biennial report 2014 - instituto de física da ufrgsgrande/arep2014.pdf · biennial report - 2014...

Biennial Report 2014

Laboratório de

Implantação IônicaInstituto de Física - UFRGS

Porto Alegre, 2014

Instituto de Física – UFRGSLaboratório de Implantação Iônica

Biennial Report - 2014

Editors

Raquel Giulian

José Henrique dos Santos

Pedro Luis Grande

Porto Alegre

2014

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Table of Contents

Preface 5

Staff-2014 7

Brazilian collaborators 12

International collaborators 14

Facilities 17

Research projects 18

Publications in peer reviewed articles 49

Conference Proceedings 56

Books and book chapters 58

Oral contributions and invited talks 58

Supervision of Theses and dissertations 61

Patent 62

Organization of Conferences 63

Members int. commitees and ed. boards 63

Partners 65

Projects 66

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The Ion Implantation Laboratory (IIL) is an ion beam center at the Institute of Physics (IF) at the Federal University of Rio Grande do Sul (UFRGS), Brazil. The IF-UFRGS is located in the city of Porto Alegre (state of Rio Grande do Sul) and it is ranked as the most important research center of Physics in southern Brazil.

The IIL has three accelerators that provide a wide variety of positive ions in a broad energy range and are used by tens of researchers from Brazil and other countries from Latin America for ion-beam analysis, ion implantation and ion irradiation. Several beam lines with different analytical techniques are available to scientists from different fields. The techniques are:

PIXE (Particle-Induced X-ray Emission): provides elemental concentrations of the order of part per million;RBS (Rutherford Backscattering Spectrometry): used for characterization of different structures, including multi-layered targets;NRA (Nuclear Reaction Analysis) and NRP (Nuclear Reaction Profiling): ideal to detect and profile specific isotopes respectively;Microprobe: allow the use of techniques like PIXE, RBS and STIM with micrometer beam size;MEIS (Medium Energy Ion Scattering): it is a high-resolution RBS technique with isotope-separation capability; Ion Implantation: used for modification of materials under controlled parameters.

Preface

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The infrastructure of the laboratory includes a large variety of ovens, a cleaning room, a MEV microscope and photoluminescence laboratory, A fully dedicated workshop allows the maintenance of the laboratory in a regular basis. A general view of the laboratory is shown below, featuring the beam lines of the Tandetron accelerator.

This is the forth issue of our activities and covers two years (2013-2014) of scientific production of all staff members, post-docs and students of the IIL. Comparing this issue with the previous one where we have celebrated our 30th foundation anniversary, we observe a change in our scientific production. This reflects the retirements and new entries of researchers in our lab. In fact many young and talent researchers have joined the IIL recently and have already improved our scientific production in spite of strong difficulties arising from the increase of academic duties in our university and restriction of budget.After all we are committed to go further.

Pedro L. GrandeHead of Ion Implantation Laboratory

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Staff - 2014

Permanent

Pedro Luís Grande, PhD. (IF, UFRGS, 1989) - Group leader since 2009.

Johnny Ferraz Dias, PhD. (UG, BELGIUM, 1994) – Accelerators coordinator since 2010.

Fernando Claudio Zawislak, PhD. (IF, UFRGS, 1967) - Founder andGroup leader between 1980 and 2008

Moni Behar, PhD. (UBA, ARGENTINA, 1970) – Accelerators coordinator between 1982 and 2009

Israel Jacob Rabin Baumvol, PhD. (IF, UFRGS, 1977)

Livio Amaral, PhD. (IF, UFRGS, 1982)

Paulo Fernando Papaleo Fichtner, PhD. (IF, UFRGS, 1987)

Henri Ivanov Boudinov , PhD. (IE-BAN, BULGARY, 1991)

Fernanda Chiarello Stedile, PhD. (IQ, UFRGS, 1994)

Ricardo Meurer Papaléo, PhD. (U.UPPSALA, SWEDEN, 1996) PUC-RS

Rogério Luis Maltez, PhD. (IF, UFRGS, 1997)

Claudio Radtke,PhD. (IF, UFRGS, 2003)

Cristiano Krug, PhD. (IF, UFRGS, 2003)

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Gustavo de Medeiros Azevedo, PhD. (IF, UFRGS, 2000)

Daniel Lorscheitter Baptista, PhD. (IF, UFRGS, 2003)

Gabriel Viera Soares, PhD. (IF, UFRGS, 2008)

Raul Carlos Fadanelli Filho, PhD. (IF, UFRGS, 2005)

Rafael Peretti Pezzi, PhD. (IF, UFRGS, 2009)

Leandro Langie Araujo, PhD. (IF, UFRGS, 2004)

Agenor Hentz da Silva Jr., PhD. (IF, UFRGS, 2007)

Raquel Giulian, PhD. (RSPE, ANU, AUSTRALIA, 2009)

Permanent Technicians

Agostinho A. Bulla, Electrical Engineer responsible for the accelerators

Clodomiro F. Castello, Accelerator support and operation

Paulo R. Borba, Accelerator support and operation

Paulo Kovalick, Workshop

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Temporary Technicians

Zacarias E. Fabrim, Mechanical Engineer responsible for the clean-room

Éder Bidinotto Brito, Sample preparation and clean-room assistant

Michele Richter, Sample preparation and clean-room assistant

Marcelo Cavagnolli, IE-MULTI (Multi-users support)

Eduardo Ribeiro dos Santos, IE-MULTI (Multi-users support)

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Postdocs

Paulo Licenio Franzen

Silvina Limardi

Paulo Fernandes Costa Jobim

Carla Eliete Iochims dos Santos

Wellington Fernandez

Vanessa da Conceição Osório

S. Larramendi (Cuba)

Yusleydi Enamorado Horrutiner (Cuba)

Cláudia Telles de Souza

Chiara Nascimento

Elis Moura Stori Rosa

Graduate Students (Master and PhD)

Thiago Dias - PhD

Silma Alberton Corrêa - PhD

Eduardo Pitthan Filho - PhD

Eliasibe Luis de Souza - PhD

Caroline Lisevski - PhD

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Chiara das Dores do Nascimento - PhD

Guilherme Sombrio - PhD

Antônio Eudocio Pozo de Mattos - Master

Matheus Adam - Master

Eder Sandim Ximenes - Master

Maurício Sortica - PhD

Dario F. Sanchez - PhD

Gabriel Marmitt - PhD

Deise Schafer - PhD

Nicolau Molina Bom - PhD

Ivan Rodrigo Kaufmann - PhD

Bárbara Canto - PhD

João Wagner Lopes de Oliveira - PhD

Zacarias Eduardo Fabrim - PhD

Luiz Acauan - PhD

Luiza Raquel Manfredi da Silva- Master

Cláudia Telles de Souza - PhD

Elis Moura Stori - PhD

Liana Appel Boufleur - PhD

Cristiane Marin - PhD

Augusto A. D. de Mattos - PhD

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Josiane Salazar Bueno - PhD

Guilherme Rolim - Master

Anaí Duarte - PhD

Lucio Rosa - PhD

Tiago Silva de Avila - PhD

Masahiro Hatori - PhD

Gabriel Volkweis Leite - Master

Horácio Coelho Júnior - PhD

Flávio Matias - PhD

Vagner Vaguin - PhD

Louise Etcheverry - Master

Viviane Peçanha Antonio - Master

Rafael C. Pazim - PhD

Eduardo Ribas - PhD

Flávia F. Fernades - PhD

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Brazilian colaborators

L.M. Nagamine, USP, São Paulo

R.P. Menezes, PUC, Rio de Janeiro

E.F. da Silveira, PUC, Rio de Janeiro

L.S. Farenzena, UFSC, Santa Catarina

G. Machado, CETENE, Pernambuco

L. Miotti, Caxias do Sul

J. Geshev, UFRGS, Porto Alegre

L.G. Pereira, UFRGS, Porto Alegre

M. Schiavon, UFSJ, Minas Gerais

U.S. Sias, IFSul-Campus Pelotas-RS

E.F. da Silva Jr., UFPE, Recife

A.A. Pasa, UFSC, Florianópolis

I. Hummelgen, UFPR, Curitiba

J.W. Swart, CTI, Campinas

J.A. Diniz, UNICAMP, Campinas

G. Kellermann, UFPR, Curitiba

A. Malachias, UFMG, Belo Horizonte

R.L. Sommer, CBPF, Rio de Janeiro

L. Sampaio, CBPF, Rio de Janeiro

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V.P. Mammana, CTI, Campinas

L. F. Schelp, UFSM, Santa Maria - RS

M Carara, UFSM, Santa Maria - RS

L S Dorneles, UFSM, Santa Maria - RS

V Moraes, UNESC, Criciúma - SC

S Francke, UNISC, Santa Cruz do Sul - RS

J Silva, ULBRA, Canoas - RS

E. F. da Silveira, PUC, Rio de Janeiro

D. Mosca, UFPR, Curitiba

Carla Eliete Iochims dos Santos, FURG, Santo Antônio da Patrulha - RS

Antônio Ferreira, UFBA, Salvador - BA

June F. Dias, Instituto Oceanográfico, USP

Antônio Marcos Helgueira de Andrade, UFRGS, Porto Alegre - RS

Carlo Requião da Cunha, UFRGS, Porto Alegre - RS

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International colaborators

L. Thome, Orsay, France.

F. Garrido, Orsay, France.

W. Skorupa Rossendorf, Germany.

L. Rebohle, Rossendeorf, Germany

I. Abril, University of Alicant, Spain

F. Garcia- Molina University of Murcia, Spain.

G. Garcia Bermudez, Lab. Tandar CNEA, Argentina.

N. Arista CAB, CNEA, Argentina.

S. Suarez CAB, CNEA, Argentina.

G. Lucovsky, NCSU, EUA.

J.M.J. Lopes, PDI, Germany.

L. Feldman, Rutgers University,E.U.A.

A. Agarwal,Cree Inc., E.U.A.

A. Lelis, Army Research Lab., E.U.A.

S. Dimitrijev, Griffith University, Austrália

G. Schiwietz, Helmholtz-Zentrum Berlin, Germany

J. Kennedy, GNS,New Zealand

H. Rothard, GANIL, France

D. K. Ferry, Arizona State University, E.U.A.

V. Mittin, State University of New York at Buffalo, E.U.A.

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M.C. Ridgway, The Australian National University, Autralia.

H.G. Rubahn, NanoSYD, Sonderborg, Denmark.

Z. Liliental-Weber, LBNL, USA

C. Trautmann, GSI, Darmstadt, Germany

F. Aumayr,Vienna University of Technology, Vienna,Austria

E. Oliviero, University of Paris-Sud (Orsay), France.

J-F Barbot, University of Poitiers, France.

S. Reboh, Laboratoire d'électronique des technologies de l'information,

Grenoble, France.

T. Reinert, University of North Texas, United States.

O. Melo, Universidad de La Habana, Cuba.

M. Alfonso, Universidad de La Habana, Cuba.

Y. Kido, Univ. of Ritsumeikan, Japan.

I.C. Vickridge, Universite Pierre et Marie Curie/CNRS, Paris, France.

J.J. Ganem, Universite Pierre et Marie Curie/CNRS, Paris, France.

Bruno Canut, Université Lyon I, France.

R. G. Elliman, ANU, Australia

M. Vos, ANU, Australia

D. K. Venkatachalam, ANU, Australia

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José M. Fernández-Varea, Universitat de Barcelona, Spain.

Claudia C. Montanari, UBA, Argentina.

Iuri Danilov, University of Nizhny Novgorod, Russia

J. Miraglia Argentina

Wojciech Przybylowics, iTemba Labs, Africa do Sul

Patrick Kluth, ANU, Australia

Cláudia Gomes Silva, UPO, Portugal

R.M.S dos Reis, LBNL, USA

V. Avrutin, VCU, USA

H. Morkoc, VCU, USA

S. Ramos-Canut, Université Claude Bernarde, Lyon 1, France.

Jakob Kjelstrup-Hansen, University of Southern Denmark, Sonderborg,

Denmark.

Jean-Jacques Pireaux, University of Namur, Belgium

Eduardo M. Bringa, Universidad Nacional de Cuyo, Mendoza, Argentina

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Besides the accelerators the laboratory has the following facilities

a) Photoluminesce laboratory

b) Cleanroom

c) Furnaces, ovens and reactor chambers

d) Scanning electron microscope

Tandetron accelerator 500 kV accelerator 250 kV accelerator

Furnaces and reactors Optical characterization Clean room

Workshop Support room

Facilities

Laboratório de Implantação Iônica

Research

Projects

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Oxygen reduction in low-energy ion

implantation of silver ions in titaniumA.V. Souza, T.P. Soares, F.G. Echeverrigaray, F.E.D. Palandi, C.H. Wanke, C.A.

