precision grinding of polycrystalline diamond scribing wheel...
TRANSCRIPT
Precision grinding of polycrystalline diamond scribing wheel for scribing and breaking of monocrystalline wafers
Yusuke Akiyama 1, Mutsumi Okada 1, Hirofumi Suzuki 1, a *, Toshio Fukunishi 2 Yoshiyuki Asai 2, and Kazuma Iizawa 2
1Chubu University, 1200, Matsumoto, Kasugai, Aichi, 487-8501 Japan 2Mitsuboshi Diamond Industrial Co. Ltd., 32-12, Kohroen, Settsu, Osaka, 566-0034 Japan
Keywords: Polycrystalline diamond, Scribing wheel, Constant pressure grinding, Diamond wheel, Scribing and breaking
Abstract. The scribing and breaking process, performed using a scribing wheel made of polycrystalline diamonds (PCD), have been widely employed in the cutting of glass plates for windows, liquid crystal displays, and smartphones. The scribing process under focus herein concerns efficient cutting of semiconductor wafers, such as SiC. To this end, techniques for grinding and polishing of PCD scribing wheels have been developed through experiments and corresponding grinding conditions have been optimized. During experiments, scribing/breaking of monocrystalline wafers was performed, using ground PCD wheels, and subsequently, effects of the wheel shape on the performance characteristics of the scribing/breaking process were evaluated.
1. Introduction
Glass plates, traditionally employed in the manufacturing of window panes, are usually cut via a process known as scribing (scratching) by means of a monocrystalline diamond stylus followed by breaking via application of bending stresses. This is made possible by the high clarity of the cutting surface and the correspondingly high cutting efficiency. Recently, scribing and breaking processes have found applications in the cutting of glass plates used in the manufacture of liquid crystal displays (LCD), plasma displays, and tempered cover glasses for smartphone displays. Highly precise and efficient cutting of large-sized glass plates could be facilitated by developing high precision CNC scribing and breaking machines [1].
Furthermore, the need for precision cutting of large and thin monocrystalline wafers has been rapidly increasing in recent years. Anisotropic and ductile Si crystals are used as semiconductors in the manufacture of integrate circuits (ICs), large scale ICs (LSI) and solar panels. Super-hard sapphire glass (monocrystalline Al2O3) is employed in the design of for light emitting diodes (LEDs) while super hard and brittle monocrystalline SiC is used in the construction of power devices for automobiles and other high-power electric devices. Wafers of these materials are cut via the dicing process by a diamond blade (thin wheel) or laser-cutting techniques.
However, there exist some problems in the conventional dicing and laser-cutting process. In the dicing process employing diamond blades as depicted in Fig. 1, the grinding efficiency is very low, and the kerf loss due to blade thickness is excessive. In addition a residual stress layer is produced by grinding heat, and additional washing and drying processes become indispensable [2, 3]. During the laser-based cutting process, substrate materials are vaporized by the high-power laser beam, as depicted in Fig. 2. The attendant thermal damage causes generation of residual stresses and the kerf loss caused by width of the laser beam is also excessive [4][5].
The proposed study focusses on the scribing process performed by means of a scribing wheel in order to overcome the aforementioned problems. During experiments, the proposed scribing process was employed in the cutting of monocrystalline wafers. Polycrystadiamond (PCD) scribing wheels with optimum cuttingground in trial with a diamond wheel, and the influence of grinding conditions and ground-on a monocrystalline SiC wafer using the ground PCD tool, and its performance was evaluated [6]. Figure 1. Schematic of dicing process
2. Scribing and breaking process
Fig. 3 depicts a schematic of the scribing and breaking process. During scribing, the substrate is scratched by means of a rotating scribing wheel. In this process, the "scratch" is formed via application of a load onto the substrate surface in contact witcleaving process, the initially generated scratch progresses deep into the substrate structure under a bending stress, and the substrate is, therefore, cleaved [7Scribing wheels, performed in this study. PCD comprises diamond abrasives sintered in the presence of alloy metals, such as cobalt. It is difficult to process, and compared to singlepresents great difficulty to process difficulty when reducing its surface roughness and improving edge accuracy [10]. It is considered that the chipping ratio, edge accuracy and surface roughness on ground scribing wheels greatly influence the scribin
Substrate
Coolant
Scratch
The proposed study focusses on the scribing process performed by means of a scribing wheel in order to overcome the aforementioned problems. During experiments, the proposed scribing process was employed in the cutting of monocrystalline wafers. Polycrystadiamond (PCD) scribing wheels with optimum cuttingground in trial with a diamond wheel, and the influence of grinding conditions and
-wheel characteristics was evaluated. Furthermore, the scribing process wason a monocrystalline SiC wafer using the ground PCD tool, and its performance was evaluated
Figure 1. Schematic of dicing processemploying a diamond blade
2. Scribing and breaking processFig. 3 depicts a schematic of the scribing and breaking process. During scribing, the
substrate is scratched by means of a rotating scribing wheel. In this process, the "scratch" is formed via application of a load onto the substrate surface in contact witcleaving process, the initially generated scratch progresses deep into the substrate structure under a bending stress, and the substrate is, therefore, cleaved [7Scribing wheels, exclusively made of PCD, as shown in Fig. 4, were used in the experiments performed in this study. PCD comprises diamond abrasives sintered in the presence of alloy metals, such as cobalt. It is difficult to process, and compared to singlepresents great difficulty to process difficulty when reducing its surface roughness and improving edge accuracy [10]. It is considered that the chipping ratio, edge accuracy and surface roughness on ground scribing wheels greatly influence the scribin
Figure 4. Schematic and pictorial representation of PCD scribing wheel
Substrate
Dicing blade
Coolant
Substrate
Scratch
The proposed study focusses on the scribing process performed by means of a scribing wheel in order to overcome the aforementioned problems. During experiments, the proposed scribing process was employed in the cutting of monocrystalline wafers. Polycrystadiamond (PCD) scribing wheels with optimum cuttingground in trial with a diamond wheel, and the influence of grinding conditions and
wheel characteristics was evaluated. Furthermore, the scribing process wason a monocrystalline SiC wafer using the ground PCD tool, and its performance was evaluated
Figure 1. Schematic of dicing processemploying a diamond blade
Figure 3. Schematic of scribing and breaking process
