リソグラフィ応用光源（duv/ euv ）の最近の進展...topics of euvl-symposium photonics...

| Copyright © Gigaphoton Inc.

リソグラフィ応用光源（DUV / EUV）の最近の進展RECENT PROGRESS OF LITHOGRAPHY LIGHT SOURCE (DUV/EUV)

Copyright 2019 GAPHOTON INC. all rights reserved.

Dr. Hakaru MizoguchiExecutive Vice President, CTO, Gigaphoton Inc.

Hiroaki Nakarai, Tamotsu Abe, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodama, Yutaka Shiraishi, Tatsuya Yanagida, Georg Soumagne, Tsuyoshi Yamada, Takashi Saitou

Gigaphoton Inc. Hiratsuka facility: 3-25-1 Shinomiya Hiratsuka Kanagawa,254-8567, JAPAN


Agenda

∎ Introduction: Gigaphoton Business update

∎ Trend of lithography light source （DUV〜EUV）

∎ DUV R&D

∎ EUV R&D▸ History

▸ Experiment A: >330W Power Challenge of EUV Source

① CO2 Laser Power Upgrade

② Beam Uniformity Upgrade at Plasma Point

③ Optimization of Plasma Parameters

▸ Experiment B:Long-term Test and Challenge for Long-life Mirror and Availability

④ Lifetime Extension of Collector Mirror

∎ Summary & Acknowledgement

Slide

2


Agenda



∎ DUV R&D









Slide

3


February 2, 2017

Slide

4

Gigaphoton Head office / R&D / Factory

Revenue Trends ($)


Gigaphoton Domestic Offices

YokkaichiHiroshima

Kumamoto

Headquarters

DUV R&D

DUV Fab

Support Locations

EUV R&D

Hiratsuka

Oyama

End User

Toshiba

Micron

Sony

Renesas

OEM

Nikon

Canon

Slide

5

Nagoya


Komatsu Industries

(Shanghai) Ltd.

End User

HLMC

SMIC

Gigaphoton

Singapore Branch

End User

Globalfoundries

Micron

Gigaphoton

Europe B.V

End User

Globalfoundries

Intel

OEM

ASML

Gigaphoton

Korea Inc.

End User

SK Hynix

Samsung

End User

Globalfoundries

Intel

Micron

Samsung

Gigaphoton

USA Inc.

Gigaphoton Overseas Offices

Slide

6

Gigaphoton

Taiwan ROCEnd User

TSMC

UMCCopyright 2019 GAPHOTON INC. all rights reserved.

104

200

287315

340396

466

570

648702

795

891945

1019

1093

1196

1284

1384

1486

0

200

400

600

800

1000

1200

1400

1600

2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

To

tal I

nsta

llatio

ns

More than 1500 light source is working

Increasing an average of 80 units per year

since 2010

Breakdown at the end of fiscal 2017

▸KrF ……………………919 (66%)

▸ArF Dry ……………... 126 (9%)

▸ArF Immersion ………339 (24%)

＊

＊Includes planed units

Total light source installations

Slide

7


Gigaphoton DUV Light Sources in operation (WW)

>1500

2019

KrF

69

ArF

47

TOTAL

SHIPMENTS

116

2Q2019 Business Highlights - DUV

DUV Business

∎ GPI recorded to ship 116 unit

shipment as 51% M/S in FY2018

(Apr., 2018 – Mar., 2019)

∎ Stronger KrF demand driven by 3D

NAND device transitioning

∎ Released G45K as higher power

model to the market in 1Q2019

Slide

8

TOTAL

SHIPMENTS

96

FY2018 FY2017

KrF

52

ArF

44


CY2018 Light Source Projected Install Share Analysis

209TOTAL

UNITS

12

GPI

INSTALL

UNITS

S’pore+EU (21)

Mainland China

(47)

Taiwan (17)

Korea (85)

Japan (21)

