chemistry5

SINGLE CRYSTALSAPPHIREKYOCERA Corporation

Corporate Fine Ceramics Group6 Takeda Tobadono-cho, Fushimi-ku, Kyoto 612-8501, JapanTel: +81-(0)75-604-3441　Fax: +81-(0)75-604-3440

http://www.kyocera.co.jp

<U.S.A>KYOCERA Industrial Ceramics CorporationTX 11044 Research Blvd, SuiteA-430 Austin TX 78759 Tel: +1-512-336-1725 Fax: +1-512-336-8189MA 24 Prime Parkway Natick MA 01760 Tel: +1-508-651-3922 Fax: +1-508-650-0625IL 25 NW Point Blvd., #660 Elk Grove Village lL 60007 Tel: +1-847-981-9494 Fax: +1-847-981-9495NC 100 Industrial Prk. Rd. Mountain Home NC 28758 Tel: +1-828-693-0241 Fax: +1-828-692-1340NJ 220 Davidson Avenue, Suite 104 Somerset, NJ 08873 Tel: +1-732-563-4336 Fax: +1-732-627-9594CA 8611 Balboa Avenue San Diego, CA 92123 Tel: +1-858-614-2511 Fax: +1-858-715-0871CA 472 Kato Terrace Freemont, CA 94539 Tel: +1-510-257-0200 Fax: +1-510-257-0125WA 5713 East Fourth Plain Blvd. Vancouver WA 98661 Tel: +1-360-696-8950 Fax: +1-360-696-9804

<EUROPE>KYOCERA Fineceramics GmbHHammfeldamm 6 41460 Neuss, GermanyTel: +49-(0)2131-16370 Fax: +49-(0)2131-1637150

KYOCERA Fineceramics Ltd.Admiral House, Harlington Way, FLEET,Hampshire, GU13 8BB.Tel: +44-(0)1252-776000 Fax: +44-(0)1252-776010

KYOCERA Fineceramics S.A.S 1, Rue Corbusier, SILIC 326, F-94598 Rungis CEDEX, FranceTel: +33-(0)1-45120220 Fax: +33-(0)1-46860133

<ASIA>KYOCERA Asia Pacific, Ltd.Hong KongRoom 801-802, Tower 1, South Seas Centre, 75 Mody Road, Tsimshatsui East, Kowloon, Hong KongTel: +852-(0)2723-7183 Fax: +852-(0)2724-4501Singapore298 Tiong Bahru Road, #13-03/05 Central Plaza, Singapore 168730Tel: +65-6271-0500 Fax: +65-6271-0600Taiwan10FL.,No.66, Nanking West Road, Taipei, Taiwan,Tel: +886-(0)2-2555-3609 Fax: +886-(0)2-2559-4131/4123Thailand159 Serm-MIT Tower, 19th Floor, Sukhumvit 21 Road, Wattana, Bangkok 10110 Thailand. Tel: +66-(0)2 661-6400 Fax: +66-(0)2 661-6413

<CHINA>KYOCERA (TianJin) Sales&Trading CorporationShanghai Branch FineCeramic Sales DeptInformation Tower 11th Floor, 211 Century Avenue,Pudong New Area Shanghai P.R ChinaPost code;200120Tel: +86-(0)21-5877-5366 Fax: +86-(0)21-6876-4935

<KOREA>KYOCERA Korea Co., Ltd.Diplomatic Center Room#406, 1376-1, Seocho-2Dong,Seocho-Gu, Seoul, 137-072 KoreaTel: +82-2-3463-3538 Fax: +82-2-3463-3539

C 2007 KYOCERA CORPORATION006/002/0710

Printed in Japan006997

<JAPAN : Headquaters>

SINGLE CRYSTAL SAPPHIRESingle Crystal Sapphire is playing an ever-increasingly important role as a material for, high reliablility Electronics today due to its excellent mechanical characteristics, chemical stability and light transmission.

