Peculiar bonding associated with atomic doping and hidden honeycombs in borophene

Chi-Cheng Lee,1 Baojie Feng,1 Marie D’angelo,1, 2 Ryu Yukawa,3 Ro-Ya Liu,1

Takahiro Kondo,4, 5, 6 Hiroshi Kumigashira,3 Iwao Matsuda,1 and Taisuke Ozaki1

1Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan2Institut des Nanosciences de Paris, Universite Pierre et Marie Curie, CNRS 4, place Jussieu, 75005 Paris, France

3Institute of Materials Structure Science, High Energy AcceleratorResearch Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan

4Tsukuba Research Center for Energy Materials Science (TREMS),University of Tsukuba, Tsukuba, 305-8571, Japan

5Division of Materials Science, Faculty of Pure and Applied Sciences,University of Tsukuba, Tsukuba 305-8573, Japan6Materials Research Center for Element Strategy,

Tokyo Institute of Technology, Yokohama 226-8503, Japan(Dated: February 8, 2018)

Engineering atomic-scale structures allows great manipulation of physical properties and chemicalprocesses for advanced technology. We show that the B atoms deployed at the centers of honeycombsin boron sheets, borophene, behave as nearly perfect electron donors for filling the graphitic σbonding states without forming additional in-plane bonds by first-principles calculations. The diluteelectron density distribution owing to the weak bonding surrounding the center atoms provideseasier atomic-scale engineering and is highly tunable via in-plane strain, promising for practicalapplications, such as modulating the extraordinarily high thermal conductance that exceeds thereported value in graphene. The hidden honeycomb bonding structure suggests an unusual energysequence of core electrons that has been verified by our high-resolution core-level photoelectronspectroscopy measurements. With the experimental and theoretical evidence, we demonstrate thatborophene exhibits a peculiar bonding structure and is distinctive among two-dimensional materials.

Graphene, the representative of two-dimensional mate-rials, has been proposed for various applications, such asnanoelectronics and optoelectronics for the next genera-tion of technology[1–3]. Not only hosting massless Diracfermions makes it attractive but also the robust bond-ing giving a remarkable stiffness renders the honeycombstructure one of the most attractive patterns in materialsscience[1–3]. Similar to carbon, boron has been found toexist in a variety of structures associated with multicenterbonding, where the bonds involve multiple atoms shar-ing a certain amount of electrons, ranging from clustersto bulks[4–6]. The flexible bonding nature provides thedegrees of freedom of atomic-scale engineering for greatmanipulation of physical properties and chemical pro-cesses, especially in the layer forms that can be grown ondiverse substrates. The boron layer exhibits many inter-esting properties. For example, the graphitic boron layerin MgB2 has set a remarkable record for the superconduc-tivity transition temperature (Tc ∼40K) among simplebinary compounds[7], making the two-dimensional boronlayer (Tc ∼20K) lastingly attractive for realizing bettersuperconductors[8, 9]. Exploration of new boron com-pounds to keep pace with the graphene technology hasalso been ongoing[10]. Recently two-dimensional boronsheets, borophene, have attracted great attention dueto the successful growth on a metallic substrate[11–22].Dirac cones were also evidenced in borophene[23–25].These make borophene another promising candidate formanufacturing advanced nanoscale devices. It is theninteresting to unravel the bonding nature of borophene,

which is composed of mixtures of honeycombs and tri-angles, and to propose useful applications with physicalproperties superior to graphene.

The structures of borophene can be considered as intro-ducing either vacancies, dubbed as atomic holes, or buck-ling to the prototypical planar triangular structure[11–13]. Alternatively, the atomic-hole structures can beviewed as adding and/or removing B atoms based on thegraphitic honeycombs[11, 12]. The intrinsic differencebetween the boron and carbon versions of honeycombs isthat four valence electrons per carbon atom optimally fillthe bonding σ and π bands with exactly empty antibond-ing σ∗ and π∗ bands separated by a gap and Dirac pointsat the Fermi level, respectively, in graphene, whereasboron with one less electron cannot fully fill all bond-ing states[11–25]. Hence, the density of atomic holesis intimately associated with an electron-doping mech-anism between the two-center and three-center bond-ing for stabilizing borophene by noting that the three-center bonding in the triangular structure possesses ex-cess electrons, which has been demonstrated by the first-principles calculations[11, 12]. The structures, density ofstates, and schematic pictures of band filling of honey-comb and β12 sheets of borophene are shown in Fig. 1.The β12 borophene that has been experimentally realizedand theoretically explored very recently allows us to ver-ify the doping mechanism and bonding nature predictedfor the boron sheets in general[11, 12].

