Open Access Tools
Two-Temperature Model
Simulation Setup
� Aluminum target
� Gaussian laser pulse, = 1064 nm�
� Normal incidence
� = 0.19 - 0.37 - 0.74 - 1.49 - 2.97 J/cm²�
� = 0.05 - 0.5 - 5 ps�
Example
IMD Results
VLL Results
IMD - Molecular Dynamics
� Open-access software [1]� FMQ Stuttgart
� ,� �ei e const.,
Simulation Details
� EAM-potential [2]� Ionization neglected in EAM potential� Input of absorbed energy from VLL� 20 nm x 20 nm lateral, periodic boundary� 400 ... 850 nm thickness� Computation time:
450 ... 700 ps x nm / day / CPU
VLL Virtual Laser Lab
� Online simulations [3]� RAS Moscow
� , wide-range model [4]� �ei e
� and from EOS [5,6]c ce i
Simulation Details
� Semiempirical multiphase EOS� Ionization considered in EOS� Computation of absorbed laser energy� 1D simulation� 1 mm bulk material� Computation time: < 2 minutes
References[1] J. Stadler et al., : 1131 (1997)Int. J. Mod. Phys. C 8[2] F. Ercolessi and J.B. Adams, Europhysics Letters : 583 (1994)26[3] M.E. Povarnitsyn et al., : 023110 (2012)Physics of Plasmas 19[4] M.E. Povarnitsyn et al., : 9480 (2012)Appl. Surf. Sci. 258[5] M.E. Povarnitsyn et al., : 235414 (2007)Phys. Rev. B 75[6] M.E. Povarnitsyn et al., : 5120 (2009)Appl. Surf. Sci. 255
Knowledge for Tomorrow
Institute ofTechnical Physics
Open Access Tools for the Simulation of Ultrashort-Pulse Laser Ablation
S. Scharring, D.J. Förster, H.-A. Eckel - DLR StuttgartJ. Roth - FMQ, University of StuttgartM. Povarnitsyn - Joint Institute for High Temperatures, RAS Moscow
35 l vacuum chamber
University of Stuttgart
BEP ApplicationSummary
EAM potential around normal state (IMD)vs. wide-range EOS (VLL)
��= 0.19 ... 0.37 J/cm²
IMD: lower �th (melt., ablation) than VLL
��= 0.74 ... 1.49 J/cm²
IMD: equiv. VLL, and�� T Te i higher than VLL
��= 2.97 J/cm²IMD: Ionization (VLL) vs. extreme (IMD)Te
-50 0 50 100 150 200 250
-10
0
10
20
30
40
50
Tim
et
[ps]
Position x [nm]
-50 0 50 100 150 200 250
-10
0
10
20
30
40
50
Tim
et
[ps
]
Position x [nm]
-50 0 50 100 150 200 250
-10
0
10
20
30
40
50
Tim
et
[ps
]
Position x [nm]
-50 0 50 100 150 200 250
-10
0
10
20
30
40
50
Tim
et
[ps
]
Position x [nm]
0.00
0.85
1.70
2.54
3.39
4.24
5.09
5.946.36
Ti[kK]
-50 0 50 100 150 200 250
-10
0
10
20
30
40
50
Tim
et
[ps
]
Position x [nm]
� [g/cm³]
0.00
0.41
0.83
1.24
1.65
2.07
2.48
2.893.10
0.00
0.97
1.95
2.92
3.89
4.87
5.84
6.817.30
Te[kK]
Te
Ti
Ti
�
�
10000 100000
0
10
20
30
40
50
60
70
80
90
100
1.49
1.49
1.49
1.49
1.49
1.49
0.740.740.74
0.370.37
Co
up
lin
gc
oe
ffic
ien
tc
m[µ
N/W
]
I ���0.5
[W s0.5
m-1]
IMD - 50 fs
VLL - 50 fs
IMD - 500 fs
VLL - 500 fs
IMD - 5 ps
VLL - 5 ps
0.37
-50 0 50 100 150 200 250
-10
0
10
20
30
40
50
Tim
et
[ps
]
Position x [nm]
Te
