cvd 製程原理與應用 (捷胤工業).ppt [相容模式] · pdf filecvd (chemical vapor...
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CVDCVD
(JISC)
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CVD(Chemicalvapordeposition)
: , , b substrate
B E ByEnergy:a.ThermalCVDb Glow discharge CVDb.GlowdischargeCVDc.Photoinduced
ByPressurea.AP(AtmosphericPressure)CVDb LP (L ) CVDb.LP(Lowpressure)CVDc.PE(plasmaenhance)CVD
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(1)
a.(HomogeneousNucleation) substrate Chamber Particle
b (Hetergeneous Nucleation)b. (Hetergeneous Nucleation) substrate
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(2)
a.(Nucleation)( )
b.(GrainGrowth)
c c.(Coalescence)
d.(FillingofChannels)
e.(Film Growth)
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(FilmGrowth)
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CVD
(a)(a)(b)(c)( )(d)(e)
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Plasma
Whatisplasma?
DCplasma PVDp
1
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Plasma
ACplasma- CVDDryetch AC AC
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Hardwareconcept(1)
13.56 MHz RF
Matching unitGas In
Diffuser (Anode)Glass Substrate
Matching unit
Susceptor (Cathode)
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Hardwareconcept(2)
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CVD (1)
DepositionratepD/R=Avg.THK/time
WER(WetEtchRate)=[THK(beforeetch)THK(afteretch)]/etchtime
Refractiveindex(RIn)
Adhesion(ex:SiNx N2Oplasmatreatment)
f ( i l i h l ) Defect(ParticleorPinholeetc.)
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CVD (2)
Uniformity
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CVD (3)
Stress
tensile
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CVD (4)
Stepcoverage
Good step coverage Poor step coverageGoodstepcoveragePoorstepcoverage
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CVD (5)
Hydrogencontent
SiN :SiHpeakat2200cm1,NHpeakat3300cm1aSi:SiHpeakat2000cm1
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CVD (6)
Breakdownvoltage&Delectric constant
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CVD (7)
Rs(SquareResistance)forN+aSilayer
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CVD (8)
CVDparameter
CVD factor for deposition CVDfactorfordepositionRFpowerPressureSpacingTemperatureG flGasflowrate
Flim GasSiOx SiH4+N2O+N2SiOx SiH4+N2O+N2
G-SiN SiH4+NH3+N2a-Si SiH4+H2
D ti
N+ a-Si SiH4+H2+PH3P-SiN SiH4+NH3+N2
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Depo.time
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PECVD TFT (1)
CVDfilm SiNx (gateSiNx,Passivation SiNx)
RF+N2a.SiH4+NH3SiNx:H+yH2
PECVDdepo. Si3N4 SiNx
b Si3N4 b. Si3N4
c. c gSiNxpSiNx
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PECVD TFT (2)
d. PECVD l Plasma H Si N SiH NH
normalbonddanglingbond
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PECVD TFT (3)
a. Si (danglingbond)
CVDfilmaSi:H
( g g )b. PECVD aSic. TFT
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PECVD TFT (4)
CVD fil N Si HCVDfilmN+aSi:H
a. aSi:H PH3b TFTM2 buffer layerb. TFTM2 bufferlayer
Schottky contact
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PECVD TFT (5)
TFTstructure CHP
Bottom Gate Etch Stop TFT - Cross
SiNxn+ a-SiSiOx
S/D Metal
a-Si
ITOGate Metal
Glass Substrate
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PECVD TFT (6)
TFTstructure BCE
Bottom Gate BCE TFT - Cross
n+ a-Si S/D Metala-Si
SiNx Gate
SiO
Passivation
ITOSiOx
Glass Substrate
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PECVDprocessingissue(1)
a.Particleissue
b. Arcingi.Chamberii.RFPower
iii.chambershift
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PECVDprocessingissue(2)
c The other process issuec.Theotherprocessissue
GroundingSusceptorCleanfilmCleanfilm
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