mb39a107ev e1 - fujitsu · 2004-05-20 · output current2 2. evaluation board specifications....
Post on 03-Jul-2020
0 Views
Preview:
TRANSCRIPT
Fujitsu ASSP Product
1/20Power Management
MB39A107 Evaluation Board Rev1.0E
Rev 1.0EFebruary,2003
Evaluation board ManualEvaluation board Manual
MB39A107Battery Charger
MB39A107Battery Charger
Fujitsu ASSP Product
2/20Power Management
MB39A107 Evaluation Board Rev1.0E
1.1. Evaluation Board SpecificationsEvaluation Board SpecificationsThe MB39A107 evaluation board is a surface mounting circuit boardof the synchronous rectification type of down conversion circuit.The MB39A107 evaluation board can be set to one cell to four cells. The charging voltage and charging current are controlled from the power supply voltage such as AC adaptors. And, the MB39A107 is ahighly accurate, highly effective battery charger which suppliesthe current up to 4.5A.Moreover, the current amplifier which can set the offset voltage is built-in. The amplifier can be used for the current surveillance of the AC adaptor and the battery.
MIN TYP MAX Unit
12.6V setting 13.6 15 20 V
16.8V setting 17.8 19 25 V
12.6V setting 12.47 12.6 12.73 V
16.8V setting 16.63 16.8 16.97 V
12.6V setting 31 63 126 mV
16.8V setting 42 84 168 mV
SW3=OFF,SW4=OFF 4.3 4.5 4.7 A
SW3=ON,SW4=OFF 2.6 2.7 2.8 A
SW3=OFF,SW4=ON 0.29 0.41 0.53 A
4.6 4.8 5 A
13.1 13.5 13.9 V
Constant voltage 6 9.3 16.8 ms
Constant current 4 6.3 11.5 msSoft-start time
Output current1
Output ripple voltage
Item
Input voltage
UVComp Detect voltage (VCC=H to L)
Output voltage
Output current2
2. 2. Evaluation Board SpecificationsEvaluation Board Specifications
Fujitsu ASSP Product
3/20Power Management
MB39A107 Evaluation Board Rev1.0E
Current detection amplifier (Current Amp1) output pinOUTC1
MB39A107’s GND. This pin is common to GND pin. This pin is only used a monitor around MB39A107’s GND.
SGND
Battery charger system GNDGND
Mode control pin [When SW3=OFF, SW4=OFF]Suspend mode : Ichg ≅ 4.5A
[When SW3=ON, SW4=OFF]Resume mode : Ichg ≅ 2.7A
[When SW3=OFF, SW4=ON]Dead battery mode : Ichg ≅ 0.41A
MODE SW
Reference voltage output monitor pin VREF
Power supply control pin[When SW1=OFF]VCTL-1 = 0V to 0.8V : Standby mode VCTL-1 = 2.0V to VIN : Operation mode
CTL-1
Output voltage from DC/DC converter(EV board)Vo
Input voltage from DC power supply, AC-AdaptorVIN
DESCRIPTIONSPIN name
Current detection amplifier power supply control pin[When SW2=OFF]VCTL-2 = 0V to 0.8V : Standby mode VCTL-2 = 2.0V to VIN : Operation mode
CTL-2
+INE2 Charging current setting pin
VB Output circuit bias output pin
Charging current setting pin for fail safechg_ctl
3. 3. Pin DescriptionsPin DescriptionsFunction table of the Pin terminal
Fujitsu ASSP Product
4/20Power Management
MB39A107 Evaluation Board Rev1.0E
Function table of the DIP Switch4. 4. SwSw InformationInformation
• Connect VIN and GND pin to power supplies(e.g to AC Adaptor).• Put SW into the state of turning off all.
(1) Set up
(2) Confirmation Method•Turn on SW1 and SW2 turn on the power to VIN (power supply) while turned on. •IC operates normally if BATT=16.8V(Typ) is output. •Changing battery charge mode,SW3=OFF SW4=OFF : Suspned modeSW3=ON SW4=OFF : Resume modeSW3=OFF SW4=ON : Dead battery mode
5.5. Setup & Confirmation MethodSetup & Confirmation Method
*: The mode of note PC is shown.
