Annual Report 2012 INFORMATION DEVICE SCIENCE LABORATORY Graduate School of Materials Science Nara Institute of Science and Technology

1

1. Preface 当研究室は，2009 年から始まった新しい研究室です．研究領域は，ディスプレイや超 LSI とい

った次世代情報機能素子です．シリコン半導体を中心に，無機材料，有機材料，生体超分子な

ど新しい材料を導入して，今までになかった初めての素子を作ります．モットーは，"自分の手

で世界初のデバイスを作る"ことです． 得られた成果は，国内ばかりでなく海外でも積極的に発表しています．

This lab is quite new, opening in April, 2009. In our lab, we study next generation devices such as displays or new functional LSIs. We fab-ricate new semiconductor devices based on Si by introducing new materials such as inor-ganic, organic, and bio-molecular films. Our motto is "Fabrication of world first device by our hands". Our results have been reported throughout the world. Prof. Yukiharu Uraoka

(From front-left) Kyohei NABESAKA, Yukihiro OSADA, Daisuke HISHITANI, (next line) Keisuke KADO, Satoshi URA-KAWA, He CHAO, Yunjian JIANG, (next line) Yukiharu URAOKA, Masahiro HORITA, Fuyuko TAKAO, Haruka YAMA-ZAKI, Satoshi SAIJO, Koji YOSHITSUGU, Takahiko BAN, Yana MULYANA, Hiroki KAMITAKE, Takahiro DOE, (next line) Ichiro YAMASHITA (collaborator), Hirofumi YAMAUCHI (collaborator), Kenji IWAHORI (collaborator), Ryoichi HONDA (collaborator), Ryota MATSUYAMA (collaborator), Tomoaki YOSHIDA (collaborator), Naofumi OKAMOTO (collaborator), Mutsunori UENUMA, Koji YAMASAKI, visitor, Yumi KAWAMURA, visitor, Emi MATCHIDA, Yasuaki ISHIKAWA, Yoshihiro UEOKA Table of Contents

1. Preface 1 2. People in the laboratory 2 3. Scientific contribution 5 4. List of Publications (published from 2012/04 to 2013/03) 16 5. Collaborations 26 6. Honor of Awards, and News Releases (2012/04 ~ 2013/03) 28 7. Excursion & Events 29 8. Dissertation 30 9. Carriers After Graduation 31 10. Scientific Instruments and Methods of Analysis 32 11. List of Members (as of 2013/05) 33 12. Site Plan 39

Department URL: http://mswebs.naist.jp/english/index.html

2

2. People in the laboratory 2.1 Thin Film Transistor Group Members: Yumi KAWAMURA, Emi MACHIDA, Li LU, Koji YAMASAKI, Yoshihiro UEOKA, Juan Paolo Bermundo, Haruka YAMAZAKI, Satoshi URAKAWA, Yukihiro OSADA, Daisuke HIS-HITANI, Masato HIRAMATSU, Masahiro MITANI, Shigekazu TOMAI, Masahiro HORITA, and Yasuaki ISHIKAWA Realization of high performance information terminal devices on glass or plastic film is our main objective. We are researching fabrication methods and characterization of silicon thin films by laser-ablation techniques and oxide semiconductor materials such as ZnO and a-InGaZnO. Highly reliable fabrication processing of TFTs with these materials is also our research topic.

シリコン薄膜にレーザーを照射させて作製する低温ポリシリコンや，a-InGaZnOなどの酸化物

半導体を用いた TFTを作製し，様々な特性・物性を評価解析することで高性能情報端末を目指

した研究をしています．

Green Laser annealing

System on Panel

Flexible Display

3

2.2 Bio-Nano-Process Group Members: Satoshi SAIJO, Hiroki KAMITAKE, Takahiko BAN, Chao HE, Keisuke KADO, Mutsunori UENUMA, and Bin ZHENG Bio-supramolecules have unique character such as, self-organization, and size uniformity at the nano-scale. We are paying a lot of attention to these unique functions of bio-supramolecules in order to enhance performance and/or functionalize transistor and memory devices. Our novel approach, which is blending bio-technology and semiconduc-tor-technology, has already produced high performance memory devices. We have started producing new functionalized devices as MEMS and bio-sensors with our novel process.

タンパクなどの生体超分子は，もともとナノスケールで均一なサイズであり，自己組織化能力

という優れた性質を持っています．私たちは，このバイオ系材料を，半導体プロセスに生かし

た非常にめずらしい研究を行っています．すでに，この新しいプロセスを使って，ディスプレ

イやメモリなどの作製に成功し，さらなる新しい応用として MEMS やバイオセンサー，太陽電池

の研究も開始しています．

実験風景

Bio nano process for electronic devices

ReRAM

Floating Gate Memory

Ferritin Application for Solar

Application for ReRAM

Co nanoparticles

4

2.3 Compound Material and Device Group Members: Takahiro DOE, Shinji ARAKI, Yana MULYANA, Koji YOSHITSUGU, Kyohei NA-BESAKA , Seiya YOSHINAGA, Yunjian JIANG, Masahiro HORITA, and Yasuaki ISHIKAWA We are researching to open the potential of compound material devices. We investigate a lot of printing techniques such as spin-on coating, spray-coating, screen-printing, nanoimprint processing, etc., and functional materials such as ferroelectric films, inorganic EL particles, graphene etc., in order to fabricate novel functionalized devices such as memory devices, transistors, sensors, EL devices, optical-switching devices and solar cells. 様々な機能材料（強誘電体や無機 EL材料、グラフェンなど）の可能性を広げる研究をしていま

す。また、プリント技術を用いたデバイスを作製し，プリンタブルエレクトロニクスの可能性

を探索しています．スピンオンコーティングやスプレーコーティング，スクリーン印刷，ナノ

インプリントプロセスなど，多種にわたるコーティング技術を駆使してメモリーやトランジス

タ，センサー，EL素子，太陽電池などのデバイス作製研究を行っています．

Compound material Printed device

Inorganic EL films

5

3. Research Progress 3.1 Improvement of gate voltage stress instability of aqueous solution

derived InZnO Thin-film Transistors Authors: L. LU, Y. OSADA, and Y. ISHIKAWA

Oxide thin-film transistors (TFTs) fabricated by solution process have attracted a lot of

attention in these several years because the solution process is a very simple and low cost method to fabricate thin films. For practical applications, it is crucial for oxide TFTs to ex-hibit voltage independent stability or reliability. However, little research on the stability of solution process derived oxide TFTs has been reported.

In our previous work, InZnO TFTs with a high mobility of 19.5 cm2/(V·s) were fabri-cated at a low annealing temperature of 300oC using an aqueous solution. In ad-dition, the positive gate voltage stress instability of these TFTs was investigated. Positively shifted threshold voltage (Vth) was observed after the gate voltage stress of 20 V applied on TFTs, as shown in Fig. 1 (a). The shift of Vth (∆Vth) after 1000 s was 3.4 V (Fig. 1(b)).

In order to understand the origin of this positively shifted Vth, thickness dependency of InZnO thin films for TFTs was investigated, as shown in Fig. 2 (a). As the thickness of InZnO thin film increased from 7 to 16 nm, the transfer characteristic negatively shifted and the on-current increased. On the contrary, no change in transfer characteristics was found when thicknesses of InZnO thin films were thicker than 16 nm. This indicated that the effective channel thickness (d) of these TFTs was in the range of 10<d<16 nm. Since the thickness of InZnO thin film in the TFT, which was investigated for instability, was 10 nm, the whole InZnO thin film worked as an active channel layer. It is suggested that the characteristic of the back channel region intensively affected transfer characteristics of TFTs. A model for field-induced adsorption of O2 at the back channel was considered. The adopted O2 captured carriers in InZnO thin films, thus a positively shifted Vth was ob-served.

In order to improve the instability, atomic layer deposition derived Al2O3 thin films were used to passivate the back-channel of InZnO TFTs. After the passivation, the ∆Vth significantly decreased from 3.4 to 1.9 V as shown in Fig. 1(b). The passivation of the back-channel region prevented the adsorption of O2, thus instability improved.

Figure 1: (a) Variation of transfer characteristics when positive gate voltage stress applied on TFTs. (b) ∆Vth of unpassivated and passivated TFTs as a function of voltage stress time.

1.E-14

1.E-12

1.E-10

1.E-08

1.E-06

1.E-04

1.E-02

-10 0 10 20 30

I ds(A

)

Vgs (V)

Before1s10 s100 s1000 s

Vgs=20 V

10-2

10-4

10-6

10-8

10-10

10-12

10-14

(a)

Vds=5 VW/L=500/50 µm (b)

UnpassivatedPassivated

Figure 2: (a) Transfer characteristics of TFTs with InZnO thin films of various thicknesses as chan-nel layers. (b) Model of the adsorption of O2 at the back channel region of TFTs, which induced gate voltage stress instability.

10-2

10-4

10-6

10-8

10-10

10-12

10-14

Vds=5 VW/L=500/50µm

(a)

InZnOSiO2

O2e-

Field-induced adsorption

O2

δ−

δ−

10 nm

(b)

6

3.2 Electronic structure analysis in a-InGaZnO/SiO2 interface by two- dimensional photoelectron spectroscopy Authors: Y. UEOKA, M. HORITA, and Y. ISHIKAWA

Amorphous InGaZnO (a-IGZO), which is one kind of transparent amorphous oxide

semiconductor, is expected as a material of thin-film transistors (TFTs) for next-generation

displays, because it has high channel mobility and allows us to fabricate at a low tempera-

ture compared with the conventional amorphous silicon TFTs. It has been reported that an

annealing process is required for a-IGZO to improve its TFT characteristics, and the change

of bonding states in a-IGZO by an annealing is one of the topics for discussion.

Display-type spherical mirror analyzer (DIANA) is a powerful tool for analyzing depth

profiles of electronic structures with element selectivity. The DIANA enables

two-dimensional angle-resolved measurements by the spherically-symmetric electronic

field as shown in Fig. 1. Unlike a conventional photoelectron spectrometer, which requires

sample and/or analyzer rotation, DIANA with very large acceptance angle of ±60o enables

acquisition of depth information with one shot of the X-ray irradiation. In this study, we

investigated an annealing effect for a-IGZO/SiO2 interface from the angle-resolved elec-

tronic structure analysis by DIANA.

The a-IGZO samples as shown in Fig. 2 were annealed in atmospheric (AT) and high

pressure water vapor (HPV) conditions. The emission of photoelectrons with low angle to

the incident X-ray direction mostly includes the information of the bulk region, while the

emission of photoelectrons with high angle mainly contains the information from the sur-

face region. Figure 3 shows binding energy (EB) of O 1s peaks in non-annealed (NA), AT and

HPV samples. The O 1s peaks of each sample shifted toward lower EB direction toward the

a-IGZO layer. This suggests that M (metal)-O bonds increased against Si-O bonds. In addi-

tion, it was observed that electron densities around O atoms increased by AT and HPV an-

nealing, because O 1s peaks of AT and HPV in the a-IGZO bulk region shifted to a lower EB

than those of NA. We consider that carrier densities in the a-IGZO were increased by the

annealing. Analysis of other elements is now underway. We will investigate the depth pro-

file of X-ray absorption near edge structures on a-IGZO/SiO2 interface as a future work.

Figure 1: Schematic illustration of DIANA Figure 2: Measurement setup

Figure 3: Angle-resolved O 1s peak EB of NA, AT and

HPV samples.

AKNOWLEDGMENT

We gratefully appreciate the

support of Dr. Nakamura, Dr.

Muro, Dr. Matsushita and

members of Surface and Mate-

rials Science Lab. This research

was performed at the BL25SU of

SPring-8 with the approval of

JASRI (Proposal No.

2012A1552, 2012B1663).

