vishay-4n35-datasheet

4N35/ 4N36/ 4N37/ 4N38

Document Number 83717Rev. 1.5, 27-Jan-05

Vishay Semiconductors

www.vishay.com1

i179004i179004

1

2

3

6

5

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B

C

E

A

C

NC

PbPb-free

e3

Optocoupler, Phototransistor Output, With Base Connection

Features Isolation Test Voltage 5300 VRMS Interfaces with common logic families Input-output coupling capacitance < 0.5 pF Industry Standard Dual-in line 6-pin package Lead-free component Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Agency Approvals Underwriters Laboratory File #E52744

DIN EN 60747-5-2 (VDE0884)DIN EN 60747-5-5 pendingAvailable with Option 1

ApplicationsAC mains detectionReed relay drivingSwitch mode power supply feedbackTelephone ring detectionLogic ground isolationLogic coupling with high frequency noise rejection

DescriptionThis data sheet presents five families of Vishay Indus-try Standard Single Channel Phototransistor Cou-plers.These families include the 4N35/ 4N36/ 4N37/4N38 couplers.Each optocoupler consists of gallium arsenide infra-red LED and a silicon NPN phototransistor.These couplers are Underwriters Laboratories (UL)listed to comply with a 5300 VRMS isolation test volt-age.This isolation performance is accomplished throughVishay double molding isolation manufacturing pro-cess. Comliance to DIN EN 60747-5-2(VDE0884)/DIN EN 60747-5-5 pending partial discharge isolationspecification is available for these families by orderingoption 1.

These isolation processes and the Vishay ISO9001quality program results in the highest isolation perfor-mance available for a commecial plastic phototransis-tor optocoupler.The devices are available in lead formed configura-tion suitable for surface mounting and are availableeither on tape and reel, or in standard tube shippingcontainers.Note: Designing with data sheet is cover in Application Note 45

Order Information

For additional information on the available options refer to Option Information.

Part Remarks4N35 CTR > 100 %, DIP-64N36 CTR > 100 %, DIP-64N37 CTR > 100 %, DIP-64N38 CTR > 20 %, DIP-64N35-X006 CTR > 100 %, DIP-6 400 mil (option 6)4N35-X007 CTR > 100 %, SMD-6 (option 7)4N35-X009 CTR > 100 %, SMD-6 (option 9)4N36-X007 CTR > 100 %, SMD-6 (option 7)4N36-X009 CTR > 100 %, SMD-6 (option 9)4N37-X006 CTR > 100 %, DIP-6 400 mil (option 6)4N37-X009 CTR > 100 %, SMD-6 (option 9)

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4N35/ 4N36/ 4N37/ 4N38Vishay Semiconductors

Absolute Maximum RatingsTamb = 25 C, unless otherwise specifiedStresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device isnot implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absoluteMaximum Rating for extended periods of the time can adversely affect reliability.

Input

Output

Coupler

Parameter Test condition Symbol Value UnitReverse voltage VR 6.0 VForward current IF 60 mASurge current 10 s IFSM 2.5 APower dissipation Pdiss 100 mW

Parameter Test condition Symbol Value UnitCollector-emitter breakdown voltage

VCEO 70 V

Emitter-base breakdown voltage

VEBO 7.0 V

Collector current IC 50 mA(t 1.0 ms) IC 100 mA

Power dissipation Pdiss 150 mW

Parameter Test condition Symbol Value UnitIsolation test voltage VISO 5300 VRMSCreepage 7.0 mmClearance 7.0 mmIsolation thickness between emitter and detector

0.4 mm

Comparative tracking index per DIN IEC 112/VDE0303,part 1

175

Isolation resistance VIO = 500 V, Tamb = 25 C RIO 1012 VIO = 500 V, Tamb = 100 C RIO 1011

Storage temperature Tstg - 55 to + 150 COperating temperature Tamb - 55 to + 100 CJunction temperature Tj 100 CSoldering temperature max. 10 s dip soldering:

distance to seating plane 1.5 mm

Tsld 260 C

4N35/ 4N36/ 4N37/ 4N38



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Electrical CharacteristicsTamb = 25 C, unless otherwise specifiedMinimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineeringevaluation. Typical values are for information only and are not part of the testing requirements.

