laser-produced plasma source for euv lithography...1 1 euva / komatsu ltd., 2 euva / gigaphoton...

1

1 EUVA / Komatsu Ltd., 2 EUVA / Gigaphoton Inc., 3 Gigaphoton Inc.

International EUVL SymposiumOctober 19, 2009

Prague, Czech Republic

Laser-produced plasma source for EUV lithography

Hakaru Mizoguchi3, Akira Sumitani1, Hiroshi Komori1, Tamotsu Abe1, Yukio Watanabe1, Takanobu Ishihara1, Tsukasa Hori1, Kouji Kakizaki1, Junichi Fujimoto2,

AcknowledgmentsThis work was partly supported by the New Energy and Industrial

Technology Development Organization -NEDO- Japan.

Introduction - EUVA project- Concept of Gigaphoton LPP source

ETS (1st generation integrated system) Experiment - Configuration- Latest data- Status summary of ETS experiment

HVM EUV light source product specification and roadmap

Summary

OutlineOutline

2009 EUVL Symposium P2




Summary

OutlineOutline


1st Mid term2004/9

2nd Mid term2006/3

EUVA Final2008/3

HVM source-12010

planningEUV Power (IF)

StabilityLaser

Laser freq.CE (source)

Target

5.7W 1)

---YAG:1.5kW

10kHz0.9%

Xe-Jet

10W 1)

<±10%CO2:2.6kW

100kHz0.9%

SnO2 choroid liquid jet

50W 2)

<±5%CO2: 7.5kW

100kHz2.5%

Sn-Droplet

110W 2) /140W 3)

3<±0.3%CO2: 10kW

100kHz4%

Sn-Droplet

EUVA Project

Technology for <10WTechnology for <10WNd:YAG Laser, Liquid Xe jet

Technology for 115Technology for 115--200W200WCO2 Laser, Sn droplet target

Magnetic field mitigationNote）Primary source to IF EUV transfer efficiency：1) 43% 2) 28% with SPF3) 36% without SPF

EUVA project-1 EUVA project-2


Concept of Gigaphoton LPP Source

Original technologies① CO2 laser and Sn LPP source② Magnetic field plasma guiding ③ High power pulsed CO2 laser

High EUV power >115 W EUV Stability Collector mirror lifetime Low CoG / CoO

Requirement for EUV source for HVM

デブリミティゲーション用マグネット①

デブリミティゲーション用マグネット②

中間集光点（IF)

Snドロップレット生成器

Sn回収装置

CO2レーザ

プラズマ

Plasma guiding Magnet

Sn supply

EUV Collector

CO2 laser

Plasma

Sn collector

IF

High power pulsed CO2 laser

High power pulsed CO2 laser


① CO2 Laser and Sn LPP source Double pulse laser plasma enhance Ce

YAGCO2

● CO2 laser + SnCreate EUV light with essentially high efficiency.

Theoretically 8% is feasible.

(Gigaphoton original 2002)

● Double pulse LPPEnhance conversion efficiency.

Also ionization efficiency enhanced, therefore clean plasma quality will be realized.



52.5°

② Magnetic field plasma guiding

No deposition

No deposition

No deposition

Low Deposition

Erosion

22.5°

7.5°

CO2 laser

0°

Sn target

Dendolite formation

● Mirror protectionFirst energy ion is perfectly shielded by strong magnetic field.


● Clean OperationSn debris is guided to plasma collector.

Not only C1 mirror but also EUV chamber maintain clean operation.



③ High power pulsed CO2 laser

● High power pulsed CO2 laserCombination of short pulsed high rep. rate Osc. and Industrial CW CO2 laser.






Summary

OutlineOutline


ETS Experiment

1st generation integrated LPP system

Demonstration of 100W (av.75W) operation Prove system concept with real data with integrated system

Pre-pulse target heating Mass limited target Magnetic mitigation Mirror cleaning

Clarify the engineering issues of component and find solution CO2 laser EUV chamber (mirror, droplet gen., etc.)

Feedback engineering data to GL100E


ETS System Configuration

■ EUV chamber

System layout


ETS EUV Chamber ConfigurationETS EUV Chamber Configuration


New Droplet Generator

Video Droplet for ETS-2Diameter: 60um Stability : ±13umVelocity: 60m/sFrequency: 400kHz

Good stability is realized


Stability data

-100-80-60-40-20

020406080

100

0 1 2 3 4 5 6 7 8 9 10 11

Time [min]

X-P

osit

ion

[um

]

target

-100-80-60-40-20

020406080

100

0 1 2 3 4 5 6 7 8 9 10 11

Time [min]

Z-P

osit

ion

[um

]

target

Direction X Direction Z

Stability satisfy the target spec.


Latest ETS operation data (10%/20% duty)

Video of EUV plasma (20%duty)

Output data (10% duty) Short term Burst mode stability Middle term Long term


With Droplet position controlw/o Droplet timing controlw/o Energy control

Laser power 5kWDuty 20%

Burst ON 200msecBurst OFF 800msec

EUVEUV Plasma observation Plasma observation (V(Videoideo))


1. Average power (@I/F) 2.5W2. Brightness (@I/F) 25W3. Duty cycle 10% (ON/OFF=20ms/180ms)3. Max. non stop operation time 3 hr4. Experiment time 7 hr5. Average CE 1.5%

System operation Data (1) System operation Data (1) -- Short term dataShort term data--

1msec average/point

Droplet diameter 60μmCO2 laser power 5kW

200 sec

Short term output data


Short term output data (envelope)

0

0.05

0.1

0.15

0.2

0.25

0.3

0 100 200 300 400 500 600 700 800 900 1000

Number of pulses [x2]

EUV

ener

gy [a

.