Surface

Sensitive

Bulk

Includeda-IGZO

SiO2

p+Si

<10 nm Low angle

High angle

0 20 40 60 80

531.5

532

532.5

533

Measurement angle (o)

Inte

nsity (

ab

s.

un

it)

NAATHPV

Surface

BulkO 1s

SiO2/IGZO

0 20 40 60 80

531.5

532

532.5

533

Measurement angle (o)

Inte

nsity (

ab

s.

un

it)

NAATHPV

SurfaceBulk

O 1sIGZOa-IGZO SiO2/a-IGZO

7

Figure 1: Polysilsesquioxane structure and passivated a-IGZO Bottom Gate TFT

Figure 2: Reliability of a) Unpassivated b) Me 60/ Ph 40 after NBS (Vgs = -20 V)

-20 -10 0 10 2010-1410-1310-1210-1110-1010-910-810-710-610-510-410-3

Gate Voltage, Vgs (V)

Dra

in C

urre

nt, I

ds (A

) Stress Time 0 s 100 s 1000 s 10000 s

b)

-10 0 10 20

a)

Stress Time 0 s 100 s 1000 s 10000 s

Figure 3: Reliability of a) Me 100 B) Me 60/ Ph 40 after NBIS (Vgs = -20 V; 10000 s)

a) b)

-20 -10 0 10 2010-1410-1310-1210-1110-1010-910-810-710-610-510-410-3

Gate Voltage, Vgs (V)

Dra

in C

urre

nt, I

ds (A

)

-10 0 10 20

Stress Time 0 s 100 s 1000 s 10000 s

Figure 4: Secondary Ion Mass Spectrometry depth profile of Hydrogen in the a-IGZO layer

0 20 40 60100

101

102

103

104

105

106

1.2

H (c

ount

s pe

r sec

ond)

Depth (nm)

IGZO

Me 100 Me 60/Ph 40 Unpassivated

3.3 Influence of polysilsesquioxane-based passivation layer on the elec-trical properties and stability of a-IGZO thin film transistors Authors: J. P. BERMUNDO, H. YAMAZAKI, and Y. ISHIKAWA

Amorphous In-Ga-Zn-O (a-IGZO) has

become a popular active channel material in thin-film transistors (TFTs) because of prop-erties such as a low fabrication temperature, high mobility, low threshold voltage (Vth) and small subthreshold swing. However, the sta-bility of the TFT is a problem especially if the TFT is unpassivated. The exposed back channel is vulnerable to degradation brought about by the environment, moisture, desorp-tion of oxygen and water, and post fabrication processes. The coating of passivation layers has become of interest to solve this problem. Several groups have already used passivation layers such as SiOx, TiOx, SiNx and Al2O3. However, most of these passivation layers have been fabricated using vacuum processes. In this research, we used a polysilsesquioxane (PSQ)-based passivation layer on an a-IGZO TFT that was fabricated using a simple solu-tion process. We also studied the effectiveness of the passivation layer in improving not only the temporal stability but also the stability against positive bias stress (PBS), negative bias stress (NBS), and negative bias illumination stress (NBIS).

Two passivation materials based on PSQ were used: polymethylsilsesquioxane for Sample “Me 100” and a copolymer of methylsilsesquioxane and phenylsilsesquioxane, with a methyl/phenyl ratio of 3:2, for Sample “Me 60/ Ph 40”. Figure 1 is the PSQ structure. The passivation was first spin-coated on the a-IGZO TFT at 3000 rpm for 15 s. Prebaking was then performed at 130oC for 90 s followed by post-baking in air at 300oC for 1 hour. Figure 1 also shows the structure of the passivated a-IGZO bottom gate TFT.

ZTFTs passivated with the PSQ-based passivation materials, especially samples pas-sivated by the copolymer (sample Me 60/ Ph 40), had good temporal stability and more im-portantly, stability against PBS, NBS, and NBIS. Figures 2 and 3 show the reliability after NBS and NBIS, respectively. The hump effect was suppressed for sample Me 60/ Ph 40 after NBS while there is only a small Vth shift after NBIS for the same sample. We believe that the increased hydrogen content in the a-IGZO layer (see Fig. 4) is responsible for the im-proved stability.

8

3.4 Highly reliable amorphous InGaZnO thin-film transistor using silicon nitride gate insulator Authors: H. YAMAZAKI, Y. ISHIKAWA, Y. UEOKA, M. FUJIWARA*, E. TAKAHASHI*, and Y. ANDOH*

* Nisshin Electric Co., Ltd.

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) have attracted much at-tention as promising materials for the driving devices in next generation displays. A deep understanding for the reliability of the electrical characteristics of a-IGZO TFTs is neces-sary for its various applications. The influence of hydrogen in gate insulators (GIs) on the reliability of a-IGZO TFTs has been actively discussed. In this work, we fabricated highly reliable TFTs with fluorinated SiNX GI containing low hydrogen volume. Through this study, we revealed the influence of hydrogen on reliability with several GIs such as fluorinated SiNX films and thermal SiO2 film.

In the initial state, the a-IGZO TFTs on fluorinated SiNX showed around 10 cm2/Vs for the field effect mobility, which was a comparable value with TFTs using SiO2. After the positive bias stress, the a-IGZO TFTs on fluorinated SiNX indicated considerably better stability for threshold voltage than that on SiO2. The threshold voltage shift (∆Vth) of TFTs with fluorinated SiNX and SiO2 was estimated as 0.8 V and 3.9 V, respectively. It should be noted that the ∆Vth of TFT on fluorinated SiNX, which were deposited with hydrogen gas added to the source gas, also exhibited values as low as 1.7 V. According to the impurity profiles of the hydrogen and fluorine in the SiNX layer on Si substrate measured by sec-ondary ion mass spectrometry, the fluorinated SiNX layers contained relatively low hydro-gen (~3.6×1020cm-3) compared with the conventional SiNX deposited by silane and ammonia gases (>4×1021cm-3), and a large amount of fluorine originated from the source gas. We as-sumed that fluorine plays an important role for improving the reliability of a-IGZO TFTs.

Figure1: Transfer curves after positive-biased-stress for a-IGZO TFTs utilized (a) thermal SiO2 (b) fluorinated SiNX, and (c) fluorinated SiNX with added hydrogen.

-10 0 10 2010-14

10-12

10-10

10-8

10-6

10-4

10-2

Dra

in c

urre

nt (A

)

Gate voltage (V)

W/L=90/10 μmVd=5 V

(b) fluorinated SiN X

-10 0 10 210-14

10-12

10-10

10-8

10-6

10-4

10-2

Dra

in c

urre

nt (A

)

Gate voltage (V)

(c) fluorinated SiN X+H

W/L=90/10 μmVd=5 V

-10 0 10 2010-14

10-12

10-10

10-8

10-6

10-4

10-2

Dra

in c

urre

nt (A

)

Gate voltage (V)

W/L=90/10 μmVd=5 V

(a) thermal SiO 2

initial

9

3.5 Polycrystalline silicon thin films crystallized by CO2 laser annealing Authors: K. YAMASAKI, M. HORITA, E. MACHIDA, and H. IKENOUE* * Kyusyu Univ.

Three-dimensional integration of polycrystalline silicon (poly-Si) thin film devices is a

promising technology for the realization of high-performance and multi-functional devices on large-scale substrates. The green laser annealing (GLA) method which we have studied is one of the formation processes for poly-Si thin films. The penetration length of the green laser (λ = 532 nm) for amorphous silicon (a-Si) is ~100 nm, which is larger than the stand-ard thickness of a-Si films for thin film devices (~50 nm). We have reported the simultane-ous crystallization of double-layered Si films by GLA; however, it is difficult to form high-quality lower layer films in double-layered Si structure by GLA because the laser en-ergy imparted to the lower layer is lower than that in the upper layer. We proposed two methods to solve this problem. The first is a method using germanium (Ge), which is crys-tallized by low laser energy and higher absorption coefficient. The second is the method using a CO2 laser which has an infrared wavelength. We introduce the method using the CO2 laser in this report. The CO2 laser (λ= 10.6 µm) is absorbed by SiO2 layers, and the penetration length of the CO2 laser for SiO2 is ~40 µm, which enables the absorption of equivalent laser energy into each layer of SiO2 films. We considered that CO2 laser an-nealing can realize the simultaneous crystallization of Si layers by heating from SiO2 films.

Figure 1 shows the sample structure before CO2 laser annealing. We carried out scanning electron microscope (SEM) measurements of Si films crystallized by CO2 laser annealing to estimate the grain size. Figure 2 shows SEM images of the Secco-etched surface of the Si films after the laser irradiation. For the irradiation at an energy of 82 mJ/cm2, the upper and lower layer of grain boundaries were observed, where the aver-age size of grains was approximately 2 µm. This result indicates that the simultaneous crystallization of a double-layered Si film by CO2 laser annealing can be achieved. To characterize the crystalline quality of the lower layer, Raman spectra measure-ment was carried out. Figure 3 shows the Raman spectra of the annealed lower layer of double-layered samples for various ir-radiated laser energy compared with single crystal-Si (c-Si). The intensity of the a-Si phase (480 cm-1) decreased with an increase in laser fluence. In addition, the peak positions shifted toward c-Si (520 cm-1). These indicate that the crystalline quality of the lower layer was improved with increasing laser fluence.

Figure 1: Illustration of double-layered Si before CO2 laser an-nealing.

SiN (buffer layer) 50 nm

SiO2 (buffer layer) 100 nm

Quartz (substrate)

SiO2 (inter layer) 50 nm

SiO2 (cap layer) 50 nm

Si (upper layer) 50 nm

Si (lower layer) 50 nm

82 mJ/cm2 82 mJ/cm2(a) Upper layer (b) lower layer

0

0.5

1

450500550

Norm

aliz

ed In

tens

ity [a

rb. u

nit]

Raman shift [cm-1]

64 mJ/cm282 mJ/cm2

c-Si

Ram

an sh

ift[c

m-1

]

64 71 82Energy density[mJ/cm2]

510

515

520

525

c-Si

Figure 2: SEM images of (a) upper and (b) lower layers of double-layer samples after laser annealing. The laser fluence is 82 mJ/cm2. A crystal grain is en-closed by a dashed line.

Figure 3: Raman spectra of annealed lower layer of double-layered samples for various irradiated laser fluence compared with single crystal-Si.

10

(a)Ferritin (b)Listeria Dps

Figure 4: Writing and erasing characteristics of NTGM. Figure 3: ID-VG characteristics of NFGM.

Figure 2: XRD pattern of Co-BND. Figure 1: SEM images of Co-BND arrays formed utilizing; (a)Ferritin (b)Listeria Dps.

3.6 Floating gate memory with high-density nanodots synthesized and arayed by listeria Dps Authors: H. KAMITAKE, and M. UENUMA

Nanodot-type floating gate memory (NFGM), with a two dimensional array of nanodots

as a floating gate, has high durability against charge leakage, because the nanodots store charges independently. Our group has researched NFGM fabricated using ferritin, a 12 nm cage-shaped protein with a nanoparticle (bio nano dot: BND) in its cavity. While this memory has the advantage of high durability, its disadvantage is writing and erasing speed. To improve writing and erasing characteristics, we focused on listeria Dps which is a 9.4 nm cage-shaped protein with a 4.5 nm cavity. Previous studies have suggested that the hyste-resis of metal-oxide semiconductor (MOS) capacitors fabricated utilizing listeria Dps was larger than that of the MOS capacitor fabricated utilizing Ferritin. The enlargement of the hysteresis indicates the improvement of writing and erasing characteristics. In this study, we demonstrate a nanodot-type floating gate memory with high-density Co-BND array formed utilizing listeria Dps.

SFigure 1 shows the scanning electron microscope image of Co-BND array formed uti-lizing Ferritin, and listeria Dps. The Co-BNDs were distributed on SiO2 surface, and the adsorption density of Co-BND array formed utilizing listeria Dps was 1.2×1012 cm-2, which is higher than that of the Co-BND array formed by ferritin. We measured the XRD pattern of Co-BNDs derived from listeria Dps (Fig. 2). This result indicates that the crystal struc-ture of Co-BND is Co3O4. In the previous research, it has been reported that Co-BND formed by ferritin is the same composition. ID-VG characteristics of NFGM fabricated using listeria Dps are shown in Fig. 3. ID-VG characteristics indicated a large memory window (wide hysteresis). This hysteresis was caused by the effective injection of electrons and holes into the Co-BND array. Figure 4 shows that the writing and erasing characteristics were improved significantly compared with that of the ferritin-utilized device, which had quite a low threshold voltage shift (less than 1 V) at 10-6 sec for writing or erasing time. This result also suggested that the memory works at low voltage (6 V). These results contribute to the realization of a next-generation memory.

11

Figure 1: TEM im-age of ferritin with Tantalum oxide na-noparticles.

Figure 3: I-V characteristic of ReRAM using single TaOX NP. Inset shows schematic image of memory structure.

Figure 2: SEM image of the placement of single TaOX NPs onto the designated position on the Ta surface.

Figure 4: Cycle endurance characteristic of ReRAM using TaOX NP.

3.7 Resistive random access memory using TaOx nanoparticles Authors: T. BAN, M. UENUMA, and I. YAMASHITA

Resistive Random Access Memory (ReRAM) is a promising

device as a next generation memory due to their simple structure and high scalability. ReRAM is a non-volatile and high-speed ac-cess memory utilizing two bistable resistances of high resistance state and low resistance state. Tantalum oxide (TaOX) based Re-RAM with endurance over 109 cycles and retention exceeding 10 years at 85ºC was reported. TaOX based ReRAM is promising for the development of high-density non-volatile memory.

However, conventional fabrication processes have almost reached their limits, suggesting that new fabrication processes are necessary to reduce memory cell size. To address the nanometric structure production issue, we have been studying a biological nanofabrication process, which is referred to as a “bio-nano-process” (BNP). BNP is based on the properties of protein molecules, atomic scale uniformity, controlled self-assembly, selective adsorption to the designated substrate area, etc. Protein molecules such as ferri-tin, can produce homogeneous nanoparticles (NPs) utilizing protein templates by “biomineralization”. The ferritin has a spherical cage structure with inner and outer diameters of 7 nm and 12 nm, re-spectively. Ferritin can also form NPs in its cavity due to the func-tion of biomineralization. In this study, we demonstrated a nano scale ReRAM development using a TaOX NP synthesized by ferri-tin protein.