In this Communication, we focus on β12 borophenethat contains honeycombs plus additional B atoms at the

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honeycomb centers and has been experimentally realizedon Ag(111)[24]. The relaxed structure is shown in Fig. 1(c), where the center atoms are present in one columnalong the zigzag but absent in the next column. We willdemonstrate that there exist novel effects associated withatomic doping by our first-principles calculations. In par-ticular, we will show the center atoms behave as nearlyperfect electron donors in filling the honeycomb σ stateswithout forming new in-plane bonds, allowing easier en-gineering of atomic-scale structures and great tunabilityof the surrounding charge density distribution. A pecu-liar π bond shared by the center atom and the six atomsforming the honeycomb is found, which is beyond the pic-ture of mixed two-center and three-center bonding andcan be considered as six-center bonding by viewing thecenter atom as a pure electron reservoir. Finally, we willprovide experimental evidence of the hidden honeycombbonding structure in borophene. The experimental andcomputational details can be found elsewhere[26].

The first-principles band structures of fully relaxed β12borophene and the corresponding honeycomb version areshown in Fig. 2 (a). The relaxed lattice constant of hon-eycomb sheet is just ∼0.4% shorter than that of β12 sheetso that the presence of center atoms does not modify thehoneycomb size significantly. As expected, the σ bands

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orbital. The band dispersion of π′ orbital is indicated in (a).

are not fully filled in the honeycomb structure, as evi-denced by the downward bands right above the Fermilevel at Γ. On the other hand, the σ bands becomenearly fully filled in β12 borophene as an evidence of elec-tron doping via the center B atoms. The crossing rightabove the Fermi level at the point located at the 2/3 ofΓ to X path corresponds to the Dirac point at K in theprimitive Brillouin zone of honeycomb borophene. Sucha Dirac cone also exists in β12 borophene and the Diracfermions can be observed in angle-resolved photoelectronspectroscopy experiments by further electron doping[24].

To unravel the bonding nature in β12 borophene,the maximally localized Wannier functions[27, 28] trans-formed from the seven dominant occupied bands and thereproduced bands are presented in Figs. 2 (b) and (a),respectively. Six σ orbitals that are translationally in-variant can be seen forming the honeycombs, revealingthe hidden honeycomb bonding structure that has alsobeen found in other boron sheets[12]. Another evidenceis the similar electron density distribution between hon-eycomb and β12 sheets as shown in Figs. 3 (a) and (b),respectively. Only dilute charge density can be foundaround the center atom with a larger area of the honey-comb isosurface of charge density in β12 borophene, re-flecting that the center atom behaves as a nearly perfectelectron donor for filling the honeycomb σ bonds.

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FIG. 3. Isosurfaces of charge density at 0.125 e/Bohr3 in planar (a) honeycomb and (b) relaxed β12 borophene. Isosurfaces ofcharge density at 0.12 e/Bohr3 in (c) planar, (d) shorter-wavelength wavy, and (e) longer-wavelength wavy borophene in thestrained in-plane unit cells commensurate with β12 borophene on Ag(111) whose isosurface is shown in (g). (f) The energiesof Fermi levels (EF ), core levels (core), and upper bound (σupper) and lower bound (σlower) of σ bands at Γ of freestandingstrained β12 borophene and β12 borophene on Ag(111) are sketched. (h) First-principles binding energies of B 1s orbitals atdifferent sites weighted by the associated number of atoms in the unit cells. (i) Measured high-resolution core-level photoelectronspectroscopy spectra of β12 borophene on Ag(111) together with the fitted components on top of the theoretical result.

