fpgas 17-11-09

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    Introduction to programming

    technologies

    One of the first technique that allowed users to

    program their own devices was- and still is

    known as fusible-link technology.

    In this case the device manufactured with all

    of the links in place, where each link is

    referred to as a fuse.

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    Fusible Link technologies

    A simple programmable function

    Every Programmable function is implemented using

    Potential links

    Pull up resistors

    Input and output terminals

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    Un programmable fusible links

    In Un programmable fusible links uses the fuses aresimilar to the fuses you find in household products like a

    television. If anything untoward occurs such that the

    television starts consuming too much power its fuse will

    burn out.

    This results in an open circuit

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    Programmable Fusible Links

    Here programming is done by selectively removing the

    undesired fuses by applying pulses of relatively high voltage

    and current to the devices inputs.

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    The process of selectively removing the fuses is

    known as programming( but it may also referred to as

    burning or blowing)

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    Drawback

    Devices based on the fusible link technologies are

    said to be one-time programmable(OTP), because

    once a fuse have been blown it cant be and no going

    back..

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    Antifuse technology

    This Antifuse technology is an alternative to the fusible technology

    In which each configurable path has an associated link called Antifuse.

    In its unprogrammmed state Antifuse has high resistance that is considered

    to be an open circuit.

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    Programming an antifuse

    Antifuses can be selectively grown(programmed) by applying

    proper high voltages and currents to the device's inputs

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    The Polysilicon via converts insulation to conduction

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    These antifuses are also OTP devices

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    MASK PROGRAMMABLE DEVICES

    Electronic systems in general and computers in particular-

    make use of two major classes of memory devices: read-only

    memory (ROM) and random-access memory(RAM)

    ROM:

    1.nonvolatile

    .2.Other components in the system can read data from ROMdevices, but they cant write data into them.

    RAM:1. Volatile

    2.By comparison data can be both written into and read out ofRAM devices which are said to be volatile .

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    Basic ROMs are mask programmed

    Their construction by means of photo masking.

    Photo masking is used to create transistors

    and metal tracks

    ROM

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    The problems of Mask devices

    Creating the masks are very expensive

    They are useless, unless producing theextremely large quantities

    To overcome the above problem theyinvented programmable ROMs

    PROM, EPROM,EEP[ROM

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    PROM

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    Thses are used as memory devices

    Used to implement simple logics

    Cheap

    They designed using fusible and anti

    fusible technoilogies

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    EPROM

    Theses are also called as reprogrammable

    devices

    Being introduced by Intel in 1971

    Its structure is same as standard MOS

    transistor but with the addition of second

    polysilicon floating gate isolated by layers

    of oxide.

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    In its unprogrammed state , the floating

    gate uncharged and doesnt affect the

    normal operation of the control gate.

    Inorder to program the transistor , a

    relatively high voltage is applied b/w drain

    and gate

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    This 12V causes the transistor to be truned on

    and energetic electrons force their way through

    the oxide into the floating gate in a processknown as hot (high enery ) electronic injection.

    When the programming signal is removed a

    negative charge remains on the floating gate

    and it is stable and will not dissipate more than

    one decade under normal operations.

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    An EPROM is erased by discharging the

    electrons on that cells floating gate.

    The energy required to discharge the electrons

    by a source of ultraviolet (UV) radiation

    If the area smaller amd then density increases, alarger percentage of the surface of the die is

    covered by metal. This makes it difficult for the

    EPROM cells to absorb the UV light and

    increase the time.

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    EEPROM

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    The E2PROM transistor is same as

    EPROMtransistor in that it contains a

    floating gate , but the insulating oxide

    layers surroung this gate are very muchthinner.

    The second transistor used to erase the

    data.

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    FLASH based technologies

    A deThe name FLASH was originally

    coined to reflect this technologies rapid

    erasure times compared to EPROM

    It has two types of architectures .

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    In the first architecture using a singlefloating gate transistor cell with the samearea as an EPRM and thinner oxide like

    layer like EEPROM. SO theses devices can clearing large

    portions of the data.

    The other architecture uses two-transistorcell similar to EEPROM cell to erase wordby word,.

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    SRAM based technology

    RAMs are two types

    SRAM and DRAM

    DRAMs : In the case of DRAMs , each cell isformed from a transistor-capacitor pairthat

    consumes very little silicon material .

    The dynamic qualifier is used because thecapacitor loses its charge over time, so each cell

    must be periodically rechraged periodically to

    retain its data.

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    The output of the SRAM IS CONTROLED BY A

    CONTROL TRANSISTOR

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    Dis Advantage:

    1. It Uses significant amount of siliconbecause each cell comprises of four to six

    transistors 2. When power is removed the configured

    data will be lost.

    Advantage: Thhey can be programmed quickly and

    repeateadly as required.

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