We synthesized the TaOX NP utilizing ferritin protein as shown in Fig. 1. When the outer protein shell was removed by UV/O3 treatment, the NP diameter became 4.5 ±1 nm. The NP seems amorphous and very close to the stoichiometric Ta2O5 with a small amount of sub-oxidized Ta. These results were measured by TEM, XPS, FT-IR and XRD. For nano scale ReRAM, we demonstrated the placement of single TaOX NP onto the designated sub-strate area on the metal surface. The electrostatic interaction was used to selectively posi-tion the dots. As shown in Fig. 2, the single NP placement on designed APTES disk was confirmed. We fabricated a nanoscale ReRAM using single TaOX NP. We confirmed the re-sistive switching behavior in the fabricated the ReRAM (Fig. 3). Additionally the ReRAM achieved 103 cycles endurance as shown in fig. 4. We successfully produced a nano scale ReRAM utilizing specific feature of BNP.

12

Figure 1: Schematic image of GNP covered with ferritin as satellite.

Figure 6: Transmittance of the glass substrate with the GNPs.

400 600 800 10000

50

100

GNP30nm/SiO2 layer

Glass substrate

Wavelength (nm)

Tran

smitt

ance

(%)

GNP30nm

Figure 2: TEM image of the GNP covered with the ferritin as satellite

Figure 3: SEM image of the GNP on Si substrate.

Figure 4: TEM image of the GNP covered with SiO2 layer

400 600 8000

1

Wavelength (nm)

Abs

orba

nce

unit

30nm GNP

Au−SiO2Core Shell

Figure 5: Absorption of GNP solutions.

3.8 Plasmon absorption of gold nanoparticles coupled with por-ter-protein Authors: S. SAIJO, Y. ISHIKAWA, B. ZHEN, N. OKAMOTO, and I. YAMASHITA

At the surface of metal nanoparticles, the plasmon effect occurs, which enhances light

absorption. It is well-know that metal nanoparticles are prepared by an aggregation phe-nomenon enhanced by thermal annealing for nanometer-order thin metal films. However, it is difficult to form uniform particle size and position the location of the nanoparticles.

We have reported that specific supramolecules could prepare uniform size metal na-noparticles and can allocate the nanoparticles in arbitrary position. As a supramolecule, we utilized ferritin, a cage-shaped protein with a hollow cavity. We modify ferritins by the peptides which can bind to the Ti as selectively-coupled. The supramolecules mediate ab-sorption between nanoparticles and substrate. The adsorbed gold nanoparticles (GNPs) on the surface of the Si substrate change their reflection behavior since the GNP enhances plasmon absorption. By our original technique we prepared a very uniform nanoparticle array without aggregation. We report the usability of our process to fabricate and disperse GNPs at a given-place on the Si substrate surface and the plasmon effect enhancement. This technique will be applied to the improvement of solar cell performances by the plas-mon absorption effect.

We designed two methods for locating the GNP on the substrate. First, we covered the GNP with the apo-ferritins as satellites (Figs. 1, 2). These particles can couple with the Si substrate. We measured the transmittance of the glass substrate with the GNPs to confirm the plasmon effect around 520nm, which is the specific wavelength of plasmon absorption by the GNP (Fig 5). Secondly, we covered the GNPs with a SiO2 insulator layer to preserve the GNP dipole. Figure 4 shows the TEM image of the GNP covered by SiO2. We dropped the nanoparticle solution on a glass substrate. Fig. 6 shows the light absorption increased around 520-530 nm, indicating the plasmon effect occurred on both the Si and glass sub-strate. We successfully delivered the GNP on the surface of the substrate and observed plasmon absorption.

13

3.9 Fabrication of the Functional Semiconductor Nanoparticles via Elec-tro Spray Printing Process Authors: T. DOE, K. NABESAKA, and Y. ISHIKAWA

Printing techniques are strongly expected for realizing flexible and large-area elec-

tronics. An electro-spray deposition (ESD) method is one of spray printing process to pre-pare functional nanoparticles via dry and simple aerosol process as shown Fig. 1. Electro spraying produces micro/nanodroplets by applied high-voltage. When the optimal high-voltage is applied, the solution, which is inserted to spray nozzle, forms a circular cone shape at nozzle tip toward the substrate. The optimal spray configuration is called “Cone-jet mode”, and the optimal and stable spray configuration produces micro/nanoscale droplets continuously. We developed the electro-spray system for the fabrication of semiconductor nanoparticles.

We have reported the fabrication of zinc sulfide (ZnS) nanoparticles in ESD method. In semiconductor nanoparticles, the luminescent property increases due to a quantum con-finement effect. In order to show the quantum confinement effect in ZnS nanoparticles, we need to reduce their diameter below 10 nm. We introduce the fabrication of ZnS nanoparti-cles whose diameters are below 10nm by the ESD, and the method to downsize the nano-particle diameter taking into account the semi-theoretical and experimental analysis. Fig-ure 2 shows a TEM image of ZnS nanoparticles and a particle diameter distribution. We successfully obtained ZnS nanoparticles with 9.7 nm as an average diameter. Addition to that, we found that the diameter dependence was roughly corresponded with the semi-theoretical curve. It means that the semi-theoretical equation which is reported in micrometer scale droplets, could explain the dependence of nanoscale particle sizes on the solution flow rate in this study. We are trying to characterize the optical properties of the ZnS nanoparticles having single nanoscale.

We are also researching the fabrication of iron sulfide (FeS2) nanoparticles for photo-voltaic devices. FeS2 is unstable material during the pyrolysis reaction in air atmosphere. Hence, we prepared sulfuration furnace for the formation of high quality FeS2 nanoparti-cles. The grove box was also prepared for handling the precursors in N2 atmosphere. Figure 3 shows an optical image of fabricated FeS2 particles by the ESD. XRD identified the parti-cles as FeS2. The large diameter particles were observed, suggesting that further optimiza-tion of spray condition should be carried out as demonstrated in ZnS case.

In printed electronics group, this research is assigned to produce the quantum dot materials through spray printing process. We strongly believe that the printed technologies and their devices have a key role as cheaper and large area electronics.

Figure 2: TEM image of ZnS nanoparticles.

Figure 1: Outline of research purpose using ESD method.

Figure 3: Optical image of FeS2 nanoparticles.

14

3.10 Research on formation of high-quality Al2O3 gate dielectric on GaN Authors: K. YOSHITSUGU, and M. HORITA

In gallium nitride (GaN) based heterostructure field effect transistors (HFETs) that

are expected as next generation power devices, a large leakage current and normally-on

operation remain key issues. As solutions, the metal-insulator-semiconductor (MIS) struc-

ture is a strong candidate. Aluminum oxide (Al2O3) films have been attracting much atten-

tion for application as gate insulators because of their excellent physical and chemical

properties. For the Al2O3 film deposition, the atomic layer deposition (ALD) method is

known for its good film uniformity and pinhole-free film deposition. As the oxidant, there

are two types: H2O vapor or O3 are used in thermal-ALD (T-ALD), and O2 plasma is used in

plasma-assisted ALD (PA-ALD). The O2 plasma has higher reactivity than H2O vapor or O3.

Therefore, it is expected that films with low residual product can be formed in PA-ALD. In

this study, we investigated the insulating properties of n-GaN MIS capacitors with Al2O3

gate dielectric deposited by PA-ALD.

Figure 1 shows the cross section of an ALD Al2O3/n-GaN MIS capacitor investigated in

this study. After the pretreatment of n-GaN surface in HCl solution, Ti/Al electrode for

ohmic contact was formed by lift-off process. Then, the sample was alloyed at 650°C for 30

seconds in ambient nitrogen. A 20 nm-thick Al2O3 film was deposited at 300°C using tri-

methylaluminum (TMA: Al(CH3)3) and oxygen radical that is induced by O2 plasma ignition.

The plasma ignition time was 1.0 seconds per cycle. For comparison, the samples of Al2O3

deposited by T-ALD are also prepared. O3 is used as the oxidants of Al2O3 in T-ALD. Finally,

the gate electrode of Ti/Al was formed by liftoff process. It should be noted that all samples

were not annealed after the Al2O3 deposition.

The current density versus electric field (J-E) characteristics of Al2O3/n-GaN MIS ca-

pacitors are shown in Fig. 2(a), (b). The breakdown field, EBD, defined as catastrophic

breakdown, and the leakage current density, JLEAK are obviously different between the

T-ALD and PA-ALD samples. The EBD of PA-ALD is 8.2 MV/cm whereas that of T-ALD is 6.8

MV/cm. The JLEAK at 3 MV/cm of PA-ALD reached 2.2×10-8 A/cm2 whereas that of T-ALD

was 1.9×10-7 A/cm2. This level of performance suggests that PA-ALD Al2O3 films are very

promising for a gate dielectric in GaN power devices. The leakage characteristics of T-ALD

and PA-ALD are supposed to include several current conduction mechanisms. To analyze

the dominant current conduction mechanism, we considered several models across the gate

insulator: Schottky emission (SE), Poole-Frenkel emission (PFE), trap-assisted tunneling

(TAT) and Fowler-Nordheim tunneling (FNT). The gate leakage current mechanisms of

PA-ALD consist of SE and FNT whereas those of T-ALD consist of SE, TAT and FNT. In

addition, we found that TAT trap energy was 1.0 eV below the conduction band minimum of

Al2O3. Through this study, the results suggest that PA-ALD can realize TAT trap-free film

deposition.

Figure 1: A cross section of

fabricated Al2O3/n-GaN MIS

capacitor.

Si sub.

Gate

buffer layer

Al2O3 (20 nm)Ti/Al Ti/Al

n-GaN (1000 nm)Si: 2×1017 cm-3

50 μm 20 μm

0 1 2 3 4 5 6 7 8 9 1010-10

10-9

10-8

10-7

10-6

10-5

10-4

10-3

10-2

10-1

100

101

Electric field (MV/cm)

Curr

ent

density (

A/c

m2)

T-ALD

SE

TAT

FNT

0 1 2 3 4 5 6 7 8 9 10

Electric field (MV/cm)

PA-ALD

SE

FNT

Figure 2: J-E curves of n-GaN MIS capacitor with Al2O3 depos-

ited by (a) T-ALD or (b) PA-ALD, and current conduction

mechanisms.

(b) PA-ALD (a) T-ALD

15

3.11 Electrical characteristics of UV/ozone-treated graphene Authors: Y. MULYANA, M. HORITA, Y. ISHIKAWA, and S. KOH

Due to its exceptional physical and electronic properties, such as high field-effect

charge mobility at room temperature, graphene holds great promise for faster and thinner replacements to silicon transistors and other applications in the next-generation of elec-tronics [1]. However, unlike conventional semiconductors such as silicon, the zero band-gap of pristine graphene makes graphene-based devices difficult to be electrically switched off completely, resulting in a small ON/OFF ratio. In efforts to tailor its electrical properties, significant research activities in the field of chemical functionalization of graphene have been actively pursued. An alternative approach for oxidizing graphene using reactive atomic oxygen in ultrahigh vacuum forming chemically homogeneous and thermally re-versible graphene oxide has been recently reported [2]. Nevertheless, changes in the elec-trical properties of graphene before and after the oxidation are poorly studied and remain to be fully investigated.

In this study, the changes in electrical properties of graphene after being oxidized via UV/ozone treatment are investigated and the reversibility is also inspected. The gra-phene-based FET’s I-V characteristics after the oxidation are shown in Fig. 1. A bilayer graphene with a length of 10 μm and a width of 3 μm was used as a channel material in this FET. After oxidizing the graphene-based FET by conducting UV-ozone treatment where the temperature of the hot plate was 25ºC for 3 minutes, a decrease in conductivity was ob-served, but on the other hand the electron mobility remained unchanged (Fig. 1, 1→2). Reactive oxygen atoms may chemically react with carbon atoms of graphene during the UV/ozone treatment. Because a certain number of πelectrons of graphene, which act as charge carriers, were used to form the chemical bonds between oxygen and the carbon at-oms of graphene, the number of charge carriers decreased and this could have led to the degradation of conductivity after the oxidation [3]. In addition, by determining the contact resistance at Au/TiN electrode-graphene interface by the transfer length method (TLM), as shown in Fig. 2, it was found that the oxidation did not change the contact resistance [4]. In fact, from the result of TLM measurements, it is confirmed that the sheet resistance of the graphene layer increased as a result of the oxidation. Furthermore, after H2/Ar annealing the oxygen-doped graphene at a temperature of 300ºC for 2 hours, the electrical character-istics such as conductivity and carrier mobility recovered to the level before the oxidation (Fig. 1, 3→4). This result suggests that the oxidation, or oxygen-doping, of graphene via UV/ozone treatment is thermally reversible.

