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Mitsuru SatoTOKYO OHKA KOGYO CO., LTD.Advanced Material Development Division 1

TOK Resist & Material Development Status for Immersion Lithography

TOK Resist & Material Development Status for Immersion Lithography

TOK Resist &Material Development Status for Immersion Lithography (January 28, 2004)

Contents

Development Approaches

Imaging Performance

Contamination Study and Resist Screening

Development Roadmap

Summary


Development Approaches for Immersion Materials

Cover Material ConceptApplication with Conventional Resist

New Cover Material Development

Non Cover Material ConceptModification of Conventional Resist

New Resist Development

Cover Material ConceptApplication with Conventional Resist


Non Cover Material ConceptModification of Conventional Resist

New Resist Development


TOK Cover Material Concept

Prospects+ Protection of Resist Film (Water Uptake, Outgas)+ Less Contamination Effect to Fluid and Lens+ Control of Surface Tension (Fluid Supply and

Removal)+ Stabilization of Process Delay Effect+/- Reflectance ControlConcerns- Additional Coat/Removal Steps for Cover Material

BARC/Substrate

Resist Film

Fluid

Cover Material


Feasibility Study on 193nm Immersion Lithography

BARC/Substrate

Resist Film

Fluid

Cover Material

BARC/Substrate

193nm Acrylate Resist

DIW

TSP-3A

In Collaboration with Nikon　

Two Beam Interference Exposure(65nm Lines in 130nm Pitch)

Mag.:100k


Feasibility Study on 157nm Immersion Lithography

BARC/Substrate

Resist Film

Fluid

Cover Material

BARC/Substrate

157nm Fluoro Resist

Fluorinated Fluid

TSP-5A

Mag.:150k

In Collaboration with Nikon　

Two Beam Interference Exposure(65nm Lines in 130nm Pitch)


Resist Components DependencyTOK-ILP01

Dry

Wet

213nm Two-beam Interference Exposure (0.81NA)Target: 131nm pitch

TOK-ILP03 TOK-ILP06

BARC/Substrate

193nm Acrylate Resist

DIW


Contamination Study ConceptR

esis

tex

.100

nmFl

uid

ex.

500

µmLe

nsStatic Scanning Exposure


Contamination StudyR

esis

tex

.100

nmFl

uid

ex.

500

µmLe

ns

Scanning/Exposure

1

2

3

4

Contamination and/or Declaration

Media

BehaviorLens Fluid Resist

Possible Less Less

Possible Possible Possible

Possible Possible Possible

Less Less Possible

Pressure and Temperature: Constant

1

4

2

3

Refractive IndexTransparency

pHConductivity

Impurity Conc.(Gas/Contaminant)

Bubble

ThicknessRoughness

Surface EnergySensitivity

ProfileRmax/Rmin/etc

::

ThicknessRoughness

TransparencySurface Energy

:::

ThicknessRoughness

TransparencySurface Energy

:::

Refractive IndexTransparency

pHConductivity

Impurity Conc.(Gas/Contaminant)

Bubble

ThicknessRoughness

Surface EnergySensitivity

ProfileRmax/Rmin/etc

::


Thickness Change Measurement

Fluid

QCM Oscillator Measurement equipment

QCM Cell

O-ring

Cell Body

Quartz CrystalResist FilmSpacer

Cap

Electrode

QCM Cell

Data Analysis Equipment

Acryl Platform

Swel

ling

Swel

ling

Dis

solv

ing

Dis

solv

ing

0 10 20 30 40 50 60

Soaking Time (s)

Unexposed

Exposed

-5

-4

-3

-2

-1

0

1

2

3

4

5

0 10 20 30 40 50 60

Soaking Time (s)∆

T (n

m)

Unexposed

Exposed

COMA Platform


Resist Surface AnalysisNon Exposure Post Exposure

RMS: 0.35nm

RMS: 0.38nm

RMS: 0.37nm

RMS: 0.40nm

DrySample PreparationResist: TOK-ILP03PAB: 110°C-90sThickness: 350nmExposure: 193nm Open Frame

30mJ/cm2

(Immersion in DIW: 600s)

AFM MeasurementScan Mode: TappingScan Speed: 1HzScan Area: 3x3mm2

Z Axis: 5nm

Wet


Resist Sensitivity Measurement with R-SSS

Resist CoatingResist Coating

PABPAB

PEBPEB

TSP CoatingTSP Coating

Soft BakeSoft Bake

ExposureExposure

TSP RemovalTSP RemovalDevelopmentDevelopment

Soaking (**min)

Cover Material Concept

Resist CoatingResist Coating

PABPAB

PEBPEB

ExposureExposure

DevelopmentDevelopment

Soaking (**min)

Conventional ApproachExposure Latitude Plots

Soak Seq.Dry Seq.