Input

1) Indicates JEDEC registered value

Output


Coupler


Parameter Test condition Symbol Min Typ. Max UnitForward voltage1) IF = 10 mA VF 1.3 1.5 V

IF = 10 mA, Tamb = - 55 C VF 0.9 1.3 1.7 V

Reverse current1) VR = 6.0 V IR 0.1 10 ACapacitance VR = 0, f = 1.0 MHz CO 25 pF

Parameter Test condition Part Symbol Min Typ. Max UnitCollector-emitter breakdown voltage1)

IC = 1.0 mA 4N35 BVCEO 30 V

4N36 BVCEO 30 V4N37 BVCEO 30 V4N38 BVCEO 80 V

Emitter-collector breakdown voltage1)

IE = 100 A BVECO 7.0 V

Collector-base breakdown voltage1)

IC = 100 A, IB = 1.0 A 4N35 BVCBO 70 V

4N36 BVCBO 70 V4N37 BVCBO 70 V4N38 BVCBO 80 V

Collector-emitter leakage current1)

VCE = 10 V, IF = 0 4N35 ICEO 5.0 50 nA

4N36 ICEO 5.0 50 nAVCE = 10 V, IF=0 4N37 ICEO 5.0 50 nAVCE = 60 V, IF = 0 4N38 ICEO 50 nAVCE = 30 V, IF = 0, Tamb = 100 C

4N35 ICEO 500 A

4N36 ICEO 500 A4N37 ICEO 500 A

VCE = 60 V, IF = 0, Tamb = 100 C

4N38 ICEO 6.0 A

Collector-emitter capacitance VCE = 0 CCE 6.0 pF

Parameter Test condition Symbol Min Typ. Max UnitResistance, input to output1) VIO = 500 V RIO 1011 Capacitance (input-output) f = 1.0 MHz CIO 0.5 pF

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Current Transfer Ratio


Switching Characteristics


Typical Characteristics (Tamb = 25 C unless otherwise specified)

Parameter Test condition Part Symbol Min Typ. Max UnitDC Current Transfer Ratio1) VCE = 10 V, IF = 10 mA 4N35 CTRDC 100 %

4N36 CTRDC 100 %4N37 CTRDC 100 %

VCE = 10 V, IF = 20 mA 4N38 CTRDC 20 %VCE = 10 V, IF = 10 mA, TA = - 55 to + 100 C

4N35 CTRDC 40 50 %

4N36 CTRDC 40 50 %4N37 CTRDC 40 50 %4N38 CTRDC 30 %

Parameter Test condition Symbol Min Typ. Max UnitSwitching time1) IC = 2 mA, RL = 100 , VCC = 10 V ton, toff 10 s

Figure 1. Forward Voltage vs. Forward Current

i4n25_01

100101.10.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

IF - Forward Current - mA

V F-Fo

rward

Volta

ge-V TA = 55C

TA = 25C

TA = 85C

Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current

i4n25_02

Normalized to:

0.0

0.5

1.0

1.5

0 1 10 100IF - LED Current - mA

NCTRNCTR(SAT)NC

TR-N

orm

lized

CTR CTRce(sat) Vce=0.4 V

Vce=10 V, IF=10 mA, TA=25C

TA=25C

4N35/ 4N36/ 4N37/ 4N38



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Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Current

Figure 4. Normalized Non-saturated and saturated CTR vs. LED Current

Figure 5. Normalized Non-saturated and saturated CTR vs. LED Current

i4n25_03

100101.10.0

0.5

1.0

1.5

IF- LED Current - mA

NC

TR-N

orm

aliz

edC

TR

Normalized to:

CTRce(sat) Vce=0.4 VVce=10 V, IF=10 mA, TA=25C

NCTRNCTR(SAT)

TA=50C

i4n25_04

100101.10.0

0.5

1.0

1.5

IF - LED Current - mA

NC

TR-N

orm

aliz

edC

TR

Normalized to:

CTRce(sat) Vce=0.4 VVce=10 V, IF=10 mA, TA=25C

NCTRNCTR(SAT)

TA=70C

i4n25_05

100101.10.0

0.5

1.0

1.5


NC

TR-N

orm

aliz

edC

TR

Normalized to:

CTRce(sat) Vce = 0.4 VVce=10 V, IF=10 mA, TA=25C

NCTRNCTR(SAT)

TA=85C

Figure 6. Collector-Emitter Current vs. Temperature and LED Current

Figure 7. Collector-Emitter Leakage Current vs.Temp.