Figueroa, I.J.R. Baumvol, S.E. LAGUNA, C. Aguzzoli

Introduction

Results

The performance of Monte Carlo simulations shows is crucial indetermining the energies to be used in deployments, as predicted approximatelyprofiles dose/depth of Ag+ implanted in titanium.

The characterization physicochemical technique was used showedthat RBS quantitative doses of silver, where concentrations were in the order ofmagnitude of 1015 atoms/cm2 results.

The GD-OES indicates that silver is in fact located on the steelsurface, indicating a depth of penetration of less than 10 nm silver. The oxygenprofile in depth qualitatively shows a reduction for treated samples.

Biocompatible materials have been widely studied especially toconfer antibacterial properties to these materials, e.g. modifying them byimplantation of silver ions at near surface region. The biological results areencouraging, given its antimicrobial activity which is effective against thebacteria E. coli and S. aureus. Titanium medical class stands out for its highdegree of biocompatibility. However, this process can have its efficiencyharmed by the presence of oxygen, which reacts at room temperature withtitanium forming a thin oxide layer. This layer can act as a barrier hinderingboth the process, for implantation of ions and for releasing of Ag+ from insidethe metal.

To remove the oxide layer three kinds of cleaning priorimplantation process were evaluated: chemical etching by immersion incommon industrial acid solution, plasma etching and chemical etching followedby plasma.

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Research outlook

Publications

[1] F.E.D. Palandi, F.G. Echeverrigaray, C.H. Wanke, C.A. Figueroa, I.J.R.Baumvol, C. Aguzzoli, Implantação iônica de baixa energia de íons de prata

em titânio. Scientia cum indústria, 2, 1, 26 (2014).

Plasma etching has the advantage to occur in the sameimplantation chamber and the process may be considered environmentallyfriendly because it doesn’t use chemicals therefore does not produce effluent.

Accordingly, defends the hypothesis to make this process ofsurface modification on an industrial scale, although data are lacking to proveyour income and the total cost of the treated product. However, there is aperspective of a total gain hundred times in yield compared to the high energyion implantation.

Figure 1 - RBS spectrum of characteristic signals consisting of titanium, the largest part of

the spectrum signal, and silver represented by peak. There are no hint of the presence of

contaminants in the samples.

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GeO2/Ge Structure Submitted to

Annealing in DeuteriumC. Radtke

Introduction

Results

Figure 1(a) shows D areal densities (determined by nuclearreaction analysis) as a function of the annealing temperature of thermallyoxidized Si and Ge substrates. Following annealing at 250 oC, D was notdetected within the sensitivity of the technique. For 350 oC and above, GeO

2/Ge

samples incorporate higher amounts of D than their SiO2/Si counterparts. This

observation is probably related to the production of oxygen vacancies inGeO

2/Ge samples which constitute incorporation sites for D. In both cases, a

maximum of D incorporation is observed for samples annealed at 450 oC.Quantification of the remaining 18O amount of each sample following thesetreatments was performed to probe the stability of such structures (Fig. 1 (b)).It’s clear the lower thermal stability of GeO

2/Ge structures with respect to

SiO2/Si counterparts.

The downscaling of the silicon (Si) based metal oxidesemiconductor field-effect transistors (MOSFET’s) lead these devices to theirphysical and technological limits. New semiconductors are demanded tocontinue the scaling process. Germanium (Ge) is considered to be an interestingmaterial for replacing Si due to its high charge carrier mobility, narrowbandgap, and low dopant activation temperatures. Particularly, it presents thehighest hole mobility among all the known semiconductor materials, being themost promising contender for PMOS devices. However, the passivation of theGe surface is still an issue. In this work, we investigated the incorporation of Hin GeO

2/Ge upon thermal treatments. GeO

2can be formed, intentionally or not,

on the top of the Ge substrate, acting as the major passivation agent. Thus,understanding the effects of H incorporation in this layer is crucial to tailorefficient passivation routes for Ge based devices.

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The present results constitute important benchmarks to the choiceof forming gas annealing (FGA) parameters of Ge based devices. They alsoprovide a deeper insight into the physico-chemical modifications and relatedelectrical characteristics of Ge MOS structures submitted to FGA.

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Research outlook

Publication

[1] N.M. Bom, G.V. Soares, S. Hartmann, A. Bordin, C. Radtke, GeO2/Ge

structure submitted to annealing in deuterium: Incorporation pathways and

associated oxide modifications, Applied Physics Letters, 105, 141605 (2014).

Figure 1 - (a) D areal densities of

GeO2/Ge and SiO

2/Si structures

submitted to annealing in D2at the

indicated temperatures. Both GeO2

and SiO2layers were obtained by

thermal oxidation in 18O2. (b)

Remnant 18O areal densities of the

same samples. Above each point is

indicated the percentage of 18O

concentration of as-oxidized

samples, remaining after D2

annealing. Lines are only to guide

the eyes.

D incorporation in GeO2/Ge structures following D

2annealings

was investigated. Higher D concentrations were obtained for GeO2/Ge samples

in comparison to their SiO2/Si counterparts annealed in the same conditions.

Oxygen vacancies produced during the annealing step in D2constitute defect

sites for D incorporation analogous to defects at the SiO2/Si interfacial region.

These vacancies are created both at the GeO2/Ge interface and at the GeO

2

surface. The latter mechanism results from the interaction of D2with the oxide.

Besides D incorporation, volatilization of the oxide layer is also observedfollowing D

2annealing. In parallel to this volatilization, oxide stoichiometry is

also modified: reduction of GeO2to metallic Ge takes place.

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Passivation of Native Point Defects in

ZnO Nanowires by SiO2 Sputtering

DepositionC. I. L. Sombrio, P. L. Franzen, R. dos Reis,

H. I. Boudinov, D. L. Baptista

Introduction

Results

Vertically aligned ZnO nanowires were grown by vapor-liquid-solid (VLS) mechanism on sapphire substrates (Fig. 1). The nanowires werethen coated with SiO

2by RF sputtering. Transmission electron microscopy

(TEM) and electron energy loss spectroscopy (EELS) confirm the presence ofan approximately 10 nm SiO

2layer surrounding each nanowire (not shown).

The PL measurements showed a strong decrease in the visible band emissionconsistent with a V

Opassivation mechanism during SiO

2deposition (Fig. 2 (a)).

However, annealing treatments at increasingly higher temperatures favored theoxygen desorption and the increase of deep-level states again (Fig. 2 (b)).

Zinc Oxide (ZnO) is a transparent semiconductor with a directband gap of about 3.37 eV. Its large exciton binding energy (60 meV) makes itsuitable for short-wavelength optoelectronics devices operating at roomtemperature. Nevertheless, photoluminescence (PL) experiments performed onnanostructured ZnO usually present strong deep-level-emission (DLE) bandrelated to native point defects such as oxygen vacancies (V

O), zinc vacancies

(VZn), interstitial oxygen (O

i) and interstitial zinc (Zn

i). In the case of ZnO

nanowires (NWs), the higher surface to volume ratio increases the number ofsurface-related trap states, directly affecting the near-band-emission (NBE). Inthis work, atomic defect passivation mechanisms are applied aiming to improvethe NBE emission of ZnO nanowires.

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Research outlook

Publications

[1] C. I. L. Sombrio, P. L. Franzen, R. dos Reis, H. I. Boudinov, D. L. Baptista,Passivation of defects in ZnO nanowires by SiO2 sputtering deposition.Materials Letters, 134, 126 (2014).

SiO2-ZnO core-shell nanowires were obtained through SiO

2

sputtering deposition on vertically aligned ZnO nanowires forest. A strongoxygen vacancies passivation were observed resulting in a drastic suppressionon visible light emissions in favor of UV ones.

Figure 1 – (a) Scanning electron microscopy and (b) HRTEM of as-grown ZnO

nanowires (FEI Titan 80-300 TEM-Inmetro).

Figure 2 – PL spectra at room temperature of ZnO nanowires: (a) as grown (line) and after

SiO2deposition (circles); (b) with SiO

2layer (line) and submitted to rapid thermal annealing

at 500°C (circles), 700°C (triangles) and 900°C (stars)

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Tunnel Barries for Graphene

SpintronicsB. Canto, J. E. Schmidt, D. L. Baptista

Introduction

Results

A detailed investigation of the structural and chemicalcharacteristics of thin evaporated Al

2O

3tunnel barriers of variable thickness

grown onto single-layer graphene sheets was performed. Advanced electronmicroscopy (HRTEM, STEM) and spectrum-imaging techniques were used toinvestigate the Co/Al

2O

3/graphene/SiO

2interfaces. Direct observation of

pinhole contacts was achieved using FIB cross-sectional lamellas. Spatiallyresolved EDX spectrum profiles confirmed the presence of direct point contactsbetween the Co layer and the graphene (Fig. 1).

Graphene is a potential material for spintronic applicationsbecause of the combination of its expected long spin lifetime and high electronmobility. However, previous studies showed that electrical spin injection fromsuch ferromagnetic electrodes in direct contact with graphene is not effectivebecause of the conductance mismatch. Instead, the use of a thin insulating layer(few nanometers) acting as a tunnel barrier between the graphene layer and themetal electrodes has proven to be an effective solution. Nevertheless, completecontrol of tunneling barrier fabrication on graphene sheets is still distant.Barrier structural and chemical non-uniformities seem to play a crucial role inthe experimental spin relaxation time values.

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Research outlook

Publications

[1] B. Canto, C. P. Gouvea, B. S. Archanjo, J. E. Schmidt, D. L. Baptista, On

the structural and chemical characteristics of Co/Al2O3/graphene interfaces for

graphene spintronic devices. Submitted (2014).

[2] B. Canto, Fabricação de dispositivos com contato túnel para spintrônica

em grafeno. PhD thesis (2014).

The high surface diffusion properties of graphene led to cluster-like Al

2O

3film growth, limiting the minimal possible thickness for complete

barrier coverage onto graphene surfaces using standard Al evaporationmethods. The results indicate a minimum thickness of nominally 3 nm Al

2O

3,

resulting in a 0.6 nm rms rough film with a maximum thickness reaching 5 nm.

Figure 1 – HAADF-STEM cross-sectional image of 1-nm-thick (nominal) barrier on

graphene; the Co layer clearly contacts the graphene directly in those pinhole regions.

In contrast, the graphene sample with a nominally 3-nm-thickAl

2O

3layer did not contain pinholes. An Al

2O

3layer having a maximum

thickness of ca. 5 nm and completely covering the whole graphene surface wasobserved (Fig. 2).

Figure 2 – TEM cross-sectional image of sample with 3-nm-thick (nominal) Al2O

3barrier on

graphene.

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Energy deposition of H and He ion

beams in hydroxyapatite filmsR. C. Fadanelli and M. Behar

Introduction

Results

At high proton energies, the experimental stopping power valuesare compatible with those provided by the different models. Besides, theagreement for the He ion beam between the experimental stopping data and thecalculated results is rather good, in particular around the maximum stoppingpower.

Ion-beam cancer therapy is a promising technique to treat deep-seated tumors; however, for an accurate treatment planning, the energydeposition by the ions must be well known both in soft and hard human tissues.Although the energy loss of ions in water and other organic and biologicalmaterials is fairly well known, scarce information is available for the hardtissues (i.e., bone), for which the current stopping power information relies onthe application of simple additivity rules to atomic data. More knowledge isneeded for the main constituent of human bone, calcium hydroxyapatite (HAp),which constitutes 58% of its mass composition.

In our work, the energy loss of H and He ion beams in HAp filmshas been obtained experimentally. The experiments have been performed usingthe Rutherford backscattering technique. These measurements are used as abenchmark for theoretical calculations (stopping power and mean excitationenergy) based on the dielectric formalism together with the MELF-GOS(Mermin energy loss function-generalized oscillator strength) method todescribe the electronic excitation spectrum of HAp. Finally, the mean excitationenergy is used to determine the depth-dose distributions needed for ion-beamcancer therapy.

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Research outlook

Publications

[1] Silvina Limandri, Pablo de Vera, Raul C. Fadanelli, Luiz C. C. M.Nagamine, Alexandre Mello, Rafael Garcia-Molina, Moni Behar, and IsabelAbril, Energy deposition of H and He ion beams in hydroxyapatite films: A

study with implications for ion-beam cancer therapy, Physical Review E, 89,022703 (2014).

An important outcome of this work for the stopping of H and Hebeams in HAp is the successful application to the calculation of the energy lossof charged particles in human cortical bone, whose presence intercepting theion-beam path in cancer treatment planning must be properly taken intoaccount.

Figure 1 - Depth-dose distributions of H and He ion beams in HAp, obtained with the SEICS

code at several energies, using our calculated I value (162.5 eV, black solid lines) and the I

value obtained applying Bragg’s rule (140.2 eV, red dashed lines). The distributions for H

and He ion beams in liquid water are shown by cyan solid lines.