Stand-by
OFF
Operating
Operating
ON
Current detection amplifier power supply control
Operation Control
Function
CTL-22
CTL-11
NameSW
Suspend *Mode
Resume *Mode
Charging current model controlMode SW3
Suspend *Mode
Dead Battery * Mode
Charging current model controlMode SW4
Stand-by
Fujitsu ASSP Product
5/20Power Management
MB39A107 Evaluation Board Rev1.0E
6. 6. Parts Layout BlockParts Layout Block
Board parts block diagram
Fujitsu ASSP Product
6/20Power Management
MB39A107 Evaluation Board Rev1.0E
Board Layout
Top Side
Bottom Side
Inside GND(Layer 2)
Inside VIN(Layer 3)
Fujitsu ASSP Product
7/20Power Management
MB39A107 Evaluation Board Rev1.0E
7. 7. Circuit DiagramCircuit Diagram
GND
VoVIN
GND
VB
R7KOA15mΩ
NECuPA2752
R9KOA0Ω
D2ROHMRB053L-30
sumida 5.2uHCDRH104-100
KOA33mΩ
TDKC3216JB1E225K2.2uF/25V×2
C1 C2
Q1 L1 R8
VSYS
C3 C4
R28
R27
CTL-2
CTL-1
C5
D1DE5PC3
R10KOA0Ω
Q2
TDKC3216JB1E225K2.2uF/25V×3
FQ4JP3
TDK0.47u×2
C12TDK0.47uF
C11TDK0.1uF
C10TDK0.022uF
R30ssm47kΩ
R6ssm100kΩ
ssm200kΩ
ssm100kΩ
R29KOA0Ω
R5ssm200kΩ
UVCOMP13.5V
R4ssm33kΩ
R3ssm47kΩ
R2ssm180kΩ
R1ssm56kΩ
14.57/17.55
C13 C14
D3 D4
ssm100kΩ
R35ssm1kΩ
C19TDK10pF
SW1 SW2
30 29 1928 27 26 25 24 23 22 21 20
1 2 123 4 5 6 7 8 9 10 11
MB39A107C6
SGN
18 17 16
1513 14
R26
OUTC
VREF
+INE2
chg_ctl
C15TDK1.0uF
TDK0.1uF
R13KOA0Ω
R17ssm100kΩ
R23ssm100kΩ
R11ssm51kΩ
R12ssm51kΩ
R16ssm10kΩ
C7TDK6800pF
C8TDK6800pF
R24ssm10kΩ
C9TDK2200pF
R25ssm51kΩ
R14ssm47kΩ
R15ssm12kΩ
SW1 SW2 +INE2 IoOFF OFF 3.71V 4.50AON OFF 2.23V 2.70AON ON 0.34V 0.41A
R20ssm6.2kΩ
R19ssm10kΩ
R18ssm47kΩ
R21ssm18kΩ
R22ssm1.3kΩ
R32KOA0Ω
R31ssm100kΩ
R34ssm20kΩ
R33ssm30kΩ
C16TDK10pF
C17TDK10pF
C18TDK10pF
SW3 SW4
D5ROHMRB053L-30
Fujitsu ASSP Product
8/20Power Management
MB39A107 Evaluation Board Rev1.0E
Compnent Item Specification Vendor package Parts No. RemarkM1 IC MB39A107 FUJITSU FPT-30P-M04 MB39A107Q1,Q2 N-ch FET VDS=-30V,ID=8A(max) NEC SO-8 uPA2752D1 Diode VF=0.4V(max) at IF=2.5A SHINDENGEN SO-64 DEP5PC3D2 Diode VF=0.42V(max) at IF=3A ROHM PMDS RB053L-30D3,D4 Diode VF=0.45(max) at IF=100mA Origin SC-82 FQ4JP3D5 Diode VF=0.42V(max) at IF=3A ROHM PMDS RB053L-30L1 Inductor 10uH 35mΩ 4.4A SUMIDA SMD CDRH104R-100C1,C2 POSCAP 15uF(25V) SANYO 25TQC15M Not mountingC1,C2 Ceramic condenser 2.2uF(25V) TDK 3216 C3216JB1E225KC3,C4 POSCAP 22uF(20V) SANYO 20TQC22M Not mountingC3,C4,C5 