trenchstoptm series - infineon technologies

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1www.infineon.com 2017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiodeFeatures:

•AutomotiveAECQ101qualified•DesignedforDC/ACconvertersforAutomotiveApplication•VerylowVCE(sat)1.5V(typ.)•MaximumJunctionTemperature150°C•Dynamicallystresstested•Shortcircuitwithstandtime5µs•PositivetemperaturecoefficientinVCE(sat)•LowEMI•LowGateCharge•GreenPackage•TRENCHSTOPTMandFieldstoptechnologyfor600Vapplicationsoffers:-verytightparameterdistribution-highruggedness,temperaturestablebehavior-veryhighswitchingspeed

Applications:

•Maininverter•Climatecompressor•PTCheater•Motordrives

G

C

E

G

E

C

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageAIKB20N60CT 600V 20A 1.5V 150°C AK20DCT PG-TO263-3

Datasheet 2 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 3 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

MaximumRatings

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 600 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IC 40.020.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A

TurnoffsafeoperatingareaVCE≤600V,Tvj≤150°C1) - 60.0 A

Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IF 40.020.0

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A

Gate-emitter voltage VGE ±20 V

Short circuit withstand timeVGE=15.0V,VCC≤400VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=150°C

tSC

5

µs

PowerdissipationTC=25°C Ptot 156.0 W

Operating junction temperature Tvj -40...+150 °C

Storage temperature Tstg -40...+150 °C

Soldering temperature,reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C

ThermalResistance

Valuemin. typ. max.

Parameter Symbol Conditions Unit

RthCharacteristics

IGBT thermal resistance,junction - case Rth(j-c) - - 0.90 K/W

Diode thermal resistance,junction - case Rth(j-c) - - 1.50 K/W

Thermal resistance, min. footprintjunction - ambient Rth(j-a) - - 65 K/W

Thermal resistance, 6cm² Cu onPCBjunction - ambient

Rth(j-a) - - 40 K/W

1) tp≤1µs

Datasheet 4 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=20.0ATvj=25°CTvj=150°C

--

1.501.85

2.05-

V

Diode forward voltage VF

VGE=0V,IF=20.0ATvj=25°CTvj=150°C

--

1.651.65

2.05-

V

Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE 4.1 4.9 5.7 V

Zero gate voltage collector current ICESVCE=600V,VGE=0VTvj=25°CTvj=150°C

--

-550

40-

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=20.0A - 11.0 - S

Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 1100 -

Output capacitance Coes - 71 -

Reverse transfer capacitance Cres - 32 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=480V,IC=20.0A,VGE=15V - 120.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 7.0 - nH

Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s

IC(SC)VGE=15.0V,VCC≤400V,tSC≤5µsTvj=150°C

- 183 - A

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 18 - ns

Rise time tr - 14 - ns

Turn-off delay time td(off) - 199 - ns

Fall time tf - 42 - ns

Turn-on energy Eon - 0.31 - mJ

Turn-off energy Eoff - 0.46 - mJ

Total switching energy Ets - 0.77 - mJ

Tvj=25°C,VCC=600V,IC=20.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=131nH,Cσ=31pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

Datasheet 5 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 41 - ns

Diode reverse recovery charge Qrr - 0.31 - µC

Diode peak reverse recovery current Irrm - 13.3 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - 711 - A/µs

Tvj=25°C,VR=600V,IF=20.0A,diF/dt=880A/µs

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 18 - ns

Rise time tr - 17 - ns

Turn-off delay time td(off) - 217 - ns

Fall time tf - 70 - ns

Turn-on energy Eon - 0.47 - mJ

Turn-off energy Eoff - 0.60 - mJ

Total switching energy Ets - 1.07 - mJ

Tvj=150°C,VCC=600V,IC=20.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=131nH,Cσ=31pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