Figure 8. Normalized CTRcb vs. LED Current and Temp.

i4n25_06

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50C

70C85C


Ice

-C

olle

ctor

Cur

rent

-m

A

25C

i4n25_07

1008060402002010

10

10

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10

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1

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TA - Ambient Temperature - C

Iceo

-C

olle

ctor

-Em

itter

-nA

TypicalVce = 10 V

i4n25_08

Normalized to:

0.0

0.5

1.0

1.5

25C50C70C


NC

TRcb

-N

orm

aliz

edC

TRcb

.1 1 10 100

Vcb=9.3 V, IF=10 mA, TA=25C

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Figure 9. Normalized Photocurrent vs. IF and Temp.

Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature

Figure 11. Normalized HFE vs. Base Current and Temp.

i4n25_09

0.

Normalized to:

0.01

1

1

10


Nor

mal

ized

Phot

ocur

rent

.1 1 10 100

IF=10 mA, TA=25C

Nib, TA=20CNib, TA= 25CNib, TA= 50CNib, TA= 70C

i4n25_10

0.4

0.6

1.0

1.2

Normalized to:

Ib - Base Current - A1 10 100 1000

Ib=20 A, Vce=10 V, TA=25C

25C

70C

20C

NH

FE-N

orm

aliz

edH

FE

0.8

i4n25_11

0.0

0.5

1.0

1.5

25C

20C

50C70C

NH

FE(sa

t)-N

orm

aliz

edSa

tura

ted

HFE

1 10 100 1000

Vce=10 V, Ib=20 ATA=25C

Vce=0.4 V

Ib - Base Current - A

Normalized to:

Figure 12. Propagation Delay vs. Collector Load Resistor

Figure 13. Switching Timing

Figure 14. Switching Schematic

i4n25_12

1

10

100

1000

RL - Collector Load Resistor - k

t PLH

-Pr

opa

gatio

nD

elay

-s

2.5

2.0

1.5

1.0.1 1 10 100

IF =10 mA,TA=25CVCC=5.0 V, Vth=1.5 V

tPLH

tPHL

t PH

L-Pr

opa

gatio

nD

elay

-s

i4n25_13

IF

tR

=1.5 V

VOtD

tS tFtPHL

tPLH

VTH

i4n25_14

VCC = 5.0 V

F=10 KHz,DF=50%

RL

VO

IF=10 mA

4N35/ 4N36/ 4N37/ 4N38



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Package Dimensions in Inches (mm)For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section. For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.

DIL300-6 Package Dimensions

DIP-6 Package Dimensions

14770

i178004

.010 (.25)typ.

.114 (2.90).130 (3.0)

.130 (3.30)

.150 (3.81)

.031 (0.80) min.

.300 (7.62)typ.

.031 (0.80)

.035 (0.90).100 (2.54) typ.

.039(1.00)Min.

.018 (0.45)

.022 (0.55)

.048 (0.45)

.022 (0.55)

.248 (6.30)

.256 (6.50)

.335 (8.50)

.343 (8.70)

pin one ID

654

123

18

39

.300.347(7.628.81)

4typ.

ISO Method A

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min..315 (8.00)

.020 (.51).040 (1.02)

.300 (7.62)ref.

.375 (9.53).395 (10.03)

.012 (.30) typ..0040 (.102).0098 (.249)

15 max.

Option 9

.014 (0.35)

.010 (0.25).400 (10.16).430 (10.92)

.307 (7.8)

.291 (7.4)

.407 (10.36).391 (9.96)

Option 6

.315 (8.0)MIN.

.300 (7.62)TYP.

.180 (4.6)

.160 (4.1)

.331 (8.4)MIN.

.406 (10.3)MAX.

.028 (0.7)MIN.

Option 7

18450

4N35/ 4N36/ 4N37/ 4N38



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Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1. Meet all present and future national and international statutory requirements.2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Legal Disclaimer NoticeVishay

Document Number: 91000 www.vishay.comRevision: 08-Apr-05 1

NoticeSpecifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, byestoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay'sterms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any expressor implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitnessfor a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.Customers using or selling these products for use in such applications do so at their own risk and agree to fullyindemnify Vishay for any damages resulting from such improper use or sale.

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