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Newly Developed Low-Transmission-Loss Multilayer Materials for PWBs Applied to High GHz Bands
Newly Developed LowNewly Developed Low--TransmissionTransmission--Loss Multilayer Loss Multilayer Materials for Materials for PWBsPWBs Applied to High GHz BandsApplied to High GHz Bands
HikariHikari MuraiMurai, , YasuyukiYasuyuki Mizuno, Hiroshi Shimizu, Mizuno, Hiroshi Shimizu, Makoto (Makoto (MakMak) Kato and Kenichi (Ken) Ikeda) Kato and Kenichi (Ken) Ikeda
Tsukuba Research LaboratoryTsukuba Research LaboratoryTelecommunication Materials Development CenterTelecommunication Materials Development Center
Printed Wiring Board Materials R&D Dept. Printed Wiring Board Materials R&D Dept. Printed Wiring Board Materials Div.Printed Wiring Board Materials Div.
Hitachi Chemical Hitachi Chemical Co.,LtdCo.,Ltd..
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1. Requirement of material for high-frequency PWBs2. New low-transmission-loss multilayer materials 2.1 Development concept 2.2 Characteristics of new material2.3 Pb-free reliability and process ability2.4 Profile-free copper foil technology2.5 High-frequency performance of PWBs
3. Conclusions
Outline
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3Background ; Advanced Telecommunications
Sophisticated telecommunications Sophisticated telecommunications NetworksNetworks
High-speed transmission of large-volume data
Signals on PWBs Higher frequency• High-frequency device & module (PA, VCO, Filter)• Antenna & Processor of base transceiver station• Server, Router, Transport, etc
Router
Intelligent Transport System
/ GPS/ VICS/ ETC
Home Network
OA Network
LAN
Internet
Mobile Telecommunication
/ Mobile station/ Base transceiver station/ Network controller / Processing equipment/ Switching system
Server
Satellite Communication
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4Roadmap of Infrastructure-Communication Network
Servers Transmission Rate: 1.5Gbps⇒3Gbps Dk:4.0, Df:<0.010 LevelRouters 30Layers ⇒ 40 Layers Lead-Free applicable
Narrow Pitch, TH reliability, CAFSymmetrical Packaging
Reflow Temp: 260oCSuper Computers Transmission Rate: 5Gbps⇒10Gbps Dk:3.5, Df:<0.005 Level
High-End Giga bit Router 30Layers ⇒ 50 Layers Heat Resistance for Lead Free
Base Station:Back panel Reflow Temp: 260oC TH reliability, CAF
RF modules for Halogen Free Materials applied Dk:<3.7, Df:<0.007 LevelMobile Handset Devices Frequency: 1.5GHz ⇒ 3GHz High Thickness Accuracy(PA, Filter ,etc) 4Layers ⇒ 6Layers, Higher Density Laser drill process ability
Reflow Temp: 260oC Heat Resistance(Lead Free)
Halogen Free requirement Halogen free materialAntenna of Base Station Frequency: 1.5GHz ⇒ 3GHz Dk:<3.5, Df:<0.003 LevelPhase Shifters, From Teflon & PPE boards Lower Process CostAnti crash radar on to Lower Cost Materials Drift of electric property onautomotive and etc Frequency: 24GHz ⇒ 76GHz water absorption
GeneralHigh-
Frequency
Properties (Functions)Field Application Required Properties ofBase Materials
Low Dk, Low loss & High reliability (Heat resistance, TH reliability, CAF) with good process ability
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5Requirement of Material for High-Frequency PWBs
Stripline
Propagation delay time Td = Dkc
Characteristic impedance Zo =
wtb
60Dk
4b0.67p(0.8w + t)
In
Transmission loss( a ) = Conductor loss( ac ) + Dielectric loss( ad )
ad = 27.3 Dk Dffc
Dk : dielectric constant, Df : Dissipation factor, f : Frequency, c : Light velocity
b : Dielectric layer thicknessw : Conductor widtht : Conductor thickness
Important issue in high-frequency circuits Reducing transmission loss
/ Reduction of ad Low Dk & Df Resin Technology(Excellent dielectric properties & Stable Dk &Df againstfrequency, temperature, humidity, …..)
