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Realizations of complex logic operations at the nanoscale F. Remacle University of Liège, Belgium 1 2nd AtMol meeting, January 2012

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Realizations of complex logic operations at the nanoscale

F. Remacle University of Liège, Belgium

1 2nd AtMol meeting, January 2012

2

MOLOC MOlecular LOgic Circuits

FP7 FET proactive Nano-ICT 215750 : New Functionalities

2nd AtMol meeting, January 2012

Objectives Realize complex logic operations at the hardware level at the nanoscale

Beyond the switching paradigm : •  provide the foundation of a Post-Boolean approach

•  provide new logic schemes that enables complex logic functions

3

•  logic circuits (Boolean) directly implemented at the hardware level •  multivalued logic circuits (ternary multiplier and ternary adder) •  search and identification function algorithm as a finite state machine

Experimental realizations of

2nd AtMol meeting, January 2012

Quasi classical approach

4 2nd AtMol meeting, January 2012

•  encode Boolean or multi-valued variables in the discrete charge, energy or conformational states of confined molecular or nano systems.

•  provide inputs as a selective perturbation that induces specific transitions between these states.

•  processing of information is performed by the quantum dynamics of the multi state system.

•  the outputs are a probe of the final states.

Different from quantum computing : no information is encoded into the phase of the wave function.

Implementations of electrically addressed logic circuits at the hardware level

5

Transport through a single atom in a silicon transistor (SAT).

Sven Rogge TU- Delft School of Physics & CQC2T University of New South Wales Australia

2nd AtMol meeting, January 2012

Assignment of the level spectrum of the As dopant atom from the stability maps of a FinFET transistor

6

Lansberger et al, Nature Physics, 4 , 656 (2008) 2nd AtMol meeting, January 2012

VG

(mV)

Vb

(mV

)

300 320 340 360

40

30

20

10

0

-10

-20

-30

-40 0

0.2

0.4

0.6

dI/dVb ( S)13G14

EC = 31 meV

Vb = 40 mV

320 340 360 3800

10

20

30

I SD (

nA

)

VG (mV)

Excited electronic states of a given charge As dopant

2nd AtMol meeting, January 2012 7

Physical realization of a cascade of two full binary adders

J.A. Mol, J. Verduijn, R. D. Levine, F. Remacle and S. Rogge, PNAS, 108, 13969 (2011).

M. Klein, G. P. Lansbergen, J. A. Mol, S. Rogge, R. D. Levine, and F. Remacle, ChemPhysChem. 10: 162-173, 2009.

• multivalued logic scheme • CMOS compatible • scalable • each full addition requires 4 transistors reduces the number of switches by a factor 7

1 . SAT : half addition Ai + Bi 2. CIB : FET + load resistor : Vi is the arithmetic sum Ai + Bi + Ci-1 3. A SET decodes the arithmetic sum to a Boolean variable

Half addition performed by the SAT

2nd AtMol meeting, January 2012 8

•  A and B are encoded as two values of Vb and Vg •  depending on these values,

zero level (0,0) one level (0,1) and (1,0) two levels (1,1)

contribute to the current

half addition

CIB and decoder to Boolean

2nd AtMol meeting, January 2012 9

CIB : carry in buffer , made of •  a load resistor (converts Ii-1 to Vi-1) •  a carry in FET opened if the

arithmetic sum, Vi-1, is larger than 1 (Ci = 1).

•  provides gain

SETi converts the a.s. to a Boolean signal. The conversion is implemented using the periodicity of the SET. Vi is applied to the gate of the SET and gives a current that corresponds to Si

Vi

a.s is a four valued signal

Vi = Ai + Bi + Vi-1

Perspective : engineer molecular structure in Silicon

10 2nd AtMol meeting, January 2012

effective mass model for the two dopant molecule

2nd AtMol meeting, January 2012 11

H t( ) = ! !2

2m"

#2

#x2 +#2

#y2

$%&

'()+ !