The mean excitation energy I, obtained from the MELF-GOSmethodology, gives for HAp I = 159.5 eV and I = 162.5 eV, respectively, fromthe ab initio ELF calculation and from the phenomenological damped ELF.However, the I value of HAp we obtain by applying Bragg’s rule from eachHAp component is 140.2 eV. Since the indetermination in the I value of HApwill influence the energy deposition profile of ion beams as a function of thepenetration depth in the material, it was used the SEICS (simulation ofenergetic ions and clusters through solids) code to obtain the depth-dose profileof H and He ion beams in HAp for different values of I. The results are shownin Fig. 1. We conclude that differences in the I values give variations in theposition of the Bragg peak that are around 0.2–1.7 mm (2%–3%) for protonsand 0.2–2 mm (2%–3%) for He ion beams.

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D218O annealing effects in

SiO2/SiC structuresF. C. Stedile

Introduction

Results

Deuterium areal densities incorporated from water vaporannealings in different temperatures were obtained by D(3He,p)4He nuclearreaction analysis (NRA) which results are presented in Figure 1 (left). Thehighest amount of D was obtained in the sample with the SiO

2film deposited by

sputtering, route that presented the highest negative effective chargeconcentration and leakage current, suggesting that the D incorporation occurs indefects in the structure that exist prior to the annealing.

The properties of silicon carbide (SiC) make it a suitablesemiconductor to replace Si in devices used in high power, high frequency,and/or high temperature applications. Although recent advances in reducing theinterface state density (D

it) in the SiC/SiO

2interface allowed metal-oxide-

semiconductor (MOS) devices based on SiC to be commercially available,several aspects must still be investigated to allow to explore their fullpotentialities. For example, it is known that interaction with water vapor has amajor influence in electrical properties of both Si and SiC devices. To betterunderstand these effects, annealings in isotopically enriched water vapor(D

218O) of SiO

2/SiC structures formed following different routes (thermal

oxidation and/or sputtering deposition) were investigated.

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Research outlook

Publications

[1] E. Pitthan, S. A. Corrêa, G. V. Soares, H. I. Boudinov, and F. C. StedileSiO2/SiC structures annealed in D2

18O: Compositional and electrical effects,

Applied Physics Letters, 104 (2014)

[2] S. A. Corrêa, E. Pitthan, G. V. Soares, and F. C. Stedile Tracing the

incorporation of water in SiO2/SiC structures formed by oxide deposition and

thermal oxidation, Nuclear Instruments and Methods in Physics Research B,332 (2014)

The present results indicate that the route to obtain the SiO2film

on SiC has a major role in the water vapor interaction. Further investigationsintend to better understand the consequences of such interactions.

Figure 1 – (left) Deuterium areal densities in SiO2/SiC samples after annealing in D

218O

performed at different temperatures. SiO2/SiC samples prior the water annealing were

synthesized according to three different routes: oxidized in O2at 1100 °C for 10 h (thermally

grown SiO2films); only with a SiO

2film deposited by sputtering (deposited SiO

2film); or

oxidized for 5 min followed by SiO2film deposition by sputtering (5 min in 18O

2+SiO

2

deposition). Bars correspond to experimental accuracy of 10%. (right) Experimental

(symbols) excitation curves of the 18O(p,a)15N nuclear reaction around the resonance at 151

keV and the corresponding simulations (lines) for a SiO2film 20 nm thick thermally grown

on SiC submitted to D218O annealing at 600 °C and for SiO

2films 23 nm thick deposited by

sputtering and submitted to D218O annealing at 600 or at 800 °C. Inset: 18O profiles

obtained in the simulations using the same line types and colors. 4×1022 18O/cm3

corresponds to the oxygen concentration in stoichiometric SiO2.

18O profiles were determined by nuclear reaction profiling (NRP)using the narrow resonance in the 18O(p,α)15N cross-section curve and arepresented in Figure 1 (right). Isotopic exchange between oxygen from the watervapor and oxygen from SiO

2films deposited on 4H-SiC was observed in the

whole depth of the films, differently from the behavior of SiO2films thermally

grown on 4H-SiC. Such result evidences that the route used in the SiO2/SiC

formation also influences the oxygen incorporation.

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Thermally-driven H interaction with

HfO2 films deposited on Ge(100)G.V. Soares

Introduction

Results

D uptake in HfO2films crystallized at 500ºC in the cubic phase are

show in Fig. 1, which shows D areal densities as a function of the D2annealing

temperature for 5 (squares) and 100 nm (circles) thick HfO2films on Ge

submitted (full symbols) or not (open symbols) to a previous N2annealing. At

300ºC, D incorporation is the same for both thicknesses (5x1013 D.cm-2),indicating that the crystalline structure and/or the thickness of the film play aminor role in D concentration at this temperature. This result corroborates thatmost of the D is incorporated in the interface region of the HfO

2/Ge. At higher

annealing temperatures, a higher D incorporation is observed in films annealedin N

2, as well as in the thicker films. This suggests that (i) D is incorporated in

the bulk of the HfO2films for temperatures above 400ºC and (ii) HfO

2cubic

phase presents more sites for D incorporation. This second point is probablyrelated to the formation of a higher density of grain boundaries when comparedto the amorphous HfO

2, since the films crystallized in the cubic phase also

present some portions of the monoclinic phase.

There has been significant research on high-mobilitysemiconductors due to their potential to replace silicon (Si) in future MOSFETs.Germanium (Ge) has the highest hole mobility of all semiconductor materials,however, it has been reported that high-k films on Ge present a high interfacestate density (D

it). In this way, different approaches have been investigated in

order to improve the electrical characteristics of the dielectric/Ge interface, suchas the use of hydrogen post-deposition annealing (PDA).

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Research outlook

Publications

[1] G.V. Soares, T.O. Feijó, I.R.J. Baumvol, C. Aguzzoli, C. Krug, C. Radtke,Thermally-driven H interaction with HfO2 films deposited on Ge(100) and

Si(100), Applied Physics Letters, 104, 042901 (2014)

These results evidence that hydrogen annealing induces physico-chemicalmodifications in HfO

2/Ge structures beyond passivation of interfacial defects

like in the SiO2/Si system. The control of such modifications is a key issue for

obtaining dielectric/Ge structures with the desired characteristics. Future workswill focus in the use of gate stacking aiming at further reduction in the electricactive defects at the dielectric/Ge interface.

Figure 1 - D areal densities as a function of D2 annealing temperature for 5 (squares) and

100 nm (circles) thick HfO2 films deposited on Ge. As-deposited samples (open symbols) and

those annealed in N2 (full symbols) were annealed in D

2 at the indicated temperatures. Lines

are only to guide the eyes.

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SiNxOy Films Deposited by Reactive

SputteringG. Sombrio, P. Franzen, R. Maltez and H. Boudinov

Introduction

Results

In this work, we used samples prepared by reactive sputtering tocreate layers of silicon oxy-nitride. By carefully controlling the amount ofnitrogen, argon and oxygen mixture in the sputtering chamber we controlled thecomposition and the subsequent photoluminescence emission.

TABLE I: Compositions of the samples, extracted from RBS spectra

Silicon is by far the most used material in the microelectronics

industry. The reasons for this preference are its excellent electrical andmechanical properties. However, even with its favorable characteristics, siliconhas limitations. Silicon being an indirect band gap semiconductor is a poor lightemitter. In the current state of device integration, it is highly desirable tointegrate the light source inside the same chip. Many attempts were made toeliminate this obstacle and the problem is a subject of continuing research.Some of the most promising results were obtained by creating siliconnanostructures embedded in dielectric materials, such as porous silicon, siliconquantum dots and erbium doped silicon quantum dots . Those low-dimensionalstructures disturb the band gap configuration, increasing the radiativerecombination rate of the excitons and therefore can result in improved lightemission.

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Research outlook

Publications

[1] G. Sombrio, P.L. Franzen, R.L. Maltez, L.G. Matos, M.B. Pereira, H.Boudinov. Photoluminescence from SiNxOy films deposited by reactive

sputtering, J. Phys.D: Appl. Phys. 46, 235106 (2013)

[2] G. Sombrio, P.L. Franzen, R.L. Maltez, H. Boudinov, Study of

Photoluminescence in SiNx and SiNxOyFilms Deposited by Reactive Sputtering,

28th Symposium on Microelectronics Technology and Devices- SBMICRO ,Curitiba, Brazil (2013)

RF reactive sputtering technique from Si target was employed forthe fabrication of SiNxOy samples . The presence of UV band emission with anenergy of about 3.8 eV (320 nm) was demonstrated, when the oxygenconcentration increases, so this emission is possible to be explored for UVelectroluminescence applications.

Figure 1 - Bright field image of sample PL2 and the diffraction partners after annealing

obtained by TEM measurements.

Fig. 1 shows TEM images and diffraction patterns of the samplePL2 annealed at 500 °C for 60 min into argon atmosphere. This image shows acluster that presents different phases, indentified by diffraction patterns. The A,B, C and D regions present α-Si

3N

4, β-Si

3N

4, silicon oxy-nitride and

amorphous Si3N

4phases, respectively . The photoluminescence spectra (not

shown) are shifted to the UV region for the sample with higher oxygenconcentration .

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Insulating characteristics of polyvinyl

alcohol for organic electronicsE.A. van Etten, E.S. Ximenes, L.T. Tarasconi, I.T.S. Garcia, M.M.C. Forte

and H. Boudinov

Introduction

Results

The goal of this work is to evaluate the effect of differentmolecular weight, hydrolysis degree and reticulation on the performance of thepolyvinyl alcohol (PVA) when used as a dielectric material in organic fieldeffect transistors. Three types of PVA were obtained from Sigma-Aldrich wereevaluated. The physical characteristics of these polymers are described in theTable I. Ammonium Dichromate (ADC) was used as a cross linking agent.

TABLE I. PVA physical characteristics

Great progress has been reported on the development of organicfield effect transistors (OFET), which became a very promising technology togain space on low cost, high volume and flexible applications. OFET can beconstructed on different substrates imparting many unconventional properties tothe device, such as biocompatibility . There have been a large amount ofresearch groups reporting advances on the semiconductor side of thedevelopment, but much less attention has been paid on the development of asuitable organic dielectric layer. The utilization of a polymeric gate insulator islikely to be an important step in developing an all-organic transistor and flexibleelectronics. The chemical structure of a polymer gate dielectric can impartvarious surface and bulk properties that strongly influence a device’sperformance, making its composition an important factor affecting thefabrication and performance of OFETs.

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Research outlook

Publications

[1] E.A. van Etten, E.S. Ximenes, L.T. Tarasconi, I.T.S. Garcia, M.M.C. Forteand H. Boudinov, Insulating characteristics of polyvinyl alcohol for integrated

electronics, Thin Solid Films 568, 111 (2014)

[2] E.A. van Etten, E.S. Ximenes, L.T. Tarasconi, I.T.S. Garcia, M.M.C. Forteand H. Boudinov, Thermal and Electrical Characterization of Polyvinyl

Alcohol focusing on Organic Electronics Applications, 28th Symposium onMicroelectronics Technology and Devices- SBMICRO, Curitiba, Brazil (2013)

Figure 1 I-V Characteristics of the six studied samples.

Fig. 1 presents the insulation response of the 6 studied samples.Considering that the insulation effect on any layer is strongly dependent on itsthickness, we normalized the responses to the electrical field, by dividing theapplied voltage by the dielectric thickness.

-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0

-30n

-20n

-10n

0

Cu

rre

nt [A

]

Electric Field [MV/cm]

PVA1

PVA1cr

PVA2

PVA2cr

PVA3

PVA3cr

It was demonstrated that PVA is a promising candidate to be usedas a gate dielectric in OFET structures due to its suitable properties such as lowleakage current, high dielectric constant, simple application and good filmformation properties. It also permits the engineering of its structure, throughcontrol of cross linkage, hydrolysis degree and molecular weight, which can beused to optimize the characteristics of the film depending of the desiredproperties. The major impact on the polymer properties is given by reticulation.The choice of PVA for an organic insulator must be on cross-linked polymerwith high molecular weight and incomplete hydrolyzation.

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Elemental Quantification of

Large Gunshot Residues J. F. Dias

Introduction

Results

The analysis of the primer revealed that barium is found inrelatively large concentrations, followed by lead and antimony. However, itmust be stressed that the composition of each ammunition may vary accordingto the manufacturer and its purpose. Different applications may requireparticular compositions. Therefore, the results shown here relate specifically tothe ammunition under study.

