chuong_diode.pdf
TRANSCRIPT
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1Chng 1: Diode bn dn
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2Ni dungGii thiu Vt liu bn dn Diode bn dn thng thng Chnh lu Phn tch mch diodeMch xn (clippers) v mch ghim in p
(Clampers) Diode zener Cc loi diode khc nh hng ca nhit v cc thng s k
thut
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3K hiu
Gi tr ti im tnh Q (quiescent-point):IEQ, VCEQGi tr mt chiu: IE, VCEGi tr tc thi: iE, vCEGi tr tc thi ca thnh phn thay i
theo thi gian: ie, vce
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4K hiu
iE = IE + ie
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5Gii thiu
Diode l mt linh kin in t phi tuynn gin nht.Cc loi diode: diode chn khng, diode
kh, diode chnh lu kim loi, diode bndn, v.v.Diode bn dn:Cu to v tnh chtPhng php phn tch mchng dng
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6Vt liu bn dn
Cc loi vt liu bn dn thng dng:Silicon (Si)Germanium (Ge)Gallium Arsenide (GaAs)
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7Cu trc nguyn t
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8Cu trc tinh th
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9Vt liu bn dn Cc mc nng lng
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10
S dn in trong cht bn dn
Dng khuch tn (diffusion current): Khi c sthay i mt electron (hole)
Dng chy (drift current): Khi c in trngngoi
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11
Bn dn loi p
Doping: L qu trnh a vo cht bndn cc cht khc cn thit.
Bn dn loi pCht a vo: cht nhn (acceptor material). V
d: Boron (III)Cu trc tinh th v s mc nng lng
(xem trang sau)Phn t mng in ch yu: L trng (positive):
p-type material
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12
Cu trc tinh th v s mc nng lng
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13
Bn dn loi n
Cht a vo: cht cho (donor material).V d: Phosphorus (V).
Cu trc tinh th v s mc nnglng (xem trang sau).
Phn t mang in ch yu: Electron(negative) n-type material
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14
Cu trc tinh th v s mc nng lng
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15
Diode bn dn thng thng
Cu trc v k hiu
Lp tip xc pn (pn junction)
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16
S phn cc ca diode
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17
Quan h gia dng in v in p cadiode
Diode l tng
vi > 0: iD > 0 v vD = 0 (Diode ngn mch: shortcircuit)vi < 0: vD < 0 v iD = 0 (Diode h mch: opencircuit)
viri
vD
iD+
_
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18
c tuyn Volt Ampere (VA) ca Diode
I0: Dng phn cc nghchbo ho (reversesaturation current), A
q = 1,6E-19 C k = 1,38E-23 J/ 0K: Hng
s Boltzmann T: Nhit tuyt i, 0Km: 1 m 2: Hng s thc
nghim 25 mV, ti nhit
phng (27 0C)
)1()1( TDD
mVv
omkTqv
oD eIeIi
Phn cc thun (vD>0): Khi :
Phn cc nghch (vD< 0): Khi :
TD mVv T
DmVv
oD eIi TD mVv
oD Ii
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19
Diode thc t v Xp x tuyn tnh ho tngon (piecewise-linear approximation)
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20
Phng php phn tch mch diode
i vi mch tn hiu ln Xem nh diode l tng
i vi mch tn hiu b Xem diode nh mt in tr ng
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21
Chnh lu
Chnh lu l qu trnh chuyn i tn hiu xoaychiu (ac) thnh tn hiu mt chiu (dc)Lu : Cc v d trong phn ny s dng ctuyn diode l tng.
