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Report on OVP-GaN Testing

ByCarl XH Li (GaNPowerSemiconductor (Foshan) Ltd.)Simon Li (GaNPowerInternational Inc.)

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VPOVP-IC

D

S

Gi

Ig(ref)

MonolithicIntegration

GaNPower New Product: GaN EHEMT with Integrated Over-Voltage Protection Circuit

Go

Vgo (V)

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S

CO.34x45

K=2.74mm

b e

D2

E2

L

D

E

D=8; E=8; e=1.95; b=0.97;L=0.57; D2=6.82; E2=3.19

8LEAD DFN (8x8x0.75mm,Pitch 1.95mm) IMPORTANT:Please connect the bottom thermal pad to the source electrode on PCB

14

5 8

Pin 8

Top view Bottom view

Thermal pad and pin 1 are source; Pin 2 is sensing source; Pin 3 is GO (OVP-gate); Pin 4 is gate; Pins 5 to 8 are drain

DFN8x8-OVP. Suggested driving range G: 5-6V; GO: 5-15V, protection > 30V

D D D D

G GO SS S

Source/Thermal PAD

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White68n

Red1u

Red220p

Double pulse unclamped inductive switching (UIS) testing at 10V driving pulses.

Vd testing pointId probe

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Experimental• A general purpose power supply PCB were used with 8x8 DFN foot print

compatible with GaNPower OVP-GaN device (product ID GPI60515DSOVP).• A RIGOL DG1022U Waveform Generator were used as a driver to provide a

maximum of 10V driving to Go lead of the OVP-GaN device. 10V double pulse equivalent to 100kHz were used to perform the experiment.

• A CYBERTEK CP8050A Current Probe were used to provide drain current measure for the low-side GaN device.

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L1200uH

GaN1 (hi-side)

Vin (450V)

GaN2 (lo-side)

Ground

Ground

220pF1uF68nF

OVP-Vg inputTo wave generator

Vd testing point

Id probe

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Measurement Summary

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Waveforms

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Waveforms

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Waveforms

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Waveforms

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Waveforms

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Waveforms

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Conclusions

• Double pulse testing with unclamped inductive load has been succefully demonstrated for GaNPower’s OVP-GaNdevices up to 450V (limited by HV capacitor) and 24A.

• GaNPower’s OVP-GaN device not only provides over-voltage protection but also enables larger gate driving voltage up to 15V.

• Under hard-switching condition, it is important to protect the low-side GaN switch using a filtering capacitor.

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