Copyright@Dawin Electronics Corp. All right reserved

DM2G150SH6NAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

DescriptionDAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are significant portion of the total losses.

Features High Speed Switching BVCES = 600V Low Conduction Loss : VCE(sat) = 2.1V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10uS at TC=100 Reduced EMI and RFI Isolation Type Package

ApplicationsMotor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS

Absolute Maximum Ratings @ Tj=25(Per Leg)

Symbol Parameter Ratings UnitConditions

1/7

Equivalent Circuit

Equivalent Circuit and Package

Package : 7DM-2 Series

Please see the package out line information

VCES

VGES

IC

ICM (1)

IF

IFM

TSC

PD

Tj

Tstg

Viso

TL

Collector-Emitter VoltageGate-Emitter Voltage

Collector Current

Pulsed Collector Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Isolation Voltage Maximum Lead Temp. for solderingPurposes, 1/8” from case for 9 secondsMounting screw Torque :M6Power terminals screw Torque :M5

600±20

175

150

300

150

300

10

595

-40 ~ 150

-40 ~ 125

2500

260

4.0

2.0

V

V

A

A

A

A

A

uS

W

V

N.m

N.m

--

Tc = 25

Tc =80

-

Tc = 100

-

Tc = 100

Tc = 25

-

-

AC 1 minute

-

-

High Power Rugged Type IGBT Module

67

54

① ② ③

Note : (1) Repetitive rating : Pulse width limited by max. junction temperature

Copyright@Dawin Electronics Corp. All right reserved

DM2G150SH6NAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

2/7

Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified)

Symbol ParameterValues

UnitConditionsMin. Typ. Max.

C - E Breakdown Voltage

Temperature Coeff. of

Breakdown Voltage

G - E threshold voltage

Collector cutoff Current

G - E leakage Current

Collector to Emitter

saturation voltage

Turn on delay time

Turn on rise time

Turn off delay time

Turn off fall time

Turn on Switching Loss

Turn off Switching Loss

Total Switching Loss

Short Circuit Withstand Time

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

600

-

5.0

-

-

-

-

-

-

-

-

-

-

-

10

-

-

-

-

0.6

6.5

-

-

2.1

2.4

70

80

115

120

2.5

4.9

7.4

-

460

130

190

-

-

8.5

250

±150

2.9

-

-

-

-

220

-

-

-

-

-

-

-

V

V/

V

uA

nA

V

V

nS

nS

nS

nS

mJ

mJ

mJ

uS

nC

nC

nC

VGE = 0V , IC = 250uA

VGE = 0V , IC = 1.0mA

IC =150mA , VCE = VGE

VCE = 600V , VGE = 0V

VGE =±20V

IC=150A, VGE=15V @TC= 25

IC=150A, VGE=15V @TC=100

VCC = 300V , IC =150A

VGE = ±15V

RG = 5.1Ω

Inductive Load, @TC = 25

VCC = 300V, VGE = ±15V

@TC = 100

VCC = 300V

VGE =± 15V

IC = 150A

BVCES

ΔBVCES/

ΔTJ

VGE(th)

ICES

IGES

VCE(sat)

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tsc

Qg

Qge

Qgc

Copyright@Dawin Electronics Corp. All right reserved

DM2G150SH6NAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

3/7

Electrical Characteristics of FRD @ TC=25 (unless otherwise specified)

Symbol ParameterValues

UnitConditionsMin. Typ. Max.

IF=150A

IF=150A, VR=300V

di/dt= -300A/uS

Tc =25

Tc =100

Tc =25

Tc =100

Tc =25

Tc =100

Tc =25

Tc =100

Diode Forward Voltage

Diode Reverse

Recovery Time

Diode Peak Reverse

Recovery Current

Diode Reverse

Recovery Charge

VFM

trr

Irr

Qrr

-

-

-

-

-

-

-

-

1.6

1.7

120

140

30

47

2400

3290

2.1

-

140

-

45

-

3150

-

V

nS

A

nC

Thermal Characteristics and Weight

Symbol ParameterValues

UnitConditionsMin. Typ. Max.

