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Silan 士兰微电子 Company Confidential, don’t copy 诚信 忍耐 探索 热情 Faith Endurance Exploration Enthusiasm Hangzhou Silan Microelectronics Co., Ltd www.silan.com.cn

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Page 1: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

Silan 士兰微电子

Company Confidential, don’t copy

诚信 忍耐 探索 热情Faith Endurance Exploration Enthusiasm

Hangzhou Silan Microelectronics Co., Ltd

www.silan.com.cn

Page 2: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Quality Control

Customer & Supplier

Product & Technology

Subsidiaries

Company Overview

Agenda

Page 3: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Mission

To be one of the most excellent semiconductor

devices and integrated circuits design and

manufacturing companies.

Page 4: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Profile

• Silan was founded in Oct.

1997 with head office in

Hangzhou, China.

• In March 2003, Silan made

an IPO as the first IC design

company on the Shanghai

Stock Exchange (SSE) .

• At the end of the third

quarter of 2010, Silan had a

total assets of more than

300M US$.

• The total share capital of

Silan amounted to 434.08

million shares.

• Engaged in semiconductor IC

design and manufacturing,

Silan provides high quality

ICs and semiconductor

devices to customers.

• During 13-year development,

Silan has become a

comprehensive company in IC

design, manufacturing and

marketing and joined the front

ranks of IC industry in China.

• Silan has become unique in

the high voltage &high power

special IC process developed

in IDM mode.

• Silan’s present three core

business:

ICs and discrete devices

based on Silan’s own special

process of high voltage, high

power and high frequency;

Digital audio/video SOC

based on Disc servo

technology;

High-brightness LED chips

and devices;

Page 5: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Location & Subsidiaries

Silan R&D Center in USA

Shenzhen ShenlanMicroelectronics

Silan Microelectronics (Korea office)

Silan Microelectronics (Taiwan office)

Silan Microelectronics(headquarters)

Silan-IC Co.,Ltd

Silan Azuer Co.,Ltd

Silan Test Factory in BinjiangYouwang Microelectronics

Chengdu

Hangzhou

Chengdu Silan Semiconductor Manufacturing Ltd

Page 6: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Milestones

Hangzhou Multi-Color Optoelectrical Co., Ltd was founded in July 2009 for LED packaging.

Silan Azure was founded in Dec. 2004 for high brightness LED manufacturing.The test factory in Binjiang was put into operation the same year.

Silan was founded in Sep.1997.

Silan completed a private placement of 30 million additional shares in Sep. 2010.

New fab of Silan Azure was completed In Oct.2007.

Silan-IC was founded in Jan. 2001.Start the silicon chip manufacturing.

Salan was founded in Jan. 2000.Expand South China and Hong Kong markets.

600460

Power module packaging was launched in Dec. 2010.

IPO initiated with A-stock in March 2003.

The foundation-laying ceremony of Chengdu SilanSemiconductor Manufacturing Ltd. was held at Chenddu Aba Industrial Park in Nov. 2010.

Page 7: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

StructureSilan Microelectronics Co.,Ltd

Power Management

& Driver

Digital Audio/Video

Video Surveillance

MCU

Mixed Signal and R.F.

Discrete Devices

ASIC Tech.

Digital Audio/Video

Product

Image Processing

MCU R&D

Mixed Signal Tech.

SOC Embedded

Software

Back-end Design Tech.

Processor Tech.

Test Verification Tech.

Shenzhen Sale (I)

Shenzhen Sale (II)

Shenzhen Sale (III)

Shenzhen Sale (IV)

Shenzhen Sale (V)

Hangzhou Sale (I)

Device Dept.

Wafer Test Dept.

Final Test Dept.

Test Technology

Development Dept.

Quality Management

Product Line R&D Dept. Sale Dept.Test factory in

Binjiang

Management Dept.