/ Reduction of ac Original Profile-Free Conductor(High adhesion technology for very low surface roughness foil)
< Solution to Requirement >
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Low Dk & Low DfThermosetting resin system
(Low-polar cross-linking design)
Non-polar & Rigid Liner polymer
Semi-IPN structure resinby Original polymer alloy technologyStable Dk & Df
vs. Temperature & Humidity Low Df Inorganic filler
Filler/Resin Interface Control
Low Dk / Low Df
Low water absorption
High Tg
High heat resistanceLow water absorption
Low Dk / Low Df
Good insulation reliabilityLow DfLow CTE
Novel high performance materialNovel high performance material
< Structure model of cured new resin >< Structure model of cured new resin >Non-polar & Rigid
Linear polymer
High heat resistance
Low Dk & Low DfThermosetting resin
High Tg & High strengthHardener
Low Df Inorganic filler
Development Concept of New Resin System
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7Filler/Resin-Composite Technology(1)
Matrix resin
Aggregation
InorganicFiller
/ Increase in water absorption/ Poor heat resistance/ Poor electric insulation
and CAF restraining property
Interface Control between Filler and Resin (FICS)
Optimization of filler / resin-interfaceHigh Dispersion & Good adhesion
/ Low water absorption/ Excellent heat resistance/ Excellent electric insulationand CAF restraining property
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8Filler/Resin-Composite Technology(2)
0.0025
0.0030
0.0035
0.0040
0.0045
0.0050
0.30 0.35 0.40 0.45 0.50Water Abshorption
(mass%,after PCT-5h)
Df(1
GH
z, a
fter P
CT-
5h)
Df of the cured resin after PCT
Untreated
Optimally treated
Effect by Optimal Interface Control on Df of the Cured Resin
Good dispersion & adhesion
Filler
< Cross section of cured resin >
Water absorption (%, after PCT-5 h)
Df(
1 G
Hz)
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9General Properties of New Material
* IPC-TM-650 2.5.5.9: Capacitance method with RF Impedance/Material Analyzer (25 oC)** JPCA-TM001 A test method for copper-clad laminates for printed wiring boards dielectric constanat and dissipation factor. IPC-TM-650 2.5.5.5.1: Triplate-line resonator method with Network Analyzer (25 oC)*** Moisture treatment condition: PCT (121oC/0.22 MPa)**** TH/TH wall thickness: 0.3 mm, Condition: 85oC/85%RH, 100 V dc applied
Item Condition Unit New laminate PTFE/E-Glasssubstrate
ConventionalFR-4
Dielectric Constant (Dk) 1 GHz* - 3.50 - 3.55 2.65 - 2.70 4.10 - 4.201 GHz** - 3.40 - 3.45 2.60 - 2.65 4.00 - 4.103 GHz** - 3.40 - 3.45 2.60 - 2.65 3.95 - 4.05
Dissipation factor (Df) 1 GHz* - 0.0014 - 0.0018 0.0005 - 0.0010 0.0160 - 0.01801 GHz** - 0.0024 - 0.0028 0.0024 - 0.0028 0.0180 - 0.02003 GHz** - 0.0034 - 0.0038 0.0030 - 0.0034 0.0200 - 0.0220
Copper peel strength (18 μm) Standard (Rz: 5-7 μm) 0.7 - 0.9 1.3 - 1.4 1.4 - 1.6VLP (Rz: 3-4 μm) kN/m 0.6 - 0.7 - -
PF (Rz: 1 μm) 0.7 - 0.8 - -Glass transition temperature (Tg) TMA oC 175 - 185 20 - 25 120 - 130CTE xy 14 - 15 17 14 - 17
z1 ppm/oC 48 - 55 100 - 110 50 - 70z2 100 - 130 290 - 320 240 - 310
Heat resistance (T-288) IPC-TM-650 2.4.24.1 min > 60 - < 3Heat resistance PCT***-3 h - Good Good NG(288 oC/20 s dipping) PCT***-5 h - Good Good NGWater absorption PCT***-5 h % 0.20 - 0.30 0.01 - 0.02 1.0 - 1.2CAF restraining property**** - h > 1000 - > 1000Flammability UL-94 - V-0 V-0 V-0
