / 1.0 2.1 / 0.45 2.1 / 0.45

Eaccmax (L./UnL.) MV/m 105 / 132 93 .3/ 143 90/ 138

Pin MW 71 68.2 63.6

∆Tmaxsur

oK 51 51 48

Emaxsur MV/m 220 234 225

Scmax W/μm2 6.75 5.9 5.5

RF-beam efficiency % 23.5 29 23.3

Comparison: 120 vs 150

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 11/21

DDS_HPA: Merits and Demerits

Reduction in dipole bandwidth from 2.1 GHz to 1.8 GHz

1. Necessary to reduce bunch population to satisfy wakefield constrains

2. Luminosity reduction

Reduced input power Less power absorbed

during breakdown Kick factors reduced Better dipole coupling

Cost efficient ?

Merits Demerits

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 12/21

Enhanced damping: Eight manifoldsFour regular and four additional manifolds

Significant coupling

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 13/21

Cell parametersa = 4.3 mmt = 2.6 mmRc = 9.0 mmMr = 2.0 mmMc = 15.1 mm

Fundamental mode propertiesQ=7080R’/Q=10.356 (kΩ/m)vg=2.44 (%c)Es/Eacc=2.22Hs/Eacc=4.3 (mA/m)Sc/Eacc=5.45 x 10-4 (W/μm2/Eacc2)

Dipole mode properties

fsyn=16.1 GHz

Cell # 1

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 14/21

Cell parametersa = 2.5 mmt = 2.8 mmRc = 8.8 mmMr = 2.0 mmMc = 15.1 mmvg=0.32 (%c)

Cell # 24

fsyn=17.89 GHz

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 15/21

Lowest dipole mode propertiesΔf=2.25 σ=1.78 GHzΔf/fc= 10.5 (%c)

Two Cell result Need improvement

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 16/21

Regular manifold

Additional manifold

Damping material

εr=13tanδ=0.02NMr=2.8Damp_r=1

Eight manifolds and SicAs the coupling in the last cell is poor it is important to enhance coupling by optimising the last cell

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 17/21

Cell # 24 :NMr=2 .8 Damp_r=1.0

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Accelerating modeNMr=2 .8 Damp_r=1εr=14 tanδ=0.04

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 19/21

DDS_HPA_SiC• SiC insertion in an 8-manifold cell improves damping

• The SiC properites and dimensions are optimised for Cell # 24

• This optimisation does not improve damping of Cell # 1

• Due to SiC losses, multiple avoided crossings are observed

• Need some modification in circuit model to incorporate additional losses (SiC) (future work ?)

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 20/21

Closing remarks

• CLIC_DDS_HPA: 1) Coupling looks promising

2) Need to improve bandwidth

• To be investigated in detail:

1) Eight manifolds

2) DDS_SiC damping

3) Circuit model modification to incorporate SiC losses

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 21/21

Acknowledgments

• We have benefited from discussions with Juwen Wang, Zhengai Li and Toshiyasu Higo on X-band structures

• Thanks to Igor Syratchev for suggesting to investigate CLIC_DDS_SiC.

Thank you

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 22/21

Additional slides

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 23/21

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 24/21

Cell # 1

Cell # 24

Cell # 1

Cell parametersa = 4.6 mmt = 2 mmRc = 9.0 mmMr = 2.0 mmMc = 15.1 mmvg = 3.6 (%c)

Fsyn~15.76 GHz

Cell # 24

Cell parametersa = 3.3 mmt = 3 mmRc = 9.0 mmMr = 2.0 mmMc = 15.1 mmvg = 0.95 (%c)

Fsyn~17 GHz

Four manifolds

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 25/21

Cell # 1Cell parametersa = 4.6 mmt = 2 mmRc = 9.0 mmMr = 2.0 mmMc = 15.1 mm

vg = 3.6 (%c)Fsyn~15.77 GHz

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 26/21

Cell # 24

Cell parametersa = 3.3 mmt = 3 mmRc = 9.0 mmMr = 2.0 mmMc = 15.1 mm

vg = 0.95 (%c)

Fsyn~17 GHz

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 27/21

Cell # 1Cell parametersa = 4.6 mmt = 2 mmRc = 9.0 mmMr = 2.0 mmMc = 15.1 mm

vg = 3.6 (%c)Fsyn~15.77 GHz

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 28/21

Cell # 24

Cell parametersa = 3.3 mmt = 3 mmRc = 9.0 mmMr = 2.0 mmMc = 15.1 mm

vg = 0.95 (%c)

Fsyn~17 GHz

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 29/21

Cell # 1 :NMr=2 .8 Damp_r=1.0

Vasim Khan X-Band RF Structures, Beam Dynamics and Sources Workshop, Cockcroft Institute 30.11.10 30/21

Cell # 1Cell parametersa = 4.6 mmt = 1 mmRc = 9.0 mmMr = 2.0 mmMc = 15.1 mm

vg = 4.84 (%c)Fsyn~15.65 GHz