Journal of the Korea Academia-Industrial cooperation SocietyVol. 18, No. 7 pp. 17-25, 2017

https://doi.org/10.5762/KAIS.2017.18.7.17ISSN 1975-4701 / eISSN 2288-4688

17

1, 2, 3, 2*1 , 2 ICT, 3 BT

The development of ultra high-speed metal film deposition system and process technology

for a heat sink in digital devices

Hyo Eun Yoon1, Seong Joon Ahn2, Dong Hwan Han3, Seungjoon Ahn2*1Department of Physics & Nano Science, Sun Moon University

2Division of Mechanical and ICT Convergence Engineering, Sun Moon University3Department of BT-Convergent Pharmaceutical Engineering, Sun Moon University

LED OLED heat sink . Cu m Cu . Cu heating . . Cu 1000 /s 100 m ~2.0% .

Abstract To resolve the problem of the temperaturerise in LED or OLED lighting, until now a thick metal film hasbeen used as a heat-sink. Conventionally, this thick metal film is made by the electroplating method and used as theheat-dissipating plate of the electronic devices. However, nowadays there is increasing need for a Cu metal film witha thickness of several hundred micrometers that can be formed by the dry deposition method. In this work, we designed and fabricated a Cu film deposition system where the heating element is separated fromthe ceramic crucible,which makes ultra-rapid deposition possible by preventing heat loss. In addition, the resulting induction heating alsocontributes to the high deposition rate. By tuning the various parameters, we obtained a 100-m thick Cu film whose heat conductivity is high and whose thickness uniformity is better than 2%, while the deposition rate is as high as1000 /s.

Keywords : Heat sink, IVD, LED, Metal film, OLED, Ultra-high speed metal deposition

*Corresponding Author : Seungjoon Ahn(Sun Moon Univ.)Tel: +82-41-530-22617 email: sjan@sunmoon.ac.kr Received April 6, 2017Accepted July 7, 2017

Revised (1st June 20, 2017, 2nd July 6, 2017)Published July 31, 2017

1.

LED(Light-Emitting Diode)

major . LED ~40%

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18

shift

. (Organic Light Emitting Diode ; OLED) main stream OLED

[1-3].

. heat sink( ) substrate heat sink [4,5]. heat sink LED OLED

Fig. 1 . LED OLED substrate glass 1 W/mK glass substrate OLED display 86C [6,7]. substrate . OLED

.

AMOLED TFT LED ,

m Cu .

Fig. 1. The heat sinks of the LED lighting.

Cu 401 W/mK[8]

substrate .

CVD(Chemical Vapor Deposition) [9], sputtering [10], evaporation [11] quality ( nm/min) m Cu . [12] m

OLED [13]. IVD(Inductive-Vaporized

Deposition) m Cu , flexible OLED substrate 1000 /s .

2.

[14] source ( : 10-5 Torr) CVD sputtering (6 m/min ) [15]. IVD Cu heating ,

[16]. evaporator sputter 1~2 m/min 6~7 m/min [17]. 100

19

m 10~15 min

OLED , .

Fig. 2. Design of the high-speed IVD-type deposition equipment.

Fig. 2 IVD source . source 1, 2 1 1 2 source .

heating . ~1000 /s . power power source melting

. Fig. 2 ceramic housing graphite heating block

power output output .

Source melting substrate substrate

. Source flange source substrate shutter

. process

.

cooling block . water line bellows . cooling block 220~230C heating substrate .

IVD source source .

. graphite . 2 graphite . Graphite( 100 ppm, 1.8 kg/m3) test

. graphite

.

source (W) .

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20

3.

3.1

parameter

Fig. 3 recipe , . OLED , 100 m 1000

parameter ~450 /s uniformity roughness . recipe parameter

.

-Base pressure : Torr-B 2 inch sapphire

-Source to wafer : 250~350 mm-Output power : source ramping up

Fig. 3. The basic recipe of the induction-heating high-speed deposition system.