DiodeCharacteristic,atTvj=150°C

Diode reverse recovery time trr - 201 - ns

Diode reverse recovery charge Qrr - 1.28 - µC

Diode peak reverse recovery current Irrm - 16.6 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - 481 - A/µs

Tvj=150°C,VR=600V,IF=20.0A,diF/dt=800A/µs

Datasheet 6 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

Figure 1. Powerdissipationasafunctionofcasetemperature(Tj≤150°C)

TC,CASETEMPERATURE[°C]

Ptot ,POWERDISSIPATION[W

]

25 50 75 100 125 1500

20

40

60

80

100

120

140

Figure 2. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤150°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLECTO

RCURRENT[A]

25 50 75 100 125 1500

5

10

15

20

25

30

Figure 3. Typicaloutputcharacteristic(Tj=25°C)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 40

10

20

30

40

50

60VGE=20V

17V

15V

13V

11V

9V

7V

Figure 4. Typicaloutputcharacteristic(Tj=150°C)


IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 40

10

20

30

40

50

60VGE=20V

17V

15V

13V

11V

9V

7V

Datasheet 7 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

Figure 5. Typicaltransfercharacteristic(VCE=10V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0 2 4 6 8 100

5

10

15

20

25

30

35

4025°CTj=150°C

Figure 6. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tj,JUNCTIONTEMPERATURE[°C]

VCE(sat) ,COLLECTO

R-EMITTE

RSATU

RATION[A

]

0 50 100 1500.0

0.5

1.0

1.5

2.0

2.5

3.0IC=10AIC=20AIC=40A

Figure 7. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tj=150°C,VCE=400V,VGE=15/0V,RG=12Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0 5 10 15 20 25 30 35 401

10

100

1000td(off)

tftd(on)

tr

Figure 8. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tj=150°C,VCE=400V,VGE=15/0V,IC=20A,DynamictestcircuitinFigure E)

RG,GATERESISTOR[Ω]


0 10 20 30 40 50 60 7010

100

1000td(off)

tftd(on)

tr

Datasheet 8 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

Figure 9. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=20A,RG=12Ω,DynamictestcircuitinFigure E)

TG,JUNCTIONTEMPERATURE[°C]


25 50 75 100 125 15010

100

1000td(off)

tftd(on)

tr

Figure 10. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.29mA)

TG,JUNCTIONTEMPERATURE[°C]

VGE(th) ,GATE

-EMITTE

RTHRESHOLD

VOLTAGE[V

]

-50 0 50 100 1500

1

2

3

4

5

6

7typ.

Figure 11. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tj=150°C,VCE=400V,VGE=15/0V,RG=12Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENERGYLOSSES[m

J]

0 5 10 15 20 25 30 35 400.0

0.4

0.8

1.2

1.6

2.0

2.4

Eoff

Eon*Ets*

Figure 12. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tj=150°C,VCE=400V,VGE=15/0V,IC=20A,DynamictestcircuitinFigure E)

RG,GATERESISTOR[Ω]

E,S


J]

0 10 20 30 40 50 60 700.0

0.4

0.8

1.2

1.6

2.0

2.4

Eoff

Eon*Ets*

Datasheet 9 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

Figure 13. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=20A,RG=12Ω,DynamictestcircuitinFigure E)


E,S


J]

25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

Eoff

Eon*Ets*

Figure 14. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tj=150°C,VGE=15/0V,IC=20A,RG=12Ω,DynamictestcircuitinFigure E)


E,S


J]

300 350 400 450 5000.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Eoff

Eon*Ets*

Figure 15. Typicalgatecharge(IC=20A)

QGE,GATECHARGE[nC]

VGE,G

ATE

-EMITTE

RVOLTAGE[V

]

0 25 50 75 100 125 1500

5

10

15

20120V480V

Figure 16. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APACITANCE[pF]

0 10 20 30 40 5010

100

1000

Ciss

Coss

Crss

Datasheet 10 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

Figure 17. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤400V,Tj≤150°C)