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10Feature concerning Dk & Df of new material
0
0.005
0.010
0.015
0.020
0.025
50 55 60 65 70 75 80 85 90
Resin Content(vol%)
Df(1
GH
z)
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
50 55 60 65 70 75 80 85 90
Resin Content(vol%)
Dk(
1GH
z)
Relationship between Dk&Df and resin content of laminates< Measurement Conditions >/ Method:Triplate-Line Resonator by Vector Network Analyzer (JPCA tm001/IPC-TM-650_2.5.5.5.1)/ Temperature & Humidity:25 ℃/ 60%RH/ Laminate Thickness:1.6mm(Signal/Ground: 800μm apart), Copper foil:18μm/ Signal Conductor Line Width:1mm(Zo: ca. 50Ω)
Current Low DkNew Laminate
Conventional FR-4
Low Dk Epoxy
Current Low Dk
New Laminate
Conventional FR-4
Low Dk Epoxy
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< Measurement Conditions >/ Method:Triplate-Line Resonator by Vector Network Analyzer/JPCA TM001/IPC-TM-650_2.5.5.5.1/ Temperature & Humidity: 25 oC/ 60 %RH/ Laminate Thickness: 0.8 mm(Signal-Ground Distance: 0.8 mm), Copper foil:18 μm/ Signal Conductor Line Width: 1 mm
Dielectric Properties (vs. Frequency)
2.5
3.0
3.5
4.0
4.5
0 2 4 6 8 10Frequency (GHz)
Dk
Conventional FR-4
New laminate
PTFE/E-glass
0
0.005
0.010
0.015
0.020
0.025
0 2 4 6 8 10
Frequency (GHz)
Df
Conventional FR-4
New laminate
PTFE/E-glass
Good stability of dielectric properties in wide frequency bands
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0
0.005
0.010
0.015
0.020
0.025
0.030
0 1 2 3 4 5
PCT-Treating Time (h)
Df (
1 G
Hz)
3.03.23.43.63.84.04.24.44.64.85.0
0 1 2 3 4 5
PCT-Treating Time (h)
Dk
(1 G
Hz)
Dielectric Properties (vs. Moisture Absorption)
Conventional FR-4
New laminate
Conventional FR-4
New laminate
Stable Dk & Df against PCT treatment compared with FR-4
< Measurement Conditions >/ Method:Triplate-Line Resonator by Vector Network Analyzer/JPCA TM001/IPC-TM-650 2.5.5.5.1/ Moisture treatment condition: PCT(121oC/0.22 MPa)-1~5 h/ Temperature : 25 oC/ Laminate Thickness: 1.6 mm(Signal-Ground Distance: 0.8 mm), Copper foil:18 μm/ Signal Conductor Line Width: 1 mm
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0
0.005
0.010
0.015
0.020
0.025
0.030
-40 -20 0 20 40 60 80 100
Temperature (℃)
Df (
1 G
Hz)
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
-40 -20 0 20 40 60 80 100
Temperature (℃)
Dk
(1 G
Hz)
Dielectric Properties (vs. Temperature)
New laminate
Conventional FR-4 Conventional FR-4
New laminate
Good stability of dielectric properties against temperature
< Measurement Conditions >/ Method:Triplate-Line Resonator by Vector Network Analyzer/JPCA TM001/IPC-TM-650 2.5.5.5.1/ Temperature: -30~90oC/ Laminate Thickness: 1.6 mm(Signal-Ground Distance: 0.8 mm), Copper foil:18 μm/ Signal Conductor Line Width: 1 mm
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0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 200 400 600 800 1000 1200
Treatment Time (h)W
ater
Abs
orpt
ion
(%)
0
0.2
0.4
0.6
0.8
1.0
1.2
0 1 2 3 4 5 6
Treatment Time (h)
Wat
er A
bsor
ptio
n (%
)Water Absorption
PCT(121oC/ 0.22 MPa)PCT(121oC/ 0.22 MPa) 85oC/ 85%RH85oC/ 85%RH
(t0.8 mm) (t0.8 mm)
New laminate
Conventional FR-4 Conventional FR-4
New laminate
Superior low moisture absorption (Water absorption is a quarter of the values of FR-4)
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0