Kyocera mass-produces Single Crystal Sapphire in a vertically integrated manner. From "pulling up" the raw material with EFG (Edge-Defined Film-Fed Growth) methods to machining, Kyocera produces and supplies various products with large diameters or specific shape requirements.

Large Size MaterialSizing-up of materials allows for a broader range of applications and uses.

Production of Single Crystal Sapphire in Any Desired Sectional ShapeSince any desired sectional shape can be obtained in the form of ribbons, tubes, rods, and others, cutting processes can be eliminated, allowing for a reduction in cost.

Control of Crystal OrientationAny axis and plane can be produced by instituting proper control during crystal growth.

EFG Method

FEATURES OF EFG METHOD

FEATURES OF SINGLE CRYSTAL SAPPHIRE

Unit Cell of Sapphire

High Strength, High Rigidity, High Anti-Abrasion, High Anti-Heat, High Anti-Corrosion Characteristics, and High Anti-Plasma Characteristics.Because of these characteristics, Single Crystal Sapphire is widely used for precision mechanical parts.

Stable Dielectric Constant, Very Low Dielectric Loss, Good Electrical InsulationSingle Crystal Sapphire is used as a material for substrates in super-high frequency regions. It is also used as an insulation material and microwave window. Single Crystal Sapphire has become indispensable in the Electronics Industries.

Excellent Light TransmissionSingle Crystal Sapphire is used for various kinds of vacuum equipment, windows in reaction furnace, scanner windows and caps for optical communication due to its excellent mechanical characteristics and heat resistance.

Good Thermal Conductivity and High Heat ResistanceExcellent thermal conductivity at low temperatures allows Single Crystal Sapphire as a transparent material to be used in many diverse fields requiring thermal conduction and heat radiation.

Sapphire Ribbon Crystal

Die for Crystal Growth

Crucible

MeltSupply Slit

Alumina Melt

HeatingCoil

Pull-Up Direction

A plane

C plane

R plane

R plane（1102）A plane（1120）C plane（0001）

C Axis

a2

a1

a3

Typical Orientation

1 2

CONTENTS

FEATURES OF EFG METHOD ·········································P1

FEATURES OF SINGLE CRYSTAL SAPPHIRE ···················P2

SAPPHIRE MANUFACTURING PROCESS ·························P3

CHARACTERISTICS OF SINGLE CRYSTAL SAPPHIRE ·····P4

SAPPHIRE PRODUCTS ············································P5～P6

SAPPHIRE MANUFACTURING PROCESS

■Sapphire Manufacturing Process

Polishing

Growth of Raw Material

Grinding

Lapping

（Ra：≦1Å）

■Shape and Specifications

※Shapes other than above are available.

Substrate Rod

Width 200max.Leugth 300max.Thickness0.1～20

R plane ±2degA plane±2degC plane ±2deg

Diameter 0.5～20Length 1,000max.

C Axis inLongitudinalDirection

Tube

Inner Diameter 1.3～50Tube Thickness 0.25～5Length:1,000mm max.