50

8

31

3

GPI

INSTALL

SHARE

51%GPI

M/S

57%

59%

47%

source: GPI analysis with internal source Oct. 2018,

New machine only

US (18) 4

66%

22%

14%

Slide

9


Agenda



∎ DUV R&D









Slide

10


1

1

＜出典＞渡辺久恒「最先端半導体デバイスの動向と名のリソグラフィの現状と将来」電気情報通信学会総合大会、2013年3月

Unlimited challenge: Minimization of transistor structure

0. 25nm = Silicon atom

Minimum CMOS Transistor

5nm = 20 Silicon atom

1nm = 4 Silicon atom

Tra

nsis

tor

Gate

Len

gth


History & Trend of Exposure ToolSlide

12

DUV Exposure Tool

0.01

0.1

1

10

1980 1985 1990 1995 2000 2005 2010

Pattern

siz

e (

nm

)

KrF(248nm) ArF (Dry)

(193nm) ArF (immersion)(Equivalent 134nm)

45nm

65nm

90nm

130nm

180nm

250nm

350nm

750nm

1000nm

500nm

出展: ASML, Canon, Niko ホームページ掲載画像をギガフォトンで配置

EUV13.5nm

UV Exposure Tool

Mercury Lamp(i-line)(365nm)

Mercury Lamp(G-line)(436nm)


WW Semiconductor Manufacturing Market Size

$400B

$80B

$20B

$4B

$1000M


Multi-patterning

出典︓Next Generation Lithography, ASML, 2008 CD: Critical Design


Limit of ArF Multi-Patterning

Logic Device︓Transistor / cost is saturated even we use multi-pattening


Hyper fine process technology

1,700 Billion holes are created on the silicon wafer0

The hole size is 100nm diameter and 4.5mm depth

64memory layers

in 4.5µm

３D-NAND Flash︓

Cell structure


3D-NAND Flash

Slide

17

Memory Cell Connection Layer

~5um

Higher power

will be needed

Demand to KrF excimer

laser is increased


Logic Device︓Monetarization is mainstreamSlide

18

FIN FET

22nm

14nm

10nm


19

0

2,000

4,000

6,000

8,000

10,000

12,000

14,000

16,000

ArFi_DP EUV

EUV single exposure

Comparison between EUV and multi-patterning

レジスト塗布・ベーク

露光

現像

下地加工

レジスト除去


露光

現像

下地加工

レジスト除去

ArFi double patterning


第１露光

現像

スリミング

加工用膜成膜

全面エッチング

レジスト除去

レジスト塗布ベーク

第２露光（トリミング露光）

現像

不要部分エッチング除去

レジスト除去

下地加工

加工用膜除去


第１露光

現像

スリミング

加工用膜成膜

全面エッチング

レジスト除去

レジスト塗布ベーク

第２露光（トリミング露光）

現像

不要部分エッチング除去

レジスト除去

下地加工

加工用膜除去

Mach

ine c

ost ArFi

Exp.tool$50M/unit

EUV tool$100M/unit

Resist remove$5M/unit

Baker etc. $4M/unit


20

NXE-3400

Shipment in 2017

Igor Fomenkov (ASML); “EUV Lithography: Progress in LPP

Source Power Scaling and Availability”, EUVL workshop 2017,

2017/6/12-15 Berkeley, USA

←Still Source Power is large issue.

125W at present ( Target 250W )

TOPICS of EUVL-Symposium

February 2, 2017Photonics West 2017

ASML:EUVリソグラフィツールNXE3400で⽣産性、稼働率が大きく改善。ペリクルの耐久性も大幅に向上した。

Presentation Only

February 2, 2017Photonics West 2017

Market Trend of EUV Lithography (2019)

Recent Upward revision of EUV shipment EUV Mass Manufacturing started

U/W40→48

U/W 72 → 87

U/W 20→27

U/W 30 → 38

TSMC, Sumsung started to apply EUV lithography on 7nm+ HVM process. Number of EUV exposure tool

shipment is increasing rapidly. Item of discussion is shifting to availability and yield enhancement.