•Laser power 5kW•CE=1.5%•Duty 10%

•Burst ON 20msec•Burst OFF 180msec

1msec average/point

System operation Data (2)System operation Data (2)

200 sec

w/ Droplet position controlw/o Droplet timing controlw/o Energy control


Burst stability data

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0 200 400 600 800 1000 1200 1400

Number of pulses [x2]

EUV

ener

gy [a

.u.]

　　　＿

50-burst

20 msec

moving average/point

System operation Data (3)System operation Data (3)


Long term operation

w/ Droplet position controlw/o Droplet timing controlw/o Energy control

00 .0 10 .0 20 .0 30 .0 40 .0 50 .0 60 .0 70 .0 80 .0 9

0 .1

0 5 0 0 1 0 0 0 1 5 0 0 2 0 0 0 2 5 0 0 3 0 0 0 3 5 0 0 4 0 0 0 4 5 0 0 5 0 0 0

N u m b e r o f p u ls e s

EU

V e

nerg

y [a

.u.]

00 .0 10 .0 20 .0 30 .0 40 .0 50 .0 60 .0 70 .0 80 .0 9

0 .1

0 5 0 0 1 0 0 0 1 5 0 0 2 0 0 0 2 5 0 0 3 0 0 0 3 5 0 0 4 0 0 0 4 5 0 0 5 0 0 0N u m b e r o f p u ls e s

EU

V e

nerg

y [a

.u.]

00 .0 10 .0 20 .0 30 .0 40 .0 50 .0 60 .0 70 .0 80 .0 9

0 .1

0 5 0 0 1 0 0 0 1 5 0 0 2 0 0 0 2 5 0 0 3 0 0 0 3 5 0 0 4 0 0 0 4 5 0 0 5 0 0 0

N u m b e r o f p u ls e s

EUV

ener

gy [a

.u.]

START

30min

60min

System operation Data (4) System operation Data (4) -- Long term Long term --

•Laser power 5kW•CE=1.5%•Duty 10%

•Burst ON 20msec•Burst OFF 180msec


Fragments

Neutral atoms Ions

Peak velocity angular distribution

Velocity distribution

Sn Debris issueNow correcting debris mitigation data

of ETS !


Smaller droplet development (for next step)Mass limited target is essential for small debris!

Size : 47um 44um 41um 28um 19um < 10um

Freq. : 92kHz 112kHz 142kHz 320kHz 500kHz

Spacing : 176um 146um 115um 65um 44um


Ions

Neutral atoms

Fragments

Magnetic Mitigation

Mass limitedTarget

C1

Mirr

or

Leakage

Cle

anin

g

Sn mitigation strategyIntegrate new technologies

Mass limited target and Cleaning technology into ETS is our major concern !


Status summary of ETS Experiment

General Information Performance at Plasma Integrated Performance Performance

Projections

Supplier Type Demonstrated operating time

AverageEUV

power in 2πat plasma

(measured)

Level of integration

Demonstrated operating time

AverageEUV

power at IF

Projected average EUV power at IF by mid-year

2010

Projected average EUV power at IF by year-end

2010

GigaphotonKomatsuEUVA

SnLPP

3 hours

@ 10% duty cycle

7.5W

@ 10% duty cycle

With dropletsNo integratedSource

3 hours

@ 10% duty cycle

2.6 W

(calculated)

75 W

(Burst 100W @ 75% duty cycle)

100 W

(Burst 100W @ 100% duty cycle)

(13,October 2009)


Ave.

0.1

1

10

100

1000

Oct-06 Feb-08 Jul-09 Nov-10 Apr-12 Aug-13 Dec-14 May-16

Date

Ave

rage

EU

V po

wer

@ IF

[W]

_

Ave.

Average power improvement chart (scheduled)

Climbing up the average power cliffvery rapidly




Summary

OutlineOutline


EUV Light Source Major Specifications

Power W 100 >100 >200 >400Pulse energy mJ 1 >1 >2 >4Max rep rate kHz 100 100 100 100Max Duty Cycle % 75 >75 >75 >75Sub systemsTarget Material and Shape Sn droplet Sn droplet Sn droplet Sn dropletDroplet Diameter micro meter 60 10 10 10

Debris Mitigation Magnet andcleaning

Magnet andcleaning

Magnet andcleaning

Magnet andcleaning

Collector Mirror Lifetime Bpls 11 >200 >1250 >1250Tool Interface No Yes Yes Yes

EUV model ETS GL400EGL100Eproto GL200E


EUV Light Source Roadmap


Power

>400W

>200W

>100W

100W

2014 201520132010 201220112009

ETS

GL200E

GL400E

GL100E proto

GL100E

Cleanroom floor

Subfab

Source

Scanner

Layout of GL-100E

preliminary





Summary

OutlineOutline


Summary

ETS-2 (1st generation integrated setup LPP source) Design concept is reported. Droplet generator works very stable. First operation data is reported.

Short term Stability at Burst operation Long term

Debris mitigation data is now under correction. Average power status and schedule is summarized.

Product roadmap Target specification and schedule of Gigaphoton LPP source product

is updated. Now GL-100E is under development.


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laser-produced plasma source for euv lithography...1 1 euva / komatsu ltd., 2 euva / gigaphoton...

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