S

D

G

Parameter Typ. Max. UnitsRJC Junction-to-Case 3.3RJA Case-to-Ambient (PCB mount)** 50 C/WRJA Junction-to-Ambient 110

Thermal Resistance

VDSS = 30V

RDS(on) = 0.045ID = 23A

12/6/04

www.irf.com 1

D-PakTO-252AA

I-PakTO-251AA

Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2703) Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance persilicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a widevariety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, orwave soldering techniques. The straight lead version (IRFU series) is forthrough-hole mounting applications. Power dissipation levels up to 1.5 wattsare possible in typical surface mount applications.

!"#$!"##!%&'((

Parameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 23 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 16 AIDM Pulsed Drain Current 96PD @TC = 25C Power Dissipation 45 W

Linear Derating Factor 0.30 W/CVGS Gate-to-Source Voltage 16 VEAS Single Pulse Avalanche Energy 77 mJIAR Avalanche Current 14 AEAR Repetitive Avalanche Energy 4.5 mJdv/dt Peak Diode Recovery dv/dt 5.0 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )C

Lead-Free

2 www.irf.com

S

D

G

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode)

showing theISM Pulsed Source Current integral reverse

(Body Diode)

p-n junction diode.VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 14A, VGS = 0Vtrr Reverse Recovery Time 65 97 ns TJ = 25C, IF = 14AQrr Reverse RecoveryCharge 140 210 nC di/dt = 100A/ston Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

23

96

&

VDD = 15V, starting TJ = 25C, L =570H RG = 25, IAS = 14A. (See Figure 12)

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

Pulse width 300s; duty cycle 2%.

This is applied for I-PAK, LS of D-PAK is measuredbetween lead and center of die contact. Uses IRL2703 data and test conditions. ISD 14A, di/dt 140A/s, VDD V(BR)DSS,

TJ 175C

Notes:Caculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A.

Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250AV(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.030 V/C Reference to 25C, ID = 1mA

0.045 VGS = 10V, ID = 14A 0.065 VGS = 4.5V, ID = 12A

VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250Agfs Forward Transconductance 6.4 S VDS = 25V, ID = 14A

25A

VDS = 30V, VGS = 0V 250 VDS = 24V, VGS = 0V, TJ = 150C

Gate-to-Source Forward Leakage 100nA

VGS = 16VGate-to-Source Reverse Leakage -100 VGS = -16V

Qg Total Gate Charge 15 ID = 14AQgs Gate-to-Source Charge 4.6 nC VDS = 24VQgd Gate-to-Drain ("Miller") Charge 9.3 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time 8.5 VDD = 15Vtr Rise Time 140 ns

ID = 14Atd(off) Turn-Off Delay Time 12 RG = 12, VGS = 4.5Vtf Fall Time 20 RD = 1.0, See Fig. 10

Between lead,6mm (0.25in.)from packageand center of die contact

Ciss Input Capacitance 450 VGS = 0VCoss Output Capacitance 210 pF VDS = 25VCrss Reverse Transfer Capacitance 110 = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25C (unless otherwise specified)

nH

IGSS

S

D

G

LS Internal Source Inductance 7.5

RDS(on) Static Drain-to-Source On-Resistance

LD Internal Drain Inductance 4.5

IDSS Drain-to-Source Leakage Current

www.irf.com 3

Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

1

10

100

1000

0.1 1 10 100

I ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

D

V , Drain-to-Source Voltage (V)DS

A

20s PULSE WIDTH T = 25CJ

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V

2.5V

0.1

1

10

100

1000

0.1 1 10 100

I ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

D

V , Drain-to-Source Voltage (V)DS

A

20s PULSE WIDTH T = 175C

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V

2.5V

J

0.1

1

10

100

2 3 4 5 6 7 8 9 10

T = 25CJ

GSV , Gate-to-Source Voltage (V)

DI ,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

T = 175CJ

A

V = 15V 20s PULSE WIDTH

DS

0.0

0.5

1.0

1.5

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

JT , Junction Temperature (C)

R

, D

rain

-to-

Sou

rce

On

Res

ista

nce

DS

(on

)(N

orm

aliz

ed)

V = 10VGSA

I = 24AD )*&

4 www.irf.com

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

0

200

400

600

800

1000

1 10 100

C, C

apac

itanc

e (p

F)

DSV , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHzC = C + C , C SHORTEDC = CC = C + C