Chnh lu bn sng (Half-wave rectification)
vi = Vimcos(ot)
ri vD iD
vLRL
+
_
_+
Ideal diode
Nguon (Source) Tai (Load)
1
9
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22
Chnh lu bn k (bn sng)
nh lut Kirchhoff v in p (KVL):
vi > 0: vD = 0 (Diode ngn mch), ,
vi < 0: Diode h mch: ,
Li
DiD Rr
vvi
Li
iD Rr
vi
Li
LiDLL Rr
RviRv 0Di 0 DLL iRv
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23
in p trn ti vL(chnh lu bn k)
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24
Phn tch tn hiu chnh lu bn sng
Gi tr trung bnhKhai trin Fourier
Lc (filter) tn hiu chnh lu bn k:Mch lc dng lc b cc hi xoay chiu
(harmonics) nhm gi li thnh phn mt chiuca tn hiu vL(t): Lc thng thp (lowpass filter LPF)
Lm
TLdcL
VdttvT
V )(1,
...4cos15
22cos32
cos211)( tttVtv oooLmL
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25
Lc tn hiu chnh lu bn sng Cc mch lc thng thp c bn
Gi s dng mch lc (a) vi RC = 100/0 v R >> RL.Bin in p ng ra ca mch lc ti tn s n0 (n1)l:
vi VLn l bin in p ng vo ca mch lc ti tns n0.
R R R
C
L L
C C C
(a) (b) (c)
nV
RCnVV Ln
o
Lnon 1001 2
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26
Lc tn hiu chnh lu bn sng
S dng nguyn l chng chp in p ng ra,
gn sng (Ripple factor): Thnh phn DC: Thnh phn gn sng:Gi tr hiu dng (rms) ca thnh phn gn
sng:
gn sng
...4sin3000
12sin300
1sin
20011)( tttVtv oooLmo
Lm
dcLVV
,
...2sin300
1sin
2001
ttVv ooLmr
280
...
)300(1
)200(1
2)(1)( 22
2/12 LmLm
Trrmsr
VVdttvT
v
011.0280
)(,
dcL
rmsr
Vv
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27
Chnh lu ton sng (Full waverectification)
Hot ng v in p ra trn ti vL (chnh lu ton sng)
- +
1
2
3
4
1
4
5
6
8
Ri
1
Ri
1
9
D1
D2
vi viRLRLvL
+
_vL
+
_D1
D2D3
D4
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28
Phn tch tn hiu chnh lu ton sng
Gi tr trung bnh: Khai trin Fourier:
Lc tn hiu chnh lu ton sngGi s dng mch lc nh phn chnh lu bn
sng, in p ng ra:
Gi tr hiu dng ca thnh phn gn sng:
gn sng
Lm
dcLVV 2
,
...4cos15
42cos342)( ttVtv ooLmL
...4sin1500
12sin300
22)( ttVtv ooLmo
210)(Lm
rmsr
Vv
0024.04201
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29
Mch lc (Filtering)
Hot ng T C c np nhanh n gi tr Vmax ca in p v0(t). Khi v0(t) gim, t C phng in qua RL vi quy lut:
Qu trnh tun hon vi tn s chnh lu fp:fp = 2f0 : Chnh lu ton sngfp = f0 : Chnh lu bn sng
vi f0: tn s ca ngun vi.
1
4
5
6
8
D1
D2
C RLvi vo
+
_
CRt
oLeVtv
max)(
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30
Phn tch v tnh ton mch lc
Xp x tn hiu ng ra bng dng sngrng ca (sawtooth wave)T C:
in p gn sng hiu dng:
Chng minh: xem TLTK[1] v [2]
LpRVfVC
max
32)( minmax VVv rmsr
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31
Mch nhn i in p (Voltage doublingcircuit)
Bn k m ca vS: C1 np in qua D1 n inp VSmax
Bn k dng ca vS: in p chng chp caC1 v vS np in cho C2 qua D2 n in p2VSmax
1 5
4 8
C1
C2D1
D2Mch nhni in pmt bn chuk
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32
Mch nhn i in p (cont)
Bn k dng ca vS: C2 np in qua D1 n in pVSmaxTng in p vS v VSmax trn C1 (c np t bnktrc) t ln ti RL thng qua D1
Bn k m ca vS: C1 np in qua D2 n in pVSmaxTng in p vS v VSmax trn C2 (c np t bn ktrc) t ln ti RL thng qua D2
Mch nhni in phai bn chuk
D1 D2
C1C2
1 5
4 8
RL
+ +vS
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33
Nhn tn s (Frequency Multiplication)
Mch chnh lu to ra tn hiu (hi harmonics) ti cc tn s: n0.
S dng mch lc thch hp ly ccthnh phn hi cn thit.