In the present work we embarked on the evaluation of the Sb/Pb,Ba/Pb and Sb/Ba elemental ratios found in relatively large particles (of theorder of 50 - 150 µm across) ejected in the forward direction when a gun isfired. These particles are commonly referred to as gunshot residues (GSR). Theaim of this work is to compare the elemental ratios of the GSR with those foundin the primer of pristine cartridges in order to check for possible correlations. Tothat end, the elemental concentration of gunshot residues and the respectiveammunition were investigated through PIXE (Particle-Induced X-ray Emission)and micro-PIXE techniques. The ammunition consisted of a .38 SPL caliber(ogival lead type) charged in a Taurus revolver. Pristine cartriges were takenapart for the PIXE measurements. The shooting sessions were carried out in arestricted area at the Forensic Institute at Porto Alegre. Residues ejected atforward directions were collected on a microporous tape. The PIXEexperiments were carried out employing 2.0 MeV proton beams with a beamspot size of 1 mm2. For the micro-PIXE experiments, the samples wereirradiated with 2.2 MeV proton beams of 2 x 2 µm2.

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Research outlook

Publications

The presente study will be extended to other types of ammunitionin order to provide a broader perspective on the subject.

Figure 1 – Elemental maps of Sb, Ba and Pb obtained for two distinct particles depicted on

the top (particle 1) and bottom (particle 2).

The present results do not indicate any degree of correlationbetween the elemental concentrations of the primer and the GSR. The degree ofdependence of these results in the ammunition and the firearm employed in thepresent study can be assessed by new measurements were these parameters arechanged.

The relative concentrations of barium, antimony and lead found inthe residues shows that there is no correspondence with those results obtainedfor the primer. In this case, lead becomes the element with the highestconcentration of all. Clearly, a complex mechanism of nucleation during theburnout takes place. On one hand, lead stemming from other parts of thecartridge take part in this process. But the increase of lead alone cannot explainthe differences obtained for the primer and the GSR. Barium and antimony alsohave substantial changes during the burnout, leading to the results shown here.

[1] A. Duarte, L. Manfredi, C. T. Souza, E. M. Stori, J. F. Dias, Elemental

quantification of large gunshot residues. Nuclear Instruments and Methods inPhysics Research B 345, 2015 (in press).

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Magnetic interactions in exchange-

coupled yet unbiased IrMn/NiCu

bilayersR. Cichelero, A. Harres, K. D. Sossmeier,

J. E. Schmidt, J. Geshev

Introduction

Results

AF/FM bilayer with TN > TC and composition Si(100)/Ni60Cr

40(6 nm)/

Ir20Mn

80(7 nm)/Ni

75Cu

25(30 nm)/Cr(4 nm) has been grown on Si substrate.

Pieces of the as-made films have been subjected to 40 keV irradiation with He+

or Ge+ ions at different fluences. M(H), DCD and IRM curves were measuredvia an alternating gradient-force magnetometer with H applied in the plane ofthe films. Henkel plots together with the corresponding δM ones have beenconstructed. Aiming at a better understanding and interpretation of theexperimental magnetization data, computational simulations based on theLandau–Lifshitz–Gilbert equation (LLG) were implemented.

Very recently, the remanence plots method has been extended to systemswith shifted hysteresis loops resulting in a number of distinct remanence plotsfour times greater than that obtained classically. Also, another two types ofremanence plots related to the asymmetry of the magnetization reversal havebeen introduced and the method has been applied to polycrystalline Co/IrMnexchange-bias films.

The present work employs the remanence plots technique in order toestimate the interactions present in IrMn/NiCu bilayers and check if there existsa correlation between the interactions’ type and the HC variations caused by ionirradiation. Model simulations were also performed and usedfor the interpretation of the experiments..

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Research outlook

Publications

[1] R. Cichelero, A. Harres, K. D. Sossmeier, J. E. Schmidt and J. Geshev,Magnetic interactions in exchange-coupled yet unbiased IrMn/NiCu bilayers,

Journal of Physics: Condensed Matter, 25, 426001 (2013)

Our findings show that systematic remnant magnetization experiments can be used to selectively obtain information on modifications caused, e.g., by ion irradiation in each layer of the film.

Figure 1 – HC , δM

max, |δM

min|and H(δM

min) vs. the fluence of the He+ irradiation or Ge+

implantation (low-fluence region); the inset gives the full-range variations for the He+

irradiated samples.

Both experimental and model results showed that the remanence plotstechnique allows outcomes of interactions inside the FM layer to bedistinguished from those coming from changes of the exchange coupling at theFM/AF interface, and also that demagnetizing interaction effects could beachieved without the presence of dipolar interactions. The excellent agreementbetween experiment and model implies that the magnetic characteristics of oursamples might be determined by exchange interactions only, and that the HC

enhancement has been formally attributed to the rotatable anisotropy thataccounts for interfacial spins which switch together with the FM magnetization.

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Self-Diffusion in HfO2 Studied by

Electron SpectroscopyM. Vos, P. L. Grande, D. K. Venkatachalam, S. K. Nandi,

R. G. Elliman

Introduction

Results

Oxygen self-diffusion was investigated by monitoring theredistribution of 16O

2and 18O

2in a special sandwich structure [1] . The oxygen

elastic peak for 40 keV electrons was resolved for different annealingtemperatures. There was a systematic movement of the maximum of the peak tolower energy losses with increasing annealing temperature. This is due to 18Omoving from the underlying Hf18O

2film towards the surface. The diffusion

lengths are shown in Fig. 1. The dashed line is proportional to the expecteddiffusion length (for a constant anneal time). At first sight this appears to fit theexperimental data reasonably well. However, at the lower temperatures, whereconventional annealing experiments were also done, the diffusion length isfound to increase much more slowly with annealing time than expected.

Self-diffusion is an important but difficult to study phenomenon.Even for silicon, probably the best studied and understood material, the topic ofself-diffusion remains an active field of research. There are few options formeasuring self-diffusion, with most studies relying on the use of radioactive orlow natural abundance isotopes. Analysis is then typically performed withsecondary ion mass spectroscopy or other ion-beam based techniques. Oxygendiffusion in HfO

2and HfSiO

xalloys is of particular interest, as they are being

used to replace SiO2as the gate dielectric in integrated circuits and are of

interest for the fabrication of resistive random access memories based onresistive switching.

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Research outlook

Publications

[1] M. Vos, P.L. Grande, D.K Venkatachalam, S.K. Nandi and R.G. Elliman,Oxygen Self-Diffusion in HfO2 Studied by Electron Spectroscopy, PhysicalReview Letters, 112, 175902 (2014)

The measured RTA diffusion data were consistent with oxygenhaving an activation energy for self-diffusion near 1 eV at temperatures above700°C. At lower temperatures the diffusivity decreases significantly with time,indicating that more than one mechanism is operative.

Figure 1 –The diffusion length derived from fitting the ERBS spectra with a 18O and a 16O

elastic peak. The obtained diffusion lengths increased only slightly with annealing times. In

(b) we show the obtained D values which decrease with increasing annealing times. The

dashed line is proportional to the expected D values and diffusion lengths for an activation

energy of 1 eV.

In the present context, it is interesting that the activation energy of1 eV that seems to fit the higher temperature data, is consistent with valuesemployed in models of diffusion in resistive random access memory structuresand determined by theoretical means. While this is encouraging, it is clear thatthe current experiments go only part way to addressing diffusion in HfO

2and a

detailed understanding is still a difficult task.

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Structural characterization of planar

sets of NPs in a solid matrixD. F. Sanchez, G. Marmitt, C. Marin, D. L. Baptista, G. de M.

Azevedo, P. L. Grande, P. F. P. Fichtner

Introduction

Results

Au atoms were deposited onto 200 nm thick SiO2films, thermally

grown from (001) Si wafers. The deposition was performed by RF magnetronsputtering, in a pure Ar plasma and with an RF power of 20 W, using an AJAmagnetron sputtering device (ATC Orion-8 UHV from NANOLAB, Institute ofPhysics - UFRGS). A set of three samples containing different amounts of Auwere obtained considering deposition times of 25, 50 and 100 s. Withoutbreaking the vacuum, immediately after the Au deposition the samples werecovered with a 35 nm thick layer of SiO

2, deposited using similar conditions but

with an RF power of 90 W for 67. In this work we investigated three planar setsof buried Au NPs embedded into SiO2 matrix synthesized with differentsputtering deposition times.

The physical properties of metallic nanoparticle (NP) systemsembedded in dielectric substrates depend not only on the NP parameters(location, size distribution and number concentration) but also on the quality ofthe dielectric matrix around the NPs. This applies for photonic devices and mostparticularly for the development of nonvolatile, high areal number density andlow power memory devices. In the present contribution [1] we demonstratedthat Medium Energy Ion Scattering (MEIS) measurements and RutherfordBackscattering Spectrometry (RBS), in combination with pertinent data fromTransmission Electron Microscopy (TEM) and/or Grazing Incidence SmallAngle X-ray Scattering (GISAXS) can indeed provide a rather complete andaccurate characterization of buried NP systems. Our studies are performedconsidering a model case system consisting of planar arrangements of Au NPscontaining three distinct Au concentrations embedded in a SiO

2film.

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Research outlook

Publications

[1] D.F. Sanchez, G. Marmitt, C. Marin, D.L. Baptista, G. de M. Azevedo, P. L.Grande, P.F. P. Fichtner, New approach for structural characterization of

planar sets of nanoparticles embedded into a solid matrix, Scientific Reports,3, 3414 (2013)

In this work we demonstrate that Medium Energy Ion Scattering(MEIS) measurements in combination with Transmission Electron Microscopy(TEM) or Grazing Incidence Small Angle X-Ray Scattering (GISAXS) canprovide a complete characterization of nanoparticle (NP) systems embeddedinto dielectric films.

Figure 1 - Experimental and simulated two-dimensional map of ion scattering intensities

(2D-MEIS spectra) for the 25, 50 and 100 s deposited samples taken with 150 keV He+ ions.

We observed that, for the samples prepared with 25 and 50 s, asignificant fraction of the total amount of Au atoms becomes dissolved withinthe dielectric matrix around the NPs. Combining MEIS, RBS, TEM andGISAXS measurements, we were able to quantify the fraction of Au atomseffectively contained in the NPs, as well as the concentration and depthdistribution of the complementary Au amount dispersed in the matrix aroundthe NPs. These results open new perspectives for a more completecharacterization of embedded metallic NPs systems into a solid matrix and theimprovement NP bases devices.

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Ne-He bubble formation in

co-implanted Si(111) substratesR.L. Maltez

Introduction

Results

We have found [3] that bubbles are always present in Ne-He hybridsystem, even after annealing at 1000oC. However, while bubbles have increasedin size as increasing the annealing temperature, the channeling in the sampleshas rather improved. It is an opposite behavior to the one expected if thedechanneling was a consequence of over-pressurized bubbles: the channelingdegree in the samples should be worst during bubbles coarsening. In this sense,by RBS/C we do not observe clear correlation of dechanneling as a result ofbubble formation for all investigated temperature range.

It was reported in a previous work [1,2] that formation of over-pressurized bubbles in a Si(111) substrate is able to improve the crystallinequality of GaN/AlN (AlN is a buffer layer) structures heteroepitaxialy grown onit. The bubbles band in the substrate attracts the misfit dislocations generated atAlN/Si and GaN/Si interfaces and redirects them toward the substrate, thusreducing the dislocation density in the overgrown GaN layer. We are nowinvestigating Si(111) samples containing Ne and Ne-He bubbles obtained fromdifferent implantation parameters and annealing temperatures (Ne bubbles arestable at high temperatures). Our final purpose is to find bubble systems able tokeep comparable pressure to the He case even at higher temperature than the650oC threshold of He. This requires understanding of which parameters playfundamental role on defining the morphology and pressure in such co-implantedsystem. Ne implantation was performed with the sample kept at 350°C toreduce implantation damage. These samples were submitted to RTA annealingfor 2 minutes in the 400 to 1000°C temperature range. Characterization byRutherford Backscattering Spectrometry/Channeling (RBS/C), Elastic RecoilDetection (ERD) and Transmission Electron Microscopy (TEM) are employed.

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Research outlook

Publications

[1] Z. Liliental-Weber, R. L. Maltez, J. Xie, e H. Morkoc, Propagation of misfit

dislocations from AlN/Si interface into Si, Journal of Crystal Growth, 310, 3917(2008)

[2] Z. Liliental-Weber, R. L. Maltez, J. Xie, e H. Morkoc, US patent # 8,008,181

[3] L.G. Matos, R.M.S. dos Reis and R.L. Maltez, Ne-He bubble formation in

co-implanted Si(111) substrates, Thin Solid Films, 548, 465 (2013)

Since residual implantation damage plays an important role ondefining the pressure and morphology of such co-implanted system, the nextstep is aiming to an almost total damage annihilation during the implantation.Increasing of the sample implantation temperature and also interchange theimplantation order of the Ne and He ions are the present status of theinvestigation.

