joo-hyung chae jihwan park seoul national university seoul...

6
Energy-Efficient Dynamic Comparator with Active Inductor for Receiver of Memory Interfaces Jae Whan Lee Seoul National University Seoul 08826 Rep. of Korea [email protected] Hyunkyu Park Seoul National University Seoul 08826 Rep. of Korea [email protected] Joo-Hyung Chae Seoul National University Seoul 08826 Rep. of Korea [email protected] Jaekwang Yun Seoul National University Seoul 08826 Rep. of Korea [email protected] Jihwan Park SK Hynix Icheon 17336 Rep. of Korea [email protected] Suhwan Kim Seoul National University Seoul 08826 Rep. of Korea [email protected] ABSTRACT In this paper, we propose a dynamic comparator that improved the operation performance of receiver (RX) with the effort to reduce power consumption. It is implemented via double-tail StrongARM latch comparator with an active inductor and efforts are made to minimize power consumption for high-speed resulting in better energy efficiency at the targeted high frequency. In this regard, our comparator is suitable for memory application RX to satisfy both low-power and high-speed. It is applied to the single-ended RX designed with a continuous-time linear equalizer, a clock generator and a quarter-rate 2-tap decision-feedback equalizer which is appropriate for the high-frequency memory application. Compared to the conventional one, our design, fabricated in 55nm CMOS process, provides an improvement of 7% in unit interval (UI) margin under the same power consumption and receives up to 10Gb/s PRBS15 data at BER < 10 -12 with 0.4 UI margin and energy efficiency of 0.67pJ/bit. Keywords Dynamic comparator; StrongARM latch; Active Inductor; Decision Feedback Equalizer; Timing Critical Path 1. INTRODUCTION The data-rate of DDR5 and LPDDR5 has increased to 6.4Gbps, and the next generation of the memory interface is expected to operate at a data-rate above 10Gbps. As high data-rates without excessive I/O power dissipation for memory applications, a channel may have limitations on speeding up the communication since high capacitive load and impedance discontinuity result in bandwidth limitation with reflective post-cursor intersymbol interference (ISI). It is well known that an effective way to address the issues is to use a decision-feedback equalizer (DFE), which can recover post-cursor ISI at receiver (RX) side by utilizing previous decision data [1]. Therefore, DFE design will have a significant impact on the memory function. DFE and comparator are closely interdependent, and comparator’s role is crucial in achieving low-power and high- speed DFE. Therefore, comparators must cope with the need while achieving as low-power consumption, better performance and smaller area as possible [2]. SAMPLE: Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Conference’10, Month 12, 2010, City, State, Country. Copyright 2010 ACM 1-58113-000-0/00/0010 …$15.00. DOI: http://dx.doi.org/10.1145/12345.67890 (a) (b) Figure 1. (a) Schematic of the conventional StrongARM latch comparator and (b) its operation phases CK CK V in V ref V o+ V o- CK Sampling C Regeneration C Decision C Reset OUTP OUTN C CK

Upload: others

Post on 11-Oct-2020

5 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: Joo-Hyung Chae Jihwan Park Seoul National University Seoul …analog.snu.ac.kr/Members/changho.hyun/Publications/... · 2019. 2. 1. · SK Hynix Icheon 17336 Rep. of Korea jihwan.park@analog.snu.ac.kr

Energy-Efficient Dynamic Comparator with Active Inductor for Receiver of Memory Interfaces

Jae Whan Lee

Seoul National University Seoul 08826 Rep. of Korea

[email protected]

Hyunkyu Park Seoul National University

Seoul 08826 Rep. of Korea

[email protected]

Joo-Hyung Chae Seoul National University

Seoul 08826 Rep. of Korea

[email protected]

Jaekwang Yun

Seoul National University Seoul 08826 Rep. of Korea

[email protected]

Jihwan Park SK Hynix

Icheon 17336 Rep. of Korea

[email protected]

Suhwan Kim

Seoul National University Seoul 08826 Rep. of Korea

[email protected]