55

50

45

40

35

30

25

20

Dra

in C

urre

nt (µ

A)

-40 -20 0 20 40

Back Gate Voltage (V)

After the third annealing After the second oxidation 24 Hours after the second oxidation After the fourth annealing

Drain Voltage : 30 mV

Figure 1: I-V characteristics of gra-phene-based FET after the oxidation and reduction process

Figure 2: Result of TLM measurement before and after the oxidation process [1] A. K. Geim and K. S. Novoselov, Nat. Mater. 6 (2007) 183. [2] Md. Zakir Hossain, et al., Nat. Chem. 4 (2012) 305. [3] N. Leconte, et al., Nano Lett. 4 (2010) 4033. [4] K. Nagashio, et al., Jpn. J. Appl. Phys. 49 (2010) 051304.

16

4. List of Publications (published 2012/04 ~ 2013/03)

Academic Journals 1 S. Kumagai, H. Murase, T. Tomikawa, S. Ogawa, I. Yamashita, Y. Uraoka, and M. Sa-

saki, “Controlling Crystallization Structures in Thin Si Film for Improving Character-istics of MEMS Resonators”, Mater. Res. Soc. Symp. Proc., 1427, mrss12-1427-b-9-3, (2012). (Collaboration with Toyota Technological Inst. and Mesoscopic Mater. Sci. Lab., NAIST)

2 L. Lu, M. Echizen, T. Nishida, Y. Ishikawa, and Y. Uraoka, “Low-Temperature Fabrica-tion of Solution-Processed InZnO Thin-Film Transistors with Si Impurities by UV/O3-Assisted Annealing”, AIP Adv., 2, 032111, (2012).

3 Y. Ueoka, M. Fujii, H. Yamazaki, M. Horita, Y. Ishikawa, and Y. Uraoka, “Analysis of Electron Traps in a-IGZO Thin Films after High Pressure Vapor Annealing by Capaci-tance-Voltage Method”, Mater. Res. Soc. Symp. Proc., 1436, mrss12-1436-k-05-28, (2012).

4 M. M. Ombaba, T. Hasegawa, L. Lu, Y. Yasuda, M. Kimura, T. Nishida, S. Koh, Y. Uraoka, and M. S. Islam, “Highly Flexible, Transparent and Electrically Conducting Silver Nanoparticles Films Enabled by Controlled Sedimentation”, Mater. Res. Soc. Symp. Proc., 1436, mrss12-1436-k-8-35, (2012). (Collaboration with Univ. of California, Davis, Ryukoku Univ., and Ultrafast Photonics Lab., NAIST)

5 T. Hashimoto, N. Zettsu, B. Zheng, M. Fukuta, M. Fukuta, I. Yamashita, Y. Uraoka, and H. Watanabe, “Practical Protein Removal Using Atmospheric-Pressure Helium Plasma for Densely Packed Gold Nanoparticle Arrays Assembled by Ferritin-Based Encapsula-tion/Transport System”, Appl. Phys. Lett., 101, 073702, (2012). (Collaboration with Osaka Univ. and Mesoscopic Mater. Sci. Lab., NAIST)

6 B. Zheng, M. Uenuma, N. Okamoto, R. Honda, Y. Ishikawa, Y. Uraoka, and I. Yama-shita, “Construction of Au Nanoparticle/Ferritin Satellite Nanostructure”, Chem. Phys. Lett., 547, 52, (2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST)

7 L. Lu, T. Nishida, M. Echizen, Y. Ishikawa, K. Uchiyama, T. Shiosaki, and Y. Uraoka, “Thermally Stimulated Current Analysis of Defects in Sol-Gel Derived SrTa2O6 Thin-Film Capacitors”, Jpn. J. of Appl. Phys., 51, 09LA18, (2012). (Collaboration with Tsuruoka Nat'l Col. Tech. and Shibaura Inst. Tech.)

8 M. Kobayashi, S. Tomita, K. Sawada, K. Shiba, H. Yanagi, I. Yamashita, and Y. Uraoka, “Chiral Meta-Molecules Consisting of Gold Nanoparticles and Genetically Engineered Tobacco Mosaic Virus”, Opt. Exp., 20, 024856, (2012). (Collaboration with Cancer Inst. JFCR, Quantum Mater. Sci. Lab., NAIST, SPring-8, and Mesoscopic Mater. Sci. Lab., NAIST)

9 L. Lu, T. Nishida, M. Echizen, Y. Ishikawa, K. Uchiyama, and Y. Uraoka, “Effects of Si and Ti impurities on Electrical Properties of Sol-Gel-Derived Amorphous SrTa2O6 Thin Films by UV/O3 Treatment”, Appl. Phys. A, , , (2012). (Collaboration with Tsuruoka Nat'l Col. Tech.)

10 S. Kumagai, H. Murase, S. Miyachi, N. Kojima, Y. Oshita, M. Yamaguchi, I. Yamashita, Y. Uraoka, and M. Sasaki, “Improving Crystallinity of Thin Si Film for Low-Energy-Loss Micro-/Nano-Electromechanical Systems Devices by Metal-Induced Lateral Crystalliza-tion Using Biomineralized Ni Nanoparticles”, Jpn. J. of Appl. Phys., 51, 11PA03, (2012). (Collaboration with Toyota Technological Inst. and Mesoscopic Mater. Sci. Lab., NAIST)

11 E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, and H. Ikenoue, “Crystallization to Polycrystalline Silicon Thin Film and Simultaneous Inactivation of Electrical Defects by

17

Underwater Laser Annealing”, Appl. Phys. Lett., 101, 252106, (2012). (Collaboration with Kyushu Univ.)

12 S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Fu-ruta, M. Horita, Y. Ishikawa, and Y. Uraoka, “Thermal Analysis of Amorphous Oxide Thin-Film Transistor Degraded by Combination of Joule Heating and Hot Carrier Ef-fect”, Appl. Phys. Lett., 102, 053506, (2013). (Collaboration with Idemitsu Kosan Co,. Ltd. and Kochi Univ. Tech.)

International Conference and Symposium 1 Y. Ueoka, M. Fujii, H. Yamazaki, M. Horita, Y. Ishikawa, and Y. Uraoka, “Analysis of

Electron Traps in a-IGZO Thin Films after High Pressure Vapor Annealing by Using the Capacitance-Voltage Method”, Abst. 2012 Mater. Res. Soc. Spring Meeting, K5.28, (San Francisco, USA, Apr, 2012).

2 M. M. Ombaba, L. Lu, Y. Yasuda, T. Hasegawa, Y. Uraoka, M. Kimura, S. Koh, and M. S. Islam, “Highly Flexible, Transparent and Electrically Conducting Silver Nanoparti-cles Films Enabled by Controlled Sedimentation”, Abst. 2012 Mater. Res. Soc. Spring Meeting, K8.35, (San Francisco, USA, Apr, 2012). (Collaboration with Univ. of Califor-nia, Davis, Ryukoku Univ., and Ultrafast Photonics Lab., NAIST)

3 S. Kumagai, H. Murase, T. Tomikawa, S. Ogawa, I. Yamashita, Y. Uraoka, and M. Sa-saki, “Controlling Crystallization Structures in Si Thin Film for Improving Character-istics of MEMS Resonator”, Abst. 2012 Mater. Res. Soc. Spring Meeting, B9.3, (San Francisco, USA, Apr, 2012). (Collaboration with Toyota Technological Inst. and Mesoscopic Mater. Sci. Lab., NAIST)

4 Y. Mulyana, M. Horita, Y. Ishikawa, Y. Uraoka, and S. Koh, “Characterization of Gra-phene Based Field Effect Transistors Using Nano Probing Microscopy”, Proc. 2012 Int'l Meeting for Future of Electron Devices, Kansai, PC-06 (p.136), (Osaka, Japan, May, 2012). (Collaboration with Ultrafast Photonics Lab., NAIST)

5 K. Yoshitsugu, K. Ohara, N. Hattori, M. Horita, Y. Ishikawa, and Y. Uraoka, “Effect of High-Pressure Deuterium Oxide Annealing on Al2O3 Deposited by Plasma-Assisted Atomic Layer Deposition at Low Temperature”, Proc. 2012 Int'l Meeting for Future of Electron Devices, Kansai, B-1 (p.48), (Osaka, Japan, May, 2012). (Collaboration with Mitsui Eng. & Shipbld. Co., Ltd.)

6 H. Kamitake, K. Ohara, M. Uenuma, B. Zheng, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Nanodot-Type Floating Gate Memory with High-Density Nanodot Array Formed Utilizing Listeria Ferritin”, Proc. 2012 Int'l Meeting for Future of Electron De-vices, Kansai, B-2 (p.50), (Osaka, Japan, May, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST)

7 Y. Ueoka, M. Fujii, H. Yamazaki, M. Horita, Y. Ishikawa, and Y. Uraoka, “Analysis of Electron Traps in SiO2/IGZO Interface by Cyclic Capacitance-Voltage Method”, Proc. 2012 Int'l Meeting for Future of Electron Devices, Kansai, C-2 (p.58), (Osaka, Japan, May, 2012).

8 T. Doe, S. Araki, M. Horita, T. Nishida, Y. Ishikawa, and Y. Uraoka, “Dependence of Semiconductor Nanoparticle Size on Spray Condition in Electro-Spray Deposition Method”, Proc. 2012 Int'l Meeting for Future of Electron Devices, Kansai, C-3 (p.60), (Osaka, Japan, May, 2012).

9 H. Yamazaki, M. Fujii, Y. Ueoka, Y. Ishikawa, M. Fujiwara, E. Takahashi, and Y. Uraoka, “Highly Reliable a-InGaZnO Thin Film Transistors with New SiNx Gate Insu-lators”, Proc. 2012 Int'l Meeting for Future of Electron Devices, Kansai, C-4 (p.62), (Osaka, Japan, May, 2012). (Collaboration with Nissin Electric Co., Ltd.)

18

10 S. Araki, M. Zhang, T. Doe, L. Lu, M. Horita, T. Nishida, Y. Ishikawa, and Y. Uraoka, “Fabrication of Nano-Patterns Using Quick Gel-Nanoimprint Process”, Proc. 2012 Int'l Meeting for Future of Electron Devices, Kansai, C-5 (p.64), (Osaka, Japan, May, 2012).

11 H. Kamitake, K. Ohara, M. Uenuma, B. Zheng, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Nanodot-Type Floating Gate Memory with High-Density Nanodot Array Formed Utilizing Listeria Dps”, Proc. 2012 IEEE Silicon Nanoelectronics Workshop, P1-6 (p.89), (Honolulu, USA, Jun, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST)

12 Y. Kawamura, M. Tani, N. Hattori, N. Miyatake, Y. Ishikawa, and Y. Uraoka, “Com-parison between ZnO Films Grown by Plasma-Assisted Atomic Layer Deposition Using H2O Plasma or O2 Plasma as Oxidant”, Proc. 12th Int'l Conf. on Atomic Layer Deposi-tion, MA-41 (p.225), (Dresden, Germany, Jun, 2012). (Collaboration with Mitsui Eng. & Shipbld. Co., Ltd.)

13 S. Araki, M. Zhang, T. Doe, L. Lu, M. Horita, T. Nishida, Y. Ishikawa, and Y. Uraoka, “Fabrication of Zinc Oxide Nano-Patterns by Quick Gel-Nanoimprint Process toward Optical Switching Devices”, Proc. 19th Int'l Workshop on Active-Matrix Flatpanel Dis-plays and Devices, 3-2 (p.29), (Kyoto, Japan, Jul, 2012).

14 Y. Kawamura, M. Horita, Y. Ishikawa, and Y. Uraoka, “Effects of Gate Insulator on Thin Film Transistor with ZnO Channel Layer Deposited by Plasma Assisted Atomic Layer Deposition”, Proc. 19th Int'l Workshop on Active-Matrix Flatpanel Displays and Devices, P-126 (p.179), (Kyoto, Japan, Jul, 2012).

15 H. Yamazaki, M. Fujii, Y. Ueoka, Y. Ishikawa, M. Fujiwara, E. Takahashi, and Y. Uraoka, “Highly Reliable a-IGZO TFTs with SiNx Gate Insulator deposited by SiF4/N2”, Proc. 19th Int'l Workshop on Active-Matrix Flatpanel Displays and Devices, P-22 (p.163), (Kyoto, Japan, Jul, 2012). (Collaboration with Nissin Electric Co., Ltd.)

16 M. Uenuma, B. Zheng, K. Bundo, M. Horita, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Cu Nanoparticle Induced Crystallization of Amorphous Ge Film Using Ferritin”, Proc. 19th Int'l Workshop on Active-Matrix Flatpanel Displays and Devices, P-36 (p.227), (Kyoto, Japan, Jul, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST)

17 E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, and H. Ikenoue, “Crystallization of Polycrystalline Silicon Films by Underwater Laser Annealing and Its Application to Thin Film Transistors”, Proc. 19th Int'l Workshop on Active-Matrix Flatpanel Displays and Devices, P-9 (p.111), (Kyoto, Japan, Jul, 2012). (Collaboration with Kyushu Univ.)