2

2m||

#2

#z2

*

+,,

-

.//+ eF t( ) 0r !

i=1

2

1 e2

2Si x ! xi( )2+ y2 + z ! zi( )2

+i=1

2

1 Qe2

2Si x ! xi( )2+ y2 + z ! zi( )2

! Qe2

42Siz

Time –dependent Hamiltonian is solved on a 3D grid

m! = 0.191me

m|| = 0.916me

Q = !SiO2 " !Si( ) !SiO2 + !Si( ) !Si = 11.4!SiO2 = 3.8

Y. Yan, J. A. Mol, J. Verduijn, S. Rogge, R. D. Levine, and F. Remacle, J. Phys. Chem. C 114: 20380-20386, 2010.

Control of the localization of the charge by a static gate field

2nd AtMol meeting, January 2012 12

!

Fx=0

Fx= 0.01 kV

GS

First excited state

hetero nuclear dopant molecule

Cyclable full adder implemented on dopant molecule addressed by a pulse gate voltage

13

initial state

voltage pulse

XOR int sum

AND (c1)

INH

L+R (0) 0 L+R (0) 0 0

L+R (0) 1 LR+ (1) 0 1

LR+ (1) 0 LR+ (1) 0 0

LR+ (1) 1 L+R (0) 1 0

int sum voltage pulse

XOR final sum

AND (c2)

INH

L+R (0) 0 L+R (0) 0 0

L+R (0) 1 LR+ (1) 0 1

LR+ (1) 0 LR+ (1) 0 0

LR+ (1) 1 L+R (0) 1 0

first half addition

second half addition

AND : charge on right at Fmax INH : charge on left at Fmax

first half addition second half addition

2nd AtMol meeting, January 2012

Y. Yan, J. A. Mol, J. Verduijn, S. Rogge, R. D. Levine, and F. Remacle, J. Phys. Chem. C 114: 20380-20386, 2010.

Multivalued logic : implementation of ternary logic circuits

14

A ternary multiplier on a Si NP

!100nm

_____ 7: (a) _____TEM __ ______ SP1 _____ __ _____ ______. (b) _____ ____ __ ____ ______ ____ ______ ___ ______ ___ _______ ______ SP1. ___ AFM ______ _____ _____ _____ __ ___ ___ ____. _____ _____ _____

_____ EFM.

SiSi

SiOSiO 22

100nm

_____ 7: (a) _____TEM __ ______ SP1 _____ __ _____ ______. (b) _____ ____ __ ____ ______ ____ ______ ___ ______ ___ _______ ______ SP1. ___ AFM ______ _____ _____ _____ __ ___ ___ ____. _____ _____ _____

_____ EFM.

SiSi

SiOSiO 22

SiSi

SiOSiO 22

! I. Medalsy, M. Klein, A. Heyman, O. Shoseyov, F. Remacle, R. D. Levine, and D. Porath, Nature Nanotechnology 5: 451-457, 2010.

2nd AtMol meeting, January 2012

scalable room temperature

2nd AtMol meeting, January 2012 15

Ternary multiplier on a single dopant atom in a transistor

multi -1 0 1 -1 1 0 -1 0 0 0 0 1 -1 0 1

transconductance map

dopant

QD

fully CMOS compatible read out procedure

G. P. Lansbergen, M. Klein, S. Rogge, R. D. Levine and F. Remacle. Applied Physics Letters 2010, 96, 043107

dIdVg

Scheme for the balanced ternary addition

2nd AtMol meeting, January 2012 16

d = tii=0

n

! 3ia n trit number, tntn-1...t0 corresponds to the decimal number d :

tcarry = d 3[ ]

z = -1 z = 1 z = 0

addition : d = x + y + z

sum   1   0   1  1   0   1   1  0   1   0   1  1   1   1   0  

carry   1   0   1  1   0   0   1  0   0   0   0  1   1   0   0  

sum   1   0   1  1   1   0   1  0   1   1   0  1   0   1   1  

sum   1   0   1  1   1   1   0  0   0   1   1  1   1   0   1  

carry   1   0   1  1   0   1   1  0   0   0   1  1   0   0   0  

carry   1   0   1  1   0   0   0  0   1   0   0  1   1   1   0  

tsum = d ! tcarry3

Full ternary adder on a MOSSET device Metal on insulator SET

17 2nd AtMol meeting, January 2012

J. A. Mol, J. v. d. Heijden, J. Verduijn, M. Klein, F. Remacle, and S. Rogge, Appl. Phys. Lett., 99, 263109, 2011.

three gates : top, side and back gate for the top and the side gate : applying an alternating (AC) VB leads to negative, nul or positive current.