To be Customized

To be Customized

Others

■As-Grown Materials

Dimensions Crystal Orientation

Dimensions Crystal Orientation Dimensions Crystal Orientation


No＝1.768

Ne＝1.760

Refer to Fig.5

CHARACTERISTICS OF SINGLE CRYSTAL SAPPHIRE

■Characteristics of Kyocera's Single Crystal Sapphire

■Standard Dimensional ToleranceM

ech

anic

al C

har

acte

rist

ics

Compressive Strength

Young's Modulus

Poisson's Ratio

Hexagonal System a＝4.763Å

　　　　　 c＝13.003Å

Rhombohedral Single crystal

3.97×103kg/m3

22.5GPa（HV1（Load＝9.807N））

690MPa

2250MPa

（Diameter0.25mm Filament 25℃）

2,940MPa

470GPa

0.18～0.29

Th

erm

al C

har

acte

rist

ics

Thermal Conductivity

Specific Heat

2,053℃

40～400℃ C parallel to Caxis 7.7×10-6/℃

40～400℃ 7.0×10-6/℃

20℃　42W/（m・k）

0.75×103J/（kg・K）

＜0.02

（λ＝2.6～3.7μm880℃）

Ele

ctri

cal C

har

actd

rist

ics

Dielectric Constant

48×106V/m

20℃　＞1014Ω・cm

500℃　1011Ω・cm

C parallel to Caxis 11.5（1MHz）

　 9.3（1MHz）

＜1（×10-4）（1MHz）

－（×10-4）

10-4 max.

Optica

l Chara

cterist

ics

※These figures are representative.※Each Crystal Orientation has different characteristics.

Index of Reflection

Optical Transmission

CrystallographicStructure

Reference Density

Flexural Strength

Vickers Hardness

Tensile Strength

Melting Point

Coefficient of LinearThermal Expansion

Emittance

Dielectric Loss Angle

Loss Factor

Dielectric Loss Tangent

－100 100 300 500 700 900 1100 1300 1500 17000

2.0

4.0

6.0

8.0

10.0

Parallel to C Axis

Parallel to C Axis

Perpendicular to C Axis

Perpeudiculat to C Axis

Coef

ficie

nt o

f Lin

ear T

herm

al E

xpan

sion（

10－

6 /K）

Ther

mal

Cou

duct

ivity（

W/m・

K）

100 300 500 700 900 1100 13008.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0

Die

lect

ric C

onst

ant

102 103 104 105 106 107 108 109 10100

0.001

0.002

0.003

tanδ

Frequency（Hz）

100 300 500 700 900 1100 1300 1500 17000

10

20

30

40

50

0.15 0.2 0.3 0.4 0.6 1.00.8 1.50.5 2.0 3.0 4.0 6.05.00.10

20

40

60

80

100

Exte

rnal

Tra

nsm

issi

on（

%）

Wave Length(μm)Fig. 5 Transmission vs. Wave Length

Fig. 4 Dielectric Loss vs. FrequencyFig. 3 Dielectric Constant vs. Temperature

Fig. 1 Thermal Expansion vs. Temperature Fig. 2 Thermal Conductivity vs. Temperature

NOTE: •Transmittance range varies depending on thickness of Sapphire Products. •Interfacial Reflection included •Thickness 1mm.

190＜a

1

Nominal Dimension：ａ

Tolerance（±）

●Machining accuracy: Tube 1.A.10.A.and standard tube thickness tolerance…±0.25. Hole diameter and standard pitch tolerance…±0.1

1＞a

0.05

1≦a≦4

0.1

4＜a≦25

0.2

25＜a≦102

0.25

102＜a≦190

0.5

Dielectric strength

Volume Resistance

(unit: mm)

（Unit：mm）

@589nm

3 4

Temperature( C)Temperature( C)

Temperature( C)

C perpendicularto Caxis


SAPPHIRE MANUFACTURING PROCESS

■Sapphire Manufacturing Process

Polishing

Growth of Raw Material

Grinding

Lapping

（Ra：≦1Å）

■Shape and Specifications

※Shapes other than above are available.

Substrate Rod

Width 200max.Leugth 300max.Thickness0.1～20

R plane ±2degA plane±2degC plane ±2deg

Diameter 0.5～20Length 1,000max.


Tube

Inner Diameter 1.3～50Tube Thickness 0.25～5Length:1,000mm max.