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34
Phn tch mch diode
Lu : Cc v d trong phn ny s dng ctuyn Diode thc
Mch Diode n gin ng ti mt chiu(DC Load Line)
vi
rivD
RL vL vT
RT vD
iD iD+++
_ _
_Diode hoccc phnt phituyn
Mch tng ngThevenin ca phn tuyntnh
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35
Phng php phn tch mch diode
Phng php thPhn t phi tuyn c th hin bng c tuyn VA:Phn cn li (tuyn tnh) c thay th bng mch
tng ng Thevenin: hay:(DCLL)
Tm hiu hot ng (im tnh Q quiescentpoint)
)( DD vfi
TDTD Rivv T
TD
TD R
vv
Ri 1
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36
Phng php phn tch mch (cont)
in p tng ng Thevenin vT thay i (Vd: vT = VTmsint)
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37
Phn tch tn hiu nh - in tr ng Tn hiu nh
Thnh phn thay i (ac) ca tn hiu l rt nh so vithnh phn dc.
vi Vim
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38
Phn tch tn hiu nh Chuyn trc to v Q: ,
Tn hiu nh: xem ab l on thng i qua Q vc phng trnh:
in tr ng (dynamic resistance):
DQDd Iii DQDd Vvv
d
dd
r
vi
QDD
d iv
r
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39
Tnh gi tr in tr ng T phng trnh: , gi tr in tr ng:
vi: IDQ: Dng in tnh im qua Diode Mch tng ng
Mch (a): Tm im tnh Q (IDQ v VDQ), s dng phng php th
Mch (b): Tm p ng tn hiu nh (id v vd), s dng in trng v cc nh lut Kirchhoff
Dng nguyn l xp chng tm tng p ng
T
DmVv
oD eIi
DQDQT
QDD
QDD
d ImVm
ImV
iv
iv
r)(25
(a) (b)
Vdc
RT RTrd
vi
VDQ
IDQ
+ _
id
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40
Mch in c thnh phn in khng Reactive elements (L,C) V d:
Gi s: 1/C
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ng ti xoay chiu ACLL Xt v d trn
gi s: 1/C
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42
Phn tch th
Phn tch tn hiu ln - s mo dng v dch chuynim tnh (xem TLTK[1])
Phn tch tuyn tnh ho tng on v mch tngng (xem TLTK[1])
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43
Mch xn v mch ghim in pMch xn dng loi b in p nm di hay
trn mt mc chun (reference level)V d 1: (gi s diode l tng)
V d 2: (gi s diode l tng)
R
vi vo
VB
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44
Mch xn v mch ghim in p (cont) V d 3: (gi s diode l tng)
Mch ghim in p (Clampers)Mch ghim in p thc hin vic di chuyn tn hiu(shifting operation) theo trc Y vi dch chuyn phthuc vo dng sng ng vo sao cho tn hiu ng ra lunc ghim (clamped) ti mt gi tr c nhV d: Gi s Diode l tng, RC >> T v Vm > VB
Rvi vo
VB
C
VC = Vm -VB
R
vi voVB1 VB2
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45
Diode Zener Diode Zener: Hot ng ch yu trong vng phn cc
nghch K hiu v c tuyn VAPhn cc thun: nh Diode thng thngPhn cc nghch: , vZ = VZ = constantminmax ZZZ IiI
VZ: in p Zener IZmax: Dng phn cc nghch
ti a ca Diode Zener IZmin: Dng phn cc nghch
ti thiu vZ = VZ, thngIZmin = 0.1IZmax
PZmax = VZ IZmax: Cng sutti a tiu tn trn DiodeZener
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46
Mch n p dng diode Zener
Mc ch: Thit k mch sao cho Diode Zener hot ngtrong vng n p (vng gy breakdown region): IZmax iZ IZmin , vZ = VZ
Phn tch:
IZmax iZ IZmin vi mi gi tr ca vS v iL: min(iZ) IZmin v max(iZ) IZmaxv
vS
Ri
RL
iL
iZ
iR
VZ+
_
vS v iL: khng n nh
LZ
ZS
R
ZSi ii
Vvi
VvR L
i
ZSZ iR
Vvi
minmaxmin)min( ZL
i
ZSZ IIR
VVi maxmin
max)max( ZLi
ZSZ IIR
VVi
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47
Mch n p dng diode Zener (cont)
Vi yu cu v ngun (vS) v ti (iL) cho trc, chnc Ri cn phi c
, thng chn IZmin = 0.1 IZmax
Chn Diode Zener :v: v:Thit k: Lm theo th t ngc li xc nh IZmaxca Diode Zener v Ri
maxmin
max
minmax
min
ZL
ZSi
ZL
ZSII
VVRIIVV
maxmin
max
minmax
min
ZL
ZS
ZL
ZSII
VVIIVV
maxmin
minminmaxmaxmax 1.09.0
)()(SZS
ZSLZSLZ VVV
VVIVVII
maxmax LZ II minmaxminmaxmin 101.0 LZLZZ IIIII
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48
Thit k mch diode Zener v d 1 Thit k mch n p dng Diode Zener: VZ = 10 V vS : 14 20 V v iL: 100 200 mA
v vChn IZmax = 0.533A Ri = 15.8 Cn xt n cng sut tiu tn cc i trn Ri v DiodeZener:Trn Ri: PRimax = (VSmax VZ)2 / Ri = 6.33 WTrn Diode Zener: PDiode = IzmaxVZ = 5.33 W
vS : 10.2 14 V v iL: 20 200 mA
Khng thit k c !!!
