datasheet ikq75n120ch3 - infineon technologies
TRANSCRIPT
Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.3www.infineon.com 2019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fastrecoveryfullcurrentratedanti-parallelEmitterControlleddiodeFeatures:
HighspeedH3technologyoffers:•Highefficiencyinhardswitchingandresonanttopologies•10µsecshortcircuitwithstandtimeatTvj=175°C•EasyparallelingcapabilityduetopositivetemperaturecoefficientinVCEsat•LowEMI•LowGateChargeQG•Verysoft,fastrecoveryfullcurrentanti-paralleldiode•MaximumjunctiontemperatureTvjmax=175°C•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/
Applications:
•IndustrialUPS•Charger•EnergyStorage•Three-levelSolarStringInverter•Welding
ProductValidation:
QualifiedforindustrialapplicationsaccordingtotherelevanttestsofJEDEC47/20/22
G
C
E
KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKQ75N120CH3 1200V 75A 2V 175°C K75MCH3 PG-TO247-3-46
Datasheet 2 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet 3 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 1200 V
DCcollectorcurrent,limitedbyTvjmaxTc=25°CTc=134°C
IC 150.075.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 300.0 A
Turn off safe operating areaVCE≤1200V,Tvj≤175°C,tp=1µs - 300.0 A
Diodeforwardcurrent,limitedbyTvjmaxTc=25°CTc=100°C
IF 150.075.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 300.0 A
Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE
±20±30 V
Short circuit withstand timeVGE=15.0V,VCC≤600VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=175°C
tSC
10
µs
PowerdissipationTc=25°CPowerdissipationTc=134°C Ptot
938.0256.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
ThermalResistance
Valuemin. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,1)
junction - case Rth(j-c) - - 0.16 K/W
Diode thermal resistance,1)
junction - case Rth(j-c) - - 0.28 K/W
Thermal resistancejunction - ambient Rth(j-a) - - 40 K/W
1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
Datasheet 4 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=75.0ATvj=25°CTvj=175°C
--
2.002.50
2.35-
V
Diode forward voltage VF
VGE=0V,IF=75.0ATvj=25°CTvj=175°C
--
1.901.85
2.30-
V
Gate-emitter threshold voltage VGE(th) IC=2.60mA,VCE=VGE 5.1 5.8 6.5 V
Zero gate voltage collector current ICESVCE=1200V,VGE=0VTvj=25°CTvj=175°C
--
-5000
450-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=75.0A - 26.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 4856 -
Output capacitance Coes - 505 -
Reverse transfer capacitance Cres - 290 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=960V,IC=75.0A,VGE=15V - 370.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 34 - ns
Rise time tr - 47 - ns
Turn-off delay time td(off) - 282 - ns
Fall time tf - 29 - ns
Turn-on energy Eon - 6.40 - mJ
Turn-off energy Eoff - 2.80 - mJ
Total switching energy Ets - 9.20 - mJ
Tvj=25°C,VCC=600V,IC=75.0A,VGE=0.0/15.0V,RG(on)=6.0Ω,RG(off)=6.0Ω,Lσ=90nH,Cσ=67pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
Datasheet 5 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 370 - ns
Diode reverse recovery charge Qrr - 5.10 - µC
Diode peak reverse recovery current Irrm - 25.0 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -170 - A/µs
Tvj=25°C,VR=600V,IF=75.0A,diF/dt=600A/µs
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°CTurn-on delay time td(on) - 33 - ns
Rise time tr - 48 - ns
Turn-off delay time td(off) - 388 - ns
Fall time tf - 66 - ns
Turn-on energy Eon - 10.20 - mJ
Turn-off energy Eoff - 6.00 - mJ
Total switching energy Ets - 16.20 - mJ
Tvj=175°C,VCC=600V,IC=75.0A,VGE=0.0/15.0V,RG(on)=6.0Ω,RG(off)=6.0Ω,Lσ=90nH,Cσ=67pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr - 640 - ns
Diode reverse recovery charge Qrr - 12.30 - µC
Diode peak reverse recovery current Irrm - 34.0 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -100 - A/µs
Tvj=175°C,VR=600V,IF=75.0A,diF/dt=600A/µs