To be Customized

To be Customized

Others

■As-Grown Materials


Dimensions Crystal Orientation Dimensions Crystal Orientation


No＝1.768

Ne＝1.760

Refer to Fig.5

CHARACTERISTICS OF SINGLE CRYSTAL SAPPHIRE

■Characteristics of Kyocera's Single Crystal Sapphire

■Standard Dimensional Tolerance

Mec

han

ical

Ch

arac

teri

stic

s

Compressive Strength

Young's Modulus

Poisson's Ratio

Hexagonal System a＝4.763Å

　　　　　 c＝13.003Å

Rhombohedral Single crystal

3.97×103kg/m3

22.5GPa（HV1（Load＝9.807N））

690MPa

2250MPa

（Diameter0.25mm Filament 25℃）

2,940MPa

470GPa

0.18～0.29

Th

erm

al C

har

acte

rist

ics

Thermal Conductivity

Specific Heat

2,053℃

40～400℃ C parallel to Caxis 7.7×10-6/℃

40～400℃ 7.0×10-6/℃

20℃　42W/（m・k）

0.75×103J/（kg・K）

＜0.02

（λ＝2.6～3.7μm880℃）

Ele

ctri

cal C

har

actd

rist

ics

Dielectric Constant

48×106V/m

20℃　＞1014Ω・cm

500℃　1011Ω・cm

C parallel to Caxis 11.5（1MHz）

　 9.3（1MHz）

＜1（×10-4）（1MHz）

－（×10-4）

10-4 max.

Optica

l Chara

cterist

ics

※These figures are representative.※Each Crystal Orientation has different characteristics.

Index of Reflection

Optical Transmission

CrystallographicStructure

Reference Density

Flexural Strength

Vickers Hardness

Tensile Strength

Melting Point

Coefficient of LinearThermal Expansion

Emittance

Dielectric Loss Angle

Loss Factor

Dielectric Loss Tangent

－100 100 300 500 700 900 1100 1300 1500 17000

2.0

4.0

6.0

8.0

10.0

Parallel to C Axis

Parallel to C Axis

Perpendicular to C Axis

Perpeudiculat to C Axis

Coef

ficie

nt o

f Lin

ear T

herm

al E

xpan

sion（

10－

6 /K）

Ther

mal

Cou

duct

ivity（

W/m・

K）

100 300 500 700 900 1100 13008.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0D

iele

ctric

Con

stan

t

102 103 104 105 106 107 108 109 10100

0.001

0.002

0.003

tanδ

Frequency（Hz）

100 300 500 700 900 1100 1300 1500 17000

10

20

30

40

50

0.15 0.2 0.3 0.4 0.6 1.00.8 1.50.5 2.0 3.0 4.0 6.05.00.10

20

40

60

80

100

Exte

rnal

Tra

nsm

issi

on（

%）

Wave Length(μm)Fig. 5 Transmission vs. Wave Length

Fig. 4 Dielectric Loss vs. FrequencyFig. 3 Dielectric Constant vs. Temperature

Fig. 1 Thermal Expansion vs. Temperature Fig. 2 Thermal Conductivity vs. Temperature

NOTE: •Transmittance range varies depending on thickness of Sapphire Products. •Interfacial Reflection included •Thickness 1mm.

190＜a

1

Nominal Dimension：ａ

Tolerance（±）

●Machining accuracy: Tube 1.A.10.A.and standard tube thickness tolerance…±0.25. Hole diameter and standard pitch tolerance…±0.1

1＞a

0.05

1≦a≦4

0.1

4＜a≦25

0.2

25＜a≦102

0.25

102＜a≦190

0.5

Dielectric strength

Volume Resistance

(unit: mm)

（Unit：mm）

@589nm

3 4

Temperature( C)Temperature( C)

Temperature( C)



SAPPHIRE PRODUCTS

■Substrate●Application (1)High Brightness LED

(2)HB-LED Semiconductor, Piezoelectric Semiconductor, Superconductor,

Thin Film Substrate.

(3)MR Sensor, Precision Resistor

(4)Optical Devices

(5)Thin Film HIC

●2"-8" substrate for Optical Devices ●Selected Transmission Layer for Wave Length Optical Transmission ●AR Coat External Transmission

■Semiconductor Process Equipment Parts

Size O.F. Length

8″φ200±0.25×0.725±0.05　55～60

6″φ150±0.25×0.625±0.05　45～50

5″φ125±0.25×0.625±0.05　40～45

4″φ100±0.25×0.53 ±0.05　30～35

3″φ76.2±0.25×0.43±0.05　19～25

2″φ50.8±0.25×0.33±0.05　13～19

■Optical Products for LCD Projectors

※Characteristic values are subjected to change due to each specs or conditions.