Balanced ternary adder

2nd AtMol meeting, January 2012 18

•  cascadable •  scalable •  process three

ternary numbers •  inherently ternary

x and y are mapped to the top and the side gates. z is mapped in the value of the back gate

reading of the negative of the sum

reading of the negative of the carry out

changing the value of the back gate

Implementing a search algorithm addressing a SAT with a pulsed gate voltage

2nd AtMol meeting, January 2012 19

Aim : identifying one of the four functions of one bit

x F1(x) F2(x) F3(x) F4(x) 0 0 1 0 1 1 0 1 1 0

Using a quasiclassical algorithm, we can identifying which function of one bit has been computed (by the Oracle) by the oracle in one query.

B. Fresch, J. Verduijn, J. A. Mol, S. Rogge, and F. Remacle, 2012, submitted

Experimental set-up

2nd AtMol meeting, January 2012 20

!

Kinetic description of the relaxation between the two states

2nd AtMol meeting, January 2012 21

K t( ) =! "GS ,R + "GS ,L( ) W "R,GS + " L,GS( )

0 ! "ES ,R + "ES ,L +W( ) "R,ES + " L,ES( )"GS ,R + "GS ,L( ) "ES ,R + "ES ,L( ) ! "R,GS + " L,GS + "R,ES + " L,ES( )

#

$

%%%%%

&

'

(((((

P = PGS , PES , P0{ }

W : relaxation rate between the GS and the ES induced by coupling to the phonons

dP t( ) dt = K t( )P t( )

P0 = 1! PGS ! PES

one electron at the time on the SAT

Four double pulse profile are used to encode the four functions

2nd AtMol meeting, January 2012 22

!

output : stationary current

2nd AtMol meeting, January 2012 23

I T( ) = e n

TT

T = tprep + t1 + t2 + treset

is the average number of electrons tunneling through the SAT during T n

T

nT= ! t( ) "P t( )

0

T#treset

$ dt + nreset

= dt0

T#treset

$ !GS ,R t( )PGS t( ) + !ES ,R t( )PES t( )( ) + nreset

! t( ) " !GS ,R ,!ES ,R ,0( )

Computing the four functions

2nd AtMol meeting, January 2012 24

x = 1 PGS 0( ) = 1

x = 0 P0 0( ) = 1

realized by applying Vg =VH for tprep

realized by applying by applying VL to empty the dot

!Purely classical identification scheme requires two queries

one query identification using a quasiclassical scheme

2nd AtMol meeting, January 2012 25

Prepare an initial probability vector that is a superposition of PGS and P0

canonical basis :

e1 =100

!

"

##

$

%

&&

e2 =010

!

"

##

$

%

&&

e2 =001

!

"

##

$

%

&&

PGS

PES

P0

!

"

###

$

%

&&&

P 0( ) = c1e1 + c3e3 ! c1 x = 1"# $% + c3 x = 0"# $%

The kinetic scheme is linear, the general solution is

P t( ) =! t( )c ! t( ) = e1 t( ),e2 t( ),e3 t( )"# $%

The output is linear too

nT= c1 n

T

x=1+ c3 n

T

x=0

using a superposition, one can in one query

2nd AtMol meeting, January 2012 26

!

•  solve the Deutsch problem : is the function balanced or constant ? •  identify the function : one out of 4 possibilities

Concluding remarks •  Multi-valued variables are inherent to the

molecular and nanoscale. •  SAT's are CMOS compatible (no problem with

undefined contact, interfacing with the macroscopic world).

•  Atomic scale deterministic doping allows to reduce the variability problem.

•  Quasiclassical parallelism can be implemented in the solid state using pulsed gate voltages.

2nd AtMol meeting, January 2012 27