U/W 42→49

500W Source Power is Required at High NA tool


Jan van Schoot (ASML); “High-NA EUV lithography enabling Moore’s law in the next decade”,

EUVL workshop 2017, 2017/6/12-15 Berkeley, USA

BACUS + EUV 2017

Jan van Schoot (ASML); “High-NA EUV lithography enabling Moore’s law in the next decade”,

EUVL workshop 2017, 2017/6/12-15 Berkeley, USA

Larger testing tool for Higher NA optics

High-NA Optics Testing

At Present testing

Investment is on going

Slide

26

Jack Liddle (Zeiss); “Latest Developments in EUV Optics”,EUVL workshop 2017, 2017/6/12-15 Berkeley, USA

Jan van Scoot (ASML);”The future of EUV lithography :enabling Moor’s Low in the next decade”, EUVL symposium 2017,

2017/9/11-14, Monterey, USA

DUV Layers would be decreased after EUV HVM

29 26 30 27 27 27 27 27 27

5 67 8 7 7 7 7 7

3 3

7 7 7 7 7 7 713 16

1714

10 7 8 8 8

13 7 8 9 11

0

10

20

30

40

50

60

70

80

90

100

D21

D18

D17

D16

D15

D14

D13

D12

D11

2015 4Q16 2Q18 2020 2021 2022 TBD

KrF ArF ArFi (Conv) ArFi (High) EUV

16 11 1610 9

1316

13

7 6

10 13

57 5640 39

26

5 1426

0

10

20

30

40

50

60

70

80

90

100

N7 N7+ N7++ N5 N3

3Q17 4Q18 3Q19 3Q21 4Q23

KrF KrF (High NA) ArF ArFi EUV

Slide

27

2015 2016 2018 2020 2021 2022 Future 2017 2018 2019 2021 2023

EUV 1 3 7 8 9 11 5 14 26

KrF 29 26 30 27 27 27 27 27 27 16 11 16 10 9

KrF H/N 5 6 7 8 7 7 7 7 7 13 16 13 7 6

ArFD 3 3 7 7 7 7 7 7 7 10 13

ArFi 13 16 17 14 10 7 8 8 8 57 56 40 39 26

DUV TTL

50 51 61 56 51 48 49 49 49 86 83 69 66 54

CY2018 is the peak of DUV adoption in HVM.Memory Logic


Agenda



∎ DUV R&D









Slide

28


Key point of Light source for lithography is

“narrowed spectrum bandwidth” ⊿λ

and

“wavelength stability”⊿λ０

29

In deep UV region Big

refractive index dispersion

DUV lithography︓Line narrowed Laser + Monochromatic optics

Diffractive optical system

Laser

⊿λ０

⊿λ


Technical Difficulty of DUV lithography

Products Lineup for Tomorrow

193nm wavelength

4~6kHz repetition

45W-90W output

Utilizing same platform with ArFi

GT45A

ArF

G45K

KrF

193nm wavelength

6kHz max repetition

60-120W output

30% module life* improvement

GT65A

ArFi

DUV Lithography

248nm wavelength

4 kHz max repetition

40-50W output

20% module life* improvement

2019 2020

Slide

30


31

Line Narrowing Technology

Cancelling chromatic aberration of projection lens

→ Line Narrowing technology is Key

Line Narrow

Free Running

Discharge ChamberGrating

Prizm

Slit Slit

Output

Mirror

Optical Energy

10-20 mJ/pls

4000-6000Hz

40W-120W

Slide

31


G45K - High Output Power for Throughput Improvement

Slide

32

G45K

2019

∎ Stable performance with major key

parameter at 50W, as equivalent to 40W operation

∎ Released in 2019Q1, integrated into

ASML XT:860M and Canon ES6a


GT65A/40A Specs & Durability

33

Module Lifetime

CHB（OSC） 60Bpls

CHB（AMP） 60Bpls

LNM 60Bpls

MM 60Bpls

AFM 120Bpls

ARM 120Bpls

EFM 120Bpls

OBS UM 350Bpls

OBS LM 350Bpls

ABS M 350Bpls

OPS 350Bpls

Item UnitArF

GT40A

Immersion

GT65A

wavelength nm 193 193

Spectral Bandwidth pm 0.4 0.3

max. power (stabilized) W 45 60 - 120

max. repetition rate Hz 4000 6000

max. pulse energy (stabilized) mJ 11.25 15

Energy stability (sigma) % <±0.4 <±0.29

max. duty % 75% 75%

Pulse duration (FWHM) ns 70 130

Average beam dimensions (FWHM)H mm 7.0 7.0

V mm 14.4 12.5

Beam divergence (FWHM)H mrad 0.8 0.8

V mrad 2.0 1.2


ChamberGrating

Beam Expander

Chamber

Mirror

AmplifierOscillator [Low Power]