Datasheet 6 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
1 10 100 10000.1
1
10
100
not for linear use
Figure 2. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot ,PO
WER
DISSIPA
TION[W
]
25 50 75 100 125 150 1750
100
200
300
400
500
600
700
800
900
1000
Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,C
OLLEC
TORCURREN
T[A]
25 50 75 100 125 150 1750
20
40
60
80
100
120
140
160
Figure 4. Typicaloutputcharacteristic(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
0 1 2 3 4 5 60
50
100
150
200
250
300VGE=20V
17V
15V
13V
11V
9V
7V
5V
Datasheet 7 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
Figure 5. Typicaloutputcharacteristic(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
0 1 2 3 4 5 60
50
100
150
200
250
300VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaltransfercharacteristic(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
2 4 6 8 10 12 14 16 180
50
100
150
200
250
300Tvj = 25°CTvj = 175°C
Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,C
OLLEC
TOR-EMITTE
RSAT
URAT
ION[V
]
25 50 75 100 125 150 1750.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0IC = 38AIC = 75AIC = 150A
Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=175°C,VCE=600V,VGE=0/15V,RG=6Ω,DynamictestcircuitinFigure E)
IC,COLLECTORCURRENT[A]
t,SW
ITCHINGTIMES
[ns]
0 30 60 90 120 1501
10
100
1000
td(off)
tftd(on)
tr
Datasheet 8 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
Figure 9. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=175°C,VCE=600V,VGE=0/15V,IC=75A,DynamictestcircuitinFigure E)
RG,GATERESISTOR[Ω]
t,SW
ITCHINGTIMES
[ns]
0 5 10 15 20 25 30 35 4010
100
1000
td(off)
tftd(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=600V,VGE=0/15V,IC=75A,RG=6Ω,DynamictestcircuitinFigure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SW
ITCHINGTIMES
[ns]
25 50 75 100 125 150 17510
100
1000
td(off)
tftd(on)
tr
Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=2.6mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th) ,GAT
E-EM
ITTE
RTHRES
HOLD
VOLTAG
E[V]
25 50 75 100 125 150 1751
2
3
4
5
6
7
8typ.min.max.
Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=175°C,VCE=600V,VGE=0/15V,RG=6Ω,DynamictestcircuitinFigure E)
IC,COLLECTORCURRENT[A]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
0 30 60 90 120 1500
10
20
30
40
50
60Eoff
Eon
Ets
Datasheet 9 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
Figure 13. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=175°C,VCE=600V,VGE=0/15V,IC=75A,DynamictestcircuitinFigure E)
RG,GATERESISTOR[Ω]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
0 5 10 15 20 25 30 35 400
5
10
15
20
25
30Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=600V,VGE=0/15V,IC=75A,RG=6Ω,DynamictestcircuitinFigure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
25 50 75 100 125 150 1750
2
4
6
8
10
12
14
16
18Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=175°C,VGE=0/15V,IC=75A,RG=6Ω,DynamictestcircuitinFigure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
400 450 500 550 600 650 700 750 8000
5
10
15
20
25
30Eoff
Eon
Ets
Figure 16. Typicalgatecharge(IC=75A)
QGE,GATECHARGE[nC]
VGE ,GAT
E-EM
ITTE
RVOLTAG
E[V]
0 50 100 150 200 250 300 350 4000
2
4
6
8
10
12
14
16VCC=240VVCC=960V
Datasheet 10 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,C
APAC
ITAN
CE[pF]
0 5 10 15 20 25 30100
1000
1E+4
Cies
Coes
Cres
Figure 18. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤600V,Tvj≤175°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC) ,SH
ORTCIRCUITCOLLEC
TORCURREN
T[A]
10 11 12 13 14 15 16 17 180
100
200
300
400
500
600
Figure 19. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE≤600V,startatTvj≤175°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,S
HORTCIRCUITW
ITHST
ANDTIME[µs]
10 12 14 16 18 200
5
10
15
20
25
30
35
40
45