2. Scribing and breaking processFig. 3 depicts a schematic of the scribing and breaking process. During scribing, the
substrate is scratched by means of a rotating scribing wheel. In this process, the "scratch" is formed via application of a load onto the substrate surface in contact witcleaving process, the initially generated scratch progresses deep into the substrate structure under a bending stress, and the substrate is, therefore, cleaved [7
exclusively made of PCD, as shown in Fig. 4, were used in the experiments performed in this study. PCD comprises diamond abrasives sintered in the presence of alloy metals, such as cobalt. It is difficult to process, and compared to singlepresents great difficulty to process difficulty when reducing its surface roughness and improving edge accuracy [10]. It is considered that the chipping ratio, edge accuracy and surface roughness on ground scribing wheels greatly influence the scribin
Figure 4. Schematic and pictorial representation of PCD scribing wheel
Dicing blade
Residual stress
(a) Scribing
100°
Φ0.8
The proposed study focusses on the scribing process performed by means of a scribing wheel in order to overcome the aforementioned problems. During experiments, the proposed scribing process was employed in the cutting of monocrystalline wafers. Polycrystadiamond (PCD) scribing wheels with optimum cuttingground in trial with a diamond wheel, and the influence of grinding conditions and
wheel characteristics was evaluated. Furthermore, the scribing process wason a monocrystalline SiC wafer using the ground PCD tool, and its performance was evaluated
Figure 1. Schematic of dicing process employing a diamond blade
Figure 3. Schematic of scribing and breaking process
2. Scribing and breaking process Fig. 3 depicts a schematic of the scribing and breaking process. During scribing, the
substrate is scratched by means of a rotating scribing wheel. In this process, the "scratch" is formed via application of a load onto the substrate surface in contact witcleaving process, the initially generated scratch progresses deep into the substrate structure under a bending stress, and the substrate is, therefore, cleaved [7
exclusively made of PCD, as shown in Fig. 4, were used in the experiments performed in this study. PCD comprises diamond abrasives sintered in the presence of alloy metals, such as cobalt. It is difficult to process, and compared to singlepresents great difficulty to process difficulty when reducing its surface roughness and improving edge accuracy [10]. It is considered that the chipping ratio, edge accuracy and surface roughness on ground scribing wheels greatly influence the scribin
Figure 4. Schematic and pictorial representation of PCD scribing wheel
Kerf loss
Residual stress
Bond
Substrate
(a) Scribing
Scribing Wheel
Φ2
0.65 mm
The proposed study focusses on the scribing process performed by means of a scribing wheel in order to overcome the aforementioned problems. During experiments, the proposed scribing process was employed in the cutting of monocrystalline wafers. Polycrystadiamond (PCD) scribing wheels with optimum cuttingground in trial with a diamond wheel, and the influence of grinding conditions and
wheel characteristics was evaluated. Furthermore, the scribing process wason a monocrystalline SiC wafer using the ground PCD tool, and its performance was evaluated
Figure 2.
Figure 3. Schematic of scribing and breaking process
Fig. 3 depicts a schematic of the scribing and breaking process. During scribing, the substrate is scratched by means of a rotating scribing wheel. In this process, the "scratch" is formed via application of a load onto the substrate surface in contact witcleaving process, the initially generated scratch progresses deep into the substrate structure under a bending stress, and the substrate is, therefore, cleaved [7
exclusively made of PCD, as shown in Fig. 4, were used in the experiments performed in this study. PCD comprises diamond abrasives sintered in the presence of alloy metals, such as cobalt. It is difficult to process, and compared to singlepresents great difficulty to process difficulty when reducing its surface roughness and improving edge accuracy [10]. It is considered that the chipping ratio, edge accuracy and surface roughness on ground scribing wheels greatly influence the scribin
Figure 4. Schematic and pictorial representation of PCD scribing wheel
loss
Diamond abrasive
Bond
Substrate
The proposed study focusses on the scribing process performed by means of a scribing wheel in order to overcome the aforementioned problems. During experiments, the proposed scribing process was employed in the cutting of monocrystalline wafers. Polycrystadiamond (PCD) scribing wheels with optimum cutting-edge some cutting edge radius were ground in trial with a diamond wheel, and the influence of grinding conditions and
wheel characteristics was evaluated. Furthermore, the scribing process wason a monocrystalline SiC wafer using the ground PCD tool, and its performance was evaluated
Figure 2. Schematic of laser employing high
Figure 3. Schematic of scribing and breaking process
Fig. 3 depicts a schematic of the scribing and breaking process. During scribing, the substrate is scratched by means of a rotating scribing wheel. In this process, the "scratch" is formed via application of a load onto the substrate surface in contact witcleaving process, the initially generated scratch progresses deep into the substrate structure under a bending stress, and the substrate is, therefore, cleaved [7
exclusively made of PCD, as shown in Fig. 4, were used in the experiments performed in this study. PCD comprises diamond abrasives sintered in the presence of alloy metals, such as cobalt. It is difficult to process, and compared to singlepresents great difficulty to process difficulty when reducing its surface roughness and improving edge accuracy [10]. It is considered that the chipping ratio, edge accuracy and surface roughness on ground scribing wheels greatly influence the scribin
Figure 4. Schematic and pictorial representation of PCD scribing wheel
Diamond
Substrate
Substrate
Scratch
(b) After scribing
5 mm
The proposed study focusses on the scribing process performed by means of a scribing wheel in order to overcome the aforementioned problems. During experiments, the proposed scribing process was employed in the cutting of monocrystalline wafers. Polycrysta
edge some cutting edge radius were ground in trial with a diamond wheel, and the influence of grinding conditions and
wheel characteristics was evaluated. Furthermore, the scribing process wason a monocrystalline SiC wafer using the ground PCD tool, and its performance was evaluated
Schematic of laseremploying high
Figure 3. Schematic of scribing and breaking process
Fig. 3 depicts a schematic of the scribing and breaking process. During scribing, the substrate is scratched by means of a rotating scribing wheel. In this process, the "scratch" is formed via application of a load onto the substrate surface in contact with the wheel. During the cleaving process, the initially generated scratch progresses deep into the substrate structure under a bending stress, and the substrate is, therefore, cleaved [7-9].