18 M. Horita, E. Machida, Y. Kawamura, Y. Ishikawa, H. Ikenoue, and Y. Uraoka, “(In-vited) Super Low Temperature Fabrication of Thin Film Transistors with Polycrystal-line Si and Oxide Semiconductor Materials”, Proc. The 12th Int'l Meeting on Infor-mation Display, 2-1 (p.13), (Daegu, Korea, Aug, 2012). (Collaboration with Kyushu Univ.)

19 L. Lu, M. Echizen, T. Nishida, Y. Ishikawa, K. Uchiyama, and Y. Uraoka, “Low Tem-perature Fabrication of Wet-Processed ZnO-Based Thin Film Transistors Based on the Investigation of Temperature Dependency”, Abst. The 2012 International Conference on Flexible and Printed Electronics, S15-P3, (Tokyo, Japan, Sep, 2012). (Collaboration with Tsuruoka Nat'l Col. Tech.)

20 T. Doe, Y. Ishikawa, S. Araki, M. Horita, and Y. Uraoka, “Diameter Control of ZnS Par-ticles in Nano-Scale by Electro Spray Deposition Method”, Abst. The 2012 International Conference on Flexible and Printed Electronics, S26-P2, (Tokyo, Japan, Sep, 2012).

21 Y. Kawamura, M. Horita, Y. Ishikawa, and Y. Uraoka, “Highly-Reliable and Low-Temperature-Processed ZnO Thin-Film Transistors Using Plasma-Assisted Atomic Layer Deposition”, Proc. 7th Int'l Workshop on Zinc Oxide and Related Mat., Poster 186

19

(p.295), (Nice, France, Sep, 2012). 22 T. Doe, Y. Ishikawa, S. Araki, M. Horita, and Y. Uraoka, “Diameter Control of ZnS Par-

ticles in Nano-Scale by Electro Spray Deposition Method”, Abst. 38th Int'l Micro and Nano Eng. Conf., P106-280 (p.35), (Toulouse, France, Sep, 2012).

23 Y. Ueoka, F. Matsui, N. Maejima, H. Matsui, H. Yamazaki, S. Urakawa, M. Horita, Y. Ishikawa, H. Daimon, and Y. Uraoka, “Depth-Resolved Electronic Structure Analysis of IGZO/SiO2 Interface by Two-Dimensional Photoelectron Spectroscopy”, Proc. 2012 Int'l Conf. on Sol. Stat. Dev. and Mat., PS-6-24L (p.220), (Kyoto, Japan, Sep, 2012). (Collab-oration with Surf. & Mat. Sci. Lab., NAIST)

24 H. Kamitake, K. Ohara, M. Uenuma, B. Zheng, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Floating Gate Memory with High-Density Nanodot Array Formed Utilizing Ti-Binding Dps”, Proc. 2012 Int'l Conf. on Sol. Stat. Dev. and Mat., G-1-3 (p.931), (Kyoto, Japan, Sep, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST)

25 M. Uenuma, T. Ban, B. Zheng, M. Horita, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Effects of Guided Filament Formation in NiO-ReRAM Using Bio-Nanoparticle”, Proc. 2012 Int'l Conf. on Sol. Stat. Dev. and Mat., G-3-1 (p.951), (Kyoto, Japan, Sep, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST)

26 K. Yoshitsugu, M. Horita, Y. Ishikawa, and Y. Uraoka, “Reforming of Al2O3 Gate Die-lectric on n-GaN by High-Pressure Water Vapor Annealing”, Abst. Int'l Workshop on Nitride Semicond. 2012, TuP-LN-11 (p.310), (Sapporo, Japan, Oct, 2012).

27 L. Lu, M. Echizen, T. Nishida, Y. Ishikawa, K. Uchiyama, and Y. Uraoka, “Low-Operating-Voltage ZnO-Based Thin Film Transistors Using High-k SrTa2O6”, 4th Int'l Symp. on Transparent Conductive Mat., 83, (Crete, Greece, Oct, 2012). (Collabora-tion with Tsuruoka Nat'l Col. Tech.)

28 S. Saijo, B. Zheng, I. Yamashita, Y. Ishikawa, and Y. Uraoka, “Novel Delivery Process of High Dense Gold Nanoparticles on Si Substrate to Introduce Plasmon Absorbance”, Abst. 25th Int'l Mircoprocsses and Nanotechnology Conf., 31B-2-3,(Kobe, Japan, Oct, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST)

29 K. Kado, T. Ban, M. Uenuma, Y. Kakihara, B. Zheng, M. Horita, Y. Ishikawa, I. Yama-shita, and Y. Uraoka, “Magnetite Bio-nanoparticle for Nano Resistive Memory”, Abst. 25th Int'l Mircoprocsses and Nanotechnology Conf., 31B-3-4,(Kobe, Japan, Oct, 2012).

30 T. Ban, M. Uenuma, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Selective Adsorption of Ta2O5 Nanoparticles Synthesized by Biomineralization”, Abst. 25th Int'l Mircoprocsses and Nanotechnology Conf., 2P-11-45,(Kobe, Japan, Oct, 2012).

31 K. Yoshitsugu, M. Horita, Y. Ishikawa, and Y. Uraoka, “Leakage Current Characteris-tics of n-GaN MOS Capacitor with Al2O3 Gate Dielectric Deposited by Plasma-Assisted Atomic Layer Deposition”, Abst. 9th Int'l Conf. on Adv. Semicond. Devices and Mi-crosystems, Session3-3, (Smolenice, Slovakia, Nov, 2012).

32 T. Ban, M. Uenuma, M. Horita, Y. Ishikawa, and Y. Uraoka, “Characterization and Ap-plication of Ta2O5 Bio-Nanoparticles”, Abst. 2012 GIST/NCTU/NAIST Joint Symp. on Advanced Materials, F5 (p.52), (Taiwan, Chaina, Nov, 2012).

33 H. Yamazaki, Y. Ueoka, Y. Ishikawa, M. Fujiwara, E. Takahashi, Y. Ando, and Y. Uraoka, “Reliability Improvement of a-IGZO Thin-Film Transistors Using SiNx Gate Insulator Deposited by SiF4/N2 ”, Abst. 2012 Mater. Res. Soc. Fall Meeting, Z9.23, (Boston, USA, Nov, 2012). (Collaboration with Nissin Electric Co., Ltd.)

34 E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, and H. Ikenoue, “Local Characterization of Defect Sites at Grain and Grain Boundary of Polycrystalline Silicon Thin Films and Their Effect on Device Performance”, Abst. 2012 Mater. Res. Soc. Fall Meeting, UU6.09,

20

(Boston, USA, Nov, 2012). (Collaboration with Kyushu Univ.) 35 E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, T. Okuyama, and H. Ikenoue, “For-

mation of Polycrystalline Silicon Films on Plastic Films by Underwater Laser Annealing at Super Low-Temperature”, Proc. The 19th Int'l Display Workshops, FLX1/AMD2-3 (p.303), (Kyoto, Japan, Dec, 2012). (Collaboration with TOYOBO Co., Ltd. and Kyushu Univ.)

36 L. Lu, Y. Osada, Y. Kawamura, T. Nishida, Y. Ishikawa, and Y. Uraoka, “High Perfor-mance Indium Zinc Oxide Thin-Film Transistors Fabricated by Solution-Process at Low Temperature”, Proc. The 19th Int'l Display Workshops, FLX3-4L (p.771), (Kyoto, Japan, Dec, 2012).

37 H. Yamazaki, Y. Ishikawa, Y. Ueoka, M. Fujiwara, E. Takahashi, Y. Ando, and Y. Uraoka, “The Influence of New SiNx Gate Insulator in a-InGaZnO Thin Film Transis-tors”, Proc. The 19th Int'l Display Workshops, AMD7-3 (p.843), (Kyoto, Japan, Dec, 2012). (Collaboration with Nissin Electric Co., Ltd.)

38 Y. Ueoka, N. Maejima, H. Matsui, F. Matsui, M. Morita, S. Kitagawa, M. Fujita, K. Yasuda, H. Yamazaki, S. Urakawa, M. Horita, Y. Ishikawa, H. Daimon, and Y. Uraoka, “Analysis of Electronic-Structural Change in a-InGaZnO by High Pressure Water Vapor Annealing”, Proc. The 19th Int'l Display Workshops, AMDp1-7 (p.887), (Kyoto, Japan, Dec, 2012). (Collaboration with Surf. & Mat. Sci. Lab., NAIST)

39 T. Nonaka, Y. Uraoka, N. Taguchi, and S-I. Yamamoto, “Evaluation of Distributed In-organic Electroluminescence (EL) Devices with Comb Electrodes”, Proc. The 19th Int'l Display Workshops, PHp-21L (p.1747), (Kyoto, Japan, Dec, 2012). (Collaboration with Ryukoku Univ. and Image Tech Inc.)

40 Y. Osada, Y. Ishikawa, L. Lu, and Y. Uraoka, “Annealing Temperature Effect on Device Performances of Solution-Derived InZnO Thin-Film Transistors”, Abst. 9th Int'l Thin-Film Transistor Conf., 1pLP41 (p.75), (Tokyo, Japan, Mar, 2013).

41 J. P. Bermundo, Y. Ishikawa, H. Yamazaki, T. Nonaka, and Y. Uraoka, “Influence of Polysilsesquioxane-Based Passivation Layer on the Electrical Characteristics and Sta-bility of a-IGZO Thin Film Transistors”, Abst. 9th Int'l Thin-Film Transistor Conf., 1pLP47 (p.81), (Tokyo, Japan, Mar, 2013). (Collaboration with AZ Electronic Materials Manufacturing)

42 S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Fu-ruta, M. Horita, Y. Ishikawa, and Y. Uraoka, “Degradation Phenomena in Amorphous Oxide Thin-Film Transistor by Self-Heating Effect”, Abst. 9th Int'l Thin-Film Transistor Conf., 2pAO07 (p.25), (Tokyo, Japan, Mar, 2013). (Collaboration with Idemitsu Kosan Co,. Ltd. and Kochi Univ. Tech.)

43 S. Yoshinaga, Y. Ishikawa, S. Araki, and Y. Uraoka, “Light-Trapping Properties of Nanoimprinted-Textured Silicon Solar Cells with Inorganic Materials”, Abst. Int'l De-vice Phys. Young Scientist Symp. 2013, A-6 (p.14), (Nara, Japan, Mar, 2013).

44 S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Fu-ruta, M. Horita, Y. Ishikawa, and Y. Uraoka, “Degradation Phenomenon under Hot Carrier Stress in InSnZnO Thin Film Transistor”, Abst. Int'l Device Phys. Young Scien-tist Symp. 2013, A-7 (p.15), (Nara, Japan, Mar, 2013). (Collaboration with Idemitsu Kosan Co,. Ltd. and Kochi Univ. Tech.)

45 Y. Osada, Y. Ishikawa, L. Lu, and Y. Uraoka, “Low-Temperature Fabrication of Solu-tion-Process-Derived InZnO Thin-Film Transistors”, Abst. Int'l Device Phys. Young Scientist Symp. 2013, P-1 (p.16), (Nara, Japan, Mar, 2013).

46 C. He, R. Honda, H. Kamitake, M. Uenuma, Y. Ishikawa, I. Yamashita, and Y. Uraoka,

21

“Controlled Separation Distances of PEGylated Ferritin”, Abst. Int'l Device Phys. Young Scientist Symp. 2013, P-2 (p.17), (Nara, Japan, Mar, 2013). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST)

47 D. Hishitani, M. Horita, Y. Ishikawa, Y. Uraoka, H. Ikenoue, and Y. Watanabe, “Form-ing of SiO2 Film by Spin-On Glass and CO2 Laser Annealing on Polycrystalline Silicon Thin Film”, Abst. Int'l Device Phys. Young Scientist Symp. 2013, P-6 (p.21), (Nara, Ja-pan, Mar, 2013). (Collaboration with Kyushu Univ. and GIGAPHOTON)

48 K. Kado, T. Ban, M. Uenuma, Y. Ishikawa, and Y. Uraoka, “Evaluation of Oxide Nano-particles in Two-Dimensional Array by Conductive AFM”, Abst. Int'l Device Phys. Young Scientist Symp. 2013, P-7 (p.22), (Nara, Japan, Mar, 2013).