~1000 /s source shutter low quality

. power(5.0~6.0 kW)

power source material melting

. , ceramic housing graphite heating block power output output .

Source wafer . Solid angle() ,

.

. source source target

. Source wafer quality . Z-motion manipulate

source substrate substrate substrate uniformity source substrate 200~250 mm . Z-motion manipulate Z-axis 140 mm . source substrate substrate . Table 1 source substrate substrate Fig. 4 Z-motion manipulate .

Table 1.Temperature of the substrate according to the distance from the source.

Distance (mm) Substrate Temperature(C)

300 209

220 265

200 340

21

(a) (b)

Fig. 4. (a) Design of the Z-motion manipulate and (b) the photograph of the installed one.

Ceramic housing graphite heating block power output recipe 30 min ~173 m . Fig. 5 recipe 30 min .

2 inch sapphire . sapphire Cu adhesion . sample

. parameter .

-Base pressure : Torr

-Process pressure : Torr-A W 2 inch sapphire .

-Source to wafer : 200~220 mm

Fig. 5 ~1000 /s . source melting graphite

W carbon graphite sheet .

Fig. 5. The 173 m-thick film whose thickness being measured by digital micrometer. (deposition time : 30 min)

3.2

IVD

Fig. 6 recipe , .

Fig. 6. Standard deposition recipe of 95 m-thick film with deposition rate of 1000 /s.

base pressure

Torr, process pressure Torr . graphite W 4 inch Si wafer .

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Source wafer substrate source wafer

source wafer 200~220 mm setting . Fig. 6 1000 /s 30 m, 95 m . 1000 /s, 95 m sample 1(1019) recipe 16 min , 30 m sample 2(1102) recipe 5 min sample . ~60 m

.

95 m sample 1(1019) Olympus(MX61) [18].

Olympus(MX61) sample . sample resin( : EpoKwickTM, : Epoxy Resin 20-8136-128) hardener( : EpoKwickTM, : Epoxy Hardener 20-8138-032) 5:1 , 70C 2 . cutting polishing

alumina (1.0 m, 0.3 m) , polishing . sample 25~1000 . 95 m sample 1(1019)

Fig. 7 (a) wafer 5 point(Top, Center, Bottom, Left, Right) . uniformity () (-) (-) % 3% spec-in . Fig. 7 (b) sample 1(1019) . Fig. 7 (b)

T(95.01 m), C(96.41 m), B(95.01 m), L(95.86 m), R(95.27 m) 95.51 m uniformity 0.9% ~995 /s .

(a)

(b)

Fig. 7. (a) The points in a standard sample 1(1019) where the thickness were measured. (b) The photo of the thickness measurement using the Olympus(MX61) microscope.

(Dual-beam Focused Ion Beam System) source Ga tip . source 30~50 kV source extractor 2 image [19].

30 nm~60 m [20]. ~30 m sample 2(1102) sample

23

1(1019) wafer 5 point . Fig. 8 sample 2(1102) T(30.79 m), C(30.70 m), B(29.57 m), L(29.42 m), R(30.69 m) 30.15 m uniformity 1.8% . Sample 2(1102) 5 min 1005 /s sample 2(1102) 1000 /s .

Fig. 8. Photos of the thickness measurement of the standard sample 2(1102) using the dual ion beam-focusing system.

test batch to batch uniformity 0.8% .

.

4.

LED , OLED Cu

. OLED/LED evaporator sputter AMOLED TFT

LED m Cu . Cu (, sputtering, e-beam) , OLED Cu IVD

.

, , . flexible target OLED (Organic LED) ,

1000 /s , 10 /s

. , OLED , ~80 m

.

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(Hyo Eun Yoon) []

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(Seong Joon Ahn) []

1987 2 : ()1989 2 : ()1992 8 : ()1992 9 :

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(Dong Hwan Han) []

1987 2 : ()1989 2 : ()1993 2 : ()1993 8 1994 2 :

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(Seungjoon Ahn) []

1985 2 : ()1989 2 : ()1993 2 : ()1989 2 1997 2 :

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