An special set (1x1015 cm-2 Ne and 1x1016 cm-2 He), however, hasshowed slightly different thermal behavior, mainly for the annealingtemperatures of 400 and 600oC: they show channeling spectra whosedechanneling in the implantation depth overcomes the as-implanted one. Inaddition, this specific co-implantation set and temperatures also demonstrated apeak shape for the dechanneling which resembles the one observed for the Hepure case. However, we have observed a consistent correlation betweenchanneling improvement and implantation damage reduction, suggesting thatdefects are the main cause of the observed dechanneling for the systemscontaining Ne. From TEM analysis it was also clear that bubbles in the hybridsystem are all spherical ones and does not recall any similarity to the Hesystem, even with Ne:He ratio of 1:10. Thus, from a morphologic point of view,the He and Ne hybrid system is very alike to Ne pure bubbles for the chosenimplantation paramaters.

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Effect of ion irradiation on the thermal

stability of thin polymer filmsC.R.B. Esteves, R.S. Thomaz, L.I. Gutierres, R.M. Papaléo

Introduction

Results.

Polymer thin films are commonly used as protective or activelayers in a large number of technological applications, from lithography tomedical implants. One of the most common methods to prepare the films isspin-casting from diluted solutions. Thin polymeric films produced by spin-coating are, however, usually metastable systems due to the rapid decrease inmobility of the chains and freezing of molecular conformation during the fastevaporation of the solvent. Because of that, polymer molecules in thin layersare often in an unfavorable coil conformation, as compared to bulk conditionsand may present structure evolution upon mild thermal treatments, leading tosurface relaxation, roughening, or full dewetting of the layers. Detailedknowledge of the factors controlling stability of thin polymer coatings is thus ofutmost importance for successful processing and reliable functioning ofnanostructured devices based on polymers.

In this work, we have investigated the stability of poly(methylmethacrylate) films, exposed to a low fluence irradiation, against annealingunder different atmospheres (air, N

2and vacuum). 300 keV H+, 2 MeV H+ and

18 MeV Au7+ ions were used to bombard the samples, using various fluences,depending on the ion species and energy. The films subjected to thermaltreatments, without any irradiation showed an increased roughness; the effectbeing more pronounced for samples annealed under vacuum. The effect of theirradiation only on samples bombarded at room temperature was to slightlyincrease the surface roughness with increasing fluence, thus favoring thedewetting process. This was observed for both H+ and Au7+ irradiations.

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Publication

[1] C.R.B. Esteves, R.S. Thomaz, L.I. Gutierres, R.M. PapaléoEffect of ion irradiation on the thermal stability of thin polymer films. Nucl.Instr. And Meth. In Phys Res. B, 314, 71 (2013)

The surface morphology of the PMMA films responded in arelatively complex way to the different conditions of ion bombardment. Theeffect of irradiation to a fixed moderate fluence on the stability of the filmmorphology upon subsequent annealing can be seen in the SFM images inFig 1. Those images illustrate the evolution of the surface topography withtime for the control and irradiated films (40nm thick). The surface ofunirradiated films subjected only to the thermal treatment under vacuum (a-c), evolve slightly with time, tending asymptotically to a roughness valueclose to 0.45 nm. For samples pre-treated with H+ radiation (d-f), asmoothening effect was observed upon annealing, stabilizing the film atroughness levels below those of control samples (films not exposed to thebeam but annealed under the same conditions). Irradiation with 18 MeV Auions (g-i) , on the contrary, destabilized the films, causing strong changes insurface morphology, and a roughness increase to levels close to ~2nm after15h of annealing.

Figure 1 - Stability of irradiated and control PMMA films of thickness h=40 nm upon thermal

annealing at 100°C. (a-c) SFM images of control films not subjected to any bombardment, but

which underwent the same thermal treatment as the bombarded samples. (d-f) SFM images of

samples irradiated by 1014 ions/cm2 of 2 MeV H+. (g-i) SFM images of samples irradiated by 1011

ions/cm2 of 18 MeV Au7+.

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[1] B. Afra, M. D. Rodriguez, C. Trautmann, O. H. Pakarinen, F. Djurabekova, K. Nordlund,

T. Bierschenk, R. Giulian, M. C. Ridgway, G. Rizza, N. Kirby, M. Toulemonde and P. Kluth, SAXS

investigations of the morphology of swift heavy ion tracks in alpha-quartz, Journal of Physics-

Condensed Matter, 25, 045006 (2013).

[2] F. A. Almeida, E. Salgueiredo, F. J. Oliveira, R. F. Silva, D. L. Baptista, S. B. Peripolli and

C. A. Achete, Interfaces in Nano-/Microcrystalline Multigrade CVD Diamond Coatings, Acs

Applied Materials & Interfaces, 5, (2013).

[3] C. R. Arbeitman, M. F. del Grosso, M. Behar and G. Garcia Bermudez, Effects of

irradiated biodegradable polymer in endothelial cell monolayer formation, Nuclear Instruments

& Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 314,

(2013).

[4] B. S. Archanjo, P. F. Siles, C. K. B. Q. M. Oliveira, D. L. Baptista and B. R. A. Neves,

Characterization of Metal Oxide-Based Gas Nanosensors and Microsensors Fabricated via Local

Anodic Oxidation Using Atomic Force Microscopy, Advances in Materials Science and

Engineering, 898565 (2013).

[5] E. G. Barrera, F. C. Stedile, M. O. de Souza, M. S. Lacerda Miranda, R. F. de Souza and K.

Bernardo-Gusmao, Ethylene polymerization using metallocene catalyst supported on hybrid

indenyl silica produced by sol-gel process, Applied Catalysis a-General, 462, (2013).

[6] D. Benedetti, E. Nunes, M. Sarmento, C. Porto, C. E. Iochims dos Santos, J. F. Dias and J.

da Silva, Genetic damage in soybean workers exposed to pesticides: Evaluation with the comet

and buccal micronucleus cytome assays, Mutation Research-Genetic Toxicology and

Environmental Mutagenesis, 752, (2013).

[7] T. Bierschenk, B. Afra, M. D. Rodriguez, R. Giulian, C. Trautmann, S. Mudie, M. C.

Ridgway and P. Kluth, Effect of electronic energy loss on ion track formation in amorphous Ge,

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with

Materials and Atoms, 326, (2014).

[8] T. Bierschenk, R. Giulian, B. Afra, M. D. Rodriguez, D. Schauries, S. Mudie, O. H.

Pakarinen, F. Djurabekova, K. Nordlund, O. Osmani, N. Medvedev, B. Rethfeld, M. C. Ridgway

and P. Kluth, Latent ion tracks in amorphous silicon, Physical Review B, 88, 174111 (2013).

[9] E. M. Bittar, C. Adriano, T. M. Garitezi, P. F. S. Rosa, L. Mendonca-Ferreira, F. Garcia, G.

D. Azevedo, P. G. Pagliuso and E. Granado, Co-Substitution Effects on the Fe Valence in the

BaFe2As2 Superconducting Compound: A Study of Hard X-Ray Absorption Spectroscopy,

Physical Review Letters, 107, 267402 (2011).

[10] M. A. S. Boff, R. Hinrichs, B. Canto, F. Mesquita, D. L. Baptista, G. L. F. Fraga and L. G.

Pereira, Turn on of new electronic paths in Fe-SiO2 granular thin film, Applied Physics Letters,

105, 143112 (2014).

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[11] N. M. Bom, M. H. Oliveira, Jr., G. V. Soares, C. Radtke, J. M. J. Lopes and H. Riechert,

Synergistic effect of H2O and O-2 on the decoupling of epitaxial monolayer graphene from

SiC(0001) via thermal treatments, Carbon, 78, (2014).

[12] N. M. Bom, G. V. Soares, S. Hartmann, A. Bordin and C. Radtke, GeO2/Ge structure

submitted to annealing in deuterium: Incorporation pathways and associated oxide

modifications, Applied Physics Letters, 105, 141605 (2014).

[13] L. A. Boufleur, C. E. Iochims dos Santos, R. Debastiani, M. L. Yoneama, L. Amaral and J.

F. Dias, Elemental characterization of Brazilian canned tuna fish using particle induced X-ray

emission (PIXE), Journal of Food Composition and Analysis, 30, (2013).

[14] F. L. Bregolin, M. Behar and U. S. Sias, Structural and optical properties of Ge

nanocrystals obtained by hot ion implantation into SiO2 and further ion irradiation, Journal of

Luminescence, 132, (2012).

[15] F. L. Bregolin, P. Franzen, H. Boudinov, U. S. Sias and M. Behar, Low temperature and

decay lifetime photoluminescence of Eu and Tb nanoparticles embedded into SiO2, Journal of

Luminescence, 153, (2014).

[16] F. L. Bregolin, U. S. Sias and M. Behar, Photoluminescence and structural studies of Tb

and Eu implanted at high temperatures into SiO2 films, Journal of Luminescence, 135, (2013).

[17] L. N. Carli, T. S. Daitx, G. V. Soares, J. S. Crespo and R. S. Mauler, The effects of silane

coupling agents on the properties of PHBV/halloysite nanocomposites, Applied Clay Science,

87, (2014).

[18] D. S. Correa, J. C. O. Pazinato, M. A. de Freitas, L. S. Dorneles, C. Radtke and I. T. S.

Garcia, Tungsten Oxide Thin Films Grown by Thermal Evaporation with High Resistance to

Leaching, Journal of the Brazilian Chemical Society, 25, (2014).

[19] S. A. Correa, E. Pitthan, G. V. Soares and F. C. Stedile, Tracing the incorporation of

water in SiO2/SiC structures formed by oxide deposition and thermal oxidation, Nuclear

Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and

Atoms, 332, (2014).

[20] S. A. Correa, G. V. Soares, P. Tanner, J. Han, S. Dimitrijev and F. C. Stedile, Hydrogen

Incorporation Dependence on the Thermal Growth Route in Dielectric/SiC Structures, Ecs

Journal of Solid State Science and Technology, 2, (2013).

[21] W. L. da Silva, M. A. Lansarin, F. C. Stedile and J. H. Z. dos Santos, The potential of

chemical industrial and academic wastes as a source of supported photocatalysts, Journal of

Molecular Catalysis a-Chemical, 393, (2014).

[22] C. de Melo, S. Larramendi, V. Torres-Costa, J. Santoyo-Salazar, M. Behar, J. Ferraz Dias

and O. de Melo, Enhanced ZnTe infiltration in porous silicon by Isothermal Close Space

Sublimation, Microporous and Mesoporous Materials, 188, (2014).

[23] E. de Menezes, M. Nunes, L. Arenas, S. P. Dias, I. S. Garcia, Y. Gushikem, T. H. Costa and

E. Benvenutti, Gold nanoparticle/charged silsesquioxane films immobilized onto Al/SiO2

surface applied on the electrooxidation of nitrite, Journal of Solid State Electrochemistry, 16,

(2012).

[24] E. L. de Souza, H. Boudinov and R. R. B. Correia, Multiple position sensitive

photodetector for optical differential detection, Sensors and Actuators a-Physical, 195, (2013).

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[25] R. Debastiani, C. E. I. dos Santos, M. L. Yoneama, L. Amaral and J. F. Dias, Ion beam

analysis of ground coffee and roasted coffee beans, Nuclear Instruments & Methods in Physics

Research Section B-Beam Interactions with Materials and Atoms, 318, (2014).

[26] A. Debelle, J. Channagiri, L. Thome, B. Decamps, A. Boulle, S. Moll, F. Garrido, M. Behar

and J. Jagielski, Comprehensive study of the effect of the irradiation temperature on the

behavior of cubic zirconia, Journal of Applied Physics, 115, 183504 (2014).

[27] S. Decoster, C. J. Glover, B. Johannessen, R. Giulian, D. J. Sprouster, P. Kluth, L. L.

Araujo, Z. S. Hussain, C. Schnohr, H. Salama, F. Kremer, K. Temst, A. Vantomme and M. C.

Ridgway, Lift-off protocols for thin films for use in EXAFS experiments, Journal of Synchrotron

Radiation, 20, (2013).

[28] T. Dias, E. Menendez, H. Liu, C. Van Haesendonck, A. Vantomme, K. Temst, J. E.

Schmidt, R. Giulian and J. Geshev, Rotatable anisotropy driven training effects in exchange

biased Co/CoO films, Journal of Applied Physics, 115, 243903 (2014).

[29] R. C. Fadanelli, J. F. Dias and M. Behara, Coulomb heating behavior of fast light

diclusters thorough the Si < 110 > direction: influence of the mean charge state, European

Physical Journal D, 68, 1 (2014).

[30] J. A. Fernandes, P. Migowski, Z. Fabrim, A. F. Feil, G. Rosa, S. Khan, G. J. Machado, P. F.

P. Fichtner, S. R. Teixeira, M. J. L. Santos and J. Dupont, TiO2 nanotubes sensitized with CdSe

via RF magnetron sputtering for photoelectrochemical applications under visible light

irradiation, Physical Chemistry Chemical Physics, 16, (2014).

[31] W. S. Fernandez, J. F. Dias, L. A. Boufleur, L. Amaral, M. L. Yoneama and J. F. Dias,

Bioacumulation of trace elements in hepatic and renal tissues of the white mullet Mugil curema

Valenciennes, 1836 (Actinopterygii, Mugilidae) in two coastal systems in southeastern Brazil,

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with


[32] A. Gasperini, A. Malachias, G. Fabbris, G. Kellermann, A. Gobbi, E. Avendano and G. D.