exclusively made of PCD, as shown in Fig. 4, were used in the experiments performed in this study. PCD comprises diamond abrasives sintered in the presence of alloy metals, such as cobalt. It is difficult to process, and compared to single-crystalline diampresents great difficulty to process difficulty when reducing its surface roughness and improving edge accuracy [10]. It is considered that the chipping ratio, edge accuracy and surface roughness on ground scribing wheels greatly influence the scribing performance.
Figure 4. Schematic and pictorial representation of PCD scribing wheel
Laser beam
Substrate
Residual
Substrate
Substrate
Scratch
After scribing
(c) Br
The proposed study focusses on the scribing process performed by means of a scribing wheel in order to overcome the aforementioned problems. During experiments, the proposed scribing process was employed in the cutting of monocrystalline wafers. Polycrysta
edge some cutting edge radius were ground in trial with a diamond wheel, and the influence of grinding conditions and
wheel characteristics was evaluated. Furthermore, the scribing process was performed on a monocrystalline SiC wafer using the ground PCD tool, and its performance was evaluated
Schematic of laser-cutting processemploying high-power laser beam
Fig. 3 depicts a schematic of the scribing and breaking process. During scribing, the substrate is scratched by means of a rotating scribing wheel. In this process, the "scratch" is
h the wheel. During the cleaving process, the initially generated scratch progresses deep into the substrate structure
exclusively made of PCD, as shown in Fig. 4, were used in the experiments performed in this study. PCD comprises diamond abrasives sintered in the presence of alloy
crystalline diampresents great difficulty to process difficulty when reducing its surface roughness and improving edge accuracy [10]. It is considered that the chipping ratio, edge accuracy and
g performance.
Figure 4. Schematic and pictorial representation of PCD scribing wheel
Kerf loss
Residual stress
Substrate Indenter
Bending stress
(c) Breaking
The proposed study focusses on the scribing process performed by means of a scribing wheel in order to overcome the aforementioned problems. During experiments, the proposed scribing process was employed in the cutting of monocrystalline wafers. Polycrystalline
edge some cutting edge radius were ground in trial with a diamond wheel, and the influence of grinding conditions and
performed on a monocrystalline SiC wafer using the ground PCD tool, and its performance was evaluated
cutting process power laser beam
Fig. 3 depicts a schematic of the scribing and breaking process. During scribing, the substrate is scratched by means of a rotating scribing wheel. In this process, the "scratch" is
h the wheel. During the cleaving process, the initially generated scratch progresses deep into the substrate structure
exclusively made of PCD, as shown in Fig. 4, were used in the experiments performed in this study. PCD comprises diamond abrasives sintered in the presence of alloy
crystalline diamond, presents great difficulty to process difficulty when reducing its surface roughness and improving edge accuracy [10]. It is considered that the chipping ratio, edge accuracy and
g performance.
Kerf loss
Laser beam
Indenter
Bending stress
aking
Figure 5. Schematic and pictorial representation of the PCD-wheel grinding setup
3. Experimental setup 3.1. Grinding of PCD scribing wheel
Fig.5 depicts schematic and pictorial representations of the setup used during grinding operations performed on the PCD scribing wheel. The PCD wheel (workpiece) was attached to the grinding setup by means of a stainless steel pin, and held in contact with the rotating diamond wheel. In order to prevent glazing and clogging of the diamond wheel, in-process truing and dressing were performed on the machine. For this purpose, a stick of white alumina WA#4000 was used as the truer. The PCD wheel was ground by means of the rotating diamond wheel, and the wheel surface, at the same time, was polished with the loose abrasives dropped off the truer/dresser. This may, therefore, be thought of as a hybrid grinding and polishing process.