Ceramic condenser 2.2uF(25V) TDK 3216 C3216JB1E225KC6,C11 Ceramic condenser 0.1uF(50V) TDK 1608 C1608JB1H104KC7 to C9 Ceramic condenser 2200pF(50V) TDK 1608 C1608JB1H222KC10 Ceramic condenser 0.022uF(50V) TDK 1608 C1608JB1H223KC12 Ceramic condenser 0.47uF(25V) TDK 3216 C3216JB1E474KC13,C14 Ceramic condenser 0.47uF(50V) TDK 3216 C3216JB1H474KC15 Ceramic condenser 1uF(25V) TDK 3216 C3216JB1E105KC16 to C17 Ceramic condenser Not mountingC18 to C19 Ceramic condenser 10pF(50V) TDK 1608 C1608JB1H100KR1 Resistor 56kΩ(0.5%) ssm 1608 RR0816P563D Not mountingR2 Resistor 180kΩ(0.5%) ssm 1608 RR0816P184D Not mountingR3 Resistor 47kΩ(0.5%) ssm 1608 RR0816P473D Not mountingR4 Resistor 33kΩ(0.5%) ssm 1608 RR0816P333DR5 Resistor 200kΩ(0.5%) ssm 1608 RR0816P204DR6 Resistor 100kΩ(0.5%) ssm 1608 RR0816P104DR7 Resistor 15mΩ(1%) KOA SL1 SL1TTE15LOFR8 Resistor 33mΩ(1%) KOA SL1 SL1TTE33LOFR9,R10,R13 Jumper 0Ω KOA 3216 RK73Z1JR11,R12 Resistor 51kΩ(0.5%) ssm 1608 RR0816P513DR14 Resistor 47kΩ(0.5%) ssm 1608 RR0816P473DR15 Resistor 30Ω(0.5%) ssm 1608 RR0816P303DR16,R24 Resistor 330kΩ(0.5%) ssm 1608 RR0816P334DR25 Resistor 51kΩ(0.5%) ssm 1608 RR0816P513DR17,R23,R26,R28 Resistor 100kΩ(0.5%) ssm 1608 RR0816P104DR18,R30 Resistor 47kΩ(0.5%) ssm 1608 RR0816P473DR19 Resistor 10kΩ(0.5%) ssm 1608 RR0816P103DR20 Resistor 24kΩ(0.5%) ssm 1608 RR0816P243DR21 Resistor 18kΩ(0.5%) ssm 1608 RR0816P183DR22 Resistor 1.3kΩ(0.5%) ssm 1608 RR0816P132DR27 Resistor 200kΩ(0.5%) ssm 1608 RR0816P204DR29 Jumper 0Ω KOA 3216 RK73Z1JR31 Resistor 100kΩ(0.5%) ssm 1608 RR0816P104D Not mountingR32 Jumper 0Ω KOA 3216 RK73Z1J Not mountingR33 Resistor 30Ω(0.5%) ssm 1608 RR0816P303D Not mountingR34 Resistor 20kΩ(0.5%) ssm 1608 RR0816P203D Not mountingR35 Resistor 10kΩ(0.5%) ssm 1608 RR0816P103D Not mountingSW1 to SW4 DIP SW 4 poles MATSUKYU DMS-4HPIN Wiring terminal Mac-Eight WT-2-1
8. 8. Circuit Parts ListCircuit Parts List
16.812.6Vo[V]
Remove0R29 [Ω]
4cell3cellBattery
Resistor value at 3cell or 4cell
Fujitsu ASSP Product
9/20Power Management
MB39A107 Evaluation Board Rev1.0E
(1) Output voltage
Vo(V)= (R26+R27+R28)/R26 × 4.2 ≅ 16.8(V)
**1 Resistor R26-R28 connected with OUTD pin (pin 17) is recommended to use one to be able to ignored internal FET ON-resistance( 35Ω, 1mA) . **2 In case of using 3cell Battery Mode, put Jumper on R29 allocation.
