siemens nx esc introduction · cfd-ace + plasma combines plasma chemistry and transport of electro...
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報告人 :SHEAF 技術團隊 聯繫方式 : Email: [email protected] Phone: 02-29283088
化學工業製程分析 CFD-ACE+ features the possibility to model all aspects of flow, heat transfer (all modes), chemistry (gas phase and surface) and electro-physics essential to an optimized CVD Reactor design
•Model most CVD reactors
•Simulate transport of multicomponent species with associated gas/surface reactions
•Predicts the reactor’s thermal environment with advanced mode of radiation, thin films etc.
•Simulate showerheads, porous wall boundary conditions and external radiation sources
•Interface with feature evolution model
化學沈積
多物理化學耦合
電鍍應用
電漿模組 3D Cartesian
2D Cartesian or Cylindrical
1D Positive column
0D Well stirred Global
Plasma Model
Chemistry
Heat Magnetic
Plasma
User Subroutine
Electric Magnetic Turbulence
Flow Heat Radiation
Electric
Flow
Kinetic
Global PC CCP ICP
Reaction Manager
Arrh. Rate Cross-Sections
Maxw EEDF Non-Maxw EEDF
Non - Equilibrium Local Thermodynamic Equilibrium (LTE)
Dashed lines indicate an optional or alternative choice
電漿製程
Can model various types of semiconductor plasmas like ICP, CCP Reactors.
Simulate flow effects via tight coupling of gas flow and plasma transport
Calculate heat transfer and thermal balance of the entire plasma reactor
Can calculate deformation and stresses of the wafer and chamber with integration with FEMStress
Simulate electromagnetic power deposition, RF/DC bias, and plasma enhanced reactions
Interface with feature evolution module
CFD-ACE+ Plasma combines plasma chemistry and transport of electro-physics in an easy to use, integrated environment for a wide range of semiconductor applications, from low pressure non-equilibrium to thermal atmospheric plasmas, all with 3D capability
電漿製程結果預測
電漿電鍍
— 2374 sccm (Uin = 1 m/s) Argon
— P = 500 mTorr, Tgas = 300 K, gap = 2 cm
— RF source = 100V, 13.56 MHz
— Other boundaries (except dielectric) grounded
— 4-step surface chemistry
Electrode/Source voltage relation across capacitor
Idt
VVdC sf
B =− )(
RF Power electrode Showerhead Dielectric
Wafer
Vsrc
CB
I Vf
工業電鍍 利用CFD ACE電鍍模組,通過電化學反應將金屬離子沉積到物體上
保護物體不受磨損和腐蝕(航太及汽車工業) 裝飾塗層和粉末塗層 印刷電路板(半導體工業)
鑲嵌鍍層反應 • 鑲嵌(Damascence)和雙層鑲嵌(Dual Damascence)過程來代替傳統佈置金屬線和晶片的互連方式