100
200
300
400
500
600
Flex
ural
Stre
ngth
(MPa
)0
5
10
15
20
25
Flex
ural
Mod
ulus
(GP
a)Mechanical Properties
Flexural ModulusFlexural Modulus Flexural StrengthFlexural Strength
25oC 200oC
Newlaminate
PTFE/E-glass
ConventionalFR-4
Newlaminate
PTFE/E-glass
ConventionalFR-4
Flexural modulus of new laminate is higher than that of PTFE laminate( Warpage during the PCB manufacturing can be decreased. )
25oC 200oC
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(Treating Condition: 85oC/85%RH, 100 V)
85oC/85%RH, 100 V t0.8 mm (Cu: 18 μm)
Diameter: 0.4mm
TH/TH distance: 0.3 mm
◆◆
◆◆
Insulation Reliability : Results of CAF evaluation
1.0E+06
1.0E+08
1.0E+10
1.0E+12
1.0E+14
1.0E+16
0 200 400 600 800 1000 1200
Treating time (h)
Insu
latio
n re
sist
ance
(ohm
)
Conventional FR-4
New laminate
Good CAF restraining property
< Conditions >
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-10
0
10
20
30
40
50
60
70
80
0 200 400 600 800 1000
Number of cycle
Cha
nge
ratio
of e
lect
ric re
sist
ance
(%
)
TH/TH distance:0.3mm
/ Laminate: t3.0mm/18D (Plated Cu: 20 μm)
/ Test pattern: Daisy-Chain(320-Holes)
/ Pre-treatment:E-3/130 C-192/30/60
260oCmax reflow, 3cycle/ Test condition:
-65oC/30min 125oC/30min
Diameter: φ0.4mm
< Condition >
Thickness: 3.0mm
New laminate
High-Tg FR-4
TH/TH distance: 0.3 mm
The connection reliability of through-hole: Results of thermal shock test
Good through-hole connection reliability
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Layer counts : 28 layer boardTotal thickness : 4.1mm
Precondition:E-0.5/110 C-24/85/85%RH
Pb-free Reflow255degC X 6 times
No blister & No delaminationobserved
Dia.0.25mm Dia.0.30mm
Pb-free Heat resistance of high layer count
After reflow 255degC 10sec x 6 times
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Item New laminate High-Tg FR-4
Reflow*,×3Times OK OK
×6Times OK OK
×9Times OK Crack
OK Crack
288oCFloat ×10 s(after Reflow ×3)
288oCFloat/300s(after Reflow ×3)
Pb-free Heat Resistance of Sequential Lamination
< TEG Structure >
* Reflow condition: Max 250oC
< Evaluation Result >
SA: 8Layer (IVH)
SA: 8Layer (IVH)P/P X 3ply
Layer counts: 16 (8+8)Thickness: 4.2 mmInner copper: noneIVH Diameter: 0.4 mmIVH Pitch: 0.3 mmIVH-Plugging Ink: THP-100DX1IVH-Cu thickness: 15 μm
New laminate High-Tg FR-4
Crack
Item
After Reflow 3 Times
Reflow 3 Times +
288oC Float 300 s
< Cross section photograph >
New laminate
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20IST result after Pb-free
Layer counts : 24 layers PCB thickness : 3.1 mmTest temp.: 150oC +/- 3oC in 3 minutesCriteria of failure: more than 10% change of resistance
Drill hole size Pre-conditioning Cycles
0.010” AS IS > 1,000
4X (260oC) > 1,000
6X (260oC) > 1,000
0.0135” AS IS > 1,000
4X (260oC) > 1,000
6X (260oC) > 1,000n = 6pnl
Good through-hole connection reliability
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Table1. Example for drilling conditionDiameter of drill bits
ItemØ0.25mm Ø0.6mm
Thickness 4.4mm (16 Layers)MCV L188B UV J293BDrill bits
(Union tool) Point angle 130º, Helix angle 45º, Undercut typeEntry board LE-400 (Aluminum: 100um, resin:100um)
Stacked panel 1 boardRevolution number 100,000 rpm 60,000 rpm
Feed rate1.0m/min.10µm/rev
1.05m/min.17.5µm/rev
Life of drill bits about 1,000 hits
dia. 0.25mm dia. 0.6mm
There is no smear.