(2) Suspend mode charging current
Io max(A) = R18/(R18+R19+R20) ×VREF / (R8×25) ≅ 4.5(A)
(3) Resume mode charging current
Io (A) = R18//R21/(R18//R21+R19+R20) ×VREF / (R8×25) ≅ 2.7(A)
(4) Dead Battery mode charging current
IDEAD(A) = R18//R22/(R18//R22+R19+R20) × VREF / (R8×25) ≅ 0.41(A)
(5) Soft-Start Time
Constant voltage mode soft-start timets(s) = 0.42 × C10(µF) ≅ 9.2(ms)
Constant current mode soft-start timets(s) =R18/(R18+R19+R20) × VREF/10(µA) × C10(µF) ≅ 6.3(ms)
(6) Triangular wave oscillation frequency
fosc(kHz) = 23500/R30(kΩ) ≅ 500(kHz)
9.9. InitializationInitialization
Fujitsu ASSP Product
10/20Power Management
MB39A107 Evaluation Board Rev1.0E
10. 10. Reference DataReference Data(1)Conversion efficiency
IO vs. efficiency (Constant Voltage mode)
707274767880828486889092949698
100
0.01 0.1 1 10IO(A)
effic
ienc
y(%
)
19V
25V
17.5V
VO vs. efficiency (Constant Current mode)
707274767880828486889092949698
100
0 2 4 6 8 10 12 14 16VO(V)
effic
ienc
y(%
)
19V
25V
17.5V
Fujitsu ASSP Product
11/20Power Management
MB39A107 Evaluation Board Rev1.0E
(2) Dropping characteristicIBATT vs. VBATT(Vin=19V)
0
2
4
6
8
10
12
14
16
18
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IO(A)
VO(V
)
SW3=OFFSW4=OFF
SW3=ONSW4=OFF
SW3=OFFSW4=ON
Fujitsu ASSP Product
12/20Power Management
MB39A107 Evaluation Board Rev1.0E
(3) Switching waveform
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (µs)
Vs(V) 2
1
0
Vs
OUT2
OUT2(V)10
5
0
OUT1OUT1(V) 20
10
0
VIN=19VSetting Io=2ASW3=OFFSW4=OFF
Constant voltage mode
Constant current mode
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (µs)
Vs(V) 2
1
0
Vs
OUT2
OUT2(V)10
5
0
OUT1OUT1(V) 20
10
0
VIN=19VSetting Vo=10VSW3=OFFSW4=OFF
Fujitsu ASSP Product
13/20Power Management
MB39A107 Evaluation Board Rev1.0E
(4) Soft-start/discharge operation waveform
CTL-2
OUTC1
CTL-1
0 2 4 6 8 10 12 14 16 18 20 (ms)
Vo(V)
15
10
5
0
OUTC1(V) 5
0
CTL-2(V) 5
0
VIN=19VSetting Vo=10ΩSW3=OFFSW4=OFF
Vo
CTL-1(V) 5
0 CTL-2
OUTC1
CTL-1
0 2 4 6 8 10 12 14 16 18 20 (ms)
Vo(V)
15
10
5
0
OUTC1(V) 5
0
CTL-2(V) 5
0
VIN=19VSetting Vo=10ΩSW3=OFFSW4=OFF
Vo
CTL-1(V) 5
0
CTL-2
OUTC1
CTL-1
0 2 4 6 8 10 12 14 16 18 20 (ms)
Vo(V)
15
10
5
0
OUTC1(V) 5
0
CTL-2(V) 5
0
VIN=19VSetting Vo=10ΩSW3=OFFSW4=OFF
Vo
CTL-1(V) 5
0 CTL-2
OUTC1
CTL-1
0 2 4 6 8 10 12 14 16 18 20 (ms)
Vo(V)
15
10
5
0
OUTC1(V) 5
0
CTL-2(V) 5
0
VIN=19VSetting Vo=10ΩSW3=OFFSW4=OFF
Vo
CTL-1(V) 5
0
CTL-2
OUTC1
CTL-1
0 2 4 6 8 10 12 14 16 18 20 (ms)
Vo(V)
15
10
5
0
OUTC1(V) 5
0
CTL-2(V) 5
0
VIN=19VSetting Vo=10ΩSW3=OFFSW4=OFF
Vo
CTL-1(V) 5
0
CTL-2
OUTC1
CTL-1
0 2 4 6 8 10 12 14 16 18 20 (ms)
Vo(V)
15
10
5
0
OUTC1(V) 5
0
CTL-2(V) 5
0
VIN=19VSetting Vo=10ΩSW3=OFFSW4=OFF
Vo
CTL-1(V) 5
0
Fujitsu ASSP Product