The remaining Wannier function can be identified asthe pz orbital of the dopant atom hybridizing with neigh-boring pz orbitals that can be considered as six-center (orseven-center by taking the dopant atom into account)bonding filled by two electrons in the space orthogonalto the σ bonds, corresponding to the π′ band with agap to the other pz-derived bands as shown in Fig. 2(a). The other partially filled bands that are not repre-sented by the Wannier functions originate from the pz or-bitals of honeycomb B atoms. Specifically, two π and twoπ∗ bands can be obtained in the honeycomb boropheneby doubling the unit cell. Adding one center atom thatbreaks the translational symmetry of honeycomb struc-ture gives five pz bands from the five mutually hybridizedpz orbitals. As shown in Fig. 1, the degeneracy in the en-ergy distribution of the original π bands is lifted and anew lower-energy π contribution, the π′ band, can beidentified. The additional band is found to hybridizemore with the original two π∗ bands, leading to threenearly fully unfilled π∗ + π′∗ bands in β12 borophene.

The dopant atoms are solely bonded by the π′ orbitals.Besides the weak π′ bonding, dilute in-plane charge den-sity can still spread surrounding the center atoms re-flected by the deformed σ1, σ2, σ4, and σ5 orbitals incomparison to the σ3 and σ6 orbitals having no tails ap-proaching the honeycomb center in Fig. 2 (b). The weakπ′ bond and the dilute in-plane charge density imply ahighly tunable electron density distribution surrounding

the center atom via strain, which could directly affectthe properties of the electronic structure and phonons.In Fig. 3 (c), we show the electron density distributionin a strained unit cell, where the corresponding (3×5)unit cell can fit (5×6) Ag(111) in the rectangular su-percell. As expected, the electron is distributed morealong the shorter bonds and less along the longer bondsmeasured from the center atom, building a new channelhaving an interesting one-dimensional electron densitydistribution along the shorter-bond direction under non-uniform strain.

Substrate-induced undulations in β12 borophene havebeen observed on Ag(111) with existence of additionalprotruding Ag atoms[14]. Here we show that strain canalso induce undulations without the presence of the sub-strate by focusing on sinusoidal sheets at two differentwavelengths. While the two wavy structures have simi-lar total energies, their total energies are lower than thatof the strained planar sheet by the order of 10 meV peratom as an energy gain from relaxing the imposed in-plane stress. As shown in Figs. 3 (d) and (e), the fea-ture of one-dimensional electron density distribution canalso be found. This is useful for practical applicationsbecause charge density around the center atom can becontrolled by the in-plane strain and is robust againstundulations. With the presence of silver, the interfacialcohesive energy of borophene on Ag(111)[18], ∼0.17 eVper B atom, is larger than the energy gain from the si-

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nusoidal forms. As a result, a nearly planar sheet can befound as shown in Fig. 3 (g), where the feature of strain-induced one-dimensional electron density distribution isagain observed. In addition, prominent honeycomb elec-tron density distribution is always observed in all thecases, showing the robustness of the honeycomb bondingstructure against structural flexibility.

The peculiar honeycomb bonding implies an unusualenergy sequence of core electrons that can be verified byhigh-resolution photoelectron spectroscopy experiments.The coordination number of center B atoms is six, wheremuch stronger Coulomb repulsion and therefore shallowersite energy of B 1s orbitals to the Fermi level can beexpected. In the independent-electron picture, the core-level binding energy is the energy difference between thesite energy and the Fermi level. So the binding energyof B 1s orbital at the center atom should be the smallestamong all the B atoms. However, the unexpectedly di-lute charge density has been found to surround the cen-ter atom in the graphitic honeycomb bonding. Conse-quently, the binding energy belonging to the center atomsshould be the largest instead of the smallest.

To confirm the unusual energy sequence, the calcu-lated absolute binding energies of three distinct B 1s or-bitals, denoted as B1, B2, and B3 shown in Fig. 3 h,are listed in Table I. In all cases, including the relaxedplanar sheet, strained planar and undulation sheets, andthe nearly planar sheet on Ag(111), the B1 1s bindingenergies are prominently larger than those at the othersites. Comparing to the planar sheet, the undulationsgive larger binding energy for each respective B atom asa result of longer bond lengths reducing both Coulombrepulsion and in-plane strain. The similar electron den-sity distribution of β12 borophene on Ag(111) preservesthe same energy sequence as in the freestanding cases.Due to the charge transfer from Ag(111) to boropheneand the interaction between them[17, 24], the relativelyhigher Fermi level in the presence of silver gives largerbinding energy as illustrated in Fig. 3 (f). The calcu-lated single-particle energy of the lowest B1 1s level andthe Fermi level before being shifted to the energy zeroin the strained borophene are -6.621 and -0.202 Ha, andbecome -6.600 and -0.165 Ha with the presence of silver,respectively, where ∼0.4 eV binding energy is increased.The energy sequence can be further understood by count-ing the number of bonds surrounding the core electronsfollowing the electron density distribution instead of thecoordination number since the number is approximatelyproportional to the strength of Coulomb repulsion. Asshown in Figs. 3 (c), (d), (e), and (g), the numbers ofB1, B2, and B3 are two, four, and three, respectively,perfectly matching the energy sequence listed in Table I.