GSiss gs gd dsrss gdoss ds gd

Ciss

Coss

Crss

0

3

6

9

12

15

0 4 8 12 16 20

Q , Total Gate Charge (nC)G

V

, G

ate-

to-S

ourc

e V

olta

ge (

V)

GS

A

FOR TEST CIRCUIT SEE FIGURE 13

V = 24VV = 15V

I = 14A

DS

DS

D

1

10

100

0.4 0.8 1.2 1.6 2.0 2.4

T = 25CJ

V = 0VGS

V , Source-to-Drain Voltage (V)

I

, Rev

erse

Dra

in C

urre

nt (

A)

SD

SD

A

T = 175CJ

1

10

100

1000

1 10 100

V , Drain-to-Source Voltage (V)DS

I ,

Dra

in C

urre

nt (

A)

OPERATION IN THIS AREA LIMITED BY R

D

DS(on)

10s

100s

1ms

10ms

A

T = 25CT = 175C Single Pulse

CJ

www.irf.com 5

Fig 10a. Switching Time Test Circuit

VDS

90%

10%VGS

td(on) tr td(off) tf

Fig 10b. Switching Time Waveforms

+

1 0.1 %

+

, - .

/+

+-+

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)1

thJC D = 0.50

0.010.02

0.05

0.10

0.20

SINGLE PULSE(THERMAL RESPONSE)

A

The

rmal

Res

pon

se (

Z

)

P

t2

1t

DM

Notes: 1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

25 50 75 100 125 150 1750

5

10

15

20

25

T , Case Temperature ( C)

I ,

Dra

in C

urre

nt (

A)

C

D

LIMITED BY PACKAGE

6 www.irf.com

QG

QGS QGD

VG

Charge

D.U.T.VDS

IDIG

3mA

VGS

.3F

50K.2F12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01tp

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20V

0

40

80

120

160

25 50 75 100 125 150 175

J

E

,

Sin

gle

Pul

se A

vala

nche

Ene

rgy

(mJ)

AS

A

Starting T , Junction Temperature (C)

V = 15V

ITOP 5.7A 9.9ABOTTOM 14A

DD

D

www.irf.com 7

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

Fig 14. For N-Channel HEXFETS

+0/+"1$!12,2!

+

23!45 ,25#, - . 6!45,5!, , - . ,2!-.

!15 17856!! 1719$6!!."

8 www.irf.com

12IN THE ASSEMBLY LINE "A"ASSEMBLED ON WW 16, 1999

EXAMPLE:WITH ASSEMBLYTHIS IS AN IRFR120

LOT CODE 1234

YEAR 9 = 1999DATE CODE

WEEK 16

PART NUMBER

LOGO

INTERNATIONALRECTIFIER

ASSEMBLYLOT CODE

916A

IRFU120

34

YEAR 9 = 1999

DATE CODE

OR

P = DES IGNATES LEAD-FREEPRODUCT (OPT IONAL)

Note: "P" in assembly line pos itionindicates "Lead-Free"

12 34

WEEK 16A = ASSEMBLY S ITE CODE

PART NUMBER

IRFU120

LINE A

LOGO

LOT CODEASSEMBLY

INTERNATIONALRECTIFIER

www.irf.com 9

ASSEMBLY

EXAMPLE:WITH ASSEMBLYTHIS IS AN IRFU120

YEAR 9 = 1999DATE CODE

LINE AWEEK 19

IN THE ASSEMBLY LINE "A"ASSEMBLED ON WW 19, 1999LOT CODE 5678

PART NUMBER

56

IRFU120

INTERNATIONAL

LOGORECT IFIER

LOT CODE

919A

78

Note: "P" in assembly line position indicates "Lead-Free"

56 78

ASSEMBLYLOT CODE

RECTIFIERLOGO

INTERNATIONAL

IRFU120

PART NUMBER

WEEK 19

DATE CODE

YEAR 9 = 1999

A = ASSEMBLY S ITE CODE

P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL)

10 www.irf.com

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/04

TR

16.3 ( .641 )15.7 ( .619 )

8.1 ( .318 )7.9 ( .312 )

12.1 ( .476 )11.9 ( .469 )

FEED DIRECTION FEED DIRECTION

16.3 ( .641 )15.7 ( .619 )

TRR TRL

NOTES :1. CONTROLLING DIMENSION : MILLIMETER.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/