14/20Power Management
MB39A107 Evaluation Board Rev1.0E
Board Photograph
FET
11. 11. Parts Select MethodParts Select Method
InductorOutput Smoothing Condenser
Flyback Diode
Charging Current Setting Sense Resistor
Fujitsu ASSP Product
15/20Power Management
MB39A107 Evaluation Board Rev1.0E
Vin=25V(Max),Vo=16.8V,Io=4.5A,fosc=500kHz1.N-ch MOS FET(uPA2752(NEC) )
Main side VDS=30V, VGS=±20V, ID=8A, RDS(on)=25mΩ(Typ), Qg=10nC(Typ)Synchronous rectification sideVDS=30V, VGS=±20V, ID=8A, RDS(on)=25mΩ(Typ), Qg=10nC(Typ)
Drain current : Peak valueThe peak value of the drain current of FET should be in the rated current value of FET.When the peak value of the drain current of FET is assumed to be ID, ID is obtained by the following formula.
For 16.8V output
The parts selection method is written in the following.
Main side
Synchronous rectification side
Vin-Vo2L
ton
≥≥≥≥ 4.5+-62 ×××× 5.2 ×××× 10
25-16.8××××
500 ×××× 10 31
×××× 0.672
ID ≥≥≥≥ Io+
≥≥≥≥ 5.56A
Vo2L
toff
≥≥≥≥ 4.5+-62 ×××× 5.2 ×××× 10
16.8××××
500 ×××× 10 31
×××× (1-0.672)
ID ≥≥≥≥ Io+
≥≥≥≥ 5.56A
Fujitsu ASSP Product
16/20Power Management
MB39A107 Evaluation Board Rev1.0E
2.Inductor(CDRH104R-100 : SUMIDA)10µH(tolerance : ±30%),rated current= 4.4A
L value in the full-load current condition:It is set that the peak to peak value of the ripple current becomes 1/2 or less of load currents.
Load current value which becomes continuous current condition.
Ripple current : peak valueThe peak value of the ripple current should be in the rated current value of the inductor. When the peak value of the ripple current is assumed to be IL, IL is obtained by the following formula.
Ripple current : peak to peak valueWhen the peak to peak value of the ripple current is assumed to be ∆IL, ∆IL is obtained by thefollowing formula.
L ≥≥≥≥2(Vin‐‐‐‐Vo))))
Ioton
2 ××××(25-16.8))))4.5
×××× 0.672××××500 ×××× 10
13≥≥≥≥
≥≥≥≥ 4.90µµµµH
Io ≥≥≥≥2LVo
toff
2 ×××× 5.2 ×××× 1016.8 ××××
500 ×××× 101
3 ××××(1-0.672)-6≥≥≥≥
≥ 1.06A
Vin-Vo2L
ton
≥≥≥≥ 4.5 +-62 ×××× 5.2 ×××× 10
25-16.8××××
500 ×××× 10 31
×××× 0.672
IL ≥≥≥≥ Io+
≥≥≥≥ 4.05A
Vin-VoL
ton
=-65.2 ×××× 10
25-16.8××××
500 ×××× 10 31
∆∆∆∆IL =
≅ 2.12A
×××× 0.672
Fujitsu ASSP Product
17/20Power Management
MB39A107 Evaluation Board Rev1.0E
3. Charge pump Diode(FQ4JP3 : ORIGIN) VR = 30V, IO = 200mA, IFSM = 1AVF = 0.41V at IF=100mA
VR should be a value which satisfies the input voltage enough. →30VEfficiency is somewhat rising in low leak schottky barrier diode by the use but even if the signal diode isused, it is enough. The one of low VF is recommended to be used.Moreover, the condenser for charge pump use the one which is very bigger than the gate capacitance on main side FET. 0.1µF to 1µF is recommended to be used.
