Texas InstrumentsReliable Harsh Environment Electronics

for the Global Market

James F. Salzman and Bruce Holcombe

22st Microelectronics Workshop

James F. Salzman

Agenda

• The Need for Reliable Space Products– Satellite Failures– Product Up-Screening issues

• Understanding Reliability for Space Products– Bathtub Reliability Curve – Extrinsic & Intrinix mechanisms

• TI HiRel Division Overview• Product Roadmaps• Extreme Temperature Operation• Summary

James F. Salzman

Newspaper Headlines

Jan 15, 2009 - Engineers are trying to determine what happened to the telecommunications satellite Astra 5A, which inexplicably failed on Jan. 15 after 12 years of operation. The satellite has since been adrift in space, moving out of its geostationary position about 22,300 miles (35,888 km) above Earth and is moving eastward along its orbital arc.

Mar 7, 2009 - The reason for the loss of the satellite, experts confirmed, was a failure of its electronic components. And the so-called electronic-component base constituted the basis of this spacecraft. The loss of the satellite reminded specialists of a two-year-old story. ... Low-quality components said to be the cause of Russian satellite failure -

Mar 20, 2009 - ... ... the in-orbit satellite failure of the Coast Guard demonstration or the quick-launch satellites, satellite launch and construction delays and cost overruns and in-orbit satellite failures or reduced performance; the failure of our system or reductions in levels of service due to faulty components ...

Satellite Failure Rate ~ 20/year

Sept 1, 2009 The Indian space agency has announced that it lost contact with its lunar orbiterChandrayaan-1 on Saturday last week. The mission, which has achieved most of its scientific objectives, carried three European instruments. Radio contact with Chandrayaan-1 was lost at 22:00 CEST on 28 August

Aug 08, 2009 NASA’s Mars Reconnaissance Orbiter is in safe mode, a precautionary standby status, and in communications with Earth after unexpectedly switching to its backup computer on Thurs. Aug. 6. This is the fourth computer shutdown on the Mar’s Reconnaissance Orbiter this year

Satellite Grim Reaper

James F. Salzman

Typical Up Screening to QMLV flow by some Suppliers

Obtain die fromvarious sources

Radiation Test &Ceramic package

Up-Screeningas Required Sell to end User

• Typically Fab less• No process information• Unknown design rules• Unknown heritage• Unknown future

• Unknown FIT Mechanisms• NBTI• TDDB• CHC• Metal Migration• Etc.

• Out sourced to 3rd Party• May use several vendors• Relies on 3rd party quality• Lack of process information• Lack of Wafer Level Reliability• Lack of package Thermal Analysis

• Typical Lack of experience• Limited product information• Limited Destructive Physical Analysis Size• Lack of full time reliability Engineer• Commercial die reliability ~ 10 years

• Questionable Product• Lack of Ownership

James F. Salzman

The Reliability Bath Tub Curve

Time

Failu

reR

ate

Time

Failu

reR

ate

Extrinsic failures - caused by some type of processing or material defects

Intrinsic failures - happen as a result of wearout

The “bathtub curve” is really the addition of two curves.

James F. Salzman

No reliability discussion can be complete without mentioning the bathtub curve.

TYPICAL TIME (log scale)

Failu

re R

ate

Infant MortalityExtrinsic Failures

Useful Lifetime

Wear outIntrinsic Failures

EFR Testing/Outlier Process Quals/WLRProduct Quals

6 months – 1 year 10 years

Burn-in 24 hrsFIT

DPPM to Customer

EFRDPPM

Random Failures

The Reliability Bath Tub Curve

James F. Salzman

KNOWN SEMICONDUCTOR FAILURE MECHANISMS

• Electromigration (leads, contacts, vias)• Stress Migration (notching, voiding)• Dielectric Leakage / Time-Dependent Dielectric Breakdown• Antenna Charging• Mobile Ions (surface inversion)• Corrosion• Channel Hot Carriers (parametric degradation, NMOS, PMOS)• NBTI (Negative Bias Temperature Instability)• Gate Oxide Integrity (GOI) Time Dependent Dielectric Breakdown TDDB• Thermo-Mechanical Stresses (shear, tensile, fillers, etc.)• Bonding (intermetallic voiding, chip-outs)• Heat Dissipation (impact on failure rate)• Radiation Effects

James F. Salzman

The total intrinsic failure curve is the sum of the failure rate of allpossible wearout mechanisms.