Grinding conditions are summarized in Table 1. A cup type of diamond wheel was used as the grinding wheel with Φ200 mm diameter and the grain size was changed to # 3000, #5000 and #10000. The PCD scribing wheel, shaped similar to an abacus bead, was attached to the pin
Table 1 Grinding conditions Grinding wheel Grain size Shape
Outer diameter Rotation Circumferential velocity
Diamond wheel #3000, #5000, #10000 Cup type Φ200 mm 450 mm-1
277 m/min Truer / Dresser Feed rate
WA#4000 1.0 µm/s
Coolant Water base coolant Workpiece Out diameter Cutting edge angle Rotation Circumferential velocity
PCD (Poly crystalline diamond) Φ2 mm 100 ° 900 min-1
5.65 m/min Grinding angle against scribing wheel ridgeline
-90,-67.5,-45,-22.50,15,30,45,
60,75,90 ° Infeed depth of cut
Feed rate 15 µm×2 times
0.2 µm/s
Cup-type diamond wheel
PCD wheel(Workpiec
e)
Coolant
Al 2O3 dresser
Wheel spindle
40
Cup-type diamond wheel
PCD wheel
of a rotating workpiece spindle. Diameter of the PCD wheel was Φ2 mm, and the included cutting-edge angle was 100° as shown in Fig. 4.
3.2. Measurement method of the PCD scribing wheel
The surface of the PCD scribing wheel, ground as described above, was measured and evaluated by means of a non-contact laser probe scanner. A blue laser of short wavelength (λ=0.473 µm) was used in order to reduce the laser spot diameter, thereby improving its resolution. The spot diameter was reduced to 0.25 µm. Shape accuracy and surface roughness of the 40 degrees tilted outer surface and ridge line were measured, as depicted in Fig. 6.
Figure 6. Measurements performed on the PCD scribing setup 3.3. Scribing set-up and corresponding scribing method
In order to evaluate the PCD scribing wheel, monocrystalline wafers of SiC were scribed using the ground PCD wheel. Fig. 7 depicts the scribing set-up used during scribing experiments. The scribing wheel was made to rotate on the substrate by applying a constant load. In the scribing test, wafers having a thickness of 0.3 mm were vacuum-chucked onto the stage and scribed manually. Residual stresses are often generated during the scribing process, since scratches are formed along with plastic deformation of cracks that appear on substrates under the applied scribing load. These residual stresses were estimated by measuring phase differences on the scribed wafer by means of birefringence equipment.
Figure 7. Schematic and pictorial representation of the scribing setup 4. Experimental results 4.1 Results for grinding of PCD scribing wheel
The PCD scribing wheel was ground using a cup-type diamond grinding wheel, and the effects of grinding conditions on surface quality of the PCD wheel were tested.
(a) Effect of grinding direction The grinding angle θ with respect to the ridgeline was varied within the range from -90 °
- 90 °, as depicted in Fig. 9. The grain size during grinding was #3000. Fig. 8 depicts SEM
PCD wheel
Pin jig
Objective lens
Load
Wafer
Vacuum chuck
Stage
Scribing wheel
Load
Scribing wheel Wafer Vacuum
chuck
images of the ground scribing wheel on the ridgeline. For grinding angles between 45 chipping was observed on the ridgelno chipping was observed. In order to quantitatively evaluate the edge sharpness of the PCD scribing wheel, the following chipping ratio was introduced. A profile on the ridgeline was scanned usan edge measuring more than 1 the total length of the chipping, lc to the ridgeline length, L. rc = l
(a) Chipping ratio
Fig. 9(a) depicts variations in the measured chipping ratio on the ridgeline of the cutting
edge. Many chippings were observed at the grinding angles of 30 ° chippings were observed for grinding angles of the order of with that demonstrated by SEM images of the ground PCD wheel. Fig. 9(b) depicts variations in the measured surface roughness along the ridgeline
0
0.2
0.4
-90
Ch
ipp
ing
ra
tio
%
images of the ground scribing wheel on the ridgeline. For grinding angles between 45 chipping was observed on the ridgelno chipping was observed. In order to quantitatively evaluate the edge sharpness of the PCD scribing wheel, the following chipping ratio was introduced. A profile on the ridgeline was scanned using a nonan edge measuring more than 1 the total length of the chipping, lc to the ridgeline length, L.
rc = lc / L
Figure 8.
hipping ratio Figure 9. Effect of grinding angle against the ridgeline of the scribing wheel
Fig. 9(a) depicts variations in the measured chipping ratio on the ridgeline of the cutting edge. Many chippings were observed at the grinding angles of 30 ° chippings were observed for grinding angles of the order of with that demonstrated by SEM images of the ground PCD wheel. Fig. 9(b) depicts variations in the measured surface roughness along the ridgeline
Θ=-
Θ=0°
Θ=60°
-90 -45
Grinding angle
images of the ground scribing wheel on the ridgeline. For grinding angles between 45 chipping was observed on the ridgelno chipping was observed. In order to quantitatively evaluate the edge sharpness of the PCD scribing wheel, the following chipping ratio was introduced. A profile on the ridgeline was
ing a non-contact laser probe scanner, and chipping was defined as a micro break of an edge measuring more than 1 the total length of the chipping, lc to the ridgeline length, L.