ABSTRACT In this paper, we propose a dynamic comparator that improved the

operation performance of receiver (RX) with the effort to reduce

power consumption. It is implemented via double-tail StrongARM

latch comparator with an active inductor and efforts are made to

minimize power consumption for high-speed resulting in better

energy efficiency at the targeted high frequency. In this regard, our

comparator is suitable for memory application RX to satisfy both

low-power and high-speed. It is applied to the single-ended RX

designed with a continuous-time linear equalizer, a clock generator

and a quarter-rate 2-tap decision-feedback equalizer which is

appropriate for the high-frequency memory application. Compared

to the conventional one, our design, fabricated in 55nm CMOS

process, provides an improvement of 7% in unit interval (UI)

margin under the same power consumption and receives up to

10Gb/s PRBS15 data at BER < 10-12 with 0.4 UI margin and energy

efficiency of 0.67pJ/bit.

Keywords Dynamic comparator; StrongARM latch; Active Inductor; Decision

Feedback Equalizer; Timing Critical Path

1. INTRODUCTION The data-rate of DDR5 and LPDDR5 has increased to 6.4Gbps, and

the next generation of the memory interface is expected to operate

at a data-rate above 10Gbps. As high data-rates without excessive

I/O power dissipation for memory applications, a channel may have

limitations on speeding up the communication since high capacitive

load and impedance discontinuity result in bandwidth limitation

with reflective post-cursor intersymbol interference (ISI). It is well

known that an effective way to address the issues is to use a

decision-feedback equalizer (DFE), which can recover post-cursor

ISI at receiver (RX) side by utilizing previous decision data [1]. Therefore, DFE design will have a significant impact on the

memory function.

DFE and comparator are closely interdependent, and

comparator’s role is crucial in achieving low-power and high-

speed DFE. Therefore, comparators must cope with the need while

achieving as low-power consumption, better performance and

smaller area as possible [2].

SAMPLE: Permission to make digital or hard copies of all or part of this

work for personal or classroom use is granted without fee provided that

copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy

otherwise, or republish, to post on servers or to redistribute to lists,

requires prior specific permission and/or a fee. Conference’10, Month 1–2, 2010, City, State, Country.

Copyright 2010 ACM 1-58113-000-0/00/0010 …$15.00.

DOI: http://dx.doi.org/10.1145/12345.67890

(a)

(b)

Figure 1. (a) Schematic of the conventional StrongARM latch

comparator and (b) its operation phases

CK

CK

Vin Vref

Vo+ Vo-

CK

SamplingC RegenerationC DecisionC Reset

OUTP

OUTNC

CK

Page 2: Joo-Hyung Chae Jihwan Park Seoul National University Seoul …analog.snu.ac.kr/Members/changho.hyun/Publications/... · 2019. 2. 1. · SK Hynix Icheon 17336 Rep. of Korea jihwan.park@analog.snu.ac.kr

There exist a lot of techniques to design comparators such as

open loop comparator, preamplifier based comparator, dynamic

latched comparator [3, 4]. Among these techniques, dynamic

latched comparators are preferred for high-speed and low-power

applications, especially StrongARM latch comparator shown in

Fig. 1 (a) is most widely used due to its advantages such as high-

speed, zero static power consumption, high input-impedances and

full swing output [5]. The operation of the comparator consists of

four phases: Sampling, Regeneration, Decision and Reset as

illustrated in Fig. 1 (b). When clock goes high, sampling period

starts and allows the parasitic capacitors to discharge according to

the comparator’s bandwidth. If there is not enough discharging time

at high- speed, it may be difficult to obtain a margin for the decision

period. Furthermore, a study on comparator improvement

considering its performance, power consumption, size is essential.

A double-tail regenerative latch [6], a charge-steering based

StrongARM latch comparator [7], Lewis Gray comparator [8] and

various modified techniques [9] are presented to improve the

conventional StrongARM latch comparator. However, they could

not alleviate comparator speed-power trade-off.