■Optical Products ■Others

●Standard Dimension and Tolerance ●Application Examples

●Single Crystal Sapphire is widely used substrate material for

blue, green, ultraviolet and white LEDs. It has excellent

features as a base substrate for GaN deposition and great

mass-productivity. In addition, it can meet future larger-size

demand.

●Application (1)Carrier Plate (2)Microwave Entrance Tube (3)Dummy Water (4)Handling Arm (5)Vacuum Chuck (6)Window

●It is used as various Semiconductor Process Equipment due to its high anti-plasma and high anti-heat characteristics.

●Single Crystal Sapphire is used as a base substrate in thin film

deposition because of its lattice alignment match with a variety

of semiconductor materials combined with excellent thermal

and chemical stability.

●Application（1）Sapphire Plate

　　・Polarizing Film Attached

　　・Holder Assembled

　　・Dichroic Filter

（2）LCD Projector

Dust Control Plate

●Sapphire material realizes high brightness and high picture

quality for LCD projectors due to its high thermal

conductivity and optical properties.

●Coating such as Dichroic Filter, to prevent reflection

features is available.

●Standard sizes to fit in various LCD panels are available.

400 450 500 550 600 650 700 750 800

Wave length(nm)

0

20

40

60

80

100

Transmission(%)

Red

GreenBlue

400 425 450 475 500 525 550 575 600 625 650 675 700

Wave length(nm)

80

85

90

95

100Transmission(%)

Non coating

Both-sidesAR coating

One-side AR coating

(475nm Target）

Multicoating

※Specifications other than above are available.※Available sizes are dependent on a crystal orientation.

Sizes and tolerances other than the above table are also available under customer requirements. Please contact or send your requirements to Kyocera.

●Application (1)POS Scanner Window (SOG) (2)Window (3)Cap for Optical Communication (4)Infrared Measuring Device Window (5)Coin Sensor

(6)Lamp External Tube High Pressure Sodium, Xenon, Ultra Pressure mercury Metallic Halide (7)Light Receiving Window Accelerating Tube

●Application (1)Fiber Bar Guide (2)Insulating Plate and Rod (3)Single Crystal Material Sheel Holder (4)Biomaterial (BIOCERAMR ) (5)Watch Window (6)NMR Protection Tube

(7)Thermocouple Protection Tube (8)HDC Resonator Rod

JP Patent No. 3091183, No.3443549 U.S. Patent No. 6577375, No.6642989

（1）

（3）（4）

（2）

5 6

SINGLE CRYSTALSAPPHIRE

SINGLE CRYSTALSAPPHIRE

KYOCERA CorporationCorporate Fine Ceramics Group 6 Takeda Tobadono-cho, Fushimi-ku, Kyoto 612-8501, JapanTel: +81-(0)75-604-3441　Fax: +81-(0)75-604-3438

http://www.kyocera.co.jp

<U.S.A>KYOCERA Industrial Ceramics CorporationTX 11044 Research Blvd., SuiteA-430, Austin, TX 78759 Tel: +1-512-336-1725 Fax: +1-512-336-8189MA 24 Prime Parkway Natick MA 01760 Tel: +1-508-651-3922 Fax: +1-508-650-0625IL 25 NW Point Blvd., #660 Elk Grove Village lL 60007 Tel: +1-847-981-9494 Fax: +1-847-981-9495NC 100 Industrial Park Rd, Hendersonville, NC 28792 Tel: +1-828-693-8244 Fax: +1-828-692-1340NJ 220 Davidson Avenue, Suite 104, Somerset, NJ 08873 Tel: +1-732-563-4336 Fax: +1-732-627-9594CA 8611 Balboa Avenue, San Diego, CA 92123 Tel: +1-858-614-2520 Fax: +1-858-715-0871CA 472 Kato Terrace, Fremont, CA 94539 Tel: +1-510-257-0200 Fax: +1-510-257-0125WA 5713 East Fourth Plain Blvd., Vancouver WA 98661 Tel: +1-360-696-8950 Fax: +1-360-696-9804