49 K. Nabesaka, Y. Ishikawa, T. Doe, N. Taguchi, Y. Hosokawa, and Y. Uraoka, “Atomiza-tion Process Utilizing Femtosecond Laser Irradiation for ZnS Phosphor”, Abst. Int'l De-vice Phys. Young Scientist Symp. 2013, P-8 (p.23), (Nara, Japan, Mar, 2013). (Collabo-ration with Image Tech Inc. and Green Bio Nano Lab., NAIST)

Domestic Conference and Symposium (All proceedings were written in Japanese.) 1 M. Uenuma, T. Ban, B. Zheng, I. Yamashita, and Y. Uraoka, Proc. IEICE Silicon Devices

and Materials, SDM2012-4 (p.15), (Okinawa Seinen Kaikan, Apr, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST) (“バイオナノプロセスを用いたフィラメント制御および抵抗変化メモリにおける効果-薄膜中の局所欠陥制御-”, 電子情報通信学会 シリコン材料・デバイス研究会)

2 L. Lu, T. Nishida, M. Echizen, Y. Ishikawa, K. Uchiyama, T. Shiosaki, and Y. Uraoka, “Thermally Stimulated Current Analysis of Defects in SrTa2O6 Thin-Film Capacitors”, Proc. 29th The Meeting on Ferroelectric Materials and Their Application, 25-T-24 (p.137), (Co-op Inn Kyoto, May, 2012). (Collaboration with Tsuruoka Nat'l Col. Tech. and Shibaura Inst. Tech.) (“熱刺激電流法による SrTa2O6薄膜キャパシタの欠陥分析”, 第 29 回強誘電体応用会議)

3 H. Kamitake, K. Ohara, M. Uenuma, B. Zheng, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Nanodot-Type Floating Gate Memory with High-Density Nanodot Array Formed Utilizing Listeria Dps”, Proc. IEICE Silicon Devices and Materials, SDM2012-46 (p.17), (Nagoya Univ., Jun, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST) (“リステア Dps を利用したナノドット型フローティングゲメモリの作製”, 電子情報通信学会 シリコ

ン材料・デバイス研究会) 4 E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, T. Okuyama, and H. Ikenoue, “Poly-

crystalline Silicon Thin Films on Various Plastic Substrates Crystallized by Underwater Laser Annealing”, Abst. JSAP, the 73rd Fall Meeting, 11a-PB2-1 (p.13-108), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (Collaboration with TOYOBO Co., Ltd. and Kyushu Univ.) (“水中レーザーアニールによるプラスチック基板上多結晶シリコン膜形成”, 第 73 回秋季応用物

理学関連連合講演会) 5 K. Yoshitsugu, M. Horita, Y. Ishikawa, and Y. Uraoka, “Reforming of Al2O3 Gate Die-

lectric Films Performed by High-Pressure Deuterium Oxide Annealing”, Abst. JSAP, the 73rd Fall Meeting, 12a-F4-5 (p.13-065), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (“高圧重水熱処理によるAl2O3ゲート誘電膜の改質”, 第 73回秋季応用物理学関連連合講演会)

6 Y. Mulyana, M. Horita, Y. Ishikawa, and Y. Uraoka, “Electrical Characteristics of UV/Ozone-Treated Graphene”, Abst. JSAP, the 73rd Fall Meeting, 12p-C2-11 (p.17-134), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (“UV/オゾン処理を施したグラフェンの電気伝導特性”, 第 73 回秋季応用物理学関連連合講演

22

会) 7 S. Araki, M. Horita, Y. Ishikawa, and Y. Uraoka, “Preparation of Nano-Patterns by

Quick Gel-Nanoimprint Process and Its Evaluation”, Abst. JSAP, the 73rd Fall Meeting, 12p-C3-9 (p.07-042), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (“短時間ゲル-ナノインプリント法によるナノパターン形成とその評価”, 第 73回秋季応用物理学関

連連合講演会) 8 T. Hashimoto, Y. Fukunishi, B. Zheng, Y. Uraoka, T. Hosoi, T. Shimura, and H.

Watanabe, “Fabrication and Evaluation of Photoelectronic Devices with Gold Nanopar-ticle Plasmon Antennas”, Abst. JSAP, the 73rd Fall Meeting, 12p-H4-15 (p.12-324), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (Collaboration with Osaka Univ.) (“金ナノ粒子プラズモンアンテナを利用した光電子デバイスの提案とその実証”, 第 73 回秋季応

用物理学関連連合講演会) 9 H. Kamitake, M. Uenuma, B. Zheng, Y. Ishikawa, I. Yamashita, and Y. Uraoka,

“Floating Gate Memory Fabricated Using Dps Protein”, Abst. JSAP, the 73rd Fall Meeting, 13a-F4-10 (p.13-174), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (Col-laboration with Mesoscopic Mater. Sci. Lab., NAIST) (“Dpsタンパクナノ粒子を利用したフローティングゲートメモリ”, 第73回秋季応用物理学関連連合

講演会) 10 N. Okamoto, K. Iwahori, Y. Uraoka, and I. Yamashita, “Synthesis of Tantalum Oxide

Nano Particle in Apoferritin”, Abst. JSAP, the 73rd Fall Meeting, 13a-H4-2 (p.12-328), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST) (“球殻状タンパク質フェリチンによるタンタルナノ粒子の作製”, 第 73 回秋季応用物理学関連連合

講演会) 11 T. Ban, N. Okamoto, M. Uenuma, B. Zheng, Y. Ishikawa, I. Yamashita, and Y. Uraoka,

“Characterization of TaOx Nanoparticles for Nanotechnology”, Abst. JSAP, the 73rd Fall Meeting, 13a-H4-3 (p.12-329), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (Col-laboration with Mesoscopic Mater. Sci. Lab., NAIST) (“微細化技術応用に向けたタンタル酸化物ナノ粒子の評価”, 第 73 回秋季応用物理学関連連合

講演会) 12 M. Uenuma, K. Kado, B. Zheng, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Selective

Placement of Nanoparticle on Metal Surface Using Electrostatic Interactions”, Abst. JSAP, the 73rd Fall Meeting, 13a-H4-10 (p.12-336), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST) (“局所的静電相互作用による金属薄膜上へのナノ粒子選択配置”, 第 73 回秋季応用物理学関連

連合講演会) 13 Y. Ueoka, F. Matsui, H. Yamazaki, S. Urakawa, M. Horita, Y. Ishikawa, H. Daimon, and

Y. Uraoka, “Analysis of IGZO/SiO2 Interface by Two-Dimensional Photoelectron Spec-troscopy”, Abst. JSAP, the 73rd Fall Meeting, 13a-H7-3 (p.21-026), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (Collaboration with Surf. & Mat. Sci. Lab., NAIST) (“二次元光電子分光による IGZO/SiO2界面の解析”, 第 73 回秋季応用物理学関連連合講演会)

14 H. Yamazaki, Y. Ueoka, Y. Ishikawa, M. Fujiwara, E. Takahashi, Y. Ando, and Y. Uraoka, “Effect of Elements Involved in Gate Insulators on Reliability of a-InGaZnO Thin Film Transistors”, Abst. JSAP, the 73rd Fall Meeting, 13a-H7-5 (p.21-028), (Ehime Univ. and Matsuyama Univ., Sep, 2012). (Collaboration with Nissin Electric Co., Ltd.) (“ゲート絶縁膜中元素がアモルファス InGaZnO 薄膜トランジスタの信頼性に与える影響”, 第 73回秋季応用物理学関連連合講演会)

15 Y. Osada, Y. Miura, L. Lu, T. Nishida, Y. Ishikawa, and Y. Uraoka, “Temperature De-

23

pendency of Chemical Solution Deposited InGaZnO Thin-Film Transistors”, Abst. Ma-terial Research Society, Japan, the 22nd Academic Symp., C-14-M, (Yokohama World Porters, Sep, 2012). (“化学溶液法を用いた InGaZnO 薄膜トランジスタの作製温度依存性”, 第 22回日本MRS 学術

シンポジウム) 16 Y. Osada, Y. Miura, L. Lu, T. Nishida, Y. Ishikawa, and Y. Uraoka, “Low Temperature

Fabrication of ZnO-Based Thin-Film Transistors Using Wet-Process”, Abst. 9th Thin Film Materials & Devices Meeting, 2P31 (p.111), (Nara Centennial Hall, Nov, 2012). (“ウェットプロセスによる ZnO 系酸化物薄膜トランジスタの低温作製”, 薄膜材料デバイス研究会

第 9 回研究集会) 17 K. Yamasaki, E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, and H. Ikenoue, “Poly-

crystalline Silicon Thin Films Crystallized by CO2 Laser Annealing”, Abst. 9th Thin Film Materials & Devices Meeting, 3O05 (p.158), (Nara Centennial Hall, Nov, 2012). (Collaboration with Kyushu Univ.) (“CO2 レーザーアニールによる多結晶シリコン薄膜の形成”, 薄膜材料デバイス研究会第 9 回研

究集会) 18 S. Saijo, Y. Ishikawa, B. Zheng, I. Yamashita, and Y. Uraoka, “Delivery Process of Gold

Nanoparticles Using Protein and Its Plasmon Characteristics”, Proc. IEICE Silicon De-vices and Materials, SDM2012-122 (p.41), (Kyoto Univ., Dec, 2012). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST) (“ポータープロテインによる金ナノ粒子配置プロセスとそのプラズモン特性”, 電子情報通信学会

シリコン材料・デバイス研究会) 19 S. Urakawa, Y. Ueoka, H. Yamazaki, Y. Ishikawa, and Y. Uraoka, “Theoretical Analysis

of Degradation Phenomena in a-Oxide TFT by Device Simulation”, Proc. IEICE Silicon Devices and Materials, SDM2012-125 (p.59), (Kyoto Univ., Dec, 2012). (“デバイスシミュレーションによるアモルファス酸化物半導体における劣化現象の理論的解析”, 電子情報通信学会 シリコン材料・デバイス研究会)

20 M. Uenuma, T. Ban, I. Yamashita, and Y. Uraoka, “Memoristive Nanodot Utilizing by Bio-Template”, Proc. The 18th Workshop on Gate Stack Technology and Physics, P30 (p.237), (New Wel City Yugawara, Jan, 2013). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST) (“バイオテンプレートを用いたメモリスティブナノドットの形成”, ゲートスタック研究会-材料・プロセ

ス・評価の物理- 第 18 回研究会) 21 K. Yoshitsugu, M. Horita, Y. Ishikawa, and Y. Uraoka, “Insulating Properties of Al2O3

for GaN MIS Gate Insulator by Plasma-Assisted Atomic Layer Deposition”, Abst. JSAP, the 60th Spring Meeting, 27p-G4-10, (Kanagawa Inst. of Tech., Mar, 2013). (“プラズマアシスト原子層堆積法による GaN MIS ゲート絶縁膜用 Al2O3の絶縁特性”, 第 60 回

春季応用物理学関連連合講演会) 22 K. Kado, T. Ban, M. Uenuma, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Evaluation of

Two-Dimensional Oxide Nanoparticles Array Using Conductive-AFM”, Abst. JSAP, the 60th Spring Meeting, 27p-F2-6, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST) (“Conductive-AFM による 2 次元配列酸化物ナノ粒子の評価”, 第 60 回春季応用物理学関連連

合講演会) 23 E.Kajimura, S-I. Yamamoto, E. Machida, and Y. Uraoka, Abst. JSAP, the 60th Spring

Meeting, 27a-PB1-2, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Ryukoku Univ.) (“MOD 法を用いて作製した強誘電体薄膜の圧電応答”, 第 60 回春季応用物理学関連連合講演

24

会) 24 K. Yamasaki, E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, and H. Ikenoue, “Dou-

ble-Layered Polycrystalline Silicon Thin Films Crystallized by CO2 Laser Annealing for Three-Dimensional Integrated Devices”, Abst. JSAP, the 60th Spring Meeting, 28p-G6-15, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Kyushu Univ.) (“三次元構造デバイス応用に向けた CO2 レーザーアニールによる積層多結晶シリコン薄膜の形成”, 第 60 回春季応用物理学関連連合講演会)

25 C. He, R. Honda, H. Kamitake, M. Uenuma, Y. Ishikawa, I. Yamashita, and Y. Uraoka, “Control Separation Distances of PEGylated Ferritin Molecules”, Abst. JSAP, the 60th Spring Meeting, 28p-G16-7, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Mesoscopic Mater. Sci. Lab., NAIST) (“PEG 修飾フェリチンの分散配置制御”, 第 60 回春季応用物理学関連連合講演会)

26 T. Itakura, Y. Uraoka, I. Yamashita, and S-I. Yamamoto, Abst. JSAP, the 60th Spring Meeting, 28a-B9-4, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Ryukoku Univ. and Mesoscopic Mater. Sci. Lab., NAIST) (“超機能性微粒子を用いたナノ領域の電気特性”, 第 60 回春季応用物理学関連連合講演会)

27 S. Togawa, S. Kumagai, I. Yamashita, Y. Uraoka, and M. Sasaki, Abst. JSAP, the 60th Spring Meeting, 28p-G16-15, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Toyota Technological Inst. and Mesoscopic Mater. Sci. Lab., NAIST) (“Ni フェリチンを用いた Si 薄膜振動子の高効率化”, 第 60 回春季応用物理学関連連合講演会)

28 Y. Ueoka, Y. Ishikawa, J. G. Um, J. P. Bermundo, H. Yamazaki, S. Urakawa, M. Horita, J. Jang, and Y. Uraoka, “Degradation Mechanism of IGZO TFT under Negative Bias Illumination Stress”, Abst. JSAP, the 60th Spring Meeting, 29p-G19-2, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Kyung Hee Univ.) (“IGZO TFT における光照射による劣化メカニズムの解析”, 第 60 回春季応用物理学関連連合

講演会) 29 H. Yamazaki, Y. Ishikawa, Y. Ueoka, M. Fujiwara, E. Takahashi, Y. Ando, and Y.