Drilling process ability
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1. Desmear conditions
Prscess Chemicals Temp. (oC)
Time (min.)
SwellingMLB conditioner 211
80 5
EtchingMLB promoter 213
80 10
Neutrali-zation
MLB neutralizer 216-2
RT 5
Thickness: t0.8 Size: 50mm X 50mm without coppper, n=5
New Laminate has a high desmear rate compared with High-Tg FR-4. Possible to reduce its desmear process time in comparison with that of High Tg FR-4
0
0.20
0.40
0.60
0.80
1.00
1.20
1.40
FX-II High-Tg FR-4
Wei
ght c
hang
e (m
g/cm
2) 1 time2 time3 time
Desmear rate
New Laminate
2. Sample
High Tg FR-4
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23Profile-free Copper Foil
Standard Cu Foil Low profile Cu Foil Profile-free Cu FoilRz = 8.0 μm Rz = 3.0 μm Rz = 1.2 μm
Current Cu Foils need roughening treatment on its surface for keeping enough peel strength.
5.0um5.0um5.0um
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24Adhesive Property
Base material : Filled high Tg
Rz:7-8μm
Rz:2.7-3.3μm
Rz:1.1-1.5μm
StandardCu Foil
Peel
Str
engt
h (k
N/m
)
0.6
1.2
1.0
0.8
0.4
0.2
0
Rz:1.1-1.5μm
Low profileCu Foil
Profile-freeCu Foil itself
Newly DevelopedProfile-free Cu Foil
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Standard Cu Foil Low Profile Cu Foil Profile-free Cu Foil
Ferric chloride etchant
Top
Bottom
EtchingConveyer Speed 1.0 x1.2 x 1.4Improvement in the speed of an etching line is possible with profile-free Cu foil.
L/S:30/30μm 18μm Cu Foil
Circuit Formation
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26Evaluation Technology(High-Frequency Performance of PWBs)
●
●
< Contents of Evaluation >(1) Propagation delay time (2) Transmission Loss (3) Eye Pattern Diagram
< Specifications of Testing Board >/ Size: 510 mm X 510 mm/ Layer Count: 8 Layers/ Line Structure: Strip-line/ Dimension Parameters
Line-Width: 0.06 ~ 0.184 mmDielectric Thickness(G/G): 0.16 ~ 0.40 mmConductor Thickness: 12, 18, 35, 70 μmLine-Length: 500 mm
/ Connector: SMA(φ3.5 mm)/ Connection(SMA/TH): Solder joint
Layer structure
Core
PrepregGround(G)
Ground(G)
Ground(G)
Ground(G)Signal Line(S-a)
Signal Line(S-b)
Signal Line(S-a, 500 mm)SMA Connector
Line Layout
●
●
Signal Line(S-b,500 mm)
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5.8
6.0
6.2
6.4
6.6
6.8
7.0
7.2
7.4
0 1 2 3 4 5 6
伝搬
遅延
時間
(ns/
m)
周波数(GHz)
Propagation delay time
< Measurement Conditions >/ Characteristic Impedance: 50 Ω/ Temperature & Humidity: 25oC/60%RH/ Inner Layer Surface Treatment:
Reduction Treatment
< Evaluation System >
V-NA
Testing Board
wb t
/ Line-Width(w): 0.124 mm (FR-4: 0.11 mm)/ Dielectric Thickness(b): 0.26 mm/ Copper Thickness(t): 18 μm
< Dimensional Parameters >
New laminate
Conventional FR-4
Frequency
Pro
paga
tion
dela
y tim
e (n
s/m
)
