Test Cost ChallengesTest Cost Challenges

1

November 11, 2009Chang Kim (김창식)

Where we are !!!

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Number of Die per wafer exponentially increasing!!

150mm 200mm 300mm 450mm

Bigger Wafer Diameter

1985 1990 1995 2000 2005 2010 2015150mm 200mm 300mm 450mm

Moore’s Law

32nm process Technology Ready

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32nm process Technology Ready

History of DRAM Price per Megabit (Source: DQ)

• DRAM has maintained a 32% average reduction per year in• DRAM has maintained a 32% average reduction per year in Price per Megabit, over 34 years!

• Over four years this is approximately a 5x reduction in price

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Over four years, this is approximately a 5x reduction in price per Megabit

New Trend has been increasing complexity

M d lTSV

Module

MCPPOP

SOC + Memory + Analog

POP

5

SIP

Higher Speed, Higher Density, More Core

Higher Density

Core #1

Core #2

CRF GDDR5

Core #3

Multi CoreHigher Speed

6

Multi Core

Known Good Die

TSV Module

KGD required

MCP POPSpeed, Functionality, Reliability

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SIPIt’s a dream!?

Known Good Die

TSV Module

but still MGD..

MCP POPMaybe Good Die?

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SIPIDEA!!!

Overall ATE Market

ATE TAM History - Worldwide

6,5746,000

7,000

3 831

5,232

4,233

5,136

4,3204 000

5,000

($M

)

Memory ATE TAMSOC ATE TAMATE TAM

3,831

2,6032,348

3,4303,0743,000

4,000

Reve

nue

(

E i C i i

1,000

2,000 Economic Crisis

-1999 2000 2001 2002 2003 2004 2005 2006 2007 2008

IT Bubble

9

Solution for Test COST

Higher Parallelism• Higher Parallelism

C t• Concurrent

P t l A• Protocol Aware

P Pi PMU• Per-Pin PMU

• Single Platform

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History of Multi Parallel Testing History of Multi Parallel Testing

64-site 256-site 512-site128-siteDRAM

2000 2002 2004 2006 2008 2010

2 or 4-site 16-site 32-site 64-site8-siteSOC

DRAM

• Multi-site capability is the key strategy to achieve low cost of test

• Test technology has been aligned to high site count parallel test strategy

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How to achieve Higher Parallelism How to achieve Higher Parallelism

SPCSmall Pin Count

IBCI l Bi CInternal Bit Compress

BOSTBOSTBuild off self-test

BISTBuilt-in self-test

DFTDesign for Testability

Today

Memory >512 site

Channel SharingATESOC >32 site

Channel SharingTIU

Test Interface Unit

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ATE Requirement for Higher Parallelism

Track Serial Data Rates - PCIe, SATAI P t D it

Track Serial Data Rates - PCIe, SATAI P t D it

New Higher Density Options for higher-site parallel Higher Performance for new technology

DigitalChannels

DigitalChannels

Increase Port DensityIncrease Port Density

Track HS DRAM Data RatesDDR2 DDR3/4 GDDR5Track HS DRAM Data RatesDDR2 DDR3/4 GDDR5

Increase Digital Pin Density. Track Mobile DDR Rates. ‘Protocol Aware’ features

Increase Digital Pin Density. Track Mobile DDR Rates. ‘Protocol Aware’ features

ChannelsChannels DDR2 DDR3/4 GDDR5DDR2 DDR3/4 GDDR5

AnalogChannelsAnalog

Channels

Track converter resolution and SNRCombine Audio, Baseband, Video capabilities

Increase so rce and digiti er densit

Track converter resolution and SNRCombine Audio, Baseband, Video capabilities

Increase so rce and digiti er densitIncrease source and digitizer densityIncrease source and digitizer density

Higher Density Power Suppliesfor Parallel Memory and SOC Test

Higher Density Power Suppliesfor Parallel Memory and SOC Test

DPSChannels

DPSChannels Higher Density DC (Per Pin PMU)

for Integrated Power Management FunctionsHigher Density DC (Per Pin PMU)

for Integrated Power Management Functions

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Solution for Test COST

Higher Parallelism• Higher Parallelism

C t• Concurrent

P t l A• Protocol Aware

P Pi PMU• Per-Pin PMU

• Single Platform

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Concurrent Testing- Device-Centric Test Time Reduction

Parallel test execution of independent functional cores in the device

SerializedFlow

2 LevelsConcurrency

3 LevelsConcurrency

Etc…

Core #1 Core

DUT

2 2 re

3 sts

ow

#1#2

Core #3

Cor

e #1

Te

sts

Cor

e #2

Test

s

Cor

e #1

Te

sts

re

3 sts

Cor

e #2

Test

s

Cor

e #1

Te

sts C

or #3Te

s

Test

Fl#3

*Device must be designed with independent cores

Cor

e #2

Te

sts

s

Co # 3

Tes

Tp

f CO f SOC Sf CO f SOC SC

ore

#3

Test

sBenefits: Reduce COT via parallel test of cores within a SOC or dies within a SIP

Characterize the operation of cores running simultaneouslyReduce Time to Market via re-use of modular test programs

Benefits: Reduce COT via parallel test of cores within a SOC or dies within a SIPCharacterize the operation of cores running simultaneouslyReduce Time to Market via re-use of modular test programs

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educe e o a e a e use o odu a es p og a seduce e o a e a e use o odu a es p og a s