c / L
Figure 8. SEM images of the ground scribing wheel on the ridgeline
hipping ratio variation (b) Figure 9. Effect of grinding angle against the ridgeline of the scribing wheel
Fig. 9(a) depicts variations in the measured chipping ratio on the ridgeline of the cutting edge. Many chippings were observed at the grinding angles of 30 ° chippings were observed for grinding angles of the order of with that demonstrated by SEM images of the ground PCD wheel. Fig. 9(b) depicts variations in the measured surface roughness along the ridgeline
-90° 10 µm
=0°
=60°
0 45
Grinding angle θ °
0
1
2
-90
Su
rfac
e ro
ug
hn
ess
µm
R
z
images of the ground scribing wheel on the ridgeline. For grinding angles between 45 chipping was observed on the ridgeline. On the other hand, grinding angle of no chipping was observed. In order to quantitatively evaluate the edge sharpness of the PCD scribing wheel, the following chipping ratio was introduced. A profile on the ridgeline was
contact laser probe scanner, and chipping was defined as a micro break of an edge measuring more than 1 µm in size. The chipping ratio, rc was calculated as the ratio of the total length of the chipping, lc to the ridgeline length, L.
c / L
SEM images of the ground scribing wheel on the ridgeline
(b) Surface roughnessFigure 9. Effect of grinding angle against the ridgeline of the scribing wheel
Fig. 9(a) depicts variations in the measured chipping ratio on the ridgeline of the cutting edge. Many chippings were observed at the grinding angles of 30 ° chippings were observed for grinding angles of the order of with that demonstrated by SEM images of the ground PCD wheel. Fig. 9(b) depicts variations in the measured surface roughness along the ridgeline
90° Θ=-67.5°
=0° Θ=15°
=60° Θ=75°
90
45
0
-
Grinding angle,
-45 0
Grinding angle
images of the ground scribing wheel on the ridgeline. For grinding angles between 45 ine. On the other hand, grinding angle of
no chipping was observed. In order to quantitatively evaluate the edge sharpness of the PCD scribing wheel, the following chipping ratio was introduced. A profile on the ridgeline was
contact laser probe scanner, and chipping was defined as a micro break of m in size. The chipping ratio, rc was calculated as the ratio of
the total length of the chipping, lc to the ridgeline length, L. c / L
SEM images of the ground scribing wheel on the ridgeline
urface roughness vFigure 9. Effect of grinding angle against the ridgeline of the scribing wheel
Fig. 9(a) depicts variations in the measured chipping ratio on the ridgeline of the cutting edge. Many chippings were observed at the grinding angles of 30 ° chippings were observed for grinding angles of the order of with that demonstrated by SEM images of the ground PCD wheel. Fig. 9(b) depicts variations in the measured surface roughness along the ridgeline
67.5°
=15°
=75°
9045
0°
135°
-90° -135-45°
Grinding angle,
45 90
Grinding angle θ °
images of the ground scribing wheel on the ridgeline. For grinding angles between 45 ine. On the other hand, grinding angle of
no chipping was observed. In order to quantitatively evaluate the edge sharpness of the PCD scribing wheel, the following chipping ratio was introduced. A profile on the ridgeline was
contact laser probe scanner, and chipping was defined as a micro break of m in size. The chipping ratio, rc was calculated as the ratio of
the total length of the chipping, lc to the ridgeline length, L. c / L
SEM images of the ground scribing wheel on the ridgeline
variation (c) Figure 9. Effect of grinding angle against the ridgeline of the scribing wheel
Fig. 9(a) depicts variations in the measured chipping ratio on the ridgeline of the cutting edge. Many chippings were observed at the grinding angles of 30 ° chippings were observed for grinding angles of the order of -90 ° with that demonstrated by SEM images of the ground PCD wheel. Fig. 9(b) depicts variations in the measured surface roughness along the ridgeline. Surface roughness corresponding to
Θ=-45°
=15° Θ=30°
=75° Θ=90°
135
135° PCD wheel
Ridgelin
Grinding angle, Θ
images of the ground scribing wheel on the ridgeline. For grinding angles between 45 ine. On the other hand, grinding angle of
no chipping was observed. In order to quantitatively evaluate the edge sharpness of the PCD scribing wheel, the following chipping ratio was introduced. A profile on the ridgeline was
contact laser probe scanner, and chipping was defined as a micro break of m in size. The chipping ratio, rc was calculated as the ratio of
SEM images of the ground scribing wheel on the ridgeline
(c) Wheel edge radius Figure 9. Effect of grinding angle against the ridgeline of the scribing wheel
Fig. 9(a) depicts variations in the measured chipping ratio on the ridgeline of the cutting edge. Many chippings were observed at the grinding angles of 30 ° - 75 °, a
90 ° - 15°. This trend coincides with that demonstrated by SEM images of the ground PCD wheel. Fig. 9(b) depicts variations
. Surface roughness corresponding to
45° Θ=
=30° Θ=45°
=90° Θ: Grinding angle
0
1
2
-90 -45
Ed
ge
ra
diu
s R
μm
Grinding angle
PCD wheel
Ridgelin
images of the ground scribing wheel on the ridgeline. For grinding angles between 45 ine. On the other hand, grinding angle of -90°, -45°, and 0°,
no chipping was observed. In order to quantitatively evaluate the edge sharpness of the PCD scribing wheel, the following chipping ratio was introduced. A profile on the ridgeline was
contact laser probe scanner, and chipping was defined as a micro break of m in size. The chipping ratio, rc was calculated as the ratio of
SEM images of the ground scribing wheel on the ridgeline
heel edge radius vFigure 9. Effect of grinding angle against the ridgeline of the scribing wheel
Fig. 9(a) depicts variations in the measured chipping ratio on the ridgeline of the cutting 75 °, and relatively few
15°. This trend coincides with that demonstrated by SEM images of the ground PCD wheel. Fig. 9(b) depicts variations
. Surface roughness corresponding to
=-22.5°
=45°
: Grinding angle
-45 0
Grinding angle θ °
images of the ground scribing wheel on the ridgeline. For grinding angles between 45 - 90°, 45°, and 0°,
no chipping was observed. In order to quantitatively evaluate the edge sharpness of the PCD scribing wheel, the following chipping ratio was introduced. A profile on the ridgeline was
contact laser probe scanner, and chipping was defined as a micro break of m in size. The chipping ratio, rc was calculated as the ratio of
(1)
variation Figure 9. Effect of grinding angle against the ridgeline of the scribing wheel
Fig. 9(a) depicts variations in the measured chipping ratio on the ridgeline of the cutting nd relatively few
15°. This trend coincides with that demonstrated by SEM images of the ground PCD wheel. Fig. 9(b) depicts variations
. Surface roughness corresponding to
45 90
°
negative grinding angles was smaller compared to that corresponding to positive angles. Fig. 9(c) depicts variations of measured edge radius along the ridgeline. Edge radius measured its minimum value when grinding angle was set to zero. It can, therefore, be inferred from the above results that it is most suitable to grind the PCD scribing wheel along its ridgeline.