AVVV
VVIVVIISZS
ZSLZSLZ 533.01.09.0
)()(maxmin
minminmaxmaxmax
AII LZ 2.0maxmax AII LZ 110 minmax
AVVV
VVIVVIISZS
ZSLZSLZ 41.09.0
)()(maxmin
minminmaxmaxmax
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49
Thit k mch diode Zener V d 2
VZ = 7.2 V; vS = Vdc = 12 V; iL: 12 100 mA; TmRiVSmax = VSmin = Vdc = 12V
v v
Chn IZmax = 100 mA 43.5 Ri 40: Chn Ri = 43.5Cng sut tiu tn cc i:Trn Ri: PRimax = (Vdc VZ)2/ Ri = 0.53WTrn Diode Zener: PDiode = IzmaxVZ = 0.72 W
mAVVV
VVIVVIISZS
ZSLZSLZ 8.971.09.0
)()(maxmin
minminmaxmaxmax
mAII LZ 100maxmax mAII LZ 12010 minmax
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50
Diode Zener thc t
Diode Zener thc t (xem TLTK[1])c tuyn VA
Dng phng php th phn tch mch
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51
thay i in p (percent regulation) V d: xt v d 1a) trong phn trc. Gi s Izmin=
0.1IZmax = 0.053ADiode Zener thc t c gi tr in tr ng: rd = 2Mch tng ng:
in p ra: Vomax = 10 + 0.532 = 11.1VVomin = 10 + 0.0532 = 10.1V
thay i in p:%Reg = (Vomax Vomin) / V0 danh nh (nominal)%Reg = (11.1 10.1) / 10 = 10%
Ri
rd
iL
vo
+
_
VZiZ
DiodeZener ltng
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52
Cc loi diode khc
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53
nh hng ca nhit nh hng ln c tuyn VA
in p ngng V (turn-on voltage)
k = 2.5 mV/ oC Dng phn cc ngc I0
K = 0.07 / 0C Quan h gia cng sut v nhit Diode nh lut Ohm
21: in tr nhit (thermal resistance) gia 2 v 1 (0C / W)P: Cng sut tiu tn (power dissipation) ti 2 (W)
)()()( 11 oo TTkTVTVV
)(12
12)()( TTKoo eTITI
PTT 2112
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54
nh hng ca nhit (cont)
ng suy gim cng sut (Derating Curve)
TcPj
Tj
Ta
jc
ca
Tj Tjmax: Cho trc bi nh sn xutjc: Hng s, cho trc bi nh sn xutca: C th thay i c, s dng tn nhit (heat sink), nu gim ca
Gim Tj vi cng cng sut Pj (Ta = constant)
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Thng s k thut
Diode thng thngin p ngc cc i (PIV Peak Inverse
Voltage)Dng phn cc ngc cc i ti PIVin p phn cc thun cc iGi tr trung bnh ca chnh lu bn sngNhit cc i ti tip gip pn Tjmaxng suy gim cng sut
Diode Zener (xem TLTK[1])