The experimentally measured B 1s binding energiesthat support the peculiar honeycomb bonding in β12borophene on Ag(111) are presented in Table I and Fig. 3(i), where the prominent higher-energy B1 peak and

TABLE I. Binding energies of B 1s orbitals in relaxed planarβ12 borophene (Relaxed), planar (Strained) and wavy onesin a strained unit cell, and the relaxed one on Ag(111). Thewavelengths of three (Wavy 3) and four (Wavy 4) times thelonger lattice constant are considered. The average valuesare listed for broken symmetry cases together with the fittedcomponents (Exp)[26]. The unit is in eV.

Relaxed Strained Wavy 3 Wavy 4 Ag(111) ExpB1 188.567 188.646 188.789 188.765 188.962 189.538B2 186.331 186.228 186.488 186.496 186.678 187.391B3 186.757 186.946 187.081 187.050 187.412 187.828

lower-energy B2 and B3 peaks can be clearly observed.To fit the measured raw data, at least one additionalsmall peak is required. Although ∼0.5 eV deviation couldbe obtained in the first-principles calculations of absolutebinding energies[29, 30], it is possible that additional de-grees of freedom not considered in the supercell calcula-tions, such as defects, randomly distributed center atoms,undulations, domain boundaries[16, 17], and other strain-relaxed forms could give better agreement between the-ory and experiment. While such exploration is interest-ing, the universal energy sequence of the core electronscannot be easily altered due to the demonstrated robust-ness of the honeycomb bonding structure, and the threemajor peaks in the raw data should mainly come fromB1, B2, and B3 of the extended β12 borophene.

Finally, we mention that the buckled triangular andβ12 sheets of borophene have extraordinarily high lat-tice thermal conductance exceeding that of graphene[21].In buckled borophene, the electron density distributionalong the perfect one-dimensional chain is found to be re-sponsible for the high-frequency phonon-mediated ther-mal transport[21]. The tunable dilute electron densitydistribution that we have evidenced for β12 borophenemay allow modulating the low-frequency phonons forhighly tunable anisotropic thermal conductance via in-plane strain. Moreover, the one-dimensional electrondensity distribution demonstrated in Fig. 3 resemblesthat of buckled borophene, implying that an even higherthermal conductance can be realized under strain, whichcan be switched off by opposite strain. More applicationsassociated with this flexible directional bonding, such asenhancing the electron-phonon coupling for better super-conductors, are also expected.

In conclusion, we have identified a peculiar bondingstructure in β12 borophene. The center B atom actsas a nearly perfect electron donor to fill the honey-comb σ bonds in β12 borophene. The newly introducedbond to the honeycomb structure is just a weak π-typesix-center bond without additional stronger in-plane σbonds, which greatly facilitates atomic-scale engineeringassociated with the center atoms. The associated un-usual core-level binding energy sequence owing to theunexpectedly dilute charge density surrounding the cen-

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ter atom has been verified by both first-principles calcu-lations and high-resolution core-level photoelectron spec-troscopy measurements. The weak π-type bonding anddilute in-plane charge density surrounding the centeratom allow a highly tunable electron density distribu-tion. A new channel having one-dimensional electrondensity distribution under in-plane strain is found androbust against undulations and the presence of a metallicsubstrate, useful for practical applications, such as mod-ulating the anisotropic high thermal conductivity. Moreelectron density distribution could be realized with differ-ent deployments of atomic holes, showing a playgroundfor engineering and designing advanced devices.

This work was supported by Priority Issue (creation ofnew functional devices and high-performance materialsto support next-generation industries) to be tackled byusing Post ‘K’ Computer, Ministry of Education, Cul-ture, Sports, Science and Technology, Japan.

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