Download - ガリウム・ヒ素系新材料 GaInNAs の高エネルギー ……±にそのバンドギャップは大きくなる傾向にあるが、GaNAs およびGaInNAs では逆にバンドギャップが小さくなる。
GaInNAs
1050204
17 2 22
1
11 3 12 GaInNAs 4 13 N 5 14 7
2 8
3
31 9 32 RBS11
33 12 34 14
35 16 36 Kfactor 18 37 22
4 23
5
51 GaInAs25 52 GaInNAs30
6
61 33 62 34 63 35
2
GaInNAs 11 IT
WDMGaInNAsN
InP GaInAsP/InP GaInAsP/InP
GaInAsP/InP
GaAsGaInNAs/GaAs GaInNAs/GaAs
GaInNAs
3
12 GaInNAs NGaInNAs
1995 GaInAsN
1.3 InPGaInNAs InPGaAs
4
13 N GaInNAsN 11
GaNAs GaInNAs
GaNAsGaAs N GaAs 1.42eV GaN 3.2eV N GaInNAs WDM 1.2m1.6m N
5
Ec300meV GaAs GaInAsP
GaAs/AlAs 1.3m N GaInNAs/GaAs Type
N
6
13
RBS
Li
RBS
3
7
RBS/
RBSGaInNAs GaInAs
8
RBSRutherford Backscattering SpectroscopyRutherford
1911
(H
)He
RBSRBS10
RBS m 100depth resolutionmmm
1 RBS [MeV]
9
range1MeVHSimm
mRBS
10
32 RBS 1900
10 1
1 1
1911 RBS1959 RubinMeV
19631967 RBS
RBS
1975
11
33 RBS RBS
31 E0 M1M21
31
31
31
1
2(E)
12
32
ee 2=14.4eVE
32Z22
E2
13
34 RBS MeVm 32
32
32 E0
E()
33
14
E1()E1
31E2 E S(E)
34
1 2
inout
35
36
S(E0) S(E1()) S(kE1()) S(E())
in S (E0)out S(E())
37
15
35 110RBS yield 2 33 110
10
channel
1
33 a
16
33 b
a110
b110 10
17
36 Kfactor
34
Kfactor 34m1 v0 E0 v1 v2
1/2 m1v0 2 = 1/2 m1v1 2+1/2m2v2 2 38
m1v0 = m1v1cosm2v2cos () 39
0 = m1v1sin-m2v2sin () 310
E0E1kinematic factor K K = E1 / E2 311
E0 = 1/2 m1v0 2E1 = 1/2 m1v1 2 39
18
(m2v2cos )2=(m1v0m1v1cos)2 312
(m1v0m1v1cos)2 = m12v0 22m1 2 v0v1cos+m12v12cos2
310 2
(m2v2sin )2=(m1v1sin)2 313 312
313
(m2v2cos )2+(m2v2sin )2=(m1v0m1v1cos)2+(m1v1sin)2
m22v22 (cos2sin 2)
= m12v022m1 2 v0v1cos+m12v12(cos2+ sin2)
m22v22 = m12v022m1 2 v0v1cos+m12v12 314
38 2m2
m1 m2v0 2 = m1 m2v1 2+m22v2 2 315 315314
m1 m2v0 2 = m1 m2v1 2+m12v0 22m1 2v0v1cos+m12v12
316
316m1
19
m2v0 2 = m2v1 2+m1v0 22m1 v0v1cos+m1v12
(m1+m2)v1 22m1 v0v1 cos+(m1m2 ) v02 = 0
20
316
RBS 316
K
21
37
Ga In
GaxIn1-xAs
InAs = 6.058 = 0
GaAs = 5.653 = 1
22
2296 GaInNAs 2121 GaInAs
41 GaInNAsN
42 GaInAsN
41
23
RBS 55mm RBSRBS
He
2MeV Tilt 5.0 0.0 360.0 1.0/ Step 168
20000nC Angular Scan
24
51 GaInAs 2121GaInAs(N)
2121GaInAs
GaAs 810ch820chIn 8650ch905ch
25
min
min = Channeling yield / Random yield 51
Channeling Angular Scan 0010011 4545
26
27
In GaAsGaInAs SQW SQW
51
28
2121GaInAs011 Angular Scan 1.1 2121GaInAs SQWIn 26
GaxIn1-xAs Ga0.74In0.26As
6.058 6.058[]5.653[] 74 / 100 5.7583 0.4
tan46.12121GaInAs / 5.653 2121GaInAs5.8743 GaInAs 2
29
52 GaInNAs GaInNAs
N NN Z 2 NZ= GaZ=31 GaAs 001011 Channeling Angular Scan2267GaInNAs GaAs 780ch790chIn 830ch890ch
30
31
GaAs 001011GaAs In 001 dip011 dip GaInNAs 001 GaAs011InGaInNAs
32
61
GaInAs GaInNAsmin 15
001Channeling Angular Scan GaInAs GaInNAs
InSQW 011Channeling Angular Scan GaInAs GaInNAsGaInAs SQW
SQW SQW GaInNAs N In
33
62 (1) SEI157 (2) (3) [] 1994 (4) 2000 (5) () 1995 (6) () 1994 (7) 2003
34
63
35