TargetCD

Eop (Soak)Eop (Dry)

“Eop Ratio” =Eop (Soak)

Eop (Dry)

Dry Seq. Soak Seq. Eop Ratio

101.0%

107.7%

Resist

AcrylPlatform

COMAPlatform

Measurement: 130nm 1:1 L/S


Dissolution Rate Monitoring Method

Exposure Rmin Rmax tan θ

Dry 4.7 x 10-3 2.4 x 102 9.6

Wet 4.7 x 10-3 2.3 x 102 9.5

0.001

0.01

0.1

1

10

100

1000

0.1 1 10 100

Exposure Energy (mJ/cm²)

Dis

olut

ion

Rat

e (n

m/s

)

Dry

Wet

Sample PreparationResist: TOK-ILP03PAB: 110°C-90sThickness: 350nmExposure: 193nm Open Frame 30mJ/cm2

(Immersion in DIW: 600s)PEB: 110°C-90sDevelopment:NMD-3 2.38%, 23°C-60s


Extraction Method with Model ResistResist Formulation• Base Resin: Acrylic ter-polymer• PAG: Triphenylsulfonium perfluorobutanesulfonate

(3.0wt% of Base Resin)• Quencher: Trioctylamine (0.25wt% of Base Resin) • Solvent: Ethyl lactate (EL)

Propylene grycol monomethyl ether acetate (PGMEA)Process Conditions• Substrate: Silicon• Resist PAB: 130°C-90s• Resist Thickness: 200nm• TSP-3A PAB: 90°C-60s• TSP-3A Thickness: 38nm• Exposure: 193nm Open Frame 30mJ/cm2 (58% Area)Sampling• Extraction: DIW 30ml, RT-300s, Post PAB/Exp.


Extraction Method Results

SubstrateModel Resist

DIW

Sample

Exposure Non Post

EL UDL UDL

PGMEA UDL UDL

Trioctyl amine (2*10-13) (3*10-13)

(TPS)+ 6*10-12 UDL

(PFBS)- 3*10-11 3*10-11

F- UDL UDL

(Lactic acid)- UDL 1*10-12

(Acetic acid)- 3*10-12 2*10-12

(Formic acid)- 5*10-12 NDUDL: Under the calculated detection limit

Model Resist

Substrate

DIW

TSP-3ASubstrate

Model Resist

DIW

TSP-3A

(mol/cm²)

Non Post Non Post

UDL UDL UDL UDL 2*10-12






UDL UDL 1*10-12 UDL 8*10-13

UDL UDL 2*10-12 2*10-12 1*10-12

UDL UDL 5*10-12 3*10-12 2*10-12

CalculatedDetected Limit

TSP-3A TSP-3A / Model Resist

Analysis Methods: GC-MS (Organic Compounds), Ion Chromatography (Organic Acid), Capillary Electrophoresis (Sulfonic Acid)


Positive Consideration

The maximum value of 3 x 10-11 mol/cm2 means;

2.7 × 10-10 mole fraction per 30 x 30mm2

Remarks: 300 seconds soaking

In comparison to the NIST Update;

∆n ~ (0.05 – 4) x 10-6 per 10-6 mole fractionJohn H. Burnett, ISMT Immersion Lithography Workshop (July 11, 2003)

Further data collection during exposure and under various conditions are necessary


Negative Consideration

The extracted PAG amount of 3 x 10-11 mol/cm2 means over 2 % of the total PAG amount of 1.2 x 10-9

~ 1.2 x (1 x 1 x 200nm) x (3.0 / 103.25) / 562

The extracted amine amount of 3 x 10-13 mol/cm2

means around 0.2 % of the total amine amount of 1.6 x 10-10

~ 1.2 x (1 x 1 x 200nm) x (0.25 / 103.25) / 353 Remarks: resist film density ~ 1.2 g/cm2 and 300 seconds soaking

The cover material application would be recommended in the initial development stage


2003 2005 2006

TOK 193nm IL Resist and MaterialDevelopment Roadmap

2004

Feasibility ConfirmationFeasibility Confirmation

γ-Resist

β-Resist

Application PhaseApplication Phase

193nm Initial Resist Screening

TOK-ILP SeriesImaging Evaluation: 2-BIEResist Screening: R-SSS, QCM, DRM New Resist Development for <1.0NA Scanner

Pattern Target: IL (35nm), L/S (65nm), CH (70nm)Process Latitude: Sensitivity, EL, DOF, LER

Resist Optimization for >1.0NA Scanner

Pattern Target: IL (25nm), L/S (45nm), CH (50nm)Process Latitude: Sensitivity, EL, DOF, LERProcess Stability: PCD, PED, Bake Time/Temp., CD Uniformity, Defect Control

QC/Manufacturing Establishment

Quality Control: Metrology, Resist SpecificationScale-up: Manufacturing Flow

Fundamental Evaluation (Contamination Study), Components Research, Resist Process Establishment

Resist Development Program

Cover Material Development Program

Key Research and Development

Proof of Concept of Cover Material

TSP-SeriesProcess Stability: PCD, PED, Bake Time/Temp., CD Uniformity


Process Stability: PCD, PED, Bake Time/Temp., CD Uniformity, Defect Control

ScaleScale--up Stageup Stage

C/N 0610309259


Summary

• TOK has currently investigated both (non) cover material concepts

• Several resist screening methods for immersion lithography have been established and are ready for the evaluations with full field scanning tools

• The contamination from resist to fluid in immersion was calculated to be a small impact to the change of water refractive index, however;

further data collection during exposure and the investigation of long term impact to lens are necessary


Acknowledgments

TOK will like to thank the Resist Task Force organized by International SEMATECH for their kind support

We will also like to thank tool companies for all expertise discussions

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