Time

Failu

re R

ate

Total

Gate OxideTDDB

Electromigration

Channel Hot Carriers

A Closer Look at Intrinsic Failures

RadiationNBTI

Radiation is just one of many FIT mechanisms, and often is not the Major mechanism !!!

SmallRandom

FIT’s

Useful Life

James F. Salzman

TECHNOLOGY RELIABILITY ASSESSMENT

Diodes • Leakage• Kinetics• Defect Density• Stability

Gate Oxide Integrity• VLF• VBD• TDDB• Antenna Effects

Channel Hot Carriers• RelXpert Models• N Channel Transistors• P Channel Transistors• Degradation Lifetime:

Idlin, Idsat• Hot Carrier Degradationduring Wafer Stress/Burn-In

NBTI / PBTI• RelXpert Models• N Channel Transistors• P Channel Transistors•Degradation Lifetime:

Idsat, Vtlin•NBTI Degradationduring Wafer Stress/Burn-In

Contacts/Vias• Contact EM Performance• Via EM Performance

ILO Integrity (Interlevel/Intralevel) • Leakage• Breakdown• TDDB• Microtrenching/Hillocks• LER/HER (Line Edge Roughness; Hole Edge Roughness)

Metal / Vias• Electromigration• Stress Migration• Corrosion• Bonding• Side Hillocks

SER• ASER Data

ESD• HBM• CDM• It2

LatchupMobile Ions• Temp/Bias Stress• Thick Fields• Poly Field I66

• Click to add text

P+ Substrate

N TankP TankP- EPI

n+ n+ p+p+

Metal 5

Metal 3

Metal 2

Metal 1

Metal 4

James F. Salzman

Packaging ReliabilitySpace Level Reliability – Organic packages reliability concerns remain:

PB Free - Tin Whiskers

17 April, 2005 — Millstone Nuclear Generating Station — A single tin whisker created a bridge (short circuit) between a diode and the output trace on a circuit card, causing a partial reactor shutdown. P. Daddona, “New London, CT, July 4, 2005

Tin Whiskers growing on a MATTE tin-plated copper lead frame commonly used in the manufacture of 28 pin small outline integrated circuit (SOIC) lead frame after 3 years of ambient storage. From Wikipedia

Tin whiskers caused the failure of the Galaxy IV Satellite in 1998. Wireless Week, 1999-05-17.

-Residual stresses caused by electroplating-mechanically induced stresses-bimetallic stress induced by diffusion -thermal stresses.

Oh My !!

James F. Salzman

JC-13 Government Liaison – TI ChairmanJC-13.4 Rad Hard – TI Participation• JC-13.1 Discrete Devices• JC-13.2 Microelectronics• JC-13.4 Rad Hard - TI Active• JC-13.5 Hybrids, RF/Microwave, MCM

JC-14 Quality & Reliability – TI Active

US Government Liaisons• US Army• US Navy• US Air Force • NASA• DSCC• DMEA• GIDEP

Teaming

Europe/Japan/Asia

• JAXA - Japan AerospaceExploration Agency

• ESA - European Space Agency

• CNES – French Space Agency

• DLR - Deutsches Zentrum fürLuft- und Raumfahrt e.V

• BSNC - British National Space Centre

• DSO – Singapore Defense Science Org

• DOS/ISRO – India Department of Space & Research

Collaborative Relationships

James F. Salzman

TI in the High Reliability industry• 30+ years of experience working with HiRel customers• Largest dedicated organization in the industry • Worldwide sales and support infrastructure

HiRel Products Life Cycle

Intro Phase OutDeclineMaturityGrowth

ConsumerLife Cycle

As short as 9 months

As long as 30 years

ProductLongevityAssured

ProductLongevityAssured

Extended product life cycles• Obsolescence mitigation • Supply beyond commercial availability• Product resurrection

Leading-edge technology and manufacturing• HiRel approved fabs (certified by Defense &

Aerospace standards)• Access to latest process technologies (HPA07, BiCom, etc.)• Broad packaging capabilities

Market expertise• Baseline control and qualification per unique market

requirements: TID, SEU, high-temp, ceramic, QML –Q/V, EP, die solutions, etc.

Commitment

Overview of TI HiRel Division

James F. Salzman

DMOS 5

• 200mm wafers• Production CMOS• Dallas, Texas• 180, 130 nm

DMOS 6

• 300mm wafers Production CMOS

• Dallas, Texas• 90, 65 & 45nm

MIHO5/6

• 200mm wafers• Production CMOS• Miho, Japan

• 200mm wafers• Production CMOS• Buchon, Korea

ANAM

Advanced, Reliable, Worldwide Supply

FFAB

• 200mm wafers• Production CMOS and BiCMOS

• Freising, Germany

• 200mm wafers• Production CMOS & BiCMOS

• Military HiRel• Sherman, Texas

TI Sherman

• MS, RF, DSP development

• 200mm CMOS• DSP Headquarters• Houston, Texas

TI Stafford, Houston

DMOS 4

• 200mm wafers• Production CMOS• Dallas, Texas• 250, 180 & 130nm

James F. Salzman

HiRel SPACE Products & Technology

Space is a Global territory for SemiconductorsOver 100 Launches each year :

• Imaging, Weather, Communications • Increase system complexity & Data rates• Defense related Satellites drive more opportunities

Texas Instruments offers a complete “ signal chain” QML-V products line for Space

James F. Salzman

• Strong technology/product portfolio for HiRel applications – New devices being qualified– Customer driven roadmaps

• TI-owned Wafer Fabs, Processes and Designs– Third party designs validated against TI design rules and processes

• Established QML-V qualification and production flows– Fully support New Technology requirements of MIL-PRF-38535– All optimizations approved through DSCC, Aerospace, and NASA

• Investments being made to enhance radiation tolerance and reliability– Addresses the needs of multiple market segments, DHD, Medical, Space -– Based on commercial high volume processes– 3rd party IP partnerships for radiation improvements– Market & Customer defined roadmaps– Specific devices may be ported to commercial rad-tolerant processes– Total dose radiation testing is performed at qualification on all new QML-V

product releases– Custom radiation test options are available for SEE & ELDRS

characterization-

TI Space Products and QML-V Strategies

James F. Salzman

SubstrateP-Well

NSD

PSDThermal OxideBPSG

AlCu

PhotoresistNitride

NSD DepPSD Dep

LDD N-

CD4000 Logic Family TID Improvement

• Process hardening study underway • Metal Gate Process, no LOCOS Isolation – no FOX birds beak issue• Key is to harden the thick Gate Oxide• Change Gate from thermal Oxide to ONO – readjust transistor Vt’s• Use EPI substrate for Latchup prevention• Taking customer inputs for device part numbers• Potential hardened product release 4Q10

Gate OxideP-Well

James F. Salzman

Unitrode & Bipolar Product Improvement• Legacy Unitrode & Bipolar ELDRS performance from SFAB/MFAB ~ 8KRad

• SFAB process adjustment made: Improved Reliability and Hardness

• SFAB Bipolar process now passes 40KRAD @ 10mRad/sec(si) on following devices:– UC1825– UC1825A– UC1846– UC1843A– UC1525B

– UC1637W– UC19432JG

UC1843AJG-SP5962-8670409VPAUC1843AJQMLV5962-8670406VPAJG (8-CDIP)UC1843A

UC1846J-SPUC1846FK-SP

5962-8680603VEA5962-8680603V2A

UC1846JQMLVUC1846LQMLV

5962-8680601VEA5962-8680601V2A

J (16-CDIP)FK (20-LCCC)

UC1846

UC1525BFK-SP5962-8951106V2AUC1525BLQMLV5962-8951105V2AFK (20-LCCC)UC1525B

UC1825AJ-SP5962-8768105VEAUC1825AJQMLV5962-8768102VEAJ (16-CDIP)UC1825A

UC1825J-SPUC1825FK-SP

5962-8768104VEA5962-8768104V2A

UC1825JQMLVUC1825LQMLV

5962-8768101VEA5962-8768101V2A

J (16-CDIP)FK (20-LCCC)

UC1825

New TI Part#New SMD #Old TI Part#Old SMD #PackageDevice Function

More devices to follow in 2010 & Customers can always drive new releases

In Qualification

Available Now !! –See new Standard Microcircuit Drawing numbers below.

In Qualification– SE555– AM26LS33

James F. Salzman

Radiation Hardened 16 M SRAM

The C05HA512K32 is a high performance CMOS SRAM organized as 524,288 words by 32 bits.20ns read, 10ns write maximum access timeAsynchronous functionally compatible with commercial 512Kx32 SRAM’sBuilt-in EDAC (Error Detection and Correction) to mitigate soft errorsBuilt-in Scrub Engine for autonomous correction (scrub frequency and delay is user defined user)CMOS compatible input and output level, three state bidirectional data bus3.3 +/- 0.3V I/O, 1.8 +/- 0.15V CORE68 Lead Ceramic Quad Flat PackQualified Product Release 4Q 2010

James F. Salzman

TI Rad Hard Memory & DSP Product Roadmap

Time

Silicon Space  

Licensed 

Products

16M SRAM 8M DPSRAM 32M SRAM 64M SRAM SDRAM

180nm 130nm 130nm 90 nm 130nm

Texas 

Instruments 

Reuse Products

1394B

PHY

1394B

Link

VC33

DSP

C6701

DSP

C6727

DSP

NV

FRAM

2009 - 2010 - 2011 - 2012

= Radiation Tested

= Work in progress

= Planned beyond 2010

Products are based on BGR implant IP

James F. Salzman

Data Converter Space Roadmap

ADS546312b/500M

ADS5400in-dev

MSPS170135105

12b

Res

olut

ion

200 250 500 1000

14b

400300

ADS547414b/400M

ADS542414b/105M

2008

ADS544912b/300M

ADS544413b/250M

DAC5675A14b/400M

In Production In road map In the future

James F. Salzman

Down Hole Drilling Harsh Environments

• Environmental Operating Issues– Shock and vibration– Temperature and pressure– High reliability over target lifetime

Seismic applications -40°C to +125°C 1 year

Logging while drilling -40°C to +150°C 1000 hours-40°C to +175°C 200 hours

Wireline -40°C to +175°C 400 hours

Reservoir monitoring +150°C to +225°C 6 months

Permanent applications +150°C 5 years

NBTI, hot carrier, device leakage and latchup are main issues

The same techniques used to harden against radiation effects, improve NBTI, device leakage, and latchup in high temperature applications !!

James F. Salzman

Strategy for HiRel Harsh Environment Products

MEDICAL HIMEDICAL HI--RELRELNeutron SEL & SEU, TIDNeutron SEL & SEU, TID

Neutron and SEL improvement

BGR & EPI substrates

Hardened BGR Hardened BGR MEMORIES MEMORIES

Hardened PowerHardened Power& Bipolar& Bipolar

Hardened Digital Hardened Digital Signal ProcessorsSignal Processors

Hardened Standard Hardened Standard LOGIC LOGIC

AVIONICS HIAVIONICS HI--RELRELNeutron SEL & SEUNeutron SEL & SEU

Commercial ICProcess

Reliability & HardeningInsertionBiCom, ADSXXXX,

DACXXXX

Improved reliability of standard components

for High TempBGR added to

standard DSP products

SRAM, SDRAM, NVRAM

100K Rad 54ACXX, CD4K Family

ELDERS free @ 40K Rad Unitrode & Bipolar

Hardened Data Hardened Data ConvertersConverters

Down Hole Drilling Down Hole Drilling Characterization + BGRCharacterization + BGR

James F. Salzman

• Many Satellite failures are the result of faulty components• Up-Screening product may not be a reliable solution• TI has full ownership of all phases of it’s QML products• TI addresses Global markets, i.e. Medical, Avionics, Down Hole,

Space based systems. These are all faced with the same reliability issues: NBTI, CHC, TDDB, Radiation, Temperature, etc.

• TI’s HiRel strategy is to apply global process analysis and improvements to address multiple market uses for it’s products.

• TI HiRel has a strong, expanding portfolio of space qualified products

• By leveraging the Global Market, we can offer these products at more effective cost

The Importance of Reliable Space Products Summary

James F. Salzman

For More Information

• The TI HiRel, Defense & Aerospace Internet Site

• http://www.ti.com/hirel• The TI Product Information Center

• 1-800-477-8924• support.ti.com/sc/pic/americas.htm

James F. Salzman

Thank You