Synchronization System

Amplifier

MOPA System Injection Locking System

Amplifier

Unstable Resonator

Amplification system

Twin chamber laser system (MOPA & Injection Locking)Separation of Oscillator and AmplifierLoad of Line narrowing optics is lighter ( wavelength, intensity)

Line narrowed technology


Injection Lock ArF Excimer Laser for Micro-lithography

Slide

35

Mechanical W 2800mm

D 845mm

H 2120mm

Weight 3410kg

Performanc

eWavelength 193nm

Power 60 - 120W

Energy/pulse 10 - 20mJ

Rep.rate 6000Hz

Δλ (E95) 0.25pm

Laser chamber


2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

Evolution of GigaTwin Series

Slide

36

Spectrum Performance (x2)

Output Power (x3）

GigaTwin SeriesMore than 500 unit

GT40AGT60A

GT65A

GT64A

GT61AGT62A

GT63A


120W

20mJ x 6000Hz

193nm

0.3 pm FWHM

GT-Series got Laser Industry Award from the Laser Society of Japan ( 2019.4.29）Slide

37


Agenda



∎ DUV R&D









Slide

38


70% Reflection

EUV light transmittance is only 2% at 11 refection mirror system

High power light source for HVM exposure tools is the KEY Issue

Demand: >250W at 1st stage HVM

39

+ Mask (5)

∎ Light source issue in EUV lithography

Technical Difficulty of EUV lithography

year 2002-2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019

EUV Research & Development History

EUVA NEDO ( Matching Fund )

ETS-2

Proto#1

Proto#2

Pilot#1

Xe +YAG Laser↓

Sn +CO2 Laser

Slide

40

GIGAPHOTON (LPP)

USHIO (DPP) KOMATSU ( TIC, MTC )

KOMATSU (LPP)

Join

Venture

Finished

Study Apparatus

EUV & Photo

Material by EIDEC

Magnetic Mitigation

ETS-1

Pico second prepulase

Mitsubishi CO2 laser system

Liquid Xenon Jet System

Xe Jet

Nozzle System

Xenon LiquefactionSystem

TestingChamber

Xe Temperature: 160K - 190KXe Pressure: <5MPa

Xe Jet and Plasma

Liquid Xe

Jet

Plasma

N o z z leN o z z le

L iq u id X e L iq u id X e

J e tJ e t

Velocity :30m/s

Stability σ : 10μm @10mm

Start with Liquid Xe Jet target experiment with YAG laser driver

History of LPP source development 2004


EUV conversion efficiency (solid target) demonstrated in EUVA (2005)

Cavity depth (µm)

EU

V C

E (%

)

CO2

Nd:YAG

0 50 100 150 200 2500

1

2

3

4

5

We found out Tin + CO2 laser could be around 8% efficiency through Leading project & EUVA.


Kyusyu Univ., H. Tanaka et al.

Appl. Phys. Lett. 87,041503(2005)

estimated

to be 2%

Miyazaki Univ., T.

Higashiguchi et al.

SPIE Microlithography

2006, 6151-146(2006)

EUV conversion efficiency simulation by Osaka Univ. team (2006) 12/11/2019Copyright 2019 GAPHOTON INC. all rights reserved.

State of Art Gigaphoton LPP Source Configuration* was Established in 2007 *several patented

1. High ionization rate and CEEUV tin (Sn) plasma generatedby dual-wavelength shooting viaCO2 and pre-pulse solid-statelasers

2. Hybrid CO2 laser system withshort pulse high repetition rateoscillator and commercial cw-amplifiers

3. Tin debris mitigation with asuper conductive magnetic field

4. Accurate shooting control withdroplet and laser beam control

5. Highly efficient out-of-band lightreduction with grating structuredC1 mirror

Droplet

Generator

Superconductive

Magnets

Collector

Mirror

Droplet

Catcher

CO2 Pulse

Laser

Pre-pulse

Laser

Ion

Catcher

Slide

43



ETS-2 demonstrated at 10W avg. power and 50W power with Magnetic Mitigation.

12/11/2019



Gigaphoton found >50% advantage of conversion efficiency by pico-

second pre-pulse.

