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1. Thin-film integrated circuit refers to film thickness of approximately 1um.2. Classifications of ICs according to functions include linear, digital and microwave. Which of

these classes greatl relies on h!rid technolog"Microwave ICs3. The term #monolithic$ is derived from the %reek words monos and lithos which res&ectivel

mean single and stone (single stone)'. (evices or com&onents such as transistors and diodes are mostl fa!ricated in ICs !

diffusion). In most &lanar ICs, what do ou call the laer that &rotects the surface of the chi& from

e*ternal contaminants" Oxide layer+. Which comes first in the &lanar &rocess of fa!ricating ICs" Crystal growth. techniue used for o!taining a relativel large single crstal from a semiconductor

material. the &rocess consists essentiall of di&&ing a tin seed crstal into a cruci!le of

molten mass of the same su!stance and then slowl withdrawing it while rotating. Czochralsi

method./. In IC fa!rications, the su!strate is usuall &roduced ! Czochralsi process.0. The &rocess used to grow a laer of single-crstal semiconductor as an e*tension of the

e*isting crstal wafer of the same material. epitaxial1. In fa!ricating ICs using &lanar technolog, what is the !asic method of adding im&urities"

!iffusion11. The introduction of im&urities into a semiconductor inside a hot furnace during IC

fa!rication. !iffusion12. method of introducing im&urities in IC fa!rication wherein the a&&ro&riate ions are carried

! an accelerating !eam. Ion"implantation13. Which method of do&ing that is used in &roducing narrow regions in an IC" Ion"implantation1'. T&e of diffusion in which the im&urit concentration at the semiconductor surface is

maintained at a constant level throughout the diffusion ccle. Constant"source diffusion1). n alternative method rather than diffusion in introducing im&urities into a semiconductor

wherein the im&urities are made to &enetrate into the wafer ! an ion !eam. Ion"implantation.1+. method of &roducing integrated circuit ! &hotogra&hing a &attern of the circuit on a

suita!le light-sensitied surface of semicon-ductor and chemicall etching awa unwanted

&ortions of the surface. #hotolithographic process.1. In IC fa!rication, the &hoto-sensitive emulsion coated at the wafer surface to !e masked is

calledphotoresist1/. The removal of unmasked ilicon (io*ide 4i526at the wafer surface in IC fa!rication etching10. The removal of the remaining &hotoresist in the wafer after etching during IC fa!rication.

$tripping.

2. Covering or coating on a semiconductor surface to &rovide a masked area for selective etchingor de&ositionmasing

21. In most IC fa!rications, how is the connection &attern !etween com&onents defined" %y masing22. What do ou call the &rocess of interconnecting the com&onents in an IC during fa!rication"

Metallization23. The conducting material that is mostl used to interconnect com&onents on chi&s during

metalliation &rocess.&luminum2'. Is the &rocess of making the semiconductor chi& or wafer insensitive to an contaminations

that might cause drift of &arameter or &remature failure. #assivation2). 7assivation of semiconductor wafer ! forming a laer of an insulating o*ide on the surface

oxide passivation2+. In monolithic ICs, electrical isolation !etween devices on the same su!strate is achieved !

fa!ricating them in an electricall isolated region known as isolation pocets or tu's.2. Which of the isolation techniues in IC fa!rication that is commonl used" unction isolation

2/. Isolation of devices in integrated circuit ! forming a silicon o*ide laer around eachdevices is known as o*ide insulation, and this is a good e*am&le of dielectric isolation

20. n o&erational am&lifier must have at least how man usa!le terminals" 1 terminals3. What t&e of am&lifier commonl used at the out&ut stage of o&-am&s" Complementary amplifier31. the transistor configuration used at the out&ut com&lementar stage of most o&-am&s common"

collector32. the stage followed ! the out&ut com&lementar in o&-am&s functional !lock diagram level

shifter33. what is the &ur&ose of a level shifter in o&-am&s" *o set and+or ad,ust the output voltage to

zero when input signal is zero.3'. 7rimaril, o&-am&s are o&erated with !i&olar &ower su&&l, however, we can also use single