Azevedo, Investigation of indirect structural and chemical parameters of GeSi nanoparticles in

a silica matrix by combined synchrotron radiation techniques, Journal of Applied

Crystallography, 45, (2012).

[33] J. A. Gomes, G. M. Azevedo, J. Depeyrot, J. Mestnik, F. L. O. Paula, F. A. Tourinho and R.

Perzynski, Structural, Chemical, and Magnetic Investigations of Core-Shell Zinc Ferrite

Nanoparticles, Journal of Physical Chemistry C, 116, (2012).

[34] R. V. Goncalves, P. Migowski, H. Wender, A. F. Feil, M. J. M. Zapata, S. Khan, F.

Bernardi, G. M. Azevedo and S. R. Teixeira, On the crystallization of Ta2O5 nanotubes:

structural and local atomic properties investigated by EXAFS and XRD, Crystengcomm, 16,

(2014).

[35] E. Granado, L. Mendonca-Ferreira, F. Garcia, G. D. Azevedo, G. Fabbris, E. M. Bittar, C.

Adriano, T. M. Garitezi, P. F. S. Rosa, L. F. Bufaical, M. A. Avila, H. Terashita and P. G. Pagliuso,

Pressure and chemical substitution effects in the local atomic structure of BaFe2As2, Physical

Review B, 83, 184508 (2011).

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[36] P. L. Grande and M. Vos, Exploring the Barkas effect with keV-electron scattering,

Physical Review A, 88, 052901 (2013).

[37] P. L. Grande, M. Vos, D. K. Venkatachalam, S. K. Nandi and R. G. Elliman, Determination

of thickness and composition of high-k dielectrics using high-energy electrons, Applied Physics

Letters, 103, 071911 (2013).

[38] N. Hernandez-Como, V. Martinez-Landeros, I. Mejia, F. S. Aguirre-Tostado, C. D.

Nascimento, G. D. Azevedo, C. Krug and M. A. Quevedo-Lopez, Defect control in room

temperature deposited cadmium sulfide thin films by pulsed laser deposition, Thin Solid Films,

550, (2014).

[39] C. E. Iochims dos Santos, R. Debastiani, W. Przybylowicz, V. Manfroi, L. Amaral, M. L.

Yoneama and J. F. Dias, Study of the elemental composition of wine stoppers using PIXE, X-Ray

Spectrometry, 42, (2013).

[40] K.-W. Jung, H. Yu, W. J. Min, K.-S. Yu, M. A. Sortica, P. L. Grande and D. Moon,

Quantitative Compositional Profiling of Conjugated Quantum Dots with Single Atomic Layer

Depth Resolution via Time-of-Flight Medium-Energy Ion Scattering Spectroscopy, Analytical

Chemistry, 86, (2014).

[41] P. Kluth, J. Sullivan, W. Li, R. Weed, C. S. Schnohr, R. Giulian, L. L. Araujo, W. Lei, M. D.

Rodriguez, B. Afra, T. Bierschenk, R. C. Ewing and M. C. Ridgway, Nano-porosity in GaSb

induced by swift heavy ion irradiation, Applied Physics Letters, 104, 023105 (2014).

[42] T. Koppe, C. Rothfuchs, M. Schulte-Borchers, H. Hofsaess, H. Boudinov and U. Vetter,

Modeling Electrochemical Etching of Proton Irradiated p-GaAs for the Design of MEMS Building

Blocks, Journal of Microelectromechanical Systems, 23, (2014).

[43] M. P. Languer, F. R. Scheffer, A. F. Feil, D. L. Baptista, P. Migowski, G. J. Machado, D. P.

de Moraes, J. Dupont, S. R. Teixeira and D. E. Weibel, Photo-induced reforming of alcohols with

improved hydrogen apparent quantum yield on TiO2 nanotubes loaded with ultra-small Pt

nanoparticles, International Journal of Hydrogen Energy, 38, (2013).

[44] D. D. Leffa, C. E. Iochims dos Santos, R. Debastiani, L. Amaral, M. L. Yoneama, J. F. Dias

and V. M. Andrade, Elemental concentrations in kidney and liver of mice fed with cafeteria or

standard diet determined by particle induced X-ray emission, Nuclear Instruments & Methods

in Physics Research Section B-Beam Interactions with Materials and Atoms, 318, (2014).

[45] G. Leon-Mejia, M. Quintana, R. Debastiani, J. Dias, L. Espitia-Perez, A. Hartmann, J. A.

Pegas Henriques and J. Da Silva, Genetic damage in coal miners evaluated by buccal

micronucleus cytome assay, Ecotoxicology and Environmental Safety, 107, (2014).

[46] S. Limandri, P. de Vera, R. C. Fadanelli, L. C. C. M. Nagamine, A. Mello, R. Garcia-

Molina, M. Behar and I. Abril, Energy deposition of H and He ion beams in hydroxyapatite films:

A study with implications for ion-beam cancer therapy, Physical Review E, 89, (2014).

[47] S. P. Limandri, R. C. Fadanelli, M. Behar, L. Nagamine, J. M. Fernandez-Varea, I. Abril, R.

Garcia-Molina, C. C. Montanari, J. C. Aguiar, D. Mitnik, J. E. Miraglia and N. R. Arista, Stopping

cross sections of TiO2 for H and He ions, European Physical Journal D, 68, 194 (2014).

[48] L. Luza, A. Gual, C. P. Rambor, D. Eberhardt, S. R. Teixeira, F. Bernardi, D. L. Baptista

and J. Dupont, Hydrophobic effects on supported ionic liquid phase Pd nanoparticle

hydrogenation catalysts, Physical Chemistry Chemical Physics, 16, (2014).

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[49] L. G. Matos, R. M. S. dos Reis and R. L. Maltez, Ne-He bubble formation in co-implanted

Si(111) substrates, Thin Solid Films, 548, (2013).

[50] K. Mitsuhara, T. Matsuda, K. Tominaga, P. L. Grande, G. Schiwietz and Y. Kido,

Skimming-trajectory effect for energy loss of medium-energy He ions passing along major

crystal axes of KI(001) and RbI(001), Physical Review A, 87, 042901 (2013).

[51] P. Molz, J. H. Ellwanger, C. E. Iochims dos Santos, J. F. Dias, D. de Campos, V. A.

Corbellini, D. Pra, M. T. Lopes Putzke and S. I. Rech Franke, A metabolomics approach to

evaluate the effects of shiitake mushroom (Lentinula edodes) treatment in undernourished

young rats, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions

with Materials and Atoms, 318, (2014).

[52] S. Nicolodi, L. G. Pereira, A. Harres, G. M. Azevedo, J. E. Schmidt, I. Garcia-Aguilar, N.

M. Souza-Neto, C. Deranlot, F. Petroff and J. Geshev, Negative rotatable anisotropy in

IrMn/Cr/Co thin films, Physical Review B, 85, 224438 (2012).

[53] E. Oliviero, M. L. David, P. F. P. Fichtner, M. F. Beaufort and J. F. Barbot, Lithium

implantation at low temperature in silicon for sharp buried amorphous layer formation and

defect engineering, Journal of Applied Physics, 113, 083515 (2013).

[54] E. Pitthan, S. A. Correa, G. V. Soares, H. I. Boudinov and F. C. Stedile, SiO2/SiC

structures annealed in D-2 O-18: Compositional and electrical effects, Applied Physics Letters,

104, 111904 (2014).

[55] E. Pitthan, S. A. Correa, G. V. Soares, C. Radtke and F. C. Stedile, Synthesis and

applications of O-18 standards for nuclear reaction analysis, Nuclear Instruments & Methods in

Physics Research Section B-Beam Interactions with Materials and Atoms, 332, (2014).

[56] E. Pitthan, L. D. Lopes, R. Palmieri, S. A. Correa, G. V. Soares, H. I. Boudinov and F. C.

Stedile, Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region, Apl

Materials, 1, 022101 (2013).

[57] E. Pitthan, R. Palmieri, S. A. Correa, G. V. Soares, H. I. Boudinov and F. C. Stedile, The

Role Played in the Improvement of the SiO2/SiC Interface by a Thin SiO2 Film Thermally Grown

Prior to Oxide Film Deposition, Ecs Solid State Letters, 2, (2013).

[58] S. Reboh, J. F. Barbot, M. Vallet, M. F. Beaufort, F. Rieutord, F. Mazen, N. Cherkashin,

P. F. P. Fichtner and J. Grilhe, Nanoscale organization by elastic interactions between H and He

platelets in Si, Journal of Applied Physics, 114, 073517 (2013).

[59] M. C. Ridgway, T. Bierschenk, R. Giulian, B. Afra, M. D. Rodriguez, L. L. Araujo, A. P.

Byrne, N. Kirby, O. H. Pakarinen, F. Djurabekova, K. Nordlund, M. Schleberger, O. Osmani, N.

Medvedev, B. Rethfeld and P. Kluth, Tracks and Voids in Amorphous Ge Induced by Swift

Heavy-Ion Irradiation, Physical Review Letters, 110, 245502 (2013).

[60] M. L. F. Rocha, J. F. Dias, L. A. Boufleur, C. E. I. Santos and J. F. Dias, Metal

concentration in muscle of two species of flatfish from Santos Bay, Southeastern Brazilian

coast, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with


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[61] G. K. Rolim, G. V. Soares and C. Radtke, The Role of Sulfur-Passivation in the Stability of

HfO2/Ge Structures, Ecs Solid State Letters, 2, (2013).

[62] D. F. Sanchez, G. Marmitt, C. Marin, D. L. Baptista, G. D. Azevedo, P. L. Grande and P. F.

P. Fichtner, New approach for structural characterization of planar sets of nanoparticles

embedded into a solid matrix, Scientific Reports, 3, 3414 (2013).

[63] D. F. Sanchez, F. Rodrigues, F. P. Luce, Z. E. Fabrim, G. de M. Azevedo, G. Kellermann,

D. L. Baptista, P. L. Grande and P. F. P. Fichtner, MEIS, TEM and GISAXS investigation of buried

Pb nanoislands in SiO2/Si interface, Applied Surface Science, 321, (2014).

[64] G. Schiwietz, M. Beye, K. Czerski, A. Foehlisch, R. Koennecke, M. Roth, J. Schlappa, F.

Staufenbiel, E. Suljoti, I. Kuusik and P. L. Grande, Ultrafast electronic processes in an insulator:

The Be and O sites in BeO, Nuclear Instruments & Methods in Physics Research Section B-Beam

Interactions with Materials and Atoms, 317, (2013).

[65] S. M. Shubeita, R. C. Fadanelli, J. F. Dias and P. L. Grande, Determination of film

thicknesses through the breakup of H-2(+) ions, Surface Science, 608, (2013).

[66] C. G. Silva, M. J. Sampaio, S. A. C. Carabineiro, J. W. L. Oliveira, D. L. Baptista, R. Bacsa,

B. F. Machado, P. Serp, J. L. Figueiredo, A. M. T. Silva and J. L. Faria, Developing highly active

photocatalysts: Gold-loaded ZnO for solar phenol oxidation, Journal of Catalysis, 316, (2014).

[67] D. O. Silva, L. Luza, A. Gual, D. L. Baptista, F. Bernardi, M. J. M. Zapata, J. Morais and J.

Dupont, Straightforward synthesis of bimetallic Co/Pt nanoparticles in ionic liquid: atomic

rearrangement driven by reduction-sulfidation processes and Fischer-Tropsch catalysis,

Nanoscale, 6, (2014).

[68] A. P. Simoes Menezes, J. Da Silva, J. Roloff, J. Reyes, R. Debastiani, J. F. Dias, P. Rohr

and A. d. B. Falcao Ferraz, Baccharis trimera (Less.) DC as Genotoxicity Indicator of Exposure to

Coal and Emissions from a Thermal Power Plant, Archives of Environmental Contamination and

Toxicology, 65, (2013).

[69] G. V. Soares, T. O. Feijo, I. J. R. Baumvol, C. Aguzzoli, C. Krug and C. Radtke, Thermally-

driven H interaction with HfO2 films deposited on Ge(100) and Si(100), Applied Physics Letters,

104, 042901 (2014).

[70] T. P. Soares, C. Aguzzoli, G. V. Soares, C. A. Figueroa and I. J. R. Baumvol,

Physicochemical and mechanical properties of crystalline/amorphous CrN/Si3N4 multilayers,

Surface & Coatings Technology, 237, (2013).

[71] P. A. Sobocinski, P. L. Grande and P. Pureur, Transverse voltage and chiral glass

transition in YBa2Cu3O6+d thin films, Physica C-Superconductivity and Its Applications, 506,

(2014).