Concurrent Testing - Independent Resources Per-Core

1 536MHz1900MHz

“Tester Slice” per“Tester Slice” per--CoreCore EnvironmentEnvironmentDC

InstrumentsDC

Instruments1.536MHzMicrowaveTransceiver Audio

ConvertersPLL

Instruments

ACInstruments

DigitalInstruments

ACInstruments

DigitalInstruments

9.5MHz 266MHzPMIC DDRInterface

DSP MCU Memory I/F

DigitalInstruments

DSP

DCInstruments

DigitalInstruments

DSP

Synchronous phase start of clocks and patternsComputer

AdvantagesI d d t t t d l t f

Advantages• Independent test development of each core

• Independent timing, signals, resources processing

• Able to synchronize across tests• Able to support concurrency with shared device resources

16 *

resources, processing

Solution for Test COST

Higher Parallelism• Higher Parallelism

C t• Concurrent

P t l A• Protocol Aware

P Pi PMU• Per-Pin PMU

• Single Platform

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Chip Design Evolution

Tim

eD

esig

n T

CPU

Complex SOC

Mobile and B b d

Increasing Chip complexity

Baseaband

18

g p p y

Async Chip Creates Non-Deterministic Test

DD

R6G

bps

DDR Interface

G 1.6

rfac

e

erfa

ce

PCI Express TMDS/HMDIPC

IE In

te

TDM

S In

teGraphics Processorp

16 Lanes2.5Gbps

3 Pairs1.6Gbps

Graphics Data Idle Graphics Data Idle Graphics DataPCI Express

RD Idle WR

Disp Data

DDR Interface

TDMS Interface

RD WR Idle WR Idle

Disp Data Disp Data Disp Data Idle Disp Data

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Async Chip Creates Non-Deterministic Test

DR bp

s

Protocol Synchronization & Communication

Protocol Aware ATEP

rotoco

Protoco

DDR Interface

GD

D1.

6GbProtocol Aware ATE l S

ynchroniza

ol Synchroniz

face

rfac

e

PCI Express TMDS/HMDI

ation & C

omm

zation & Com

PCIE

Inte

rf

TDM

S In

ter

Graphics ProcessorPCI Express

16 Lanes2.5Gbps

TMDS/HMDI3 Pairs

1.6Gbps

munication

mm

unication

T

Stored Response ATE Protocol Level ATEExecute fixed pass/fail vectors Interact with DUT using standard protocols

(PCI-E, I2C, USB, etc)Slave DUT to tester Adapt tester to DUT

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Convert Design Information to Tester Language

Use RTL level commands directly on tester

Protocol Aware attributes of a new solution

• Accommodate Functional Test: less 200DPM• Low test cost• Low test cost

• Fits the normal 5-10sec test model• No massive infrastructure changes

A d t N D t i i• Accommodate Non-Determinism• Minimum: Idle deletion• Preferred: Non-Deterministic Sequence

All h d i i i i d

Just Do It• Allow the device to operate in mission mode

• Reduce Time to Market• User operates at transaction levelp• Operates more like bench fixture• Test time reduced: Several Months Weeks

• Memory solutiony• Design verification through variable frequency for Mobile solution• Reusable application testing instead of SLT

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Solution for Test COST

Higher Parallelism• Higher Parallelism

C t• Concurrent

P t l A• Protocol Aware

P Pi PMU• Per-Pin PMU

• Single Platform

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DC Test Time is Becoming More Critical

Problem: As DRAM makers drive test costs down by reducing test time, DC test becomes a larger percentage of test time

60.0%

t e, C test beco es a a ge pe ce tage o test t e

40.0%

50.0%

me

Big Cost of Test Issue!

Major trends are

30.0%

DC

Tes

t Tim

Historically not a big problemTT Down

parallel-up and test time-down.

10.0%

20.0%% D problem

0.0%50 100 150 200 250 300

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Test Time (sec)

DC Test Cost Solution

DC Test Time is reduced drastically with Today’s solution – fast with no loss of test coverage or reduced quality.

50 0%

60.0%

40.0%

50.0%

Tim

e

Cost of Test Advantage:

20 0%

30.0%

% D

C T

est T

Cost of Test+ DC Test time is very

short+ No loss in DC test

coverage

10.0%

20.0%%

Per-Pin PMU

Shared PMUcoverage

+ Short test time at higher parallelism

0.0%50 100 150 200 250 300

Test Time (sec)

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Test Time (sec)

Solution for Test COST

Higher Parallelism• Higher Parallelism

C t• Concurrent

P t l A• Protocol Aware

P Pi PMU• Per-Pin PMU

• Single Platform

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Single platform Trend

GDDR DRAMGDDRDDR3

FLASHLPDDR Power

DRAM

FLASH PowerLPDDR Power

SOC RFSOC

IMAGE

RFSOC

IMAGE

RF

IMAGE

Multi Platform Single PlatformMulti Platform Single Platform• Optimizing current market requirement

• Easy concept

• Think next generation

• Less Investment

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• Short life cycle time • Long life cycle time (Reuse)

Conclusion - What is the cost saving way!Conclusion - What is the cost saving way!

BOST SLT (실장) ATE

Time to Market

Test Coverage

P iPrice

Upgrade Cost

Engineering toolsEngineering tools

Accuracy

Test Time

Utilization

# of Parallel

Life cycle

• ATE still provides cost effective way and huge benefit !!!

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p y g

Conclusion

• What is test? Cost!

• Cost down 요구는계속증가

• ATE has created new technology and solution. o Higher Parallelismo Concurrento Protocol Awareo Protocol Awareo Per-Pin PMUo Single Platform

• ATE keeps trying to find out a breakthrough!

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Thank you!

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