Figure 20. IGBTtransientthermalresistance(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIEN
TTH
ERMAL
RES
ISTA
NCE[K/W
]
1E-6 1E-5 1E-4 0.001 0.01 0.1 11E-4
0.001
0.01
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.022753.8E-4
20.0477362.7E-3
30.087880.019881
42.0E-30.505051
52.7E-412.95671
Datasheet 11 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
Figure 21. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIEN
TTH
ERMAL
RES
ISTA
NCE[K/W
]
1E-6 1E-5 1E-4 0.001 0.01 0.1 11E-4
0.001
0.01
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.011043.6E-4
20.108892.7E-3
30.15730.01681
42.8E-30.44863
53.0E-412.11241
Figure 22. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,R
EVER
SEREC
OVE
RYTIME[ns]
300 350 400 450 500 550 600 650 700200
300
400
500
600
700
800
900
1000Tvj = 25°C, IF = 75ATvj = 175°C, IF = 75A
Figure 23. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr ,REV
ERSE
REC
OVE
RYCHAR
GE[µC]
300 350 400 450 500 550 600 650 7000
2
4
6
8
10
12
14
16Tvj = 25°C, IF = 75ATvj = 175°C, IF = 75A
Figure 24. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,R
EVER
SEREC
OVE
RYCURREN
T[A]
300 350 400 450 500 550 600 650 7000
10
20
30
40
50
60Tvj = 25°C, IF = 75ATvj = 175°C, IF = 75A
Datasheet 12 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
Figure 25. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr /dt,diodepeakrateoffallofI
rr [A/µs]
300 350 400 450 500 550 600 650 700-400
-350
-300
-250
-200
-150
-100
-50
0Tvj = 25°C, IF = 75ATvj = 175°C, IF = 75A
Figure 26. Typicaldiodeforwardcurrentasafunctionofforwardvoltage
VF,FORWARDVOLTAGE[V]
IF ,FORWAR
DCURREN
T[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.50
50
100
150
200
250
300Tvj = 25°CTvj = 175°C
Figure 27. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF ,FO
RWAR
DVOLTAG
E[V]
25 50 75 100 125 150 1750.5
1.0
1.5
2.0
2.5
3.0
3.5IF = 38AIF = 75AIF = 150A
Datasheet 13 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
MILLIMETERS
5.44 (BSC)
c
E3
D
E
D1
D2
L1
e
L
N
E1
b1
A
A1
b
A2
b2
DIM
0.59
1.35
-
20.9016.25
15.70
1.05
19.80
13.10
3
MIN4.902.31
1.161.90
1.96
0.053
0.8230.640
0.618
0.023
0.1930.091
0.0460.075
0.041
0.077
0.780
0.516
0.66
16.85
1.5513.50
21.10
15.90
20.10
1.35
4.30
5.102.51
1.262.10
MAX
2.06
0.026
3
0.663
0.5310.061
0.831
0.626
0.053
0.7910.169
INCHES
MIN MAX0.2010.099
0.0500.083
0.081
EUROPEAN PROJECTION
ISSUE DATE
0
SCALE
7.5mm
5 5
0
REVISION
13-08-2014
01
DOCUMENT NO.
Z8B00174295
0.214 (BSC)
-
1.96 0.0772.25 0.089
D3 0.58 0.0230.78 0.031
R 1.90 0.0752.10 0.083
Package Drawing PG-TO247-3-46
Datasheet 14 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
t
a b
td(off)
tf t
rtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE
(t)
t
t
tt1 t
4
2% IC
10% VGE
2% VCE
t2
t3
E
t
t
V I toff
= x x d
1
2
CE CE
t
t
V I ton
= x x d
3
4
CE C
CC
dI /dtF
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switchingcharacteristics
Figure E. Dynamic test circuit
Figure D.
I (t)C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Qrr a b
rr a b
= +
= +
Qa Qb
V (t)CE
VGE
(t)
I (t)C
V (t)CE
Testing Conditions
Datasheet 15 V2.32019-04-15
IKQ75N120CH3
HighspeedswitchingseriesthirdgenerationIGBT
RevisionHistory
IKQ75N120CH3
Revision:2019-04-15,Rev.2.3Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-04-26 Final data sheet
2.2 2017-06-09 Update Figure 6
2.3 2019-04-15 Update condition for Vgeth page 4 and Fig. 11
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
PublishedbyInfineonTechnologiesAG81726München,Germany©InfineonTechnologiesAG2019.AllRightsReserved.
ImportantNoticeTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesoffice(www.infineon.com).
PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotiveElectronicsCouncil.
WarningsDuetotechnicalrequirementsproductsmaycontaindangeroussubstances.ForinformationonthetypesinquestionpleasecontactyournearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.