To solve such issues, this paper presents a comparator that

alleviates speed-power trade-off. We minimize power consumption

and enhance bandwidth using the active inductor at the desired

comparator’s operation phase only. Therefore, once our comparator

is applied to DFE, it helps to relax the most important factor in DFE,

the timing critical path. This is led to the achievement of wider bit

error rate (BER) eye-opening with less power consumption.

2. STRONGARM LATCH COMPARATOR

WITH ACTIVE INDUCTOR Fig. 2 (a) represents a structure that connects a double-tail

StrongARM latch comparator with the active inductor to reduce

timing critical path, and large devices are used to spatially average

out the comparator’s offset mismatch. Clock inputs can be divided

into CKL and CKS and when CKS is turned off, there will be no

current path from the active inductor. Fortunately, all CKS has to

do is transferring signal to the latch during its initial sampling time.

That is because sampled information after the initial sampling

period does not impact latch as much compared to the figures

sampled in the beginning. In addition, it needs to be turned off after

the sampling as it could give an adverse effect on the operation at

the worst case when noise or data changes. This is the same

situation as an active inductor is on and wants the current path to

disappear when operating. Therefore, we attempt to minimize

power consumption by blocking input data path that may have an

adverse effect on the operation of latch after the sampling and the

active inductor that had finished its role in the sampling period. We

use the fact that in its operation phase, sampling slope increases by

an active inductor and that latch begins operation before the

conventional one using less power in which it helps to broaden

decision margin. Fig. 2 (b) shows CKL and CKS that go into the

proposed StrongARM latch comparator. These two clocks are

made with AND gate using clock phase before 90 degrees and the

current clock phase and become a period where the active inductor

moves around. This is the same as a sampling period and power

consumption increases in this period. There is enough scope to

reduce power consumption since sampling could be done by one

inverter delay [10]. However, if the worst case when its input signal

is very noisy or ultra-high-speed, sufficient sampling time is also

essential for latch operation. Therefore, we decided CKS be

sufficient sampling period for the latch operation. As we compared

power with targeted high frequency, power efficiency could get

better as it goes to high-speed. As there are fewer effects on BER

of the active inductor in low-speed, if there is another on-off switch,

the current path could be blocked by switching off the active

inductor.

(a)

(b)

Figure 2. (a) Schematic of the proposed StrongARM latch

comparator and (b) input clock phases

Vin Vref

Vo+Vo-

CKS

CKL

CKL

M1

M2 M4

M3 CKL

CKSCKS

Regeneration+Decision

(power saving) Reset

CKS

CKL

Sampling

(slope )

(a)

(b)

Figure 3. (a) Half circuit and (b) small-signal equivalent

circuit of the proposed StrongARM latch comparator

Vin

Vout

C

R

M1

M2

1gm3

- __// gm4

- __1

R

1gm3

- __// gm4

- __1C

Vgs2

gm2vgs2 ro2

vin gm1vin ro1

+

_

vout

Page 3: Joo-Hyung Chae Jihwan Park Seoul National University Seoul …analog.snu.ac.kr/Members/changho.hyun/Publications/... · 2019. 2. 1. · SK Hynix Icheon 17336 Rep. of Korea jihwan.park@analog.snu.ac.kr

As large area is mandatory for attaining high levels of

inductance and performance, implementation of passive inductors

on the chip is deemed difficult. The active inductor is composed of

resistive and capacitive elements [11]. The active inductor load

circuit and the PMOS transistor with the resistor connected

between the gate of PMOS transistor and low impedance node. A

half circuit and a small-signal analysis are performed to

characterize the behavior of the proposed idea and to verify its

bandwidth effect as shown in Fig. 3 (a) and (b). In Fig. 3 (b), we

can obtain,

𝑔𝑚1𝑣𝑖𝑛 +𝑣𝑜𝑢𝑡

𝑟𝑜1+

𝑣𝑜𝑢𝑡

− 1

𝑔𝑚3//−

1

𝑔𝑚4

+𝑣𝑜𝑢𝑡

𝑟𝑜2+ 𝑔𝑚2𝑣𝑔𝑠2 +

𝑣𝑜𝑢𝑡−𝑣𝑔𝑠2

𝑅= 0, (1)

where, 𝑟𝑜 denote the small-signal resistor of MOS device,

𝑣𝑔𝑠2 =𝑣𝑜𝑢𝑡

𝑅𝑗𝑤𝐶+1 . (2)