<EUROPE>KYOCERA Fineceramics GmbHHammfelddamm 6 41460 Neuss, GermanyTel: +49-(0)2131-16370 Fax: +49-(0)2131-1637150

KYOCERA Fineceramics Ltd.Prospect House Archipelago Lyon Way Frimley Surrey GU16 7ER U.K.Tel: +44-(0)1276-693450 Fax: +44-(0)1276-693460

KYOCERA Fineceramics S.A.S.Parc Tertiaire Silic 21 Rue De VilleneuveBP 90439 94583 Rungis Cedex, FranceTel: +33-(0)1-41737330 Fax: +33-(0)1-41737359

<ASIA>KYOCERA Asia Pacific, Ltd.Hong KongRoom 801-802, Tower 1, South Seas Centre, 75 Mody Road, Tsimshatsui East, Kowloon, Hong KongTel: +852-(0)2723-7183 Fax: +852-(0)2724-4501Singapore298 Tiong Bahru Road, #13-03/05 Central Plaza, Singapore 168730Tel: +65-6271-0500 Fax: +65-6271-0600Taiwan10FL.,No.66, Nanking West Road, Taipei, Taiwan,Tel: +886-(0)2-2555-3609 Fax: +886-(0)2-2559-4131/4123

Thailand159 Serm-MIT Tower, 19th Floor, Sukhumvit 21 Road, Wattana, Bangkok 10110 Thailand.Tel: +66-(0)2 661-6400 Fax: +66-(0)2 661-6413

KYOCERA Asia Pacific India Pvt.Ltd.IndiaPLOT NO.51, Phase-I, Udyog Vihar Gurgaon 122016 Haryana, IndiaTel: +91-124-4025000 Fax: +91-124-4025001

KYOCERA Asia Pacific Pte. Ltd.Manila Branch11B Kingston Tower, Block 2 Lot 1 Acacia Avenue, Madrigal Business Park Alabang, Muninlupa City 1780, PhillipinesTel: +63(2)771-0618 Fax: +63(2)775-0532

KYOCERA (Malaysia) Sdn.Bhd.MalaysiaLot 4A, Lower Level 3 Hotel Equatrial, Penang No.1,Jalan Bukit Jambul 11900 Penang, MalaysiaTel:+60(4)641-4190 Fax: +60(4)641-4209

<CHINA>KYOCERA (China) Sales&Trading CorporationShanghai Branch FineCeramic Sales DeptUnit 601 floor of Ocean Towers, No.550 Yan an East Road, HuangpuDistrict, Shanghai, 200001 P.R. ChinaTel: +86-(0)21-5877-5366 Fax: +86-(0)21-5888-5082

KYOCERA (China) Sales&Trading CorporationShenzen Office Fine Ceramic Sales DeptRoom 1809, Hailrun Complex, No.6021 Shennan Blvd.,Shenzhen, 518040 P.R.ChinaTel: +86-(0)755-82873625 Fax: +86-(0)755-82873640

<KOREA>KYOCERA Korea Co., Ltd.Diplomatic Center Room No. 406, 1376-1, Seocho-2Dong,Seocho-Gu, Seoul, 137-072, KoreaTel: +82-2-3463-3538 Fax: +82-2-3463-3539

006/008/1207July,2012

Printed in Japan004737

<JAPAN : Headquaters>

The contents of this catalog are subject to change without prior notice for further improvement.Application and the using conditions are required to be consulted on when to consider purchase.

C 2012 KYOCERA CORPORATION

chemistry5

Documents