R&D Management

Main subsidiariesSilan-IC

Silan Azure

Production Management

Sale Management

Sale Overseas

Page 8: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Wafer fab

Wafer manufacturing base in Xiasha includes Silan-IC wafer fabs and Silan Azure LED

manufacturing fab

Silan-IC cover area: 125,400 M2 for three wafer

fabs

Silan Azure cover

area: 50000 M2

Running Building Under Planning

2

3 4

5

No. 10 Road

No. 1

9 R

oad

FAB 3

Building

110 KVSubstation

6

Under Planning

FAB 1

RunningFAB 2

Running

21

LED chip FABRunning

Page 9: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Silan-ic (wafer fab)

• Located in Hangzhou Xiasha Economic and

Technology Development Area;

• Founded in Jan. 2001, and the first wafer fab line

(Fab 1) began to be built in May;

• Fab 2 began to run in Oct. 2005;

• Total investment has reached over RMB800 million

at the end of 2009.

• 1# clean-room: 3600 M2;

• Process: 1.5-3.0µm bipolar and bipolar based

discrete device process;

• Production capacity: 85000 pcs per month (will

expand to 110k pcs).

• 2# clean-room: 7000 M2;

• Process: 0.6-0.8µm BiCMOS/ BCD/ VDMOS, etc;

• Production capacity: 35000 pcs per month(will

expand to 90k pcs).

• 3# clean-room: Began to be built in Oct. 2010,

10000 M2 in plan for 8-inch wafer fab.

Page 10: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

• Silan chengdu manufacturing factory is located in Chengdu-Aba Industrial, where is about a 50-minute drive away

from Chengdu Shuangliu Airport;

• Cover a total area of 310,770 M2, with the first phase of about 73,000 M2 started building in Nov. 2010;

• It will run in fourth quarter of 2011 and plan for the following businesses:

(1)ICs and power devices manufacturing (2)High-brightness LED chips manufacturing

(3)Power module packaging (4)LED product and component packaging

First phase construction of Chengdu Silan Semiconductor Manufacturing Ltd.

Slian Chengdu manufacturing factory

Page 11: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Silan Azure (LED chip)

With 800KK/Month production capacity

12 MOCVDs are provided

Green LED Chip Blue LED Chip Red LED Chip

• Special located in the design and manufacturing of GaN high-

brightness R/G/B LED chips;

• Total investment has reached RMB 700 million;

• High-quality LED ICs are well received by our customers and widely

used in large LED screen;

• Continuously explore the LED illumination applications.

Page 12: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

• Multi-color is engaged in full color R/G/B LED chips packaging. The products have

been used in large display screen at Tiananmen Square and already accepted by

high-end customers at home and abroad;

• Each package capacity for lamp and SMD is 30KK/month;

• Features:

(1) No attenuation: 30mA, 25 ℃, 1000 hours aging, attenuation<5%;

(2) Good light-type: smooth light-type, RGB light relative to light distribution is

controlled within 10%;

(3) High reliability: failure rate less than 0.003 percent ;

(4) Brightness Uniformity: 1 : 1.1 classified;

(5) Color consistency: classified every 3nm wavelength.

Multi-color (LED packaging)

Page 13: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

R&D center

Back-end Design Tech.

Technology Departments Management Structure Product Lines

R&D management Dept.

Image Processing

Mixed Signal Tech.

Digital Audio/Video Product

MCU R&D

ASIC Tech.

Test Verification Tech.

SOC Embedded software

Processor Tech.

Video Surveillance

Mixed Signal & R.F.

Consumer ICs

MCU

Discrete Devices

Digital Audio/Video

Power Management & Driver

• The R&D Center employs talented professionals and has formed a group with more than

250 design engineers, 100 of which hold a Master’s or Doctor’s degree.

• Silan is constructing a R&D platform for both technology and product, during which we

will take advantage of our technical priority and improve management.

Based on the Integrated Products Development (IPD) system, Silan

R&D Center uses an effective matrix organization to separately

develop various aspects of IC technology. We emphasize the

accumulation of core technology, and re-usable IP core.