The impedance of this active inductor is given by

𝑍(𝑠) =𝑠𝐶𝑅+1

𝑔𝑚 , (3)

where 𝑔𝑚 is transconductance of the PMOS transistor. The benefit

of the active inductor is the improvement of the bandwidth

achieved through adding the zero. There have been efforts to

increase speed by adding active inductors to either output drivers

or continuous-time linear equalizer (CTLE) [12, 13]. However, we

noticed that there is a need to add active inductors to DFE itself and

therefore improved the timing critical path.

Fig. 4 shows the operation of the proposed and conventional

comparator. When the bandwidth of comparator is more amplified

during sampling the data, the decision period for the proposed

(Decisionp) is longer than that of the conventional one (Decisionc).

We took an advantage of the fact that sampling slope increases via

active inductor in a timely manner and broadens decision margin

since it begins operating before the conventional latch with less

power during the operation phase in StrongARM latch comparator.

Fig. 5 is the simulation results of decision margin per power

consumption versus sampling frequency. As there is a need to

achieve sufficient decision margin using less power, we divided the

percentage of decision margin by current consumption and defined

this as decision efficiency and compared it for further research. It

is confirmed that the active inductor influence bandwidth and

secure more critical time than conventional applications with better

power efficiency at high a sampling frequency (> 6Gb/s).

3. QUARTER-RATE RECEIVER

We designed the RX to compare the effect of the comparator’s

performance to the DFE’s timing critical path and power

consumption. In the RX, upon the entrance of single-ended signal

data through the channel becomes equalized by CTLE and the

signal enters the DFE which is suitable for the memory interface.

Fig. 6 represents the quarter-rate RX architecture. Here, the

quadrature clock generator receives differential clock inputs from

outside sources and an IQ divider (IQ DIV) generates 4-phase

quarter-rate clock signals. 2 tap DFE gives feedback with h1 and

h2, and the tap weights are programmed to fixed values with current

digital-to-analog converters.

Figure 4. Operation of the proposed and conventional

comparator

SamplingC RegenerationC DecisionC Reset

OUTP

OUTNC

DecisionPRegenerationP

CKS

OUTNP

CKL

latches

starts

SamplingP

Figure 5. Simulation results of decision margin per power

consumption versus sampling frequency

Reversal point

Frequency (GHz)

Decis

ion

eff

icie

ncy

(%/μ

A)

1 2 3 4 5 60

0.4

0.8

1.2

1.6

proposed comparator

conventional comparator

Figure 6. Proposed quarter-rate RX architecture

S-R

latch

CK[1,0]

S-R

latch

S-R

latch

S-R

latch

h2

h2

h2

h2

h1 = +1

h1 = -1

h1 = +1

h1 = -1

h1 = +1

h1 = -1

h1 = +1

h1 = -1

OUTφ0

Data

CKP

CKN

IQ

DIV

CK

BU

F

S-to-D

CK[3:0]2

2

4

OUTφ1

OUTφ2

OUTφ3

DFE

Quadrature Clock Gen.

CK[2,1]

CK[3,2]

CK[0,3]

CTLE

Capacitive Degeneration

Linear Equalizertiming critical path

Current-mode

Summer

Vref Gen.