Uraoka, “Effect of Fluorine Contents in Gate Insulators on a-InGaZnO Thin Film Tran-sistors”, Abst. JSAP, the 60th Spring Meeting, 29p-G19-14, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Nissin Electric Co., Ltd.) (“アモルファス InGaZnO 薄膜トランジスタにおけるゲート絶縁膜中のフッ素が信頼性に与える影響”, 第 60 回春季応用物理学関連連合講演会)

30 S. Urakawa, M. Horita, Y. Ishikawa, and Y. Uraoka, “Thermal Simulation of Amorphous Oxide Thin Film Transistor”, Abst. JSAP, the 60th Spring Meeting, 29a-A3-7, (Kana-gawa Inst. of Tech., Mar, 2013). (“アモルファス酸化物薄膜トランジスタにおける発熱シミュレーション”, 第60回春季応用物理学関

連連合講演会) 31 S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Fu-

ruta, M. Horita, Y. Ishikawa, and Y. Uraoka, “Analysis of Degradation Phenomenon Caused by Self-Heating Effect in Amorphous Oxide Thin-Film Transistor”, Abst. JSAP, the 60th Spring Meeting, 29a-A3-6, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Idemitsu Kosan Co,. Ltd. and Kochi Univ. Tech.) (“酸化物薄膜トランジスタの自己発熱効果における熱劣化解析”, 第 60 回春季応用物理学関連

連合講演会) 32 Y. Osada, Y. Ishikawa, L. Lu, and Y. Uraoka, “Thickness Dependency of Device Per-

formances of Solution-Derived InZnO Thin-Film Transistors”, Abst. JSAP, the 60th Spring Meeting, 29p-G19-15, (Kanagawa Inst. of Tech., Mar, 2013). (“溶液プロセスで作製した InZnO 薄膜トランジスタにおけるチャネル層膜厚依存性”, 第 60 回春

25

季応用物理学関連連合講演会) 33 K. Nabesaka, Y. Ishikawa, T. Doe, N. Taguchi, Y. Hosokawa, and Y. Uraoka, “Atomiza-

tion Process Utilizing Femto-Sec Laser Irradiation for ZnS Phosphor”, Abst. JSAP, the 60th Spring Meeting, 29a-G5-2, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Image Tech Inc. and Green Bio Nano Lab., NAIST) (“超短パルスレーザーによる微粒化処理を行った ZnS 蛍光体の作製”, 第 60 回春季応用物理学

関連連合講演会) 34 J. P. Bermundo, Y. Ishikawa, H. Yamazaki, T. Nonaka, and Y. Uraoka, “New Pas-

sivation Material for a-IGZO thin film transistor ”, Abst. JSAP, the 60th Spring Meet-ing, 29p-F1-5, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with AZ Electronic Materials Manufacturing) (“New Passivation Material for a-IGZO thin film transistor ”, 第 60 回春季応用物理学関

連連合講演会) 35 W. Shichida, Y. Uraoka, N. Taguchi, and S-I. Yamamoto, Abst. JSAP, the 60th Spring

Meeting, 29a-G5-5, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Ryukoku Univ. and Image Tech Inc.) (“二層構造を有する分散型無機 EL の輝度特性”, 第 60 回春季応用物理学関連連合講演会)

36 T. Nonaka, Y. Uraoka, N. Taguchi, and S-I. Yamamoto, Abst. JSAP, the 60th Spring Meeting, 29a-G5-6, (Kanagawa Inst. of Tech., Mar, 2013). (Collaboration with Ryukoku Univ. and Image Tech Inc.) (“ストライプ構造型電極を用いた無機 EL の輝度特性”, 第 60 回春季応用物理学関連連合講演

会) 37 S. Yoshinaga, Y. Ishikawa, S. Araki, and Y. Uraoka, “Light-Trapping Simulation in

Nanoimprinted-Textured Si Solar Cell”, Abst. JSAP, the 60th Spring Meeting, 30p-A4-4, (Kanagawa Inst. of Tech., Mar, 2013). (“ナノインプリントによる表面テクスチャ構造を有した Si 太陽電池の光散乱シミュレーション”, 第60 回春季応用物理学関連連合講演会)

26

5. Collaborations 5.1 Projects CREST(Competitive Funding for Team-based Basic Research) – JST(Japan Science and

Technology) during 2009-2013 Research Area: Creation of Nanosystems with Novel Functions through Process Integration (プロセスインテグレーションによる次世代システムの創製)

Research Theme: Highly Functional Nano System Fabricated by Bio Frontier Process（生体超分子援用フロンティアプロセスによる高機能化ナノシステム） Collaboration: Osaka University, Kobe University, Toyota Technological Institute, The Cancer Institute of Japanese Foundation for Cancer Research

先端的研究支援事業 (from NAIST) Research Theme: ナノインプリント技術によるエネルギー低消費社会の創成 Collaboration: Nihhon Univ., Ryukoku Univ., Quantum Material Sci. Lab. (NAIST), Ultrafast Photonics Lab. (NAIST)

Funds in 2012

Seven projects which were accepted from JSPS funds were promoted.

Four projects received donated funds.

Thirteen projects were promoted with private companies.

Funds from NAIST in 2012 Nine projected which were accepted from NAIST internal competitive funds were

promoted. Two projects which were accepted in internal competitive founds for a fusional

area of three graduate schools in NAIST were promoted.

27

5.2 Joint research (2012/04 ~ 2013/03) Kyusyu University

Research Theme: Novel laser ablation technique to make LTPS film

Ajinomoto Co., Inc., from 2010 Research Theme: Bio-nano technology for dye-sensitized solar cell

AZ Electronic Materials Manufacturing Japan K.K.,

Research Theme: Fabrication and evaluation of printed SiO2 layer for TFT Idemitsu Kosan Co., Ltd. from 2009

Research Theme: Characterization of TFT utilized oxide semiconductor

Image Tech Inc. Research Theme: Development of flexible inorganic EL devices

Mitsubishi Gas Chemical Company Inc., Research Theme: Fabrication and evaluation of oxide semiconductor TFT

Mitsui Engineering & Shipbuilding Co., Ltd. Research Theme: Application of thin films deposited by ALD method

Nissan Chem. Ind., Ltd. from 2011 Research Theme: Evaluation of material reliability

Nisshin Electric Co., Ltd. from 2010 Research Theme: Evaluation of TFT reliability NLT Technologies, Ltd.,

Research Theme: Fabrication and evaluation of oxide semiconductor TFT

Panasonic Co. Research Theme: Fabrication of electronic devices through Bio-Nano-Process

PGS Home Co., Ltd., Research Theme: Fabrication and evaluation of dye-sensitized solar cell

Sumitomo Electric Industries, Ltd., from 2009

Research Theme: Fabrication and evaluation of TFT used oxide semiconductors Toyoda Gosei Co., Ltd.,

Research Theme: Fabrication and evaluation of thermoelectric transducer Tokyo Electron Ltd.,

Research Theme: Fabrication and evaluation of printed device 5.3 Internship / Lab Stay (2012/04 ~2013/03) Two students participated in a lab stay program.

Mr. Chaiyanan Kulchaisit from Kasetsart Univ. (Thailand). (during May 26 ~ June 29) Mr. Sudo from Wakayama Nat’l College of Tech. (during Aug. 20 ~ 30) Mr. Mukose from Fukui Nat’l College of Tech. (during Aug. 20 ~ Sept. 14) Mr. Dominik Gölden from RheinMain Univ.(Germany) (during Sept. 19 ~ Sept. 29)

28

6. Honor of Awards, and News Releases (2012/04 ~ 2013/04) 6.1 Awards

Emi MACHIDA, The Nineteenth International Display Workshops in conjunction with Asia Display (IDW/AD) 2012, Best Paper Award “Super Low-Temperature Formation of Polycrystalline Silicon Films on Plastic Substrates by Underwater Laser Annealing” (2013/2/15)

Haruka YAMAZAKI, The Nineteenth International Display Workshops in conjunc-tion with Asia Display (IDW/AD) 2012, Best Paper Award “The Influence of New SiNx Gate Insulator in a-InGaZnO Thin Film Transistors” (2013/2/15)

6.2 News Releases Research of dye-sensitized solar cell utilizing bio-nano-technology promoted by Assoc. Prof. Ishikawa was introduced in Metamorphosis vol. 16 which is a public relation magazine of Murata Manufacturing Co. Ltd.

29

7. Excursion & Events

Excursion (Aug. 4 ~ 5) Master course first-year stu-

dents plan an excursion as a first task in the laboratory’s activity. This year’s focus was the pottery workshop, and enjoying a hot spring at Kinosaki. A good bal-ance between concentration and relaxation encourages our crea-tivity for the next challenges in our research!

Sports & Events

This Institute usually organizes several sports events, such as softball, a relay-race with cos-play, and table tennis. Our students have actively joined every event, making their own teams. Internal events in our lab were also frequently held.

30

8. Dissertation 8.1 Doctor course (2012)

川村 悠実 (Yumi KAWAMURA)

原子層堆積法による高機能酸化物半導体を用いた薄膜トラン

ジスタの低温形成とその評価

町田 絵美 (Emi MACHIDA)

Fabrication of High-Performance Polycrystalline Silicon Thin Film Transistors at Super Low-Temperature and Its New Electrical Characterization Method (高性能多結晶シリコン薄膜トランジスタの超低温作製と新規

手法による電子物性評価)

呂 莉 (Li LU)

Oxide Semiconductor Thin Film Transistors with High-k Dielectric Material Fabricated by Solution Process （溶液プロセスによる高誘電率材料を用いた酸化物系薄膜ト

ランジスタの作製） 平松 雅人 (Masato HIRAMATSU)

高性能薄膜トランジスタの実用化をめざした大粒径シリコン

薄膜作製手法の研究 Every thesis was written in Japanese except Machida’s and Lu’s paper.

8.2 Master Course (2012)

上武 央季 (Hiroki KAMITAKE)

超小型球殻状タンパクを利用したナノドット型フローティン

グゲートメモリの作製および評価 番 貴彦 (Takahiko BAN)

バイオテンプレートによる酸化タンタルナノ粒子形成・配置と

超微細抵抗変化メモリ応用に関する研究 山﨑 はるか (Haruka YAMAZAKI)

ゲート窒化絶縁膜を用いたアモルファス InGaZnO 薄膜トラン

ジスタの高信頼性化に関する研究 吉嗣 晃治 (Koji YOSHITSUGU)

GaN 電界効果トランジスタのゲート絶縁膜応用に向けた原子

層堆積法による Al2O3膜の形成と評価

Yana MULYANA Electrical characteristics of UV/ozone-treated graphene （UV/オゾン処理を施したグラフェンの電気伝導特性） Every thesis was written in Japanese except Mulyana’s paper.

31

9. Carriers After Graduation

In the year 2012, 9 students (4 from doctor course, and 5 from master course) graduated from our laboratory.

Their working places after graduation are as follows: Air Liquid Laboratories, K.K., Ja-

pan, Hitachi Ltd., Panasonic Co., and our doctor course (5 students). In addition, our alumni are working in Denso Co., Iwatani Co., Inc., Hitachi Zosen Co.,

Mitsui Eng. & Shipbuilding Co., Ltd., Mitsubishi Elec. Co., OG. Co., Omron Co., Panasonic Co., Rohm Co., Ltd., Sandisk Co., Sekisui Chemical Co. Ltd., Shikoku Electric Power Co., Sumitomo Electric Industries Ltd., Tokyo Electron AT Limited, Toyoda Gosei Co., Ltd., Toyota Motor Co., ULVAC Inc., and Yokogawa Electric Co.

32

10. Scientific Instruments and Methods for Analysis 10.1 Material Formation

Material Formation Method Application Contact

Insulative films SiO2, SiNx

[SiO2] RF Magnetron sputter-ing , Thermal oxidation furnace (dry, pyrogenic), CVD from TEOS [SiNx] P-CVD with SiH4, NH3

Passivation for solar cells, TFTs Gate-insulator for TFTs

Horita Ishikawa

Amorphous Si RF Magnetron sputtering Electron beam evaporator P-CVD with SiH4

Low T poly-Si Horita Ishikawa

Polycrystalline Si

Laser crystallization (green laser: 532nm)

Low T poly-Si Horita

Oxide semicon-ductors (InGaZnO, ZnO, In2O3)

RF magnetron sputtering Plasma-assisted atomic layer deposition system (RF) Spin-coating (sol-gel type)

Transparent TFTs Ishikawa Horita

Metal (Ti, Mo, Pt, Ni, etc.)

