datasheet ig#50n60tp - mouser.mx · 3 igw50n60tp trenchstoptm performance series rev. 2.1,...

IGBTTRENCHSTOPTMPerformancetechnology

IGW50N60TP600VIGBTTRENCHSTOPTMPerformanceseries

Datasheet

IndustrialPowerControl

2

IGW50N60TPTRENCHSTOPTMPerformanceSeries

Rev.2.1,2016-02-05

HighspeedIGBTinTrenchandFieldstoptechnologyFeatures:

TRENCHSTOPTMtechnologyoffering•verylowVCEsat•lowturn-offlosses•shorttailcurrent•lowEMI•maximumjunctiontemperature175°C•qualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•completeproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

•drives•solarinverters•uninterruptiblepowersupplies•converterswithmediumswitchingfrequency

G

C

E

GC

E

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIGW50N60TP 600V 50A 1.6V 175°C G50DTP PG-TO247-3

3


Rev.2.1,2016-02-05

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

4


Rev.2.1,2016-02-05

MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 600 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CvaluelimitedbybondwireTC=100°C

IC 80.061.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 150.0 A

Turn off safe operating areaVCE≤600V,Tvj≤175°C,tp=1µs1) - 150.0 A

Gate-emitter voltage VGE ±20 V

Short circuit withstand timeVGE=15.0V,VCC≤400VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=150°C

tSC

5

µs

PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot

319.2159.6 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Valuemin. typ. max.

Parameter Symbol Conditions Unit

RthCharacteristics

IGBT thermal resistance,junction - case Rth(j-c) - 0.36 0.47 K/W

1) Defined by design. Not subject to production test.

5


Rev.2.1,2016-02-05

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=50.0ATvj=25°CTvj=175°C

--

1.601.94

1.80-

V

Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.1 5.1 5.7 V

Zero gate voltage collector current ICESVCE=600V,VGE=0VTvj=25°CTvj=175°C

--

--

40-

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=50.0A - 78.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 1950 -

Output capacitance Coes - 83 -

Reverse transfer capacitance Cres - 67 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=480V,IC=50.0A,VGE=15V - 249.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s

IC(SC)VGE=15.0V,VCC≤400V,tSC≤5µsTvj=150°C

- 255 - A

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 20 - ns

Rise time tr - 30 - ns

Turn-off delay time td(off) - 215 - ns

Fall time tf - 18 - ns

Turn-on energy Eon - 1.53 - mJ

Turn-off energy Eoff - 0.85 - mJ

Total switching energy Ets - 2.38 - mJ

Tvj=25°C,VCC=400V,IC=50.0A,VGE=0.0/15.0V,RG(on)=7.0Ω,RG(off)=7.0Ω,Lσ=32nH,Cσ=60pFLσ,CσfromFig.EEnergy losses include “tail” anddiode (IKW50N60DTP) reverserecovery.

6


Rev.2.1,2016-02-05

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=175°CTurn-on delay time td(on) - 21 - ns

Rise time tr - 34 - ns

Turn-off delay time td(off) - 277 - ns

Fall time tf - 55 - ns

Turn-on energy Eon - 2.25 - mJ

Turn-off energy Eoff - 1.39 - mJ

Total switching energy Ets - 3.64 - mJ

Tvj=175°C,VCC=400V,IC=50.0A,VGE=0.0/15.0V,RG(on)=7.0Ω,RG(off)=7.0Ω,Lσ=32nH,Cσ=60pFLσ,CσfromFig.EEnergy losses include “tail” anddiode (IKW50N60DTP) reverserecovery.