VREFSEL6

Page 4: Joo-Hyung Chae Jihwan Park Seoul National University Seoul …analog.snu.ac.kr/Members/changho.hyun/Publications/... · 2019. 2. 1. · SK Hynix Icheon 17336 Rep. of Korea jihwan.park@analog.snu.ac.kr

A major challenge in the design of a DFE is ensuring that the

feedback signals have settled accurately at the slicer input before

the next data decision is made. Accordingly, the critical timing path

in which signal is delivered via the comparator, mux and S-R latch

should be within 1 unit interval (UI) as expressed as (5), and

therefore the timing critical path should be considered in a high-

speed application. This work reduced timing critical path by adding

the active inductor on comparator which is the most important

factor in DFE, further achieving better performance without

exceeding power consumption than the conventional one.

𝑡𝑐𝑜𝑚𝑝𝑎𝑟𝑎𝑡𝑜𝑟 + 𝑡𝑚𝑢𝑥 + 𝑡𝑆−𝑅 𝑙𝑎𝑡𝑐ℎ < 1𝑈𝐼 (5)

4. EXPERIMENTAL RESULTS

Our quarter-rate RX was fabricated in 55nm CMOS process. Fig.

7 shows the microphoto and magnified layout of the proposed RX.

The active area is 0.015 mm2, including CTLE, DFE, quadrature

clock generator and some test circuitry. There are conventional

DFE and proposed DFE to apply each conventional and proposed

comparator for comparing them under the same conditions.

Fig. 8 (a) shows a measurement environment that is suitable for

the J-BERT to transmit the data to the chip and to receive the data

back and eventually set up the bit error rate test. The codes that

determine enable signals and intensity of DFE weight transfer

signals through I2C to the chip. The equalizer was tested with 12-

inch FR-4 trace channel. Fig.8 (b) plots the measured frequency

response of the trace and the loss at 10Gb/s reaches 10 dB for the

trace.

Fig. 9 is a plot of measured power consumption of the RX with

the conventional StrongARM latch comparator and the RX with

proposed one when the pseudo-random binary sequence (PRBS) 15

pattern is given. This shows that our RX is improved in power

efficiency at higher speed and that higher data rate is measurable

due to the increase in bandwidth. The proposed RX consumes

6.7mW (0.67pJ/bit) at 10Gb/s from a 1.2V supply. Although better

power efficiency can be achieved via cutting off an active inductor

at low speed, this paper targeted high frequency for designing and

comparison. The BER was measured at 7Gb/s where comparators

consume the same power.

We estimate BER in RX as it is expected that performance of

comparator will have a direct impact on the improvement of timing

critical path of DFE in figuring out the comparator’s data decision

margin. Fig. 10 (a) shows the bathtub curves with 7Gb/s PRBS data

of length of 215-1 for 12 inch trace. To achieve BER<10-12, each

conventional equalizer and proposed equalizer allows clock phase

margin of 0.68 and 0.75 UI while the circuit is operating at a supply

voltage of 1.2V. It indicates estimated values that each compared

conventional DFE and what was proposed. From the result above,

we can see that the proposed structure has better performance with

Figure 7. The microphoto and magnified layout of the

proposed receiver

Conv. DFE

Proposed DFE

CTLE

100μm

40μm

Clock Gen.Quarter-rate

Receiver

PC

DIN

I2C command

12 inch FR-4

CLKs

PWR/GND

J-BERT

(AGILENT N4903A)

PWR source

(Agilent E3631A)

DOUT

(a)

(b)

Figure 8. (a) Measurement environment and (b) measured

frequency response of the 12-inch FR-4 channel

-10dB loss

(@ 10 Gb/s)

Frequency (GHz)

Ch

an

nel

Ga

in

(dB

)

1 2 3 4 5 6 7

-10

-4

0

-8

-6

-2

-12

-14

Figure 9. Measured Data transfer rate versus power

consumption

BER measured point

(7 Gb/s)

Data transfer rate

(Gb/s)

Pow

er C

on

sum

pti

on

(mW

)

4 5 6 7 8 9 105.5

6.0

6.5

7.0

7.5

CTLE & proposed DFE

CTLE & conventional DFE

Targeted

Frequency

(>5Gb/s)

Page 5: Joo-Hyung Chae Jihwan Park Seoul National University Seoul …analog.snu.ac.kr/Members/changho.hyun/Publications/... · 2019. 2. 1. · SK Hynix Icheon 17336 Rep. of Korea jihwan.park@analog.snu.ac.kr

Table 1. Comparison with previous low-power RXs

Reference JSSC

[14]

ISSCC

[15]

ASSCC

[16]

This Work

Conv.