R8 =
≅≅≅≅ 33.1(mΩΩΩΩ)
25 ×××× I1
+INE2
= 25 ×××× 3.5
2.90
4. Charge Current Setting Sense Resistor(SL1TTE33LOF : KOA) 33mΩ
When the +INE2 terminal voltage sets charge current to 3.5A by 2.90V, R8 is obtained by the following formula.
Fujitsu ASSP Product
18/20Power Management
MB39A107 Evaluation Board Rev1.0E
For 12.6V output
Vin=20V(max),Vo=12.6V,Io=4.5A,fosc=500kHz1.N-ch MOS FET(uPA2752(NEC) )
Main side VDS=30V, VGS=±20V, ID=8A, RDS(on)=25mΩ(Typ), Qg=10nC(Typ)Synchronous rectification sideVDS=30V, VGS=±20V, ID=8A, RDS(on)=25mΩ (Typ), Qg=10nC(Typ)
Drain current : Peak valueThe peak value of the drain current of FET should be in the rated current value of FET.When the peak value of the drain current of FET is assumed to be ID, ID is obtained by the following formula.
Main side
Synchronous rectification side
Vin-Vo2L
ton
≥≥≥≥ 3.5+-62 ×××× 5.2 ×××× 10
20-12.6××××
500 ×××× 10 31
×××× 0.63
ID ≥≥≥≥ Io+
≥≥≥≥ 5.40A
Vo2L
toff
≥≥≥≥ 3.5+-62 ×××× 5.2 ×××× 10
12.6××××
500 ×××× 10 31
×××× (1-0.63)
ID ≥≥≥≥ Io+
≥≥≥≥ 5.40A
Fujitsu ASSP Product
19/20Power Management
MB39A107 Evaluation Board Rev1.0E
2.Inductor(CDRH104R-5R2 : SUMIDA)5.2µH(tolerance : ±30%),rated current= 5.5A
L value in the full-load current condition:It is set that the peak to peak value of the ripple current becomes 1/2 or less of load currents.
Load current value which becomes continuous current condition.
Ripple current : peak valueThe peak value of the ripple current should be in the rated current value of the inductor. When the peak value of the ripple current is assumed to be IL, IL is obtained by the following formula.
Ripple current : peak to peak valueWhen the peak to peak value of the ripple current is assumed to be ∆IL, ∆IL is obtained by thefollowing formula.
L ≥≥≥≥2(Vin‐‐‐‐Vo))))
Ioton
2 ××××(20-12.6))))4.5
×××× 0.63××××500 ×××× 10
13≥≥≥≥
≥≥≥≥ 4.14µµµµH
Io ≥≥≥≥2LVo
toff
2 ×××× 5.2 ×××× 1012.6 ××××
500 ×××× 101
3 ××××(1-0.63)-6≥≥≥≥
≥≥≥≥ 897.0mA
Vin-Vo2L
ton
≥≥≥≥ 4.5 +-62 ×××× 5.2 ×××× 10
20-12.6××××
500 ×××× 10 31
×××× 0.63
IL ≥≥≥≥ Io+
≥≥≥≥ 5.40A
Vin-VoL
ton
=-65.2 ×××× 10
20-12.6××××
500 ×××× 10 31
∆∆∆∆IL =
≅≅≅≅ 1.79A
×××× 0.63
Fujitsu ASSP Product
20/20Power Management
MB39A107 Evaluation Board Rev1.0E
All Rights Reserved.The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU
sales representatives before ordering.The information and circuit diagrams in this document are presented as examples of semiconductor device
applications, and are not intended to be incorporated in devices for actual use.Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams.FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and
other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.).
CAUTION:Customers considering the use of our products in special applications where failure or abnormal operation may
directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.
MB39A107EVB
EV board part No. EV board version No.
MB39A107EV Board Rev 1.0
Note
12. 12. Ordering InformationOrdering Information
top related