7


Rev.2.1,2016-02-05

Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tj≤175°C;VGE=15V)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0.1 1 10 100 10000.01

0.1

1

10

100

DC

Figure 2. Powerdissipationasafunctionofcasetemperature(Tj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,POWERDISSIPATION[W

]

25 50 75 100 125 150 1750

50

100

150

200

250

300

350

Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLECTO

RCURRENT[A]

25 50 75 100 125 150 1750

25

50

75

100

Figure 4. Typicaloutputcharacteristic(Tj=25°C)


IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 40

10

20

30

40

50

60

70

80

90

100

110

120

130

VGE=20V

15V

13V

11V

9V

7V

8


Rev.2.1,2016-02-05

Figure 5. Typicaloutputcharacteristic(Tj=175°C)


IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 40

10

20

30

40

50

60

70

80

90

100

110

120

130

VGE=20V

15V

13V

11V

9V

7V

Figure 6. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0 2 4 6 8 100

25

50

75

100Tj=25°CTj=175°C

Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tj,JUNCTIONTEMPERATURE[°C]

VCE(sat) ,COLLECTO

R-EMITTE

RSATU

RATION[V

]

25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0

3.5IC=25AIC=50AIC=100A

Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,rG=7Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

1 12 23 34 45 56 67 78 89 1001

10

100

td(off)

tftd(on)

tr

9


Rev.2.1,2016-02-05

Figure 9. Typicalswitchingtimesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,IC=50A,testcircuitinFig.E)

rG,GATERESISTOR[Ω]


0 5 10 15 20 25 30 3510

100

1000td(off)

tftd(on)

tr

Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(ind.load,VCE=400V,VGE=15/0V,IC=50A,rG=7Ω,testcircuitinFig.E)



25 50 75 100 125 150 17510

100

td(off)

tftd(on)

tr

Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0,8mA)


VGE(th) ,GATE

-EMITTE

RTHRESHOLD

VOLTAGE[V

]

25 50 75 100 125 150 1750.0

1.0

2.0

3.0

4.0

5.0

6.0typ.min.max.

Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,rG=7Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENERGYLOSSES[m

J]

0 10 20 30 40 50 60 70 80 90 1000

1

2

3

4

5

6

7

8

9

10

11Eoff

Eon

Ets

10


Rev.2.1,2016-02-05

Figure 13. Typicalswitchingenergylossesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,IC=50A,testcircuitinFig.E)

rG,GATERESISTOR[Ω]

E,S


J]

0 5 10 15 20 25 30 350

1

2

3

4

5

6

7

8Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(indload,VCE=400V,VGE=15/0V,IC=50A,rG=7Ω,testcircuitinFig.E)


E,S


J]

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0Eoff

Eon

Ets

Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(ind.load,Tj=175°C,VGE=15/0V,IC=50A,rG=7Ω,testcircuitinFig.E)


E,S


J]

300 350 400 450 500 550 6000.0

1.0

2.0

3.0

4.0

5.0

6.0Eoff

Eon

Ets

Figure 16. Typicalgatecharge(IC=50A)

QGE,GATECHARGE[nC]

VGE,G

ATE

-EMITTE

RVOLTAGE[V

]

0 50 100 150 200 2500

2

4

6

8

10

12

14

16120V480V

11


Rev.2.1,2016-02-05

Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APACITANCE[pF]

0 10 20 3010

100

1000Cies

Coes

Cres

Figure 18. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤400V,startatTj=150°C)


IC(SC) ,SHORTCIRCUITCOLLECTO

RCURRENT[A]

12 13 14 15 16 17 18 19 200

50

100

150

200

250

300

350

400

450

500

Figure 19. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE≤400V,startatTj≤150°C)


tSC,S

HORTCIRCUITW

ITHSTA

NDTIME[µs]

10 11 12 13 14 150

2

4

6

8

10

12

14

16

Figure 20. TypicalIGBTtransientthermalimpedance(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 11E-4

0.001

0.01

0.1 D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.012161983.3E-5

20.05421882.0E-4

30.068493042.3E-3

40.16872980.01219856

50.013158130.09700046

61.2E-31.874087

12


Rev.2.1,2016-02-05

Package Drawing PG-TO247-3

13


Rev.2.1,2016-02-05

t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

14


Rev.2.1,2016-02-05

RevisionHistory

IGW50N60TP

Revision:2016-02-05,Rev.2.1Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 - Release final datasheet

PublishedbyInfineonTechnologiesAG81726München,Germany©InfineonTechnologiesAG2016.AllRightsReserved.

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datasheet ig#50n60tp - mouser.mx · 3 igw50n60tp trenchstoptm performance series rev. 2.1,...

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