Junction-to-Case(IGBT Part, Per 1/2 Module)

Junction-to-Case(DIODE Part, Per 1/2 Module)

Case-to-Sink ( Conductive grease applied)

Weight of Module

/W

/W

/W

g

-

-

-

-

0.21

0.48

-

250

-

-

0.045

-

RθJC

RθJC

RθCS

Weight

Copyright@Dawin Electronics Corp. All right reserved

DM2G150SH6NAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

0

50

100

150

200

250

300

0 1 2 3 4 5 6 7 80

50

100

150

200

250

300

0 1 2 3 4 5 6 7 8

0

50

100

150

200

250

300

0 1 2 3 4 5 6 7 8

0

2

4

6

8

10

12

14

16

18

20

0 4 8 12 16 20

0

2

4

6

8

10

12

14

16

18

20

0 4 8 12 16 20

4/7

Performance Curves

Collector – Emitter Voltage, VCE(sat) [V]

Col

lect

or C

urre

nt,

I C[A

]

Collector – Emitter Voltage, VCE(sat) [V]C

olle

ctor

Cur

rent

, I C

[A]

Collector – Emitter Voltage, VCE(sat) [V]

Col

lect

or C

urre

nt,

I C[A

]

Fig 1. Typical Output characteristics

Fig 3. Typical Saturation Voltagecharacteristics

Fig 4. Load Current vs. Frequency

Fig 5. Typical Saturation Voltage vs. VGE

Fig 2. Typical Output characteristics

Fig 6. Typical Saturation Voltage vs. VGE

20V

15V12V

VGE= 10V

Common EmitterTc= 25

20V15V

12V

VGE= 10V

Common EmitterTc= 125

Gate – Emitter Voltage, VGE [V]

Col

lect

or –

Em

itter

Vol

tage

, V C

E(s

at)[V

] Common EmitterTC=25

200A150A

IC=100A

Common EmitterTC=125

200A150A

IC=100A

Gate – Emitter Voltage, VGE [V]

Col

lect

or –

Em

itter

Vol

tage

, V C

E(s

at)[V

]

TC=125

TC=25

0

20

40

60

80

100

120

140

160

180

200

0.1 1 10 100 1000

Load

C

urre

nt [

A]

Frequency [KHz]

Duty cycle = 50%TC=125Power Dissipation = 160W

Copyright@Dawin Electronics Corp. All right reserved

DM2G150SH6NAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

0

30

60

90

120

150

180

210

0 20 40 60 80 100 120 140 160

0.001

0.01

0.1

1

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

IGBT : DIODE :TC=25

5/7

Fig 7. Gate Charge Characteristics Fig 8. Transient Thermal Impedance

Col

lect

or C

urre

nt,

I C[A

]

Collector-Emitter Voltage, VCE [V]

Fig 9. RBSOA CharacteristicCollector-Emitter Voltage, VCE [V]

Fig 10. SCSOA Characteristic

Col

lect

or C

urre

nt,

I C[A

]

Gat

e-E

mitt

er V

olta

ge ,

V GE

[V]

Gate Charge, Qg [nc] Rectangular Pulse Duration [sec]Th

erm

al R

espo

nse

Zthj

c [

/W]

Case Temperature, Tc [ ]

Col

lect

or C

urre

nt ,

Ic [

A ]

Fig 12. rated Current vs. Case Temperature

0

3

6

9

12

15

0 100 200 300 400 500

Common EmitterRL = 5.1ΩTC = 25

Vcc=300V

1

10

100

1000

0 100 200 300 400 500 600 700

Single Non-repetitive Pulse Tj≤125VGE = 15VRG = 5.1Ω

TJ ≤ 150VGE ≥15V

0.1

1

10

100

1000

0.1 1 10 100 1000

Single Non-repetitive Pulse Tc = 25Curves must be deratedlinerarly with increaseIn temperature

DC Operation

1ms

100us

50us

Col

lect

or C

urre

nt,

I C[A

]

Collector-Emitter Voltage, VCE [V]

Fig11. SOA characteristics

Ic MAX. (Pulsed)

Ic MAX. (Continuous)

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 100 200 300 400 500 600 700

Copyright@Dawin Electronics Corp. All right reserved

DM2G150SH6NAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

0

50

100

150

200

250

300

0 1 2 3 4

Fig 13. Power Dissipation vs. Case Temperature

Pow

er D

issi

patio

n ,P

D[ W

]

Case Temperature, Tc [ ]

Fig 14. Forward characteristicsForward Drop Voltage, VF [V]

Forw

ard

Cur

rent

, I F

[A]

TC=125

TC=25

6/7

0

100

200

300

400

500

600

0 20 40 60 80 100 120 140 160

TJ ≤ 150VGE ≥15V

Copyright@Dawin Electronics Corp. All right reserved

DM2G150SH6NAug. 2009DAWIN ElectronicsD WTMDAWIN ElectronicsD WTM

Package Out Line Information

7/7

7DM-2