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-40
-35
-30
-25
-20
-15
-10
-5
00 1 2 3 4 5 6
Frequency (GHz)
Tran
smis
sion
loss
(dB
/m)
Transmission Loss(S-Parameter(S21))
wb t
/ Line-Width(w): 0.124 - 0.138 mm/ Dielectric Thickness(b): 0.26 mm/ Copper Thickness(t): 18 μm
< Dimensional Parameters >
< Evaluation System >
V-NA
Testing BoardConventional FR-4
New laminate(VLP foil)
New laminate(Profile-free foil)
< Measurement Conditions >/ Characteristic Impedance: 50 Ω/ Temperature & Humidity: 25oC/60%RH/ Inner Layer Surface Treatment:
Reduction Treatment
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< Measurement Conditions >/ Evaluation PWB: Strip-Line Structure/ Input Pulse(Bit rate): 5 Gbps/ Temperature & Humidity: 25oC/60%RH/ Characteristic Impedance: 50 Ω/ Connection: Though Hole-SMA (by Solder)/ Inner Layer Surface Treatment: Reduction Treatment
< Evaluation System >
wb t
/ Line-Width(w): 0.114~0.144 mm/ Dielectric Thickness(b): 0.26 mm/ Copper Thickness(t): 18 μm/ Line-Length: 500 mm
Testing Board
Pulse Generator
Oscilloscope
< Dimension Parameters >
New laminate (VLP) New laminate (Profile-free)
Conventional FR-4
50ps/div 100mV/div
50ps/div 100mV/div 50ps/div 100mV/div
Eye Pattern Diagrams
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Df(1
GH
z)Dk(1GHz)
0.0020
0.0040
0.0060
0.0080
0.0100
0.0120
0.0140
0.0160
0.0180
0.0200
0.0220
0.0240
04.4 4.3 4.2 4.1 4.0 3.9 3.8 3.7 3.6 3.5 3.4 3.3 3.2 3.1 3.0 2.9 2.8
Standard FR4
High Tg FR-4
Filled High Tg
Teflon GradeNew Laminate
※ JPCA TM001/IPC TM650 2.5.5.5.1/IEC61189-2-720(TBD)
Property map of high frequency materials
Under Development
HighHigh--End GradeEnd GradeDkDk 3.7 / 3.7 / DfDf 0.0070.007JPCAJPCA--HCL01/21HCL01/21IEC 61249IEC 61249--22--32/3432/34
MiddleMiddle--Range GradeRange GradeDkDk 4.1 / 4.1 / DfDf 0.0170.017JPCAJPCA--HCL02/22HCL02/22IEC 61249IEC 61249--22--31/3331/33
Halogen-free Middle
Halogen-free High-end
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31Conclusions
(1) We have developed the filler dispersion technology and the resinwhose dielectric properties and heat resistance are excellent. The laminate with these technologies showed almost the same level of low dissipation factor (Df) as the PTFE laminate at high frequency signal (3GHz).
(2) The laminate also showed the excellent properties such as low moisture absorption, high CAF resistance and high Tg enough to obtain the heat resistance for lead-free soldering process.
(3) The newly developed laminate is suitable for application in the PWBs for various high speed and high frequency uses, such as high-end server, router, measuring equipment, super computer, RF module and antenna.
Note: The contents of this report are based on the results of experiments and do not represent a guarantee of the values for each property.