Page 14: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Core technology

• Based on continuous technology accumulation, Silan is able to design complex SOC (system on

chip) ICs and has the ability to offer total system solutions (including system solution, software

and IC) to our customers.

Core technology

R.F/Analog Tech.

Audio/Video Tech.

MCU/DSP Product

Platform

BiCMOS/BCD Process Platform

Discrete Device

Power Management

Platform

Page 15: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Research on High Voltage Special Process

• Because the high voltage process and product platform development is a very

complex activity involving a wide range of technical inputs, Silan insists on the R&D

in the following aspects:

Device structure research,Model parameter design environmentbuilding

Process platform constructing

Application system research

Quality evaluation system

Circuit design validation

Package tech. research

Page 16: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Road map of wafer fab process

2µm 600V high voltage IC process(for high voltage driver)

2007 2008 2009 2010 2011

HV BCD

LV BCD

BiCMOS

Bipolar

SBD

FRD

IGBT

HV MOSFETS-Rin

TMstructure

F-CellTM

structure

First generation super-junction MOSFET of Silan

600V planar PT-IGBT

1200V grooved-gate NPT IGBT

200V-600V planar FRD

800V-1200V planar structure FRD

40V-200V common SBD

1.5µm high voltage bipolar process

600V planar SBD

Super-junction SBD

Trench SBD with large current

0.8µm complementary bipolar process

0.8µm 9V BiCMOS process0.8µm high frequency BiCMOS process

0.8µm 25V BiCMOS process0.6µm BiCMOS process

0.8µm complementary 25V BCD process

0.8µm 50V BCD process 0.8µm 100V BCD process

0.8µm 75V BCD process 0.6µm BCD process

1µm 600V high voltage IC process2µm 1200V high voltage IC process

1µm 600V high voltage BCD process Built-in

600V high power lateral super junction MOS

Page 17: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Product line

Power Management & Driver

Strategy

Based on advanced BCD/high-voltage IC process of Silan,

develop green power products with high efficiency and low

standby power dissipation, LED illumination driver, DC

variable-frequency motor driver with Silan’s advanced

power and motor driver structure.

Category

• AC-DC converter

• DC-DC converter

• LED driver

• DC brushless motor driver

• Digital audio power amplifier

Page 18: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Product line

Mixed Signal and R.F.

Strategy

Develop high integration and high cost-performance toy

remote control IC with R.F., MCU and power driver

functions.

Based on high-frequency BiCMOS process of Silan-IC,

develop high-frequency tuner IC used in set-top box and

digital TV.

Category• High integration toy remote control IC

• Remote control codec IC

• Video processing IC

• High-frequency tuner IC

Page 19: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Product line

Digital Audio/Video

StrategyDevelop SOC products based on disc servo/digital audio

/video decode technology; and expend its business in

segment market with the high cost-performance

application solutions .

Category• CD servo IC and system solution

• MP3/WMA digital audio decoder and system solution

• CHD-15 red light high-definition digital media player

and system solution

Page 20: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

MCU

Strategy Based on 4-bit/8-bit MCU, develop MCU products for

household appliances control.

Category• Audio system control IC

• Household appliance control IC

• Programmable remote control IC

Product line

Page 21: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Product line

Video Surveillance

StrategyDevelop high integration multi-channel H.264 video

encoder with high cost-performance and provide digital

video surveillance solutions for customers.

Category • Multi-channel video Encoder

• Single-channel video SOC

Page 22: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Product line

Discrete Device

StrategyBased on the advanced process of Silan fab line and

powerful production capacity, develop various

semiconductor discrete devices and provide best service

for our customers.