Slide

45

Pre-pulse(pico-second)Pre-pulse (nano-second)

Ideal

‘Dome’ like target

‘Disk’ like target

Shadow graph Shadow graph

400 um 400 um

X-ray CCD X-ray CCD

Very short pulse duration

with 1um wavelength

laser

Same optical path

between pre-pulse and

main

Slide

45

Average of 10 shots

Slide

45

Slide

45



CO2 AMP system experiment is on going in Mitsubishi electric co.

Osc. Unit

Amp. Unit

High power amplifier ETS achieved 20kW peak power.


| Copyright © Gigaphoton Inc.Copyright 2019 GAPHOTON INC. all rights reserved.

Hiratsuka Center at present

Proto#2Operational since November 2013

Pilot#1

First pilot system designed for NXE

integration

System for key technology

development in >100W

power level

Operational since July 2016

1F

Office for EUV

CR for EUV

Room for Komatsu

1F

2F

3F

4F

5F

CR for EUV

Room for Komatsu

Hiratsuka centerEV

EV

Bac

kya

rd

Utilities Area

B#2

B#1

B#3

2F

Dro

ple

t

Gen

era

tor

Test

ben

ch

10Hz EUV

test bench

Laser

Test

bench

EU

Vch

am

ber

Assem

bly

are

a

■EUV plasma study (<10Hz)

CE, ions energy etc.

Chamber

CO2 and pre-pulse

Lasers

■Droplet test bench

Reliability, Stability etc.

DLG

Chamber


Agenda



∎ DUV R&D









Slide

48


Layout of >330W EUV Light Source Pilot #1

Operational specification

(Target) HVM Source

Performance

EUV Power > 250W

CE > 4.0 %

Pulse rate 100kHz

Availability > 75％

Technology

Dropletgenerator

Droplet size < 20mm

CO2 laser Power > 20kW

Pre-pulselaser

Pulseduration

psec

Debrismitigation

Magnet,Etching

> 15 days ( >1500Mpls)

Operational specification

(Target) HVM Source

Performance

EUV Power > 250W

CE > 4.0 %

Pulse rate 100kHz

Availability > 75％

Technology

Dropletgenerator

Droplet size < 20mm

CO2 laser Power > 20kW

Pre-pulselaser

Pulseduration

psec

Debrismitigation

Magnet,Etching

> 15 days ( >1500Mpls)

EUV Exposure Tool

First HVM EUV Source

• Original design was 250W EUV source

• >330W Power Challenge with Upgraded Hardware

> 90 %

Slide

49


> 27 kW

>3 months

< 20 micron

> 5.5-6.0%

> 5.0%> 330W

~10 ps pulse duration

Pilot System EUV Chamber

Slide

50

Collector Mirror


Pilot System Droplet Generator

Z Flow camera

X flow camera

DLG X-Z Stage

DLG

Laser (CO2, Fiber)

PZT device

Timing sensor

Plasma Point

(250mm from nozzle)

X

Z

Droplet

catcher

Laser

mirror

Plasma

sensor

Y

OSC

LPP EUV Source Shooting Control System

Slide

51


Pilot#1 System in Operation

EUV Source Droplet Flow MonitorEUV Source Operations Desk

Slide

52


>330W Power Challenge with Upgraded Hardware

Slide

53

Target Q4 2018 On Going Q4 2019

Average Power 125W 250W-330W ≧330W

Repetition rate 100kHz 100kHz 100kHz

CO2 power (energy) at plasma

operation with dose ctrl./maximum

10kW/16kW

(100mJ/160mJ)

18kW/25kW

(180mJ/250mJ)

18kW/25kW

(180mJ/250mJ)

CE 4.0% 4.5~5.0% 5.5〜6%

Technology for high power

① CO2 Laser power Upgrade ✓ ✓② Beam Uniformity Upgrade at Plasma Point ✓ ✓③ Optimization of Plasma Parameters ✓④ Lifetime Extension of Collector Mirror <0.05%/Bpls ✓


① CO2 LASER POWER UPGRADE


Output laser power

Improvement of Higher-power CO2 laser

• High-efficient laser amplifier with transvers flow concept (Mitsubishi electric).

• Recent improvement achieved 27 kW laser power operation.