[72] C. I. L. Sombrio, P. L. Franzen, R. dos Reis, H. I. Boudinov and D. L. Baptista, Passivation

of defects in ZnO nanowires by SiO2 sputtering deposition, Materials Letters, 134, (2014).

[73] G. Sombrio, P. L. Franzen, R. L. Maltez, L. G. Matos, M. B. Pereira and H. Boudinov,

Photoluminescence from SiNxOy films deposited by reactive sputtering, Journal of Physics D-

Applied Physics, 46, 235106 (2013).

[74] E. M. Stori, M. L. C. F. Rocha, J. F. Dias, C. E. I. dos Santos, C. T. de Souza, L. Amaral and

J. F. Dias, Elemental characterization of injuries in fish liver, Nuclear Instruments & Methods in


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[75] L. Thome, A. Debelle, F. Garrido, S. Mylonas, B. Decamps, C. Bachelet, G. Sattonnay, S.

Moll, S. Pellegrino, S. Miro, P. Trocellier, Y. Serruys, G. Velisa, C. Grygiel, I. Monnet, M.

Toulemonde, P. Simon, J. Jagielski, I. Jozwik-Biala, L. Nowicki, M. Behar, W. J. Weber, Y. Zhang,

M. Backman, K. Nordlund and F. Djurabekova, Radiation effects in nuclear materials: Role of

nuclear and electronic energy losses and their synergy, Nuclear Instruments & Methods in


[76] D. S. Trentin, F. Bonatto, K. R. Zimmer, V. B. Ribeiro, A. L. S. Antunes, A. L. Barth, G. V.

Soares, C. Krug, I. J. R. Baumvol and A. J. Macedo, N-2/H-2 plasma surface modifications of

polystyrene inhibit the adhesion of multidrug resistant bacteria, Surface & Coatings

Technology, 245, (2014).

[77] R. E. Trentin, A. L. Bandeira, F. Cemin, M. Morales, C. L. G. Amorim, C. Aguzzoli, F.

Alvarez, I. J. R. Baumvol, M. C. M. Farias and C. A. Figueroa, Physicochemical, structural,

mechanical, and tribological characteristics of Si3N4-MoS2 thin films deposited by reactive

magnetron sputtering, Surface & Coatings Technology, 254, (2014).

[78] J. Treter, F. Bonatto, C. Krug, G. V. Soares, I. J. Rabin Baumvol and A. J. Macedo,

Washing-resistant surfactant coated surface is able to inhibit pathogenic bacteria adhesion,

Applied Surface Science, 303, (2014).

[79] E. A. Van Etten, E. S. Ximenes, L. T. Tarasconi, I. T. S. Garcia, M. M. C. Forte and H.

Boudinov, Insulating characteristics of polyvinyl alcohol for integrated electronics, Thin Solid

Films, 568, (2014).

[80] M. Vos and P. L. Grande, The relation between the electron energy loss spectra of

hafnia and its dielectric function, Surface Science, 630, (2014).

[81] M. Vos, P. L. Grande, S. K. Nandi, D. K. Venkatachalam and R. G. Elliman, A high-energy

electron scattering study of the electronic structure and elemental composition of O-implanted

Ta films used for the fabrication of memristor devices, Journal of Applied Physics, 114, 073508

(2013).

[82] M. Vos, P. L. Grande, D. K. Venkatachalam, S. K. Nandi and R. G. Elliman, Oxygen Self-

Diffusion in HfO2 Studied by Electron Spectroscopy, Physical Review Letters, 112, 175901

(2014).

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Conference Proceedings

1) E.A. Van Etten, E.S. Ximenes,.L. Tarasconi ; I.T.S. Garcia, M.M.C. Forte, H. Boudinov,.

“Polivinil álcool como dielétrico de porta para eletrônica orgânica” In: Congresso Brasileiro de

Polímeros, 2013, Florianópolis.

2) D. Puglia ; G. Sombrio ; R.M.S dos Reis ; H.Boudinov, . “Photoluminescence from Doped

Silicon Nanocrystals in SiO2 matrix” In: SBMicro2013, 2013, Curitiba.

3) E.A. Van Etten, E.S. Ximenes,.L. Tarasconi ; I.T.S. Garcia, M.M.C. Forte, H. Boudinov,

“Thermal and Electrical Characterization of Polyvinyl Alcohol focusing on Organic Electronics

Applications” . In: SBMicro2013, 2013, Curitiba.

4) G. Sombrio, P. Franzen, R.L. Maltez, H. Boudinov, “ Study of Photoluminescence in SiNx and

SiNxOy Films Deposited by Reactive Sputtering” In: SBMicro2013, 2013, Curitiba.

5) Ion Beam Modification of Materials M, Behar et al 2012 Peking China.

6) Radiation Effects on Insulators, Helsinki 2013 M. Behar et al.

7) J. F. Dias, L. Amaral, M. L. Yoneama, 13th International Conference on Particle Induced X-ray

Emission (PIXE 2013).

8) OLIVEIRA, JOAO W. L. ; CAUDURO, ANDRE L. F. ; Baptista, Daniel L. . Growth of ZnO

nanowires and microbeam lithography for field emission applications. 28th Symposium on

Microelectronics Technology and Devices (SBMicro 2013).

9) P. V. da Paixão, F. C. Stedile, J. G. Cáceres, V. F. Santos, G. G. B. de Souza, “Determination of

trace elements in hair samples using X-Ray Fluorescence (XRF) and Rutherford Backscattering

Spectrometry (RBS) techniques”, Workshop on Spectroscopic Characterization of Biological

Materials Using Ion Beams, Electrons and Synchrotron Radiation, Rio de Janeiro (RJ),

novembro de 2014.

10) J. G. Cáceres, R. C. M Salles, L. J. Ramirez, M. Melo, G. Silva, S. Coutinho, F. C. Stedile, C. V.

Nunes; P. A. M. Souza, G. G. B. de Souza, “Elemental characterization and chemical speciation

of Amazonian plants using X-ray spectroscopies”, Workshop on Spectroscopic Characterization

of Biological Materials Using Ion Beams, Electrons and Synchrotron Radiation, Rio de Janeiro

(RJ), novembro de 2014.

11) E. Pitthan, L. D. Lopes, S. A. Corrêa, R. Palmieri, G. V. Soares, H. I. Boudinov, F. C. Stedile,

“Understanding the Influence of the SiO2/4H-SiC Interfacial Region Thickness in the Electrical

Properties of MOS Structures”, 2014 Materials Research Society - MRS – Spring Meeting, San

Francisco, CA, E.U.A., abril de 2014.

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12) E. Pitthan, S. A. Corrêa, R. Palmieri, G. V. Soares, H. I. Boudinov, F. C. Stedile, “SiO2 films on

4H-SiC: reducing interface electrical degradation due to thermal oxidation”, 8th Brazilian

German Workshop on Applied Surface Science, Bamberg, Alemanha, setembro de 2013.

13)F.C. Stedile, E. Pitthan, R. Palmieri, S.A. Corrêa, G.V. Soares, H. Boudinov “Alternative

Routes to Minimize Electrical Degradation in 4H-SiC MOS Capacitors”, SBMicro 2013 – Chip in

Curitiba: The 28th Symposium on Microelectronics Technology and Devices, setembro de

2013.

14) F. C. Stedile, “Where and why water vapor incorporates in SiO2 films thermally grown on

SiC or Si substrates?”, 3rd Transatlantic Frontiers of Chemistry Symposium, Kloster Seeon,

Alemanha, agosto de 2013, p. 122.

15) F. C. Stedile, E. Pitthan, S. A. Corrêa, C. Radtke, G. V. Soares, “Standards for nuclear

reaction analysis: synthesis and applications”, 21st International Conference on Ion Beam

Analysis – IBA21, Seattle (WA), E.U.A., junho de 2013, p. 111.

16) S. A. Corrêa, E. Pitthan, G. V. Soares, F. C. Stedile , “Ion beam analyses allowing to tracing

the incorporation of water in SiO2/SiC structures”, 21st International Conference on Ion Beam

Analysis – IBA21, Seattle (WA), E.U.A., junho de 2013, p. 85.

17) F.C. Stedile, E. Pitthan, L.D. Lopes, S.A. Corrêa, R. Palmieri, G.V. Soares, H. Boudinov,

“Effects of thermal growth parameters in the kinetics of oxide film growth and in the SiO2/4H-

SiC interfacial region”, European Conference on Silicon Carbide and Related Materials -

ECSCRM-2012, São Petersburgo, Rússia, setembro de 2012, MoP-77.pdf.

18) S.A. Corrêa, C. Radtke, G. V. Soares, J. Han, S. Dimitrijev, F.C. Stedile, “Influence of the Pt

electrode in the incorporation of D in dielectric films on SiC obtained by annealing in O2 and/or

NO”, European Conference on Silicon Carbide and Related Materials - ECSCRM-2012, São

Petersburgo, Rússia, setembro de 2012, We6-5.pdf.

19) S.A. Corrêa, G.V. Soares, J. Han, S. Dimitrijev, F.C. Stedile, “Effects of NO and H2 post-

oxidation annealings on dielectric films thermally grown on SiC”, 2012 Materials Research

Society - MRS – Spring Meeting, San Francisco, CA, E.U.A., abril de 2012, p. 138.

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Books and book chapters

Oral contributions and invited talks

1) Johnny Ferraz Dias, Lívio Amaral, Maria Lúcia Yoneama, The 13th International Conference

on Particle Induced X-ray Emission (PIXE 2013), Editor: Elsevier

ISSN: 0168-583X (2014).

2) Carabineiro, S. A. ; Silva, C. G. ; Sampaio, M. J. ; Baptista, D. L. ; Faria, J. L. ; Figueiredo, J. L. .

Gold nanoparticles on zinc oxide imaged by electron microscopy. Microscopy: advances in

scientific research and education. 1ed.: Formatex Research Center, 2014, v. 2, p. 835-841.

1) Raul Carlos Fadanelli Filho: ESCIM 2012 - VI Encuentro Sudamericano de Colisiones

Inelásticas en la Materia, Rosario, Argentina (nov. 2012). Oral presentation.

2) Raul Carlos Fadanelli Filho: PIXE 2013 - 13th International Conference on Particle Induced X-

ray Emission, Gramado, Brasil (mar. 2013). Oral presentation.

3) Pedro Luis Grande : 7th International Workshop on High Resolution Depth Profiling.Depth

profiling of thin films using Coulomb explosion and electron recoil, Cingapura (jul. 2014).

Invited talk

4) Cláudio Radtke : 2014 Materials Research Society Spring Meeting. Hydrogen incorporation

in GeO2/Ge structures, Sao francisco (abr. 2014). Oral presentation.

5) Fernanda Chiarello Stedile: Alternative Routes to Minimize Electrical Degradation in 4H-SiC

MOS Capacitors - SBMicro 2013 – Chip in Curitiba: The 28th Symposium on Microelectronics

Technology and Devices, PR, September 2013. Oral presentation.

6) Fernanda Chiarello Stedile : Where and why water vapor incorporates in SiO2 films

thermally grown on SiC or Si substrates?, 3rd Transatlantic Frontiers of Chemistry Symposium,

Kloster Seeon, Germany, August 2013. Invited talk.

7)Lucas Tarasconi “Polivinil álcool como dielétrico de porta para eletrônica orgânica” In:

Congresso Brasileiro de Polímeros, 2013, Florianópolis. Oral Presentation.

8) Denise. Puglia “Photoluminescence from Doped Silicon Nanocrystals in SiO2 matrix” In:

SBMicro2013, 2013, Curitiba. Oral Presentation.

9) Eder Ximenes “Thermal and Electrical Characterization of Polyvinyl Alcohol focusing on

Organic Electronics Applications” . In: SBMicro2013, 2013, Curitiba. Oral Presentation.

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10) Guilherme Sombrio “ Study of Photoluminescence in SiNx and SiNxOy Films Deposited by

Reactive Sputtering” In: SBMicro2013, 2013, Curitiba. Oral Presentation.

11) Ion Beam Modification of Materials M, Behar et al 2012 Peking China.

12) Radiation Effects on Insulators, Helsinki 2013 M. Behar et al.

13) Materials Research Society. Spring Meeting. Symposium FF: Compound Semiconductors for

Generating, Emitting, and Manipulating Energy – II”, April 2013, San Francisco, USA,

“Heteroepitaxy of GaN/AlN on Si(111) Substrate”, by Zuzanna Liliental-Weber, Rogerio L.

Maltez, Roberto M. dos Reis, J. Xie, V. Avrutin, H. Morkoc.

14) Johnny Ferraz Dias: XVIII Congresso Brasileiro de Toxicologia. Título: PIXE measurements of

coal: an overview. Porto Alegre, 2013. Invited Talk.

15) Johnny Ferraz Dias: International Workshop on Remediation for Fukushima Nuclear

Disaster. Título: Radioactivity in Brazilian Beach Sands. Sendai, Japão, 2013. Invited Talk.