RX

Prop.

RX

Process

(nm) 90 40 65 55

Design

CTLE +

1-Tap

DFE

CTLE +

2-Tap

DFE

CTLE +

1-Tap

DFE

CTLE +

2-Tap DFE

Clocking Half rate Quarter

rate Half rate Quarter rate

Supply

voltage

(V)

1.0 1.15 1.0 1.2

BER 10-12 10-12 10-12 10-12

Channel

loss (dB) 24 16 25 10

Horizontal

Eye

Opening

(UI)

0.36 0.26 0.25 0.38 0.4

Max. Data

rate

(Gb/s)

20 22 21 8 10

Energy

efficiency

(pJ/bit)

2.0 0.94 0.96 0.84 0.67

having 7% better BER at the same speed and same power status.

This is reliable result as the experiment is conducted and the result

is collected in the same environment. Fig. 10 (b) shows the bathtub

curves with 10Gb/s PRBS data of length of 215-1 for 12 inch trace

as well. As the bandwidth of the proposed comparator increases,

the proposed DFE achieves 0.4 UI, unlike the conventional one.

Measured parameters of this RX are compared with previous

high-speed low-power RX including CTLE and DFE in Table 1. It

summarizes the performance and the results with those of the prior

DFEs running with similar power efficiency. The table shows that

the DFE with proposed comparator achieves higher maximum data

rate than the DFE with the conventional comparator. Since we set

the target data rate to compare the two DFEs, we fixed the gain

controllability of the CTLE. With such controllability, there is

room to achieve higher data rates.

5. CONCLUSION In conclusion, a StrongARM latch comparator with the active

inductor exhibits a faster comparison speed and achieves lower

power consumption at the targeted high-speed. We applied

comparator to DFE where low-power and timing critical path is

crucial in high-speed RX. When comparing the proposed DFE and

conventional DFE designs, our DFE provides an improvement of

7% in UI margin and higher maximum data rate compared to the

conventional DFE with the most used conventional comparator.

Our RX achieves 0.67pJ/bit energy efficiency with a 12 inch FR4

PCB trace at a supply voltage of 1.2V. Also, it is measured to

receive up to 10Gb/s PRBS15 data at BER < 10-12 with 0.4 UI

margin.

6. ACKNOWLEDGMENTS This research was supported by the MOTIE (Ministry of Trade,

Industry & Energy) (10080570) and KSRC (Korea Semiconductor

Research Consortium) support program for the development of the

future semiconductor device.

7. REFERENCES [1] H. Lim et al., “A 5.8-Gb/s adaptive integrating duobinary DFE

receiver for multi-drop memory interface,” IEEE J. of Solid-State Circuits (JSSC), vol. 52, no. 6, pp.1563-1575, June 2017.

[2] S. J. Bae, et al., “A 40 nm 7 Gb/s/pin single-ended transceiver with jitter and ISI reduction techniques for high-speed DRAM interface,” Symp. on Very Large Scale Integration (VLSI), pp. 193–194, June 2010.

[3] S. Choudhary, S. Bhat, J. Selvakumar, “High gain and low power design of preamplifier for CMOS comparator,” 3rd International Conference on Signal Processing and Integrated Networks (SPIN), pp. 63–66, Feb. 2016.

[4] S. Kim, D. Kim, M. Seok, “Comparative study and optimization of synchronous and asynchronous comparators at near-threshold voltages,” IEEE International Symposium on Low Power Electronics and Design (ISLPED), pp. 1-6, Jul. 2017.