Category

• High Voltage MOSFET

• Schottky Diode

• Current Regulative Diode

• Fast Recovery Diode

• TVS&ESD Protection Diode

• Switching Diode

• Zener Diode

Page 23: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Market Ratio Product Ratio

LDO:42%

AC-DC:27%

DC-DC:15%

Others:16%

Product Ratio Of

Power Management & Driver

Million U.S. $Calculated at current exchange rates

Revenue

20

40

60

80

100

120

140

160

180

200

220

240

260

1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008

7761

2011

Anticipation280

2009

141

2010

110

127134

224

Page 25: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Subcontractors

Assembly Factory Wafer Foundry

Page 26: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Quality control

Continuous quality improvement for the high quality standard in the whole world.

Careful and precise product failure analysis flow.

Mature product function parameters and quality control system for product preparation before it is put into use.

Consider the customer’s strict requirements for the quality as the chance and challenge of improving Silan’s quality control.

Has been authorized ISO9001 quality certification//ISO14001 environmental management system and SONY GP certification.

Page 27: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Support

Customer

Customer support

/sale/product application

engineer

Q R A

Sale manager

Product managerSale engineer

Design engineer

Product engineerSilan foundry Supplier

Finish in 5

workdaysImmediate

Response

Actual average 4.13 days in 2010!

Page 28: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Audits of Customers and Partners

Customer Approval

Received Date Authorizer Certification No. or Code

ECO partner 2007-07-01 Samsung D6C3 SLHK Limited

/ 2010-06-03 LG Innotek /

/ 2010-06-28 Osram ZSIN

/ 2010-08-05 EXAR /

/ 2010-08-18 FSP /

/ 2010-08-20 Panasonic /

/ 2010-09-14 SEMCO /

/ 2010-09-15 Hisense /

/ 2010-09-20 DVE /

SONY GP 2010-10-05 Sony SOEM12104

Page 29: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

QRA quality certificate

SILAN certified by CQMfor ISO9001:2008

SILAN certified by CQM for ISO14001:2004

SILAN certified by SONY GP

Page 30: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Failure analysis

Acquisition of

failure information

Failure analysis report

• Hand test

• Auto test

• X-ray

• Ultrasonic inspection

• Die surfacedefect inspection

• Bonding defect inspection

• Microscope • Scanning Electron

microscope

• Liquid analysis

• Photonic analysis

• Dry etching

• Wet etching

• Manual probe test

• Aggregation particle

number analysis

Appearance

InspectionOpen/short

UI-JT test

Electrical

Characteristics Test

Non-destructive

Package Inspection

Decap

Internal

Inspection Failure Position Delayer Failure Analysis

Failure Mechanism

Page 31: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Test

For the important quality control during IC design and

manufacture, Silan has the considerable ability in wafer and

IC final testing. At present, more than ten thousand wafers

and tens of millions of ICs can be tested per month.

The well controlled test system guarantees the product

quality and meets the requirements of the increasing

production capacity.

Page 32: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Test equipment design

Automatic test handlers of different types are

manufactured for final testing ICs with different

packages of DIP, SIP, SOP, TO-92, TO-220,

and QFP, etc.

The technology of all above test equipments

has reached the domestic leading level, and

we have used more than 200 sets in

production line.

Besides IC design, Silan also

has the ability to self-design

the test equipments. Now, the

second generation of discrete

device test system, analog IC

test system and the third

generation of digital IC test

system are in mass production.

In addition, the new generation

mixed signal test system M800

with high performance has

been successfully designed

and put into use.

Page 33: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

Offer attractive, value-added products and services

Create wealth through hard work, and contribute to

benefit the community

Provide individual development and

prosperous career opportunities

Maximize return on investment and

ensure a bright long term future

为客户

For Staff For Shareholder

For Customer

For Society

Page 34: Hangzhou Silan Microelectronics Co., Ltdsewonsemi.com/upload/회사소개서.pdf · 1.5µm high voltage bipolar process 600V planar SBD Super-junction SBD Trench SBD with large current

© 2011 Hangzhou Silan Microelectronics CO.,LTD. All rights reserved.

http://www.silan.com.cn