IC(SC) ,SHORTCIRCUITCOLLECTO

RCURRENT[A]

12 14 16 18 200

50

100

150

200

250

300

350

Figure 18. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE=400V,startatTj=25°C,Tjmax≤150°C)


tSC,S

HORTCIRCUITW

ITHSTA

NDTIME[µs]

10 11 12 13 14 150

2

4

6

8

10

12

Figure 19. IGBTtransientthermalresistanceasafunctionofpulsewidthfordifferentdutycyclesD(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALRESISTA

NCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.50.20.10.050.020.01single pulse

i:ri[K/W]:τi[s]:

10.070419.6E-5

20.307096.8E-4

30.31990.0108462

40.187150.0692548

Figure 20. DiodetransientthermalimpedanceasafunctionofpulsewidthfordifferentdutycyclesD(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALRESISTA

NCE[K

/W]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.50.20.10.050.020.01single pulse

i:ri[K/W]:τi[s]:

10.339971.3E-4

20.444561.5E-3

30.581460.0182142

40.134830.0920745

Datasheet 11 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

Figure 21. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V,DynamictestcircuitinFigureE)

diF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVERSERECOVERYTIME[ns]

600 900 1200 15000

50

100

150

200

250

300Tj=25°C, IF = 20ATj=150°C, IF = 20A

Figure 22. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V,DynamictestcircuitinFigureE)


Qrr,R

EVERSERECOVERYCHARGE[µC]

600 900 1200 15000.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6Tj=25°C, IF = 20ATj=150°C, IF = 20A

Figure 23. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V,DynamictestcircuitinFigureE)


Irr,R

EVERSERECOVERYCURRENT[A]

600 900 1200 15000

5

10

15

20

25Tj=25°C, IF = 20ATj=150°C, IF = 20A

Figure 24. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V,DynamictestcircuitinFigureE)


dIrr/dt,diodepeakrateoffallofI

rr[A

/µs]

600 900 1200 1500-900

-750

-600

-450

-300

-150

0Tj=25°C, IF = 20ATj=150°C, IF = 20A

Datasheet 12 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

Figure 25. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWARDCURRENT[A]

0.0 0.5 1.0 1.5 2.0 2.50

10

20

30

40

50

60Tj=25°CTj=150°C

Figure 26. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWARDVOLTAGE[V

]

0 50 100 1500.0

0.5

1.0

1.5

2.0

2.5IC=10AIC=20AIC=40A

Datasheet 13 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

01

30-08-2007

Z8B00003324

0.039

0.000

0.026

0.335

0.013

0.037

MIN

0.169

0.046

0.280

0.090

0.386

8.60 0.3390.256

0.575

0.632

0.366

0.177

0.421

0.049

0.144

5.08

2.54

1.00

7.10

2.29

9.80

6.50

9.30

4.50

14.61

16.05

10.70

1.25

3.65

0.70

2

0.00

0.65

0.33

8.51

0.95

4.30

MIN

1.17

1.60

1.78

7.90

10.31

3.00

15.88

16.25

9.50

4.70

10.90

1.45

3.85

MAX

4.57

0.25

1.15

0.65

9.45

0.85

1.40

0.200

0.100

0.028

2

0.063

0.070

0.311

0.406

0.118

0.625

0.640

0.374

0.185

0.429

0.057

0.152

0.010

0.180

0.033

0.026

0.372

0.045

MAX

0.055

0

7.5mm

55

0

Package Drawing PG-TO263-3

Datasheet 14 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 15 V2.12017-02-09

AIKB20N60CT

TRENCHSTOPTMSeries

RevisionHistory

AIKB20N60CT

Revision:2017-02-09,Rev.2.1Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2017-02-09 Data sheet created

TrademarksofInfineonTechnologiesAGµHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™,CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™,HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™,StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™TrademarksupdatedNovember2015OtherTrademarksAllreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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