2sk2479

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MOS FIELD EFFECT TRANSISTO

DESCRIPTION

The 2SK2479 is N-Channel MOS Field Effect Transistor de-

signed for high voltage switching applications.

FEATURES

Low On-Resistance

RDS(on) = 7.5 (VGS = 10 V, ID = 2.0 A)

Low Ciss Ciss = 485 pF TYP.

High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

Drain to Source Voltage VDSS 900 V

Gate to Source Voltage VGSS 30 V

Drain Current (DC) ID(DC) 3.0 A

Drain Current (pulse)* ID(pulse) 8.0 A

Total Power Dissipation (Tc = 25 C) PT1 70 W

Total Power Dissipation (TA = 25 C) PT2 1.5 W

Channel Temperature Tch 150 C

Storage Temperature Tstg 55 to +150 C

Single Avalanche Current** IAS 3.0 A

Single Avalanche Energy** EAS 5.4 mJ

* PW 10 s, Duty Cycle 1 %

** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0

2SK2479

SWITCHINGN-CHANNEL POWER MOS FET

INDUSTRIAL USE

PACKAGE DIMENSIONS

(in millimeters)

Document No. D10271EJ1V0DS00 (1st edition)

Date Published August 1995 PPrinted in Japan

199

DATA SHEET

10.6 MAX.

10.03.00.3

3.6 0.2

5.9

MIN.

15

.5MAX.

6.0

MAX.

12.7

MIN.

1.3 0.2

0.75 0.1

2.542.54

4.8 MAX.

1.3 0.2

0.5 0.2

2.8 0.2

1. Gate2. Drain3. Source4. Fin (Drain)JEDEC: TO-220AB

MP-25 (TO-220)

4

1 2 3

Body

Diode

Source

Drain

Gate

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ELECTRICAL CHARACTERISTICS (TA = 25 C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-State Resistance RDS(on) 5.6 7.5 VGS = 10 V, ID = 2.0 A

Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 0.8 VDS = 20 V, ID = 2.0 A

Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0

Gate to Source Leakage Current IGSS 100 VGS = 30 V, VDS = 0

Input Capacitance Ciss 485 VDS = 10 V

Output Capacitance Coss 75 VGS = 0

Reverse Transfer Capacitance Crss 10 f = 1 MHz

Turn-On Delay Time td(on) 12 ID = 2.0 A

Rise Time tr 5 VGS = 10 V

Turn-Off Delay Time td(off) 35 VDD = 150 V

Fall Time tf 8 RG = 10

Total Gate Charge QG 17 ID = 3.0 A

Gate to Source Charge QGS 3 VDD = 450 V

Gate to Drain Charge QGD 8 VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.0 IF = 3.0 A, VGS = 0

Reverse Recovery Time trr 670 IF = 3.0 A, VGS = 0

Reverse Recovery Charge Qrr 3.0 di/dt = 50 A/ s

UNIT

V

S

A

nA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

C

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

Test Circuit 3 Gate Charge

VGS = 20 - 0 V

PG

RG = 25

50

D.U.T.L

VDD

Test Circuit 1 Avalanche Capability

PG. RG = 10

D.U.T.

RL

VDD

Test Circuit 2 Switching Time

RG

PG.

IG = 2 mA

50

D.U.T.

RL

VDD

IDVDD

IASVDS

BVDSS

Starting Tch

VGS

0

t = 1us

Duty Cycle 1 %

VGSWave Form

IDWave Form

VGS

ID

10 %

10 %

0

0

90 %

90 %

90 %

10 %

VGS (on)

ID

ton toff

td (on) tr td (off) tft

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TYPICAL CHARACTERISTICS (TA = 25 C)