(b) Effect of grinding wheel grain size To investigate the effect of grinding wheel grain size, the grinding angle, Θ was fixed at zero, and grain size of the grinding wheel was varied from #3000 to #10000. Corresponding grinding conditions are summarized in Table 2. Fig. 10(a) and 10(b), respectively, depict variations in the chipping ratio and surface roughness with wheel grain size. Grinding experiments demonstrate that the chipping ratio and surface roughness of the scribing wheel edge were smaller corresponding to smaller grain size of the wheel.
Table 2 Grinding conditions
(a) Variation of chipping ratio (b) Variation of surface roughness Figure 10. Effect of grain size of the grinding wheel
Figure 11. Effect of hybrid machining using loose diamond abrasives
Wheel
Outer diameter (mm) Rotation (mm
-1)
Speed (m/min)
SD 3000
Φ200
450
277
SD 5000
Φ150
600
283
SD 10000
Φ150
600
283
Workpiece
Outer diameter (mm)
Rotation (mm-1
)
Speed (m/min)
PCD (Polycrystalline diamond)
Φ2
900
5.65
Grinding angle, θ (°) 0
0
1
2
0 2500 5000 7500 10000
Su
rfa
ce r
ou
gh
ness
µm
Rz
Grain size #
0
0.04
0.08
0 2500 5000 7500 10000
Ch
ipp
ing
ra
tio
%
Grai size #
0
0.04
0.08
0.12
0.16
Ch
ipp
ing
ra
tio
%
Grinding
Grinding +
Polishing
0
0.5
1
1.5
Su
rfa
ce r
ou
gh
ne
ssµ
m R
z
Grinding
Grinding +
Polishing
0
0.5
1
1.5
Ed
ge
ra
diu
s R
µm
Grinding +
Polishing
Grinding
(c) Effect of hybrid grinding and polishing processes During the grinding experiment, the scribing wheel was ground with a diamond wheel
having a grain size of #3000 while adding loose abrasives in order to reduce the chipping ratio, surface roughness and improve machining efficiency. As a polishing abrasive, diamond abrasive of 0-3 µm in abrasive size was used. Fig. 11 depicts the effect of this hybrid machining using loose diamond abrasives. The chipping ratio and surface roughness of the wheel ridgeline were observed to have been reduced under hybrid machining while the edge radius was found to have slightly increased.
4.2 Scribing results obtained using the scribing wheel
A scribing test was performed using PCD scribing wheels ground with three grain sizes of the wheel, #3000, #5000 and #10000 of the diamond wheel as depicted in Fig. 10. Monocrystalline SiC wafers (0001) (Si face) were scribed under varying scribing loads. Scribing conditions are summarized in Table 3. Monocrystalline wafers were vacuum chucked, and the scribing wheel was scanned on the wafer with loads being applied via air pressure.
Nomarski micrographs of the scribed SiC wafer are depicted in Fig. 12. With increase in scribing load and coarsening of the grinding wheel grain size, the scratch was observed to have become clearer. Fig.13 depicts changes in scratch depth, measured using a non-contact type of laser probe scanner. In both crystal orientations, the scratch was observed to have become clear. With increase in scribing load and coarsening of the grinding wheel grain size, the depth of scratch was found to have increased.
Table3. Scribing conditions
Scribing wheel
Cutting edge angle
Grinding wheel
PCD (Poly crystalline diamond)
100°
#3000, #5000, #10000
Workpiece
Thickness
Monocrystalline SiC wafer (0001) Si face
0.33 mm
Load 1.2, 1.7,2.4,3.0 N (by Air pressure)
Stage Vacuum chuck
Figure 12. Nomarski micrographs for scribed SiC wafer
10µm
1.2 N
1.7 N
2.4 N
3.0 N
1.2 N
1.7 N
2.4 N
3.0 N
1.2 N
1.7 N
2.4 N
3.0 N
1.2 N
1.7 N
2.4 N
3.0 N
1.2 N
1.7 N
2.4 N
3.0 N
1.2 N
1.7 N
2.4 N
3.0 N
Parallel to OF Cross to OF
#3000
#5000
#10000
Grain size of wheel
Fig. 14 demonstrates changes in surface roughness of the scratches of the scratches on the SiC wafer surface post scribing. The surface roughness was measured and evaluated by means of a nonreduced grain size of the grinding wheel and increased sharpness of the edgwheel. In addition, very little residual stresses were observed.