&olarit &ower su&&l ! generating a reference voltage to ground.3). Calculate the C899 of an o&-am& having a common-mode gain of 1 and a differential-mode gain

of 1,. -


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3+. The non-inverting and inverting in&uts of an o&-am& have an in&ut voltage of 1.)m: and 1.m:,

res&ectivel. If the o&-am& has a common-mode voltage gain of 1 and a differential mode gain

of 1, what is its out&ut voltage" /.10/3. What is the ma*imum out&ut voltage swing of an o&-am&" 2sat to 3sat3/. The u'1 o&-am& has a C899 of 0d; and a differential-mode gain voltage am&lification of

2,. What is the o&-am&


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+0. T&ical value of the e*ternal freuenc-com&ensating ca&acitor of o&-am&s. 5."5 u7. The magnitude of the o&-am&s in&ut offset voltage !efore it can !e classified as a low-in&ut

offset voltage o&-am&. .0m.1. 5&-am&s whose internal transistor !iasing can !e controlled e*ternall are categoried as

programma'le"op"amps2. The most &o&ular o&-am& &ackages are the metal can, /-&in (I7, and the 8T. Which of these

corres&onds to T5-00"Metal can3. (ual-in-line or (IA &ackage is designated as *O"114'. ?or high-densit ICs, involving man o&-am&s, what &ackaging is most suita!le" $M*). reactive device used in controlling electrical &ower ! using two windings on a common iron

core. The control winding is su&&lied with small dc-current which causes the reactance of alarge ac-winding to change accordingl. $atura'le reactor

+. a satura!le reactor with regenerative feed!ack.Magnetic amplifier. an electronic switch that has the highest single-device current ca&acit and can withstand

overloads !etter. ignitrons/. which &ower control switching method that greatl generates 9?I or E8I and is therefore

limited to low-freuenc a&&lications" #hase"control0. a converter that changes ac-voltage freuenc from one to another. Cycloconverter/. in electronic converters, what signal is mostl used to trigger the active device" $6uare

wave/1. which of the trigger diodes has the highest-holding voltage" %idirectional"trigger diac/2. general term of electronic devices used to control or trigger large-&ower switching devices.

%rea"over devices/3. a !reak-over device that is !asicall a diode. *rigger diode/'. the voltage decreased across the node 46 and cathode 4B6 of an C9 from non-conducting

state to conducting state. %rea'ac voltage./). n C9 rated 1 is used in the controlling switch in a circuit &owered ! ) :dc. When the

C9 fires 5, its node 46 to Cathode 4B6 voltage was o!served to !e 2:. Calculate the

!reak!ack voltage of the C9.

/+. Dse of heat sinks, forced air, and water cooling are e*am&les of e*ternal cooling in C9s and

other devices. Which of these is the onl recommended to !e used for the largest &ower

dissi&ating device"=ater cooling/. In connecting two C9s in series, during #5??$ state, the voltage source must !e &ro&erl

shared !etween them, !ut due to devices< differences, there might !e uneual voltages across

each C9. >ow do we eualie these voltages" %y using a 'locing"e6ualizing resistor//. circuit used for voltage eualiation during 5-5?? switching action of C9s in series.

$nu''er circuit/0. in controlling electrical &ower using &hase control method with C9@triac !eing the active

device, what do we call the &eriod of the ccle !efore the device switches to conduction"7iring delay angle

0. how man times &er second does an C9 is turned 5 and 5?? when it is o&erated in a full-wave

&hase control at a line freuenc of + >" 10 times (7=)01. a three terminal device that !ehaves roughl like C9s, e*ce&t that it can conduct current in

either direction when at 5. $%$02. a thristor that is ver similar to an C9 e*ce&t that it has a low voltage and current

ratings. It is ver tem&erature sta!le, and is therefore suita!le to !e used as a triggering

device. $9$03. silicon unilateral switches 4D6, generall have a !reakover voltage of /:, however, this

value can !e altered ! normall connecting a ener diode. >ow is the diode installed"

!iode>s cathode to $9$>s gate and diode>s anode to $9$>s cathode0'. a silicon unilateral switch 4D6 has a forward !reakover voltage of /:. a ener diode is

connected !etween its gate and cathode terminals with the diode


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133. in TTA ICs with more than one gates availa!le, sometimes not all gates are used. >ow

will ou handle these unused gates" 7orce the output to go ;IF;13'. how will ou handle unused in&uts in a logic gate@logic IC" #ull them up or down

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