FORWARD BIAS SAFE OPERATING AREA

VDS - Drain to Source Voltage - V

ID-DrainCurrent-A

DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE


ID-DrainCurrent-A

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

ID-DrainCurrent-A

0.1

DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA

TC - Case Temperature - C

dT-PercentageofRatedPower-%

TOTAL POWER DISSIPATION vs.CASE TEMPERATURE

TC - Case Temperature - C

PT-TotalPowerDissipa

tion-W

0 200 20 40 60 80 100 120 140 160

20

40

60

80

100

40 60 80 100 120 140 160

70

60

50

40

30

20

10

0.1

1

1

10

100

10 100 1000

TC = 25 CSingle Pulse

0 20 30 40

5

1.0

10

100Pulsed

VDS = 10 V

10

10

0

Pulsed

5 10 15

ID(pulse)PW

=100s1m

s10ms

RDS(

on)Lim

ited(

atVG

S=10

V)

VGS = 20 V

10 V

8 V

6 V

TA = 25 C

25 C

75 C

125 C

PowerDissipationLim

ited

ID(DC)

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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

rth(t)-TransientThermalResistance-C/W

FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

ID - Drain Current - A

|yfs|-ForwardTransferAdmittance-S

DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - VRDS(on)-DraintoSourceOn-StateResistance-

0 10

DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENT

GATE TO SOURCE CUTOFF VOLTAGE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - C

VGS(off)-GatetoSourceCutoffVoltage-V

ID - Drain Current - ARDS(on)-DraintoSourceOn-StateResistance-

0.1

100

0.01

0.1

1.0

10

1 000

10 000

1 m 10 m 100 m 1 10 100 1 00010 100

VDS= 20 VPulsed

1 0.1

0.1

1.0

10

1.0 10

5

20 30

Pulsed

1.0 100

5

VDS = 10 VID = 1 mA

50 0 50 100 1500

1

Single Pulse

Tc = 25 C

10

Rth(ch-a) = 83.3(C/W)

Rth(ch-c)= 1.79(C/W)

ID = 3 A

1.5 A

0.6 A

TA = 25 C25 C75 C

125 C

5

10

Pulsed

VGS = 10 V

15

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DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - CRDS(on)-DraintoSourceO

n-StateResistance-

CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE


Ciss,Coss,Crss-Capacitance-p

F

050

10

0 50 100 150

VGS = 10 VID = 2 A

1.01.0

10

100

1 000

10 100 1 000

VGS = 0f = 1 MHz

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

Qg - Gate Charge - nC

VDS-Drainto

SourceVoltage-V

0 6 12 18 27

200

400

600

800

2

4

6

8

10

12

14

16

0

Ciss

Crss

Coss

SWITCHING CHARACTERISTICS


td(on),tr,td(off),tf-SwitchingTime

-ns

1.00.1

10

100

1 000

1.0 10 100

VDD = 150 VVGS = 10 VRG = 10

tr

td(off)tftd(on)

SOURCE TO DRAIN DIODEFORWARD VOLTAGE

VSD - Source to Drain Voltage - V

ISD-DiodeForw

ardCurrent-A

0

1

10

100

0.5

Pulsed

1.0 1.5

VGS = 10 V

VGS = 0 V

REVERSE RECOVERY TIME vs.DRAIN CURRENT


trr-ReverseRecoverytime-ns

di/dt = 50 A/ sVGS = 0

100.1

100

1 000

1.0 10 100

ID = 3 A

VDD = 450 V300 V150 V

VGS

VDS

10 000

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SINGLE AVALANCHE CURRENT vs.INDUCTIVE LOAD

L - Inductive Load - H

IAS-SingleAvalancheCurrent-A

SINGLE AVALANCHE ENERGYDERATING FACTOR

Starting Tch - Starting Channel Temperature - C

EnergyDeratingFactor-%

1.0

025

10

100

100 1 m 10 m 100 m

VDD = 150 VVGS = 20 V 0RG = 25

20

80

120

160

50 75 100 125 150

VDD = 150 VRG = 25 VGS = 20 V 0IAS 3.0 A

100

60

40

140

IAS = 3 A

EAS=5.4mJ

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REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

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[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this

document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arisingfrom use of such device. No license, either express, implied or otherwise, is granted under any patents,

copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on

a customer designated quality assurance program for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each

device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact NEC Sales Representative in advance.

Anti-radioactive design is not implemented in this product.

M4 94.11

2sk2479

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