Transverse flow type amplifier


② BEAM UNIFORMITY UPGRADE

AT PLASMA POINT


Test apparatus for pre-pulse study

∎ EUV generation at 10Hz∎ Studies on CE improvement and debris mitigation∎ Measurement tools for EUV radiation and tin

particles and plasma characterization

Slide

57

Measurement tools・EUV radiation

- spectrometer

- imaging camera・Sn ions

-Faraday cup

-Electro static analyzer・Sn atoms

-Laser induced fluorescence・Sn fragments

- Mie scattering・Plasma

-Thomson scatteringDropletgenerator

and XY stage

pre-pulse

CO2 laser

EUV sensor

Visible

camera

backlight

Measurement

port #5

Measurement

port#6

Measurement

port #3

Measurement

port #2

Probe laser

input port

A B

Measurement

port #1

laser output

Measurement

port #4

Rotaryunit

for angular

distribution

measurement

Top view

Plasma

generation point

Overview of test apparatus


Key Technology for higher CE

∎ 5.8% CE at 180mJ was already confirmed in small test bench by increased plasma

size.

∎ CO2 beam non-uniformity of Pilot#1 due to beam expander design is improved.

Slide

58

Pilot#1

CO2 spot profile

Test bench

EUV 330W

CO2 beam

uniformity

Pilot#1

Plasma size

extension

CO2 18kW at 100kHz


LATEST SYSTEM OPERATION

DATA OF PILOT#1


Latest data for higher power

GIGAPHTON COFIDENTIAL: DOC#ID ED17L-556

∎ >360W with >5% CE at 100kHz operationis demonstrated at Pilot#1 (short term)

Slide

60

∎ Higher Droplet speed(>100m/s) realize 1mm spacing and demonstrate more stable EUV generation

365W

With 5.4% CE

301W

With 4% CE

Average 101m/s

3 sigma 3%

Presentation Only


Agenda



∎ DUV R&D









Slide

61


System Performance: 125W Operation Data

∎ 125W had been achieved with only 10 kW of CO2 power for 53Bpls operation.

Slide

62

Performance

Average power at IF 125W

Dose error average (3 sigma) 0.04%

Die yield (<0.16%) 98.5%

Pulse Number 53Bpls

Duty cycle 100%

In-band power 125W

Dose margin 40%

Collector lifetime 0.9%/Bpls

Repetition rate 100kHz


Availability: Status and Targets

Slide

63

DLG lifetime

Collector lifetime

Chamber maintenance

15 days

< 1 mo.

58 hrs.

15 days

3 mo.

45 hrs.

60 days

12 mo.

28 hrs.

15 days

6 mo.

38 hrs.

* Potential availability is calculated, based on

module lifetime and maintenance time.

DLG swap time 26 hrs 18 hrs 11 hrs16 hrs

21% improvement

achieved.

19% improvement planned.


Availability: Breakdown

GIGAPHTON COFIDENTIAL: DOC#ID ED18L-338

Slide

64


Latest 230W Middle-term Operation Data∎ Closed loop performance of 230W has been just started. ( shown data is only 30min

however experiment is still continuing).

Slide

65

Performance

Average power at IF 230W

Dose error average (3 sigma) 0.09%

Dose margin 20%

Repetition rate 100kHz

Presentation Only


④ LIFETIME EXTENSION OF

COLLECTOR MIRROR


Photomask technology + EUVL Symposium 2018

Etching and Dissociation Sn balance on the Mirror Surface

∎ Chemical Aquarium on the Mirror Surface

Slide

67

∎ Tin ionization & magnetic guiding

▸ Tin is ionized effectively by

double pulse irradiation

▸ Tin ions are confined with

magnetic field

▸ Confined tin ions are guided and

discharged from exhaust ports

∎ Protection & cleaning of collector with H2 gas

▸ High energy tin neutrals are decelerated by H2 gas in order to prevent

the sputtering of the coating of collector.

▸ Deposited tin on the collector is etched by H radical gas*.

▸ Gas flow and cooling systems for preventing decomposition of etched tin

(SnH4)

*H2 molecules are dissociated to H radical by EUV-UV radiation from plasma.


Capping Layer

1st Si Layer

2nd Mo Layer

3rd Si Layer

・・

・

Cross-section of Cap layer after long-term testing

Thickness changes at capping layer due to sputtering.

First Si layer become thicker and reflectance down around 30% due to

oxidization.

