ガリウム・ヒ素系新材料 gainnas の高エネルギー...

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ガリウム・ヒ素系新材料 GaInNAs の高エネルギーイオンビームによる解析 成沢 教授 学籍番号 1050204 加藤 浩高 平成 17 2 22 高知工科大学 電子・光システム工学科

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GaInNAs

1050204

17 2 22

1

11 3 12 GaInNAs 4 13 N 5 14 7

2 8

3

31 9 32 RBS11

33 12 34 14

35 16 36 Kfactor 18 37 22

4 23

5

51 GaInAs25 52 GaInNAs30

6

61 33 62 34 63 35

2

GaInNAs 11 IT

WDMGaInNAsN

InP GaInAsP/InP GaInAsP/InP

GaInAsP/InP

GaAsGaInNAs/GaAs GaInNAs/GaAs

GaInNAs

3

12 GaInNAs NGaInNAs

1995 GaInAsN

1.3 InPGaInNAs InPGaAs

4

13 N GaInNAsN 11

GaNAs GaInNAs

GaNAsGaAs N GaAs 1.42eV GaN 3.2eV N GaInNAs WDM 1.2m1.6m N

5

Ec300meV GaAs GaInAsP

GaAs/AlAs 1.3m N GaInNAs/GaAs Type

N

6

13

RBS

Li

RBS

3

7

RBS/

RBSGaInNAs GaInAs

8

RBSRutherford Backscattering SpectroscopyRutherford

1911

(H

)He

RBSRBS10

RBS m 100depth resolutionmmm

1 RBS [MeV]

9

range1MeVHSimm

mRBS

10

32 RBS 1900

10 1

1 1

1911 RBS1959 RubinMeV

19631967 RBS

RBS

1975

11

33 RBS RBS

31 E0 M1M21

31

31

31

1

2(E)

12

32

ee 2=14.4eVE

32Z22

E2

13

34 RBS MeVm 32

32

32 E0

E()

33

14

E1()E1

31E2 E S(E)

34

1 2

inout

35

36

S(E0) S(E1()) S(kE1()) S(E())

in S (E0)out S(E())

37

15

35 110RBS yield 2 33 110

10

channel

1

33 a

16

33 b

a110

b110 10

17

36 Kfactor

34

Kfactor 34m1 v0 E0 v1 v2

1/2 m1v0 2 = 1/2 m1v1 2+1/2m2v2 2 38

m1v0 = m1v1cosm2v2cos () 39

0 = m1v1sin-m2v2sin () 310

E0E1kinematic factor K K = E1 / E2 311

E0 = 1/2 m1v0 2E1 = 1/2 m1v1 2 39

18

(m2v2cos )2=(m1v0m1v1cos)2 312

(m1v0m1v1cos)2 = m12v0 22m1 2 v0v1cos+m12v12cos2

310 2

(m2v2sin )2=(m1v1sin)2 313 312

313

(m2v2cos )2+(m2v2sin )2=(m1v0m1v1cos)2+(m1v1sin)2

m22v22 (cos2sin 2)

= m12v022m1 2 v0v1cos+m12v12(cos2+ sin2)

m22v22 = m12v022m1 2 v0v1cos+m12v12 314

38 2m2

m1 m2v0 2 = m1 m2v1 2+m22v2 2 315 315314

m1 m2v0 2 = m1 m2v1 2+m12v0 22m1 2v0v1cos+m12v12

316

316m1

19

m2v0 2 = m2v1 2+m1v0 22m1 v0v1cos+m1v12

(m1+m2)v1 22m1 v0v1 cos+(m1m2 ) v02 = 0

20

316

RBS 316

K

21

37

Ga In

GaxIn1-xAs

InAs = 6.058 = 0

GaAs = 5.653 = 1

22

2296 GaInNAs 2121 GaInAs

41 GaInNAsN

42 GaInAsN

41

23

RBS 55mm RBSRBS

He

2MeV Tilt 5.0 0.0 360.0 1.0/ Step 168

20000nC Angular Scan

24

51 GaInAs 2121GaInAs(N)

2121GaInAs

GaAs 810ch820chIn 8650ch905ch

25

min

min = Channeling yield / Random yield 51

Channeling Angular Scan 0010011 4545

26

27

In GaAsGaInAs SQW SQW

51

28

2121GaInAs011 Angular Scan 1.1 2121GaInAs SQWIn 26

GaxIn1-xAs Ga0.74In0.26As

6.058 6.058[]5.653[] 74 / 100 5.7583 0.4

tan46.12121GaInAs / 5.653 2121GaInAs5.8743 GaInAs 2

29

52 GaInNAs GaInNAs

N NN Z 2 NZ= GaZ=31 GaAs 001011 Channeling Angular Scan2267GaInNAs GaAs 780ch790chIn 830ch890ch

30

31

GaAs 001011GaAs In 001 dip011 dip GaInNAs 001 GaAs011InGaInNAs

32

61

GaInAs GaInNAsmin 15

001Channeling Angular Scan GaInAs GaInNAs

InSQW 011Channeling Angular Scan GaInAs GaInNAsGaInAs SQW

SQW SQW GaInNAs N In

33

62 (1) SEI157 (2) (3) [] 1994 (4) 2000 (5) () 1995 (6) () 1994 (7) 2003

34

63

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