mosfet coolmos™ ce - infineon technologies
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MOSFETMetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE800VCoolMOS™CEPowerTransistorIPA80R310CE
DataSheetRev.2.1Final
PowerManagement&Multimarket
2
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
TO-220FP
DrainPin 2, Tab
GatePin 1
SourcePin 3
1DescriptionCoolMOS™CEisarevolutionarytechnologyforhighvoltagepowerMOSFETs.Thehighvoltagecapabilitycombinessafetywithperformanceandruggednesstoallowstabledesignsathighestefficiencylevel.CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthebenefitofreducedsystemcostsandhigherpowerdensitydesigns.
Features•Highvoltagetechnology•Extremedv/dtrated•Highpeakcurrentcapability•Lowgatecharge•Loweffectivecapacitances•Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound•Qualifiedforconsumergradeapplications
ApplicationsLEDLightingandAdapterinQRFlybacktopology
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 800 V
RDS(on),max 310 mΩ
Qg.typ 91 nC
ID,pulse 51 A
Eoss@400V 6.7 µJ
Body diode di/dt 400 A/µs
Type/OrderingCode Package Marking RelatedLinksIPA80R310CE PG-TO 220 FullPAK 8R310CE see Appendix A
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800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
2MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID --
--
16.710.6 A TC = 25°C
TC = 100°C
Pulsed drain current2) ID,pulse - - 51 A TC=25°C
Avalanche energy, single pulse EAS - - 670 mJ ID=3.4A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.50 mJ ID=3.4A; VDD=50V; see table 10
Avalanche current, repetitive IAR - - 3.40 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...640V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 35 W TC=25°C
Storage temperature Tstg -40 - 150 °C -
Operating junction temperature Tj -40 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screws
Continuous diode forward current IS - - 16.7 A TC=25°C
Diode pulse current2) IS,pulse - - 51 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 4 V/ns VDS=0...400V,ISD<=IS,Tj=25°Csee table 8
Maximum diode commutation speed dif/dt - - 400 A/µs VDS=0...400V,ISD<=IS,Tj=25°Csee table 8
Insulation withstand voltage forTO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min
1) Limited by Tj max <150°C.2) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG
5
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
3Thermalcharacteristics
Table3ThermalcharacteristicsTO-220FullPAKValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 3.6 °C/W -
Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
6
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=0.25mA
Gate threshold voltage V(GS)th 2.1 3.0 3.9 V VDS=VGS,ID=1mA
Zero gate voltage drain current IDSS --
--
25250 µA VDS=800,VGS=0V,Tj=25°C
VDS=800,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.250.78
0.31- Ω VGS=10V,ID=11A,Tj=25°C
VGS=10V,ID=11A,Tj=150°C
Gate resistance RG - 0.7 - Ω f=1MHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 2320 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 90 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy related1) Co(er) - 59 - pF VGS=0V,VDS=0...480V
Effective output capacitance, time related2) Co(tr) - 124 - pF ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=10V,ID=16.7A,RG=4.7Ω;seetable9
Rise time tr - 15 - ns VDD=400V,VGS=10V,ID=16.7A,RG=4.7Ω;seetable9
Turn-off delay time td(off) - 72 - ns VDD=400V,VGS=10V,ID=16.7A,RG=4.7Ω;seetable9
Fall time tf - 6 - ns VDD=400V,VGS=10V,ID=16.7A,RG=4.7Ω;seetable9
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 12 - nC VDD=640V,ID=16.7A,VGS=0to10V
Gate to drain charge Qgd - 46 - nC VDD=640V,ID=16.7A,VGS=0to10V
Gate charge total Qg - 91 - nC VDD=640V,ID=16.7A,VGS=0to10V
Gate plateau voltage Vplateau - 6.0 - V VDD=640V,ID=16.7A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
7
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 1 - V VGS=0V,IF=16.7A,Tj=25°C
Reverse recovery time trr - 550 - ns VR=400V,IF=16.7A,diF/dt=100A/µs;see table 8
Reverse recovery charge Qrr - 15 - µC VR=400V,IF=16.7A,diF/dt=100A/µs;see table 8
Peak reverse recovery current Irrm - 51 - A VR=400V,IF=16.7A,diF/dt=100A/µs;see table 8
8
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
5
10
15
20
25
30
35
40
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
1021 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-1 100 10110-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
9
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 20 250
10
20
30
40
50
60
20 V10 V
6.5 V
6 V
5.5 V
5 V
ID=f(VDS);Tj=25°C;tp=10µs;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 20 250
5
10
15
20
25
30
35
20 V
10 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=150°C;tp=10µs;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 10 20 30 400.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
4 V 4.5 V 5 V 5.5 V 6 V 6.5 V
10 V
RDS(on)=f(ID);Tj=150°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [Ω]
-50 -25 0 25 50 75 100 125 1500.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
98% typ
RDS(on)=f(Tj);ID=11.0A;VGS=10V
10
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 100
10
20
30
40
50
60
150 °C
25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;tp=10µs;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS [V]
0 20 40 60 80 1000
1
2
3
4
5
6
7
8
9
10
160 V 640 V
VGS=f(Qgate);ID=17Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.010-1
100
101
102
25 °C150 °C
IF=f(VSD);tp=10µs;parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS [mJ]
25 50 75 100 125 1500
100
200
300
400
500
600
700
EAS=f(Tj);ID=3.4A;VDD=50V
11
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-75 -50 -25 0 25 50 75 100 125 150 175680
700
720
740
760
780
800
820
840
860
880
900
920
940
960
VBR(DSS)=f(Tj);ID=0.25mA
Diagram14:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 500100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 500 600 700 80001234567891011121314151617
Eoss=f(VDS)
12
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
6TestCircuits
Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trrtF tS
QF QS
dIF / dt
dIrr / dt
VDS(peak)
Qrr = QF +QS
trr =tF +tS
VDS
IF
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
13
800VCoolMOS™CEPowerTransistor
IPA80R310CE
Rev.2.1,2015-06-23Final Data Sheet
7PackageOutlines
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0.617
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0.394
0.503
0.116
0.124
0.111
0.353
2.862.42
2.54 (BSC)
5.08
28.70
0.95
15.67
0.40
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2.83
3.15
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2.85
0.113
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0.636
0.025
0.035
0.419
0.136
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Dimensions do not include mold flash, protrusions or gate burrs
Figure 1 Outline PG-TO 220 FullPAK, dimensions in mm/inches
14
800V CoolMOS™ CE Power Transistor
IPA80R310CE
Rev. 2.1, 2015-06-23Final Data Sheet
8 Appendix A
Table 11 Related Links
• IFX CoolMOS TM CE Webpage: www.infineon.com
• IFX CoolMOS TM CE application note: www.infineon.com
• IFX CoolMOS TM CE simulation model: www.infineon.com
• IFX Design tools: www.infineon.com
15
800V CoolMOS™ CE Power Transistor
IPA80R310CE
Rev. 2.1, 2015-06-23Final Data Sheet
Revision History
IPA80R310CE
Revision: 2015-06-23, Rev. 2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-09-25 Release of final version
2.1 2015-06-23 Continuous current Id update
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Published byInfineon Technologies AG81726 München, Germany© 2015 Infineon Technologies AGAll Rights Reserved.
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InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest InfineonTechnologies Office (www.infineon.com ).
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