1

1. 21

-- --

2.

3.

4.

2

3

•

•

•

4

H2

/

EV/HEV

EV/HEV

HEMS

HEMS

HEMS

HEMS

BEMS

BEMS

4

CPU

5

Si

Ge

Sn

Al

Ga

In

P

As

Sb

S

Se

Te

Mg

Zn

Cd

2

3

4

5

B C N O

III IV V VI

6

Si SiC

1/10

100

1/200

ND=4x1015cm-3 30 m

n n p p

1.2V@50A/cm2

SiC-MOSFET

250V@50A/cm2

330 m

Si-MOSFET

ND=4x1013cm-3

n-

n p n p

3300V MOSFET

SiC-FET

70mm

Si-IGBT (600V,400A)

350mm

200mm

100mm

Pow

er L

oss

[W

]

Transformer

Rectifier

Forward inverter

Output inverter

SiC-FET + SiC-SBD Si-IGBT + Si-PiN

224

48

43

89

404W

102

37

43

34

216W

19kHz

1/2

40kHz x2

1/30

7

4kW Si

0.1W/cm3

5.5kW Si

0.4W/cm3

Si SiC

3kW

7W/cm3

Si SiC

8

MOSFET, SBD etc.

0 1μm

2-inch

100μm

0 1μm

0

1nm

0.5nm

SiC

6cm

8cm

9cm

9

10

1

10

40

200 1000 8000

Blocking Voltage (V)

On

-Res

ista

nce

(m

cm2)

Si limit Si-IGBT

Cool MOS

GaN limit

SiC limit

SiC-MOSFET

SiC-JFET(SIT)

GaN-HEMT

Amper-class

AIST

AIST

AIST

AIST

AIST AIST

AIST AIST

AIST

AIST

AIST

AIST

1.8 m cm

IEDM’06

World record

2.57 m cm

SBD

1.0 m cm SIT

AIST

AIST

AIST

9 m cm

SBD

2.57m cm2 @2700V

PiN diode (5kV)

MOSFET

1.8m cm2 @660V

4.3m cm2 @1100V

SIT JFET)

1.0m cm2 @700V

1.2m cm2 @1270V

GaN HFET

0.12m cm2 @56V

0.5m cm2 @200V

2.5m cm2 @550V

9m cm2 @1.7kV

AIST

11 11

etc.

Si WBG SiC, GaN

•

•

12

13

SiC, GaN,

/

/

CO2

1970

14

15

GaN

SiC

16

2010

SiC

Si

•

•

•

•

0 1 2 3 0

1

2

17

18

SiC

6

ESICAT

19

•

•

• 2008

SiC

SiC

COCN <http://cocn.jp>

20