5. Conclusions
PCD scribing wheels with different grinding angle were developed via grinding, and the cutting edge accuracies of prototype scribing wheels along with corresponding surface roughness, edge radius and chipping ratio were evaluated. Subsequently, monocrystalwafers were scribed and scratched using the prototype PCD scribing wheel, and evaluated. From the grinding and scribing experiments, following results were obtained:
(1) The cutting edge accuracy and surface roughness of the ground PCD tool were sfor the grinding angles of
(2) With decrease in grain size of the grinding wheel, the edge of the scribing wheel was observed to become sharper.
(3) The hybrid grinding and polishing processes were found to be effective in enhancing the precision of PCD scribing wheels.
(4) The scribed surface on the SiC wafer was deep and clear. Also, the residual stresses developed were negligible when the edge of the scribing wheel was sharp.
Acknowledgements
Fig. 14 demonstrates changes in surface roughness of the scratches of the scratches on the wafer surface post scribing. The surface roughness was measured and evaluated by means
of a non-contact laser probe scanner, and tends to be small in both crystal orientations for reduced grain size of the grinding wheel and increased sharpness of the edgwheel. In addition, very little residual stresses were observed.
(a) Parallel to flat orientation (OF)
(a) Parallel to flat orientation (OF) Figure 14.
5. Conclusions PCD scribing wheels with different grinding angle were developed via grinding, and the
cutting edge accuracies of prototype scribing wheels along with corresponding surface roughness, edge radius and chipping ratio were evaluated. Subsequently, monocrystalwafers were scribed and scratched using the prototype PCD scribing wheel, and evaluated. From the grinding and scribing experiments, following results were obtained:
(1) The cutting edge accuracy and surface roughness of the ground PCD tool were sfor the grinding angles of
(2) With decrease in grain size of the grinding wheel, the edge of the scribing wheel was observed to become sharper.
(3) The hybrid grinding and polishing processes were found to be effective in enhancing the recision of PCD scribing wheels.
(4) The scribed surface on the SiC wafer was deep and clear. Also, the residual stresses developed were negligible when the edge of the scribing wheel was sharp.
Acknowledgements
0.3
0.6
0.9
De
pth
µm
0
0.5
1
1.5
2
Su
rfa
ce r
ou
gh
ne
ss μ
m R
z
Fig. 14 demonstrates changes in surface roughness of the scratches of the scratches on the wafer surface post scribing. The surface roughness was measured and evaluated by means
contact laser probe scanner, and tends to be small in both crystal orientations for reduced grain size of the grinding wheel and increased sharpness of the edgwheel. In addition, very little residual stresses were observed.
(a) Parallel to flat orientation (OF) Figure 13.
(a) Parallel to flat orientation (OF) Figure 14. Variations in surface roughness of scratch with scribing load
PCD scribing wheels with different grinding angle were developed via grinding, and the cutting edge accuracies of prototype scribing wheels along with corresponding surface roughness, edge radius and chipping ratio were evaluated. Subsequently, monocrystalwafers were scribed and scratched using the prototype PCD scribing wheel, and evaluated. From the grinding and scribing experiments, following results were obtained:
(1) The cutting edge accuracy and surface roughness of the ground PCD tool were sfor the grinding angles of -90
(2) With decrease in grain size of the grinding wheel, the edge of the scribing wheel was observed to become sharper.
(3) The hybrid grinding and polishing processes were found to be effective in enhancing the recision of PCD scribing wheels.
(4) The scribed surface on the SiC wafer was deep and clear. Also, the residual stresses developed were negligible when the edge of the scribing wheel was sharp.
Acknowledgements
0
0.3
0.6
0.9
0 1
#3000#5000
#10000
0
Load
Fig. 14 demonstrates changes in surface roughness of the scratches of the scratches on the wafer surface post scribing. The surface roughness was measured and evaluated by means
contact laser probe scanner, and tends to be small in both crystal orientations for reduced grain size of the grinding wheel and increased sharpness of the edgwheel. In addition, very little residual stresses were observed.
(a) Parallel to flat orientation (OF) Figure 13. Change of scratch depth with scribing load
(a) Parallel to flat orientation (OF) Variations in surface roughness of scratch with scribing load
PCD scribing wheels with different grinding angle were developed via grinding, and the cutting edge accuracies of prototype scribing wheels along with corresponding surface roughness, edge radius and chipping ratio were evaluated. Subsequently, monocrystalwafers were scribed and scratched using the prototype PCD scribing wheel, and evaluated. From the grinding and scribing experiments, following results were obtained:
(1) The cutting edge accuracy and surface roughness of the ground PCD tool were s90 - 0°.
(2) With decrease in grain size of the grinding wheel, the edge of the scribing wheel was
(3) The hybrid grinding and polishing processes were found to be effective in enhancing the recision of PCD scribing wheels.
(4) The scribed surface on the SiC wafer was deep and clear. Also, the residual stresses developed were negligible when the edge of the scribing wheel was sharp.
2
Load N
#3000 #5000
#10000
2
N
#3000 #5000
#10000
Fig. 14 demonstrates changes in surface roughness of the scratches of the scratches on the wafer surface post scribing. The surface roughness was measured and evaluated by means
contact laser probe scanner, and tends to be small in both crystal orientations for reduced grain size of the grinding wheel and increased sharpness of the edgwheel. In addition, very little residual stresses were observed.