[5] A. Pravin, N. Sarma, F. Basha, M. Satyanarayana, “Design of low power efficient CMOS dynamic latch comparator,” J. of Very Large Scale Integration and Signal Processing (JVSP), vol. 6, no. 6, pp. 343-352, Dec. 2016.

[6] S. Mashhadi, R. Lotfi, “Analysis and design of a low-voltage low-power double-tail comparator,” IEEE Transactions on Very Large Scale Integration (VLSI), pp. 343-352, Feb. 2014.

[7] M. Ayesh, S. Ibrahim, M. Aboudina, “Design and analysis of a low-power high-speed charge-steering based strongarm comparator,” 28th International Conference on Microelectronics (ICM), pp. 209-212, Dec. 2016.

[8] J. He, S. Zhan, D. Chen, “Analyses of static and dynamic random offset voltages in dynamic comparators,” IEEE

(a)

(b)

Figure 10. Measured RX bathtub curves for (a) 7-Gb/s and (b)

10-Gb/s PRBS15 data

0.75 UI

Clock phase

(UI)

BE

R

-0.9

10-12

-0.6 -0.3 0 0.3 0.6 0.9

10-10

10-8

10-6

10-4

10-2

100

10-14

0.68 UI

proposed Conv. DFE off

0.4 UI

Clock phase

(UI)

BE

R

-0.6

10-12

-0.4 -0.2 0 0.2 0.4 0.6

10-10

10-8

10-6

10-4

10-2

100

10-14

proposed Conv. DFE off

Page 6: Joo-Hyung Chae Jihwan Park Seoul National University Seoul …analog.snu.ac.kr/Members/changho.hyun/Publications/... · 2019. 2. 1. · SK Hynix Icheon 17336 Rep. of Korea jihwan.park@analog.snu.ac.kr

Transactions on circuits and systems 1 (TCAS-1), pp. 911-919, May 2009.

[9] V. Sharma, G. Sharma, D. Kumar, “High speed power efficient dynamic comparator designed in 90nm CMOS technology,” International Conference on Communication, Control and Intelligent Systems (CCIS), pp. 368-371, Nov. 2015.

[10] H. Kimura et al., “A 28 Gb/s 560 mW multi-standard serdes with single-stage analog front-end and 14-tap decision feedback equalizer in 28 nm CMOS,” IEEE J. of Solid-State Circuits (JSSC), vol. 49, no. 12, pp. 3091-3103, Dec. 2014.

[11] F. Yuan, “CMOS active inductors and transformers: Principle, implementation and applications,” Springer, 1st edition, June 2008.

[12] T. Musah et al., “A 4–32 Gb/s bidirectional link with 3-tap FFE/6-tap DFE and collaborative CDR in 22 nm CMOS,” IEEE J. of Solid-State Circuits (JSSC), vol. 49, no. 12, pp. 3079-3088, Dec. 2014.

[13] J. Song, H. Lee, J. Kim, S. Hwang, C. Kim, “1V 10Gb/s/pin single-ended transceiver with controllable active-inductor-based driver and adaptively calibrated cascade-DFE for post-lpddr4 interfaces,” IEEE International Solid-State Circuits Conference (ISSCC), pp. 320-322, Feb. 2015.

[14] S. Ibrahim and B. Razavi, “Low-power CMOS equalizer design for 20-Gb/s systems,” IEEE J. of Solid-State Circuits (JSSC), vol. 46, no. 6, pp. 1321–1336, May 2011.

[15] K. Jung, A. Amirkhany , K. Kaviani, “A 0.94mW/Gb/s 22Gb/s 2-tap partial-response DFE receiver in 40nm LP CMOS,” IEEE International Solid-State Circuits Conference (ISSCC), pp. 42-43, Feb. 2013.

[16] Y. You, S. Chakraborty, R. Wang, J. Chen, “A 21-Gb/s, 0.96-pJ/bit serial receiver with non-50% duty-cycle clocking 1-tap decision feedback equalizer in 65nm CMOS,” IEEE Asian Solid-State Circuits Conference (ASSCC), pp. 1-4, Nov. 2015.