N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FETISSUE 2 – MARCH 94

FEATURES* 100 Volt VDS* RDS(on)= 1.5Ω* Spice model available

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage VDS 100 V

Continuous Drain Current at Tamb=25°C ID 450 mA

Pulsed Drain Current IDM 6 A

Gate-Source Voltage VGS ± 20 V

Power Dissipation at Tamb=25°C Ptot 700 mW

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source BreakdownVoltage

BVDSS 100 V ID=1mA, VGS=0V

Gate-Source ThresholdVoltage

VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS

Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V

Zero Gate Voltage DrainCurrent

IDSS 10100

µAµA

VDS=100V, VGS=0VDS=80V, VGS=0V, T=125°C(2)

On-State Drain Current(1) ID(on) 2.5 A VDS=25V, VGS=10V

Static Drain-Source On-StateResistance (1)

RDS(on) 1.51.8

Ω VGS=10V,ID=1.5AVGS=5V,ID=500mA

Forward Transconductance(1)(2)

gfs 250 mS VDS=25V,ID=1.5A

Input Capacitance (2) Ciss 100 pF

Common Source OutputCapacitance (2)

Coss 40 pF VDS=25V, VGS=0V, f=1MHz

Reverse Transfer Capacitance(2)

Crss 12 pF

Turn-On Delay Time (2)(3) td(on) 4 ns

VDD ≈25V, ID=1.5ARise Time (2)(3) tr 8 ns

Turn-Off Delay Time (2)(3) td(off) 20 ns

Fall Time (2)(3) tf 30 ns

E-Line

TO92 Compatible

ZVN4210A

3-388

D G S

On-resistance v drain current

ID-Drain Current (Amps)RD

S(o

n)-D

rain

Sou

rce

On

Res

ista

nce

( Ω)

0.1 1.0 10

3.5V 6V VGS=3V 8V 10V

1

100

10

TYPICAL CHARACTERISTICS

Saturation Characteristics

VDS - Drain Source Voltage (Volts)

0 1 2 3 4 5 6 7 8 9 10

ID -

Dra

in C

urre

nt (

Am

ps)

Normalised R DS(on) and VGS(th) v Temperature

Tj-Junction Temperature (°C)

Nor

mal

ised

RD

S(o

n)an

d V

GS

(th

)

-50 -25 0 25 50 75 100 150125 175 200

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Dra

in-S

ource

Resist

ance

RDS(o

n)

Gate Threshold Voltage VGS(TH)

ID=1.5AVGS=10V

ID=1mAVGS=VDS

2.6

225

7V

5V

4V

6V

8V9V

VGS=

10V

3V

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

C-C

apac

itanc

e (p

F)

0 20 40 60 80 100 0

120

80

40

160

200

Q-Charge (nC)

VG

S-G

ate

Sou

rce

Vol

tage

(V

olts

)

Gate charge v gate-source voltage

10

8

6

2

0

4

12

14

16

VDD= 20V

ID=1.5A

50V

0 1 2 3 4 5 6

Transconductance v drain current

ID(on)- Drain Current (Amps)

gfs-

Tran

scon

duct

ance

(m

S)

0 1 2 0

100

200

400

300

500

3 4 5

VDS=10V

4

1

2

5

3

0

Coss

Ciss

Crss

80V

2V2.5V

3.5V

5V

600

700

900

800

1000

ZVN4210A

3-389

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FETISSUE 2 – MARCH 94

FEATURES* 100 Volt VDS* RDS(on)= 1.5Ω* Spice model available

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage VDS 100 V

Continuous Drain Current at Tamb=25°C ID 450 mA

Pulsed Drain Current IDM 6 A

Gate-Source Voltage VGS ± 20 V

Power Dissipation at Tamb=25°C Ptot 700 mW

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source BreakdownVoltage

BVDSS 100 V ID=1mA, VGS=0V

Gate-Source ThresholdVoltage

VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS

Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V

Zero Gate Voltage DrainCurrent

IDSS 10100

µAµA

VDS=100V, VGS=0VDS=80V, VGS=0V, T=125°C(2)

On-State Drain Current(1) ID(on) 2.5 A VDS=25V, VGS=10V

Static Drain-Source On-StateResistance (1)

RDS(on) 1.51.8

Ω VGS=10V,ID=1.5AVGS=5V,ID=500mA

Forward Transconductance(1)(2)

gfs 250 mS VDS=25V,ID=1.5A

Input Capacitance (2) Ciss 100 pF

Common Source OutputCapacitance (2)

Coss 40 pF VDS=25V, VGS=0V, f=1MHz

Reverse Transfer Capacitance(2)

Crss 12 pF

Turn-On Delay Time (2)(3) td(on) 4 ns

VDD ≈25V, ID=1.5ARise Time (2)(3) tr 8 ns

Turn-Off Delay Time (2)(3) td(off) 20 ns

Fall Time (2)(3) tf 30 ns

E-Line

TO92 Compatible

ZVN4210A

3-388

D G S

On-resistance v drain current

ID-Drain Current (Amps)RD

S(o

n)-D

rain

Sou

rce

On

Res

ista

nce

( Ω)

0.1 1.0 10

3.5V 6V VGS=3V 8V 10V

1

100

10

TYPICAL CHARACTERISTICS

Saturation Characteristics

VDS - Drain Source Voltage (Volts)

0 1 2 3 4 5 6 7 8 9 10

ID -

Dra

in C

urre

nt (

Am

ps)

Normalised R DS(on) and VGS(th) v Temperature

Tj-Junction Temperature (°C)

Nor

mal

ised

RD

S(o

n)an

d V

GS

(th

)

-50 -25 0 25 50 75 100 150125 175 200

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Dra

in-S

ource

Resist

ance

RDS(o

n)

Gate Threshold Voltage VGS(TH)

ID=1.5AVGS=10V

ID=1mAVGS=VDS

2.6

225

7V

5V

4V

6V

8V9V

VGS=

10V

3V

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

C-C

apac

itanc

e (p

F)

0 20 40 60 80 100 0

120

80

40

160

200

Q-Charge (nC)

VG

S-G

ate

Sou

rce

Vol

tage

(V

olts

)

Gate charge v gate-source voltage

10

8

6

2

0

4

12

14

16

VDD= 20V

ID=1.5A

50V

0 1 2 3 4 5 6

Transconductance v drain current

ID(on)- Drain Current (Amps)

gfs-

Tran

scon

duct

ance

(m

S)

0 1 2 0

100

200

400

300

500

3 4 5

VDS=10V

4

1

2

5

3

0

Coss

Ciss

Crss

80V

2V2.5V

3.5V

5V

600

700

900

800

1000

ZVN4210A

3-389