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March 2006

FDD8780/F

DU8780N-ChannelPow

erTrench

MOSFET

2006 Fairchild Semiconductor CorporationFDD8780/FDU8780 Rev. B

www.fairchildsemi.com1

FDD8780/FDU8780

N-Channel PowerTrenchMOSFET25V, 35A, 8.5m

General Description

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

rDS(on) and fast switching speed.

Application

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

Features

Max rDS(on)= 8.5m at VGS = 10V, ID = 35A

Max rDS(on)= 12.0m at VGS = 4.5V, ID = 35A

Low gate charge: Qg(10) = 21nC(Typ), VGS = 10V

Low gate resistance

Avalanche rated and 100% tested

RoHS Compliant

MOSFET Maximum Ratings TC = 25C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

VDS Drain to Source Voltage 25 V

VGS Gate to Source Voltage 20 V

ID

Drain Current -Continuous (Package Limited) 35

A-Continuous (Die Limited) 60

-Pulsed (Note 1) 224

EAS Single Pulse Avalanche Energy (Note 2) 73 mJ

PD Power Dissipation 50 W

TJ, TSTG Operating and Storage Temperature -55 to 175 C

RJC Thermal Resistance, Junction to Case TO-252,TO-251 3.0 C/WRJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 C/W

RJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDD8780 FDD8780 TO-252AA 13 12mm 2500 units

FDU8780 FDU8780 TO-251AA N/A(Tube) N/A 75 units

FDU8780 FDU8780_F071 TO-251AA N/A(Tube) N/A 75 units

L

EA

DFREE

M

TA

E

L

N

TIO

MP

E

N

I

D

G

S

Short Lead I-PAKI-PAK

(TO-251AA)

G D S

G

DS

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Typical Characteristics TJ = 25C unless otherwise noted

Figure 1. On Region Characteristics

0 1 2 3 40

10

20

30

40

50

60

70

PULSE DURATION = 80sDUTY CYCLE = 0.5%MAX

VGS = 3V

VGS = 3.5V

VGS = 4.5V

VGS = 10V

ID,

DRAINCURRENT

(A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 2. Normalized

0 10 20 30 40 50 60 700

1

2

3

4

5

6

7


NORMALIZED

DRAINTOSOURCEON-RE

SISTANCE

ID, DRAIN CURRENT(A)

VGS = 10V

VGS = 4.5V

VGS = 3.5V

VGS = 3V

On-Resistance vs DrainCurrent and Gate Voltage

Figure 3.

-80 -40 0 40 80 120 160 2000.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 35A

VGS = 10V

NORMALIZED

DRAINTOSOURCEON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

Normalized On Resistance vs JunctionTemperature

Figure 4.

3.0 4.5 6.0 7.5 9.00

10

20

30

40


TJ = 175oC

TJ = 25oC

ID = 35A

rDS(on),ON-RESISTANCE(m

)

VGS, GATE TO SOURCE VOLTAGE (V)

10

On-Resistance vs Gate to SourceVoltage

Figure 5. Transfer Characteristics

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.50

10

20

30

40

50

60

70


TJ = -55oC

TJ = 25oC

TJ = 175oC

ID,DRAINCURRENT(A)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.41E-3

0.01

0.1

1

10

100

TJ = -55oC

TJ = 25oC

TJ = 175oC

VGS= 0V

IS,

REVERSEDRAINCURRENT(A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

200

Source to Drain Diode ForwardVoltage vs Source Current

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Figure 7.

0 5 10 15 20 250

2

4

6

8

10

VDD = 13VVDD = 16V

VDD= 10V

VGS,

GATETOSOURCEVOLTAGE(V)

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

0.1 1 10100

1000

f = 1MHz

VGS = 0V

CAPACITANCE(pF)


Crss Coss

Ciss

4000

30

Capacitance vs Drain to Source Voltage

Figure 9.

0.01 0.1 1 10 1001

10

TJ = 25oC

TJ = 125oC

TJ = 150oC

tAV, TIME IN AVALANCHE(ms)

IAS,

AVALANCHECURRENT(A)

300

50

Unclamped Inductive SwitchingCapability

Figure 10.

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

ID,

DRAINCURRENT(A)

TA, AMBIENT TEMPERATURE(oC)

RJC = 3.0oC/W

VGS= 4.5V

VGS= 10V

Maximum Continuous Drain Current vsCase Temperature

Figure 11.

1 100.1

1

10

100

500

100us

1ms

10ms

10us

ID,D

RAINCURRENT(A)


SINGLE PULSE

TJ = MAX RATED

TC=25oC

OPERATION IN THISAREA MAY BE

LIMITED BY rDS(on)

DC

50

LIMITED BY

PACKAGE

Forward Bias Safe Operating Area Figure 12. Single

10-5

10-4

10-3

10-2

10-1

100

101

100

1000

30

SINGLE PULSE

VGS

= 10V

P(PK),

PEAKTRANSIENTPOWER(W)

t, PULSE WIDTH(s)

7000

TC = 25oC

I = I25

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

175 TC

150-----------------------

Pulse Maximum PowerDissipation


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Figure 13. Transient Thermal Response Curve

10-5

10-4

10-3

10-2

10-1

100

101

1E-3

0.01

0.1

1DUTY CYCLE-DESCENDING ORDER

NORMALIZEDTHERM

AL

IMPEDANCE,

ZJC

t, RECTANGULAR PULSE DURATION(s)

D = 0.5

0.20.1

0.05

0.02

0.01

SINGLE PULSE

2

PDM

t1

t2

NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZJC x RJC + TC


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U8780N-ChannelPowe

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MOSFET

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or(b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx

ActiveArray

Bottomless

Build it Now

CoolFETCROSSVOLT

DOME

EcoSPARK

E2CMOS

EnSigna

FACT

FACT Quiet Series

FAST

FASTr

FPS

FRFET

GlobalOptoisolatorGTO

HiSeC

I2C

i-Lo

ImpliedDisconnect

IntelliMAX

ISOPLANAR

LittleFET

MICROCOUPLER

MicroFET

MicroPakMICROWIRE

MSX

MSXPro

OCX

OCXPro

OPTOLOGIC

OPTOPLANAR

PACMAN

POP

Power247

PowerEdge

PowerSaver

PowerTrench

QFET

QS

QT OptoelectronicsQuiet Series

RapidConfigure

RapidConnect

SerDes

ScalarPump

SILENT SWITCHER

SMART START

SPM

Stealth

SuperFET

SuperSOT-3

SuperSOT-6

SuperSOT-8

SyncFET

TCM

TinyLogicTINYOPTO

TruTranslation

UHC

UltraFET

UniFET

VCX

Wire

Across the board. Around the world.

The Power Franchise

Programmable Active Droop

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I18

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