Slide

68

Sputtering

Capping Layer

Sn

H2

O

H2O

Change of Capping Layer and Multi-Layer under Tin Plasma Sputtering


Suppression of Fast Tin Ion

Ion energy and charge-state

measurement with electro-static

analyzer(ESA)

Improvement of Ion energy distribution

is essentially effective.


GIGAPHOTON CONFIDENTIAL | DOC#: ED18L-108

EUV Plasma Cooling

Slide

70

Higher plasma Temp.

at Old 125W experiment

38WCalculated line by

SRIM

Higher

powerGas

heating

Gas density

decrease

Gas stopping

decrease

Tin atoms on mirror surface Temperature

∎ Sputtering rate enhancement occurred by gas heating at higher output power.

∎ EUV plasma cooling is key of mirror lifetime extension at higher power operation.

<Mechanism>

EUV Source Workshop 2018 @ HiLase Plague Copyright 2019 GAPHOTON INC. all rights reserved.

New125W experiment

Cooled plasma temp.

Cooled plasma temp.

Higher plasma Temp.

New Capping Layer Search at New SUBARU Japan

• Screening of oxidation of reflection layer with synchrotron radiation (λ=13.5nm)

source ( Name of SOR in Hyogo Univ.= “New SUBARU”)

• Improvement of collector lifetime is on going

Two beam lines for EUV test in “New SUBARU”

EUV Beam lines

(BL09, BL10)

w/o Capping layer

w/ Conventional capping layer

w/ New capping layer for 330W

Capping layer evaluation results by New SUBARU


Collector Mirror: Lifetime Status

∎ Capping layer and Tin contained Gas flow

Improvement are effective.

∎ Collector reflectivity degradation is certainly

improving.

Slide

72

Latest Data (125W level operation; June 2019)

10%/Bpls2.5%/Bpls

0.9%/Bpls

（0.5%/Bpls）


Data at SPIE AL-2019 (Feb.2019)

Agenda



∎ DUV R&D









Slide

73


Summary

∎ EXPERIMENT-A: >330W Power Challenge of EUV Source

▸ Gigaphoton redefined power target to ≧330W ave. with -0.05%/Gpls, >90% availability

▸ High conversion efficiency 5.0% is realized with improved driver laser technology.

▸ High speed (>100m/s) & small (20micron) droplet successfully stabilize EUV emission..

▸ CE enhancement >6% by plasma parameter optimization is clarified through small experimental device by Tomson scattering measurement.

▸ CO2 laser power upgrade >27kW and Beam uniformity upgrade is successfully done.

▸ >350W operation is successfully demonstrated at Pilot#1 system (short term) .

∎ EXPERIMENT-B: Long-term Test and Challenge for Long-life Mirror and Availability

▸ 125W had been achieved with only 10 kW of CO2 power for around 50Bpls operation.

▸ Pilot#1 system achieved potential of >85% Availability (2weeks average).

▸ -0.15%/Gpls with 125W ave. was demonstrated during 30Mpls with mirror test.

▸ 230W operation is just started to prove durability of high power EUV source.

Demonstration of Full Spec. >330W operation will be by Q4 2019

Slide

74


Acknowledgements

Thank you for co-operation:

- Mitsubishi electric CO2 laser amp. develop. team: Dr. Junichi Nishimae, Dr. Shuichi Fujikawa, Dr. Yoichi

Tanino* and others

- Dr. Kentaro Tomita, Prof. Kiichiro Uchino and others in Kyushu University

- Dr. Akira Endo :HiLase Project (Prague) and Prof. Masakazu Washio and others in Waseda University

- Prof. Takeshi Higashiguchi in Utsunomiya Univ.

- Prof. Takeo Watanabe in New Subaru Institute

- Dr. Jun Sunahara, Predu Univ. and Dr. Katsunori Nishihara, Prof. Hiroaki Nishimura in Osaka University

Thank you for funding:

EUV source development funding is partially support by NEDO ( (New Energy and Industrial Technology

Development Organization) in JAPAN

Thank you to my colleagues:

EUV development team of Gigaphoton: Hiroaki Nakarai, Tamotsu Abe, Takeshi Ohta, Krzysztof M Nowak,

Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodama, Yutaka Shiraishi,

Tatsuya Yanagida, Tsuyoshi Yamada, Taku Yamazaki, Takashi Saitou and other engineers

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75



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