Electron beam evaporator, Resistive heating evaporator, RF magnetron sputtering

Electrode for elec-tronic devices

Horita

Transparent conductive films (ITO)

RF magnetron sputtering (3 elements system)

Electrode of solar cell, Transparent TFTs

Horita

Nano particles of semiconductors (ZnS, FeS2 etc.)

Electro spray coating EL device, photo - detector, solar cell

Ishikawa

10.2 Simulation Tools

Name Functions Application Contact ATLAS, ATHENA (SILVACO Inc.)

Device simulation Process simulation

Electronic devices (TFT, solar cell, etc.)

Ishikawa

UTMOST IV (SILVACO Inc.)

Parameter extraction of the devices

Transistors Ishikawa

FullWAVE BandSOLVE DiffractMOD

(Rsoft design)

Electro-magnetically field simulation

Solar cells, Optical switch, plasmon ef-fect

Ishikawa

33

10.3 Process Methods

Method Material Application Contact Photolithography system *

Semiconductor materials, metal films

TFTs, device patterning Horita

Electron beam lithography (ELIONICS, LS-7500)*

Semiconductor materials, glass, ceramics

TFTs, device pattering, mold for NIL

Horita

Nanoimprint lithography (UV)

Plastic resin (PMMA, PDMS etc.), ZnO, SOG

Photonic crystal, AR layer for solar cells

Ishikawa

Inductive-coupled plasma reactive ion etching (SAMCO RIE-101P)*

Semiconductor materials TFTs, device patterning Horita

Anneal furnace (Thermal, RTA) *

Semiconductor materials, Ferroelectric ceramics, EL materials

Fe-RAM, EL devices, TFTs

Horita

Sintering oven (heating mantle)

Semiconductor materials Dye-sensitized solar cells

Ishikawa

Dry oven Semiconductor materials Dye-sensitized solar cells

Ishikawa

Screen printing All-manual Semi-auto (NEWLONG DP320)

Inorganic EL (ZnS) TiO2 paste

EL device Dye-sensitized solar cells

Horita

Ultraviolet ozone generator (SAMCO UV-1)

Semiconductor materials Bio-nano process ZnO TFTs with sol-gel process

Uenuma

High pressure va-por anneal

Semiconductor materials (InGaZnO, poly-Si, etc.)

TFTs Ishikawa Horita

Glove box (no-vacuum)

Printed materials TFTs, sensors, solar cells

Ishikawa

Ink-jet printing machine (SIJ-ST050-GB)*

Ag paste or functionalized ink for making semiconduc-tors, insulators, or the other films

TFTs, sensors, func-tionalized films

Ishikawa

* : common facilities of the institute Almost all equipment for material formation and the fabrication process systems are installed in our own clean-room (class 10,000, area: 200m2) and the clean-rooms of the institute (large clean-room: class 1,000, area: 230m2, yellow-room: class 100, area: 20m2, clean-room for bio-nano process: class 1,000, area: 100m2).

34

10.4 Structural Analyses

Method Material Application Contact Photoelectron spec-troscopy (XPS) (SHIMADZU, KRATOS AXIS-165)*

Semiconductor sur-faces, transparent semiconductors (ZnO, InGaZnO etc.)

Chemical bonding of materials

Horita

Secondary ion mass spectroscopy (SIMS) (ULVAC-PHI, DEPT-1010)*

Compositional analysis of thin films

Chemical composition, depth profiling

Horita

Atomic force micro-scope (AFM, -conductive, -Kelvin-probe) (SHIMADZU, SPM9600)

Low T poly-Si, trans-parent semiconductors (ZnO, IGZO, etc.)

Surface roughness, electrical profile, poten-tial profile, structure

Horita

Transparent electronic microcopy (300kV/200kV) (JEOL, JEM-3100FEF)* (JEOL, JEM-2200FS)*

Structural analysis of thin films and nano-dot devices

High resolution structural analysis

Horita Uenuma

Field emission scan-ning electronic mi-croscopy (FE-SEM) Energy dispersive X-ray analysis (JEOL, JSM-7400F, JSM-6301F, JED-2001FN)*

Thin film poly-Si Ferroelectric ceramics EL material (ZnS), nano particle

Structure, chemical composition

Horita Uenuma

X-ray diffractmetry (RIGAKU, RINT-TTRⅢ/NM, R-AXIS, DS3C)* (PHILIPS X’Pert MRD)

Thin film poly-Si Ferroelectric ceramics EL material (ZnS)

Phase analysis Horita

Nomarski microscope (NIKON Eclipse LV 100D)

Semiconductor films, metal films, devices

Surface morphology Horita

Laser Microscope (KEYENSE VK-9510)*

Semiconductor films, metal films, devices

Surface morphology Horita

Stylus profiler (KLA-Tencor, AS-500)*

Semiconductor films, metal film, devices

Film thickness, surface roughness

Horita

Film thickness meas. (FILMETRICS F20-UV)*

Semiconductor films, metal films, devices

Thin film thickness Horita

* : common facilities of the institute

35

10.5 Optical Analyses

Method Material Application Contact Photoluminescence (280-800nm) (JASCO, FP-6300)

EL materials (ZnS) Nano-dot materials

Band structure, Size of nano-particles

Horita

FT-IR spectroscopy (JASCO FT/IR-6100FV-ST) (ATR Pro 650G)

Thin film materials Surface bonding structure

Ishikawa

Spectroscopic ellip-sometry (HORIBA UVISEL ER)*

Thin film materials (SiO2, ZnO, poly-Si etc.)

Surface bonding structure

Ishikawa

Raman spectroscopy (JASCO, NRS-2100)*

Thin film materials Crystallinity Horita

Thermacogenesis ob-servation scope (Infra Scope II)

Thin film materials Joule heating effect Horita

* : common facilities of the institute 10.6 Analysis of Electrical Properties

* : common facilities of the institute

Method Material Application Contact Emission microscope (Hamamatsu, PHEMOS 200)

Thin film poly-Si Oxide semiconductor

Analysis of TFT’s oper-ation characteristics

Horita

Electronic characteri-zation by semicon-ductor analyzer (at room T, high T(~ 400K), low T(~ 10K)) (HP-4156B, Agilent-4156C, B1500A)

Thin film poly-Si, Oxide semiconductor, nano-dot devices

Electronic properties of TFTs, sensors, solar cells, ferroelectric ce-ramics

Uenuma Horita

C-V characteristics (C-V meter) (HP-4280A. 4284A, 41501B)

Thin film poly-Si C-V properties of TFTs, sensors, solar cells,

Uenuma Horita

Hall-effect measure-ment system (low T (10K) ~

high T (400K)) (Keithlay,RESITEST-8300)*

Thin film poly-Si Oxide semiconductors

Carrier mobility, carrier density

Horita

36

11. List of Members (as of 2013/04)

Name Title M:Ms. course D:Dr. course

Tel (+81-743-72…)

E-Mail (…@ms. naist.jp)

Work contents

Staffs

Yukiharu URAOKA Ph.D. Eng. 6060 uraoka Organizer - Professor, SOP, TFT, Memory, etc.

Yasuaki ISHIKAWA Ph.D. Eng. 6061 yishikawa Associate Professor, Flexible / Printed devices (TFT, solar cells, sensors)

Masahiro HORITA Ph.D. Eng. 6063 horita Assistant Professor, TFT, EL device fabrication toward flexible display

Mutsunori UENUMA Ph.D .Eng. 6063 uenuma Assistant Professor, Memory, thermoelectric de-vices utilizing BNP

Bin ZHENG Ph.D. 6074 zhengbin Assistant Professor, DNA operation, BNP Career change to private company

Yukiko MORITA - 6069 morita Secretary (2012/10 ~)

Fuyuko TAKAO - N/A N/A Secretary ( ~ 2012/10)

Students

Chao HE

Ms.-2nd

6064 h-chao Thermoelectric transducer utilized BNP

Daisuke HISHITANI

Ms.-2nd

6064 h-daisuke Low T SiO2 film utilizing CO2 Laser Annealing

Emi MACHIDA

Ph.D. Eng. (graduate)

N/A N/A Low T poly Si TFTs using underwater laser anneal-ing

Haruka YAMAZAKI Ms. Eng. (D-1st)

6064 y-haruka Development of highly reliable IGZO TFTs

Hiroki KAMITAKE Ms. Eng. (D-1st)

6064 k-hiroki High-density nanodot-type floating memory by BNP

Juan Paolo Soria BERMUNDO

Ms. Eng. (D-1st, autumn admission)

6064 b-soria Solution-derived pas-sivation for oxide semi-conductor TFTs

Hiroyuki NAGAO Ms.-1st

6064 nagao.hiro yuki.my2

BNP for electronic devices

37

Name Title M:Ms. course D:Dr. course

Tel (+81-743-72…)

E-Mail (…@ms. naist.jp)

Work contents

Kahori KISE M-1st

6064 kise.kahori.kd0

Interface analysis of oxide semiconductor TFTs.

Keisuke KADO M-2nd 6064 k-keisuke One dot ReRAM using BNP

Koji YAMASAKI Ms. Eng. (D-3rd)

6064 y-koji Fabrication of 3D - low T poly-Si

Koji YOSHITSUGU Ms. Eng. (D-1st)

6064 yo-koji Al2O3 passivation by ALD method for HEMT

Kyohei NABESAKA M-2nd 6064 N-kyohei ZnS EL device Femto-sec Laser ablation

Kulchaisit CHAIYANAN

M-1st 6064 chaiyana- ku

Solution-derived pas-sivation for oxide semi-conductor TFTs

Li LU Ph.D. Eng. (graduate)

N/A N/A (BaSr)Ta2O6/ZnO films with sol-gel method

Satoshi SAIJO Ms. Eng. (D-3rd)

6064 s-satoshi Plasmonic solar cell uti-lizing BNP technology

Satoshi URAKAWA M-2nd

6064 u-satoshi Role of metal element in various oxide semicon-ductor

Satoru SUENAGA M-1st 6064 suenaga. satoru.sl7

Plasmon effect on thin-film solar cells

Seiya YOSHINAGA M-2nd 6064 y-seiya Nanoimprinted texturing for solar cell

Shinji ARAKI M-2nd

6064 a-shinji Nanostructure fabrication by NIL process

Syunsuke TAKENOUCHI

M-1st 6064 takenou chi.syunsuke.tm2

BNP for functional devic-es

Takahiko BAN Ms. Eng. (D-1st)

6064 b-takahiko Combination of Junction less transistor and BNP

Takahiro DOE Ms. Eng. (D-2nd)

6064 d-takahiro ZnS and ZnO nano parti-cles and their devices

Tatsuki HONDA M-1st 6064 honda. tatsuki.hl1

Laser doping by CO2 la-ser for c-Si solar cell

38

Name Title M:Ms. course D:Dr. course

Tel (+81-743-72…)

E-Mail (…@ms. naist.jp)

Work contents

Tomoaki UMEHARA M-1st 6064 umehara. tomoaki.uf5

Insulation layer for GaN TFT

Toru TAKAO M-1st 6064 takao.toru. tl7

single-crystal Ge TFT

Yana MULYANA Ms. Eng. (D-1st)

6064 y-mulyana Graphen TFT for bio-sensors

Yoshihiro UEOKA Ms. Eng. (D-3rd)

6064 u-yoshihiro Electrical analysis for IGZO TFTs and their functionalization

Yumi KAWAMURA Ph.D. Eng. (graduate)

N/A N/A Improvement of ZnO TFTs deposited by ALD

Yukihiro OSADA M-2nd

6064 o-yukihiro All-printed TFT

Yunjian JIANG M-1st

6064 j-yunjian Back-contact-type solar cell by print process

Doctor course students from industry Masato HIRAMATSU (Toshiba Mobile Display Co., LTD.)

Ph.D. Eng. (graduate)

- - Large grain Poly-Si pro-cess

Masahiro MITANI (Sharp Co.)

Ms.Eng. (D-3rd)

- - Carrier collection in large grain poly-Si TFT

Shigekazu TOMAI (Idemitsu Kosan Co., Ltd.)

Ms. Eng. (D-1st, autumn admission

- High mobility oxide sem-iconductor TFT

Visiting Researchers (during 04/2012-03/2013) Shuichi MAYUMI ( PGS Home Co., Ltd.,)

Ph.D. Eng. - - Dye-sensitized solar cell

Yutaka IKEGUCHI ( PGS Home Co., Ltd.,)

- - - Dye-sensitized solar cell

Ippei INOUE (Ajinomoto Co. Inc.)

Ph.D. - - BNP Engineering

Nozomu HATTORI (Mitsui Eng. Ship. Co. LTD.)

Ph.D. Phys. - - Fabrication method of oxide semiconductors

Eiji TAKAHASHI (Nisshin Electric Co., Ltd.)

Ph.D. Eng. - - TFT Fabrication

39

12. Site Plan

Address: 8916-5 Takayama-cho, Ikoma, Nara, 630-0192, Japan TEL/FAX: +81-743-72-6069 (secretary)

Access information: http://mswebs.naist.jp/english/access/index.html

IDS (Information Device

Science) Lab @ 5th Floor