(a) Parallel to flat orientation (OF) Change of scratch depth with scribing load
(a) Parallel to flat orientation (OF) Variations in surface roughness of scratch with scribing load
PCD scribing wheels with different grinding angle were developed via grinding, and the cutting edge accuracies of prototype scribing wheels along with corresponding surface roughness, edge radius and chipping ratio were evaluated. Subsequently, monocrystalwafers were scribed and scratched using the prototype PCD scribing wheel, and evaluated. From the grinding and scribing experiments, following results were obtained:
(1) The cutting edge accuracy and surface roughness of the ground PCD tool were s
(2) With decrease in grain size of the grinding wheel, the edge of the scribing wheel was
(3) The hybrid grinding and polishing processes were found to be effective in enhancing the
(4) The scribed surface on the SiC wafer was deep and clear. Also, the residual stresses developed were negligible when the edge of the scribing wheel was sharp.
3
Su
rfa
ce r
ou
gh
ne
ssμ
m R
z
4
Fig. 14 demonstrates changes in surface roughness of the scratches of the scratches on the wafer surface post scribing. The surface roughness was measured and evaluated by means
contact laser probe scanner, and tends to be small in both crystal orientations for reduced grain size of the grinding wheel and increased sharpness of the edgwheel. In addition, very little residual stresses were observed.
(b) Normal to flat orientation Change of scratch depth with scribing load
(a) Parallel to flat orientation (OF) (b) Normal to flat orientation Variations in surface roughness of scratch with scribing load
PCD scribing wheels with different grinding angle were developed via grinding, and the cutting edge accuracies of prototype scribing wheels along with corresponding surface roughness, edge radius and chipping ratio were evaluated. Subsequently, monocrystalwafers were scribed and scratched using the prototype PCD scribing wheel, and evaluated. From the grinding and scribing experiments, following results were obtained:
(1) The cutting edge accuracy and surface roughness of the ground PCD tool were s
(2) With decrease in grain size of the grinding wheel, the edge of the scribing wheel was
(3) The hybrid grinding and polishing processes were found to be effective in enhancing the
(4) The scribed surface on the SiC wafer was deep and clear. Also, the residual stresses developed were negligible when the edge of the scribing wheel was sharp.
0
0.3
0.6
0.9
0
De
pth
µm
#10000
0
0.5
1
1.5
2
0
Su
rfa
ce r
ou
gh
ne
ssμ
m R
z
Fig. 14 demonstrates changes in surface roughness of the scratches of the scratches on the wafer surface post scribing. The surface roughness was measured and evaluated by means
contact laser probe scanner, and tends to be small in both crystal orientations for reduced grain size of the grinding wheel and increased sharpness of the edg
(b) Normal to flat orientation Change of scratch depth with scribing load
(b) Normal to flat orientation Variations in surface roughness of scratch with scribing load
PCD scribing wheels with different grinding angle were developed via grinding, and the cutting edge accuracies of prototype scribing wheels along with corresponding surface roughness, edge radius and chipping ratio were evaluated. Subsequently, monocrystalwafers were scribed and scratched using the prototype PCD scribing wheel, and evaluated. From the grinding and scribing experiments, following results were obtained:
(1) The cutting edge accuracy and surface roughness of the ground PCD tool were s
(2) With decrease in grain size of the grinding wheel, the edge of the scribing wheel was
(3) The hybrid grinding and polishing processes were found to be effective in enhancing the
(4) The scribed surface on the SiC wafer was deep and clear. Also, the residual stresses developed were negligible when the edge of the scribing wheel was sharp.
1 2
Load N
#3000 #5000
#10000
2
Load N
#3000 #5000
#10000
Fig. 14 demonstrates changes in surface roughness of the scratches of the scratches on the wafer surface post scribing. The surface roughness was measured and evaluated by means
contact laser probe scanner, and tends to be small in both crystal orientations for reduced grain size of the grinding wheel and increased sharpness of the edge of the scribing
(b) Normal to flat orientation Change of scratch depth with scribing load
(b) Normal to flat orientation Variations in surface roughness of scratch with scribing load
PCD scribing wheels with different grinding angle were developed via grinding, and the cutting edge accuracies of prototype scribing wheels along with corresponding surface roughness, edge radius and chipping ratio were evaluated. Subsequently, monocrystalwafers were scribed and scratched using the prototype PCD scribing wheel, and evaluated. From the grinding and scribing experiments, following results were obtained:
(1) The cutting edge accuracy and surface roughness of the ground PCD tool were s
(2) With decrease in grain size of the grinding wheel, the edge of the scribing wheel was
(3) The hybrid grinding and polishing processes were found to be effective in enhancing the
(4) The scribed surface on the SiC wafer was deep and clear. Also, the residual stresses
3
4
#3000 #5000
#10000
Fig. 14 demonstrates changes in surface roughness of the scratches of the scratches on the wafer surface post scribing. The surface roughness was measured and evaluated by means
contact laser probe scanner, and tends to be small in both crystal orientations for e of the scribing
Variations in surface roughness of scratch with scribing load
PCD scribing wheels with different grinding angle were developed via grinding, and the cutting edge accuracies of prototype scribing wheels along with corresponding surface roughness, edge radius and chipping ratio were evaluated. Subsequently, monocrystalline SiC wafers were scribed and scratched using the prototype PCD scribing wheel, and evaluated.
(1) The cutting edge accuracy and surface roughness of the ground PCD tool were superior
(2) With decrease in grain size of the grinding wheel, the edge of the scribing wheel was
(3) The hybrid grinding and polishing processes were found to be effective in enhancing the
(4) The scribed surface on the SiC wafer was deep and clear. Also, the residual stresses
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