http://www.ctcorea.co.kr

Vacuum & Film Application Leader

2011. 2011. 0909

1 Introduction1. Values & Philosophy2. Company Overview p y3. Company History4 O i ti4. Organization

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1. Values & Philosophy

Future leading with Innovation & Creation

Technical Innovation

C ti C t

Manpower Training

Creative Management

Customer Satisfaction

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1-1. Vision/MissionMax. value creation through localization of equipment, material & componentImprove human life quality & contribute global environment with concept changed item

Core technology holder of PVD system & mass manufacturing process System

Manufacturing TechnologyC titigAbility Competitiveness

SYSTEMCompetitive edgeby low manufacturing

costMinimum

developmenti d

SYSTEM Process technology!Design technology!

fcost period Manufacturing technology! Material origin technology!

Material & component technology! R&BD leader!M f t i

Product excellence &

Original Technology & patent

t

R&BD leader!ManufacturingCompetitiveness

excellence &infra secure guarantee

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2. Company Overview Established 2008. 2

Head Office/Factory

Gyeongbuk Gyeongsan Dagadae Business Incubator 103Gyeongbuk Gyeongsan-si Jinryang-eub Asa-ri #407

i lCapital 0.2M USDCEO JAE SUK HONG

Employees 201. System Business :

Main Business Sputtering : Heat-sink, Solar cell, Roll coater for film coating2. Material Business: Film Coating3. R & D : Flexible Application, PVD Source

Technology Leading

High-Tech, Environment

* High value technology adopted IT Overcome problem by high-quality type Reliability & high-quality manufacturing* Bulk & thin film type Solar Cell PVD SystemEnvironment,

Energy ,Green &

New growth business

5G~8.5G & TCO, Al, Ag, Mo Etc

* PCB high-quality trend(High Power & LED) Cu film system by PVD business Metal stress control

Plant 1. Present: 3,306m(plottage), 992m(floorage)2 N 4 298 ( l ) 3 367 (fl ) (G i i 4th l )

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2. New: 4,298m(plottage), 3,367m(floorage) (Gumi-si 4th complex)

3. Company History

2008

Established : 2008. 2 Venture company certificate Government project from SMBA approved & established R & D center Heat Sink Sputter development & supply Sales:0.1M USD

Plant in Gyeongsan completed - 3,306m(plottage), 992m(floorage) Leading business promotion in Daegyeong area project approved Roll to Roll Sputter development & supply2009 Roll to Roll Sputter development & supply Sales:0.2M USD

2009

2010 Established: Cathode expert development R & D center (330m) New plant area select (4,298m(plottage) in Gumi-si)

Paid-in capital : 0.2M USD

2010 New plant area select (4,298m (plottage) in Gumi si) Sputter development & supply for G5 Solar Sales:4.5M USD

Paid in capital : 0.2M USD INNOBIZ certificate Sputter development & supply for G3.5 Solar New plant completed (at the end of May) Launching material business

2011 Branch in China expecting: YANGZHOU Sales:10M USD

2012 Plant in China completed: 16,528m(plottage) , 6611 m(floorage)(YANGZHOU)

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2012 Sales:20M USD

4. Organization

CustomerCustomerItem Development

TeamSales TeamManufacturing/Control TeamDesign Team

Process Development Process Development Team

Material BusinessSystem Business

R & D Center(Technical Advisor)

Management/Planning

CEO

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BUSINESS INTRODUCTION2 BUSINESS INTRODUCTION21 Business Fields1. Business Fields2. System Business3. Material Business4. R & D

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1. Business Fields

System BusinessGlobal Product

Sputtering : Heat-sinkSolar cell, FPD, IndustryRoll coater for film coating

Material Business

R2R Desmear

Material BusinessNo. 1No. 1 Film Coating : FCCL

ITO Film

R & D Passivation Film

Flexible Application PVD Source

Cylindrical Magnetron Sputtering

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Facing Target SputteringRectangular Magnetron Sputtering

2-1. Sputter Equipments Item : Advanced Sputter(High Speed) for Heat-sink Application Description : ~ G6 PCB Application

(Illumination LED/Heat-sink/High Power Chip) Features

Wide range of coating materials High Speed Deposition Rate High Utilization for Coating Material High coating density High degree of uniformity High degree of uniformity Vertical type Simple process, easy to control

- Thickness & stress Module Type

-Size change available

li iApplication : Max. Cu 300um (both sides)Al, Cu, Metallization ProcessSemiconductor, Optical coating etc.

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2-2. Sputter Equipments Item : Advanced Sputter for Solar Cell & LCD Application Description : G5~G8.5 Al Solar Cell Application Features

Wide range of coating materials Excellent adhesion due to high energy High coating density High degree of uniformity High Speed Deposition Rate Horizontal type (In Line Or Cluster Type) Simple process easy to control Simple process, easy to control

- Thickness & stress Compact Structure

-Module Type(Size change available)yp g No Tray (Carrier)

- Only Glass Application

Al Metallization ProcessDisplay, Semiconductor,Optical coating, etc.

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2-3. Sputter Equipments Item : Advanced Sputter for Solar and LCD Applications Description : G5~G8.5 Oxide Process Application) Features

Wide range of coating materials Excellent adhesion due to high energy High degree of Heating Uniformity High degree of uniformity High Speed Deposition Rate Horizontal type (In Line or Cluster Type) Non - Contact Transfer Unit Type Module Type

Si h il bl- Size change available

ApplicationITO ARAS(SIO2 TiO2(Nb2O5) Metallization ProcessITO, ARAS(SIO2,TiO2(Nb2O5) Metallization ProcessDisplay, Semiconductor, Optical coating, etc.

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2-4. Sputter Equipments Item : Roll To Roll Sputter System Description : Film Size (Width 300 ~ 1,320mm) Features

Wide range of Film Thickness Excellent adhesion due to high energy High coating density High degree of uniformity High degree of Heating Uniformity

(High-Precision Control) Simple process, easy to control

- Thickness & stress S b t t Substrate

PET, PI, Al Foil etc Flexible Substrate Application

ITO Film for Touch Panel FCCLITO Film for Touch Panel, FCCL, Optical Film , Li Ion Battery,PDP EMI Filter, Auto & IndustryNano Silver Coating for

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Nano Silver Coating for Bio Products etc.

2-5. Sputter Equipments Item : Advanced Sputter for LCD/OLED Application Description : G5.5 (OLED Application) Features

Low Process Temp (Under 80 ) Low Damage for Organic Material Low Roughness for Coating Material High degree of uniformity Non-Contact Transfer Unit Type Easy M/T Type

- Sliding Type Door Unit- Auto Up Down Cathode Unit

V ti l t Vertical type Simple process, easy to control

- Thickness & stress Module Type Module Type

-Size change available Application

AZO IZO ITO Al Metallization Process

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AZO, IZO, ITO, Al Metallization ProcessDisplay, Semiconductor, Optical coating etc.

3-1. ITO Film : Concept for IT 1. Polymer Sub. Treatment Process1. Polymer Sub. Treatment Process GuaranteeGuarantee

Quality improve by surface change of under coating layer- Ion Source Test- Ion Source Test- Glow Discharge Test- Magnet Cathode Type Test

-> Pre-Data Base guaranteeT h P lT h P l

2. Buffer Layer Process Guarantee2. Buffer Layer Process Guarantee

Touch Panel Touch Panel ProcessProcess

Buffer layer guarantee through SiO2 reactive process testTwin Mac Cathode use

- MF/Pulse Power Test - OES TEST-> High-quality, High Depo. Rate Process guaranteeg qua ty, g epo. ate ocess gua a tee

3. TCO Process Guarantee3. TCO Process GuaranteeTransparent layer process guarantee by ITO Process Test

- Low-temp. ITO low resistance process test- High-quality/High endurance ITO film process test

-> Low resistance/High-quality/High endurance ITO film process guarantee

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3-2. High quality ITO Film for IT

1.ITO : 1602.SiOx : 969

1.ITO : 1602.SiOx : 844

O (JAPAN) CTC

3.H/C : 192193.H/C : 19477

O(ITO/SiO2/U.C/PET/H.C)

SAMPLE(ITO/SiO2/U.C/PET/H.C)

SiO2(thickness) 969 1000SiO2(thickness) 969 1000

transmittance 88% 88.2%

Surface resistance 443(/) 450(/)

resistivity 7.00-4cm 7.00-4cmresistivity 7.00 cm 7.00 cm

ITO(thickness) 160 160

XRD crystalline structure crystalline structure

Bending - -g

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4.1. Flexible Application

High Quality Flexible ApplicationHigh Quality Flexible ApplicationTransparency: > 85% (@550nm) Low resistivity: low 10-4 -cm

Flexibility: bendablesubstrate 3 Main IssuesSubstrate: PETPET, PC, PES, PEN

Optical & Electrical properties3 Main IssuesPEN

Good adhesion: Sub.-Barrier-ITOHigh density & low film defectsFilm stress control Barrier

p ope t es

Single layer: SiOx SiNx SiOxNy Al2O3Film stress control Barrier properties WVTR : 10-6 g/m2/day

OTR : 10-5 cc/m2/day

Single layer: SiOx, SiNx, SiOxNy, Al2O3

Multi-layer: NONON

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4.2. PVD Source

Merit : Merit : Hi h ffi i & l T

Merit :

Cylindrical Magnetron Sputtering Facing Target Sputtering Rectangular Magnetron Sputtering

High efficiency of target(Max. 80%)

Long running time of target

High efficiency & low Temp. process of target use

Anti-film damage by Ion impact Low Plasma impedance/Low pressure

process

Large size sputtering source (~ 4m) High quality coating film generating Easy-mix of Oxide film, Nitride film

High stabilityp

High speed Depo.

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21C GREEN & FPD

Thank You!Thank You!

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Gyeongbuk Gyeongsan-si Jinryang-eub Asa-ri #407Tel : 053-850-3777 Fax : 053-852-3777 http://www.ctcorea.co.kr