16) Leandro Langie Araujo: ESCIM 2012 - VI Encuentro Sudamericano de Colisiones Inelásticas

en la Materia, Rosario, Argentina (nov. 2012). Oral presentation.

17) Gabriel Vieira Soares 8th Brazilian/German Workshop in Applied Surface Science, Bamberg

Alemanha (2013). Invited Talk

18) Gabriel Vieira Soares, 222nd Electrochemical Society Meeting, Honolulu, EUA. (2012). Oral

Presentation.

19) Oral presentation at REI, Helsinki 2013

20) Raul Carlos Fadanelli Filho: XXXVI Encontro Nacional de Física da Matéria Condensada,

Águas de Lindóia, Brasil (maio 2013). Invited talk.

21) Raul Carlos Fadanelli Filho: ESCIM 2014 - VII Encontro Sul-Americano de Colisões Inelásticas

na Matéria, Gramado, Brasil (out. 2014). Oral presentation.

22) Johnny Ferraz Dias: ESCIM 2014 - VII Encontro Sul-Americano de Colisões Inelásticas na

Matéria, Gramado, Brasil (out. 2014). Invited Talk. Título: Toxicology and Biomonitoring

Studies with PIXE.

23) Johnny Ferraz Dias: 8th Simposyum on BioPIXE, Bled, Eslovênia (2014). Título: Toxicology

and Biomonitoring Studies with PIXE. Invited Talk.

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24) Silma Alberton Corrêa: Ion beam analyses allowing to tracing the incorporation of water in

SiO2/SiC structures, 21st International Conference on Ion Beam Analysis, Jun/2013, Seattle,

USA. Oral Presentation.

25) Eduardo Pitthan:SiO2 films on 4H-SiC: reducing interface electrical degradation due to

thermal oxidation, 8th Brazilian-German Workshop on Applied Surface Science, Sep/2013,

Bamberg, Germany. Oral Presentation.

26) Eduardo Pitthan: Understanding the Influence of the SiO2/SiC Interfacial Region Thickness

in the Electrical Properties of MOS Structures, 2014 MRS Spring Meeting, Apr/2014, San

Francisco, USA. Oral Presentation.

27) Daniel Lorscheitter Baptista: 21st International Conference on Ion Beam Analysis, Seattle,

EUA. (2013). Oral Presentation.

28) Daniel Lorscheitter Baptista: XXXVI Encontro Nacional de Física da Matéria Condensada,

Águas de Lindóia, Brazil. (2013). Oral Presentation.

29) Daniel Lorscheitter Baptista: VIII Congresso de Microscopia dos Materiais, Campinas, Brazil.

(2014). Invited Talk.

30) Pedro Luis Grande, 26th International Conference on Atomic Collisions in Solid (26th ICACS)

, Debrecen, Hungary (2014). Invited talk.

31) Pedro Luis Grande, 19th International Conference on Ion Beam Modification of Materials

(19th IBMM), Leuven, Belgium (2014). Invited talk

32) Pedro Luis Grande, XII Workshop em Física Molecular e Espectroscopia, Brasília, Brazil

(2014). Invited talk.

33) Eduardo Pitthan: Interaction of D218O vapor with SiO2/SiC structures, Institute for

Advanced Materials, Devices and Nanotechnology, Apr/2014, New Brunswick, USA. Seminar.

34) Paulo F. P. Fichtner: Thermal stability and structural characterization of nanocluster and

nanoparticle systems embedded in dielectric substrates; MSE!2014 -

MATERIALS!SCIENCE!ENGINEERING, 23–25 Sept 2014 Darmstadt, Germany.

35) Paulo F. P. Fichtner: Stability of nanocluster and nanoparticle systems embedded in

dielectric substrates, International Workshop on Advanced and In-situ Microscopies of

Functional Nanomaterials and Devices, PUCRio, 6-8 July 2014.

36) R. M. Papaléo, Efeitos da radiação iônica sob confinamento espacial em uma dimensão.

ESCIM 2014 - VII Encontro Sul-Americano de Colisões Inelásticas na Matéria, Gramado, Brasil

(out. 2014). Invited Talk

37) R. M. Papaléo, Confinement effects of ion tracks in in ultrathin polymer films. 17th Int.

conference on Radiation Effects in Insulators. Helsinki, Finlandia, september 2013. Invited talk

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38) R. M. Papaléo: Confining Ion Tracks in 2D organic materials: the case of ultrathin polymer

layers. 2014 Spring conference of the European Materials Research Society, Lille, França, Maio

2014. Invited Talk

39) R. Giulian: Structural, electrical and optical properties of InSb and AlSb modified by ion

irradiation. 19th International Conference on Ion Beam Modification of Materials (19th IBMM),

Leuven, Belgium (2014). Oral presentation

Supervision of thesis and dissertations

(completed)1) Dario Ferreira Sanchez, "Caracterização do arranjo estrutural de sistemas enterrados de

nanopartículas pela técnica de MEIS". 21/12/2012, Thesis, Supervisors Paulo Fernando Papaléo

Fitchner and Pedro Luis Grande

2) Maurício de Albuquerque Sortica, "Caracterização estrutural de nanocristais compostos via

espelhamento de íons de alta resolução", 20/05/2013 - Thesis, Supervisors : Pedro Luis Grande

and Claudio Radtke

3) Roberto Moreno Souza dos Reis, "Estudo de Camadas Superficiais de SiC e GaAsN

Sintetizadas por Implantação iônica em Si e GaAs", 09/09/2013 - Thesis, Supervisors : Henry

Boudinov and Rogério Maltez

3) Gabriel Guterres Marmitt, “Efeitos de Espalhamentos Múltiplos na Análise de Materiais

Nanoestruturados via MEIS”, 22/10/2013. -Dissertation, Supervisors : Pedro Luis Grande and

Agenor Hentz

4) Silma Alberton Corrêa, "Efeitos da interação de vapor d’água, de nitrogênio e de hidrogênio

com estruturas dielétrico/SiC", July 2013, Thesis, Supervisor: Fernanda Chiarello Stedile.

5) Eduardo Pitthan Filho,"Filmes de SiO2 depositados e crescidos termicamente sobre SiC:

Caracterização Físico-Química e Elétrica", March 2013, Dissertation, Supervisor: Fernanda

Chiarello Stedile

6) Matheus Adam. "Nitreto de silício depositado por sputtering reativo para aplicação em

memória não-volátil", September 2013, Dissertation, Supervisor: Henri Ivanov Boudinov.

7) Eder Sandim Ximenes. "Álcool Polivinílico (PVA) Como Dielétrico de Porta em Eletrônica

Orgânica", June 2014, Dissertation, Supervisor: Henri Ivanov Boudinov.

8) Rafaela Debastiani. Análise Elementar das Etapas de Preparo do Café Brasileiro. 2012.

Dissertação (Mestrado em Física) - Universidade Federal do Rio Grande do Sul, Conselho

Nacional de Desenvolvimento Científico e Tecnológico. Orientador: Johnny Ferraz Dias.

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9) Cláudia Telles de Souza. Micro-estrutura;'ao de membranas de poli(tereftalato de etileno)

por microfeixe de íons. 2013. Tese (Doutorado em Ciências dos Materiais) - Universidade

Federal do Rio Grande do Sul, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior.

Orientador: Johnny Ferraz Dias e Ricardo M. Papaléo.

10) Lauren Aranha Galves, "Estudo da dinâmica de transição de fases em ligas de Ge2Sb2Te5",

27/03/2014 - Dissertation, Supervisors : Luis Gustavo Pereira and Leandro Langie Araujo

11) IVAN RODRIGO KAUFMANN "Estabilização de filmes finos de óxido de germânio por

incorporação de nitrogênio visando aplicações em nanoeletrônica" 15/08/2013.

Dissertation.Orientador: Gabriel Vieira Soares

12)Elis Moura Stori. ESTUDO E APERFEIÇOAMENTO DA TÉCNICA MICROSCOPIA IÔNICA DE

VARREDURA POR TRANSMISSÃO PARA APLICAÇÃO EM AMOSTRAS MICROESTRUTURADAS POR

FEIXE DE PRÓTONS. PhD thesis. Supervisor: Johnny Ferraz Dias

13)Aline Tais da Rosa,"Investigação da interface entre filmes dielétricos crescidos

termicamente e o carbeto de silício monocristalino com potencial uso em microeletrônica",

March 2012, Dissertation, Supervisor: Fernanda Chiarello Stedile

14) Bárbara Canto, PhD Thesis (2014). "Fabricação de dispositivos com contato túnel para

spintrônica em grafeno", Supervisor: Daniel Lorscheitter Baptista and João Edgar Schmidt.

15) Deise Schafer, PhD Thesis (2014). "Estudo das modificações induzidas pela irradiação de

íons em sistemas com acoplamento interfacial ferro-antiferromagnético", Supervisor: Julian

Geshev and Pedro Luis Grande.

16) Daniela G. Sotelo, Dissertation (2014). "Produção de microfeixes de íons de MeV com o uso

de microcapilares de vidro". Supervisor: Ricardo M. Papaléo

17) Thiago Dias, PhD Thesis (2014). “Exchange Bias em Sistemas com Óxidos de Metais de

Transição: Modificações via Implantação Iônica e Efeito de Treinamento”, Supervisor: Julian

Gheshev and Raquel Giulian

1) Depósito de pedido ao INPI - Instituto Nacional da Propriedade Industrial. Número do

registro: BR 10 2012 026044 1. Depositante: UFRGS. Título da Invenção: Processo de Síntese de

Padrões de 18O com Barreira Passivadora em um Substrato. Inventores: E. Pitthan, S.A. Corrêa,

C. Radtke, G.V. Soares, F.C. Stedile. 2012

Patent

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Organization of conferences

1) The 13th International Conference on Particle Induced X-ray Emission (PIXE 2013), Gramado,

Brazil (2013). Chairs Johnny Ferraz Dias, Lívio Amaral and Maria Lúcia Yoneama.

2) VII Encontro Sul Americano de Colisões Inelásticas na Matéria (VII ESCIM), Gramado, Brazil

(2014). Chairmen Pedro Luis Grande and Moni Behar

Members in international committees and in

editorial boards of scientific journals

• Fernanda C. Stedile - Member of the international committee of the

International Conference on Ion Beam Analysis (IBA)

• Pedro L. Grande - Member of the international committee of the

International Conference on Ion Beam Analysis (IBA)


International Conference of Atomic Collision in Solids (ICACS)


International Workshop on High-Resolution Depth Profiling (HRDP)

• Pedro L. Grande - Member of the International Committee of Colisiones

Inelasticas na Materia

• Pedro L. Grande - Editorial Board Nucl. Instr. and Methods B

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• Fernanda C. Stedile - Editorial Board Nucl. Instrum. and Methods B

• Johnny Ferraz Dias - Member of the International Committee of the

International Conference on Particle-Induced X-ray Emission

• Johnny Ferraz Dias - Member of the International Committee of the

International Symposium on BioPIXE

• Moni Behar - Member of the International Committee of the Radiation

Effects in Insulators.

• Moni Behar - Member of the International Comittee of Ion Beam

Modification of the Materials

• Moni Behar - Member of International Committee of Radiation Effects on

the Materials.

• Moni Behar - Member of the International Committee of Colisiones

Inelasticas na Materia.

- Moni Behar, Member of the International Committe of Radiation rffrcts on

the matter

• Ricardo Papaléo - Member of the International Committee International

Symposium

on Swift Heavy Ions in Matter

• Gustavo Azevedo - Member of the Executive Committee of the IXAS

(International XAFS Society)

• Paulo F. P. Fichtner - Member of the International Comittee of the Ion Beam

Modification of Materials Conference.

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Partners (Universities, Research Institutes

and Companies)

CAPES/MES, Cuba 2010/2012

CAPES/MES, Cuba 2012/2014

CAPES/COFECUB, França 2012/2014

Capes/Myncyt, Argentina, 2010-2012

CAPES/FCT, Portugal, 2014/2015

École Polytechnique de Nancy, CAPES – Brafitec. Dupla diplomação em

nível de graduação e pós-graduação em engenharia e ciência dos materiais.

Pontifícia Universidade Católica - RJ, INCT e PROCAD.

UFSC and UFPR. Área de corrosão eletroquímica de aços revestidos e/ou

tratados termicamente.

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Projects

PRONEX

INCT-INES

Nanobiotec

INCT-Namitec

PNPD-CAPES

R-NANO, PETROBRAS

CNPq

PqG-FAPERGS

IAEA

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Laboratório de Implantação IônicaInstituto de FísicaUniversidade Federal do Rio Grande do Sul

Av. Bento Gonçalves 950091501-970, Porto Alegre – RS, BrasilPhone +55 51 33087004 Fax +55 51 33087296http://implantador.if.ufrgs.br

biennial report 2014 - instituto de física da ufrgsgrande/arep2014.pdf · biennial report - 2014...

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