supplementary information crystalline core / amorphous ...1 supplementary information crystalline...

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1 Supplementary Information Crystalline Core / Amorphous Shell Structured Silicon Nanowires Offer Size and Structure Dependent Reversible Na-storage Manoj K. Jangid a# , Aniruddha S. Lakhnot b# , Aditya Vemulapally a,c , Farjana J. Sonia a , Somika Sinha b , Rajiv O. Dusane b *, Amartya Mukhopadhyay a ** a High Temperature and Energy Materials Laboratory, b Thin film semiconductor laboratory; Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay (IITB), Mumbai, India # equal contributions from Manoj K. Jangid and Aniruddha S. lakhnot ______________________________________________________________________________ corresponding authors’ e-mail-ids: *[email protected], **[email protected]; phone (o): *+912225767633, **+912225767612 Fig. S1. Representative SEM image obtained with the Sn-coated stainless steel substrate used for the SiNW deposition, showing homogenously distributed Sn nanoparticles. Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A. This journal is © The Royal Society of Chemistry 2018

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Page 1: Supplementary Information Crystalline Core / Amorphous ...1 Supplementary Information Crystalline Core / Amorphous Shell Structured Silicon Nanowires Offer Size and Structure Dependent

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Supplementary Information

Crystalline Core / Amorphous Shell Structured Silicon Nanowires Offer Size and Structure Dependent Reversible Na-storage

Manoj K. Jangida#, Aniruddha S. Lakhnotb#, Aditya Vemulapallya,c, Farjana J. Soniaa, Somika Sinhab, Rajiv O. Dusaneb*, Amartya Mukhopadhyaya**

a High Temperature and Energy Materials Laboratory, b Thin film semiconductor laboratory; Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology

Bombay (IITB), Mumbai, India

# equal contributions from Manoj K. Jangid and Aniruddha S. lakhnot______________________________________________________________________________corresponding authors’ e-mail-ids: *[email protected], **[email protected]; phone (o): *+912225767633, **+912225767612

Fig. S1. Representative SEM image obtained with the Sn-coated stainless steel substrate used for the SiNW deposition, showing homogenously distributed Sn nanoparticles.

Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A.This journal is © The Royal Society of Chemistry 2018

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Fig. S2. Schematic representation of the vapor-liquid-solid (VLS) mechanism used for the Si nanowire growth.

Fig. S3. Representative SEM images obtained with the thinner SiNWs having the different overall average diameters, as per (a) SiNW-75, (b) SiNW-55, (c) SiNW-40 (with the corresponding insets showing the zoomed-in side views).

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Fig. S4. Potential profiles, as obtained during galvanostatic cycling (in Na ‘half cells’) at current density equivalent to C/10 for the 1st, 2nd, 5th, 10th, 25th, 50th and 100th cycles of the (a) SiNW-75, (b) SiNW-55 and (c) SiNW-40.

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Fig. S5. Cyclic voltammograms recorded at the different potential scan rates between 0.2 and 1.0 mV s-1, within potential window of 0.01 - 2.0 V with SiNW-40 in Na ‘half cells’.

Fig. S6. Low magnification TEM images obtained with SiNW-40 after 100 galvanostatic cycles (in Na ‘half cells’) at current density equivalent to